EP0377445A3 - Method and device for generating ion beams with a large beam cross-section - Google Patents
Method and device for generating ion beams with a large beam cross-section Download PDFInfo
- Publication number
- EP0377445A3 EP0377445A3 EP19900100045 EP90100045A EP0377445A3 EP 0377445 A3 EP0377445 A3 EP 0377445A3 EP 19900100045 EP19900100045 EP 19900100045 EP 90100045 A EP90100045 A EP 90100045A EP 0377445 A3 EP0377445 A3 EP 0377445A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- ions
- grid
- ion beam
- help
- ion beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 3
- 150000002500 ions Chemical class 0.000 abstract 4
- 230000001133 acceleration Effects 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 230000002452 interceptive effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/10—Duoplasmatrons ; Duopigatrons
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Beschrieben wird ein Verfahren und eine Vorrichtung zur Erzeugung von Ionenstrahlen mit großflächigem Strahlquer schnitt. Ein Ionenstrahl, der zur Trockenätzung bei der Herstellung mikroelektronischer Bauelemente verwendet wird, muß eine hohe Strahlqualität aufweisen (kleine Divergenz, wenig Verunreinigungen, hohe Stromdichte). A method and an apparatus for Generation of ion beams with a large beam cross cut. An ion beam that is used for dry etching in the Production of microelectronic components is used, must have a high beam quality (small divergence, little contamination, high current density).
Bei bekannten großflächigen Ionenstrahlquellen werden die Ionen mit Hilfe von Gittern aus dem Plasma extrahiert. Die Verwendung des Gitters wirkt sich wegen des Feldverlaufes an den Gitterpunkten störend auf die Strahlqualität aus. With known large-area ion beam sources, the Ions extracted from the plasma with the help of lattices. The Use of the grid affects the course of the field interfering with the beam quality at the grid points.
Das erfindungsgemäße Verfahren kommt völlig ohne Gitter aus, die Ionen werden mit Hilfe von Metallzylindern (5) be schleunigt. Dabei gewährleistet eine gepulste Erzeugung der Ionen und eine gepulste Beschleunigung, daß die Ionen nur dann durch Felder beschleunigt werden, wenn sie sich in Bereichen bewegen, in denen ein nahezu homogenes Feld herrscht. Durch die damit erreichte hohe Strahlqualität eignet sich der Ionenstrahl zur Herstellung kleinster Strukturen im Sub-µ-Bereich. The method according to the invention comes completely without a grid off, the ions are with the help of metal cylinders (5) accelerates. This ensures a pulsed generation of Ions and a pulsed acceleration that the ions only then accelerated through fields when they are in Move areas in which an almost homogeneous field prevails. Due to the high beam quality achieved the ion beam is suitable for producing the smallest Structures in the sub-µ range.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3900252 | 1989-01-05 | ||
DE3900252A DE3900252C1 (en) | 1989-01-05 | 1989-01-05 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0377445A2 EP0377445A2 (en) | 1990-07-11 |
EP0377445A3 true EP0377445A3 (en) | 1991-07-03 |
EP0377445B1 EP0377445B1 (en) | 1994-05-11 |
Family
ID=6371639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP90100045A Expired - Lifetime EP0377445B1 (en) | 1989-01-05 | 1990-01-02 | Method and device for generating ion beams with a large beam cross-section |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0377445B1 (en) |
DE (2) | DE3900252C1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2764707A (en) * | 1955-07-22 | 1956-09-25 | Richard B Crawford | Ion source |
DE2942386A1 (en) * | 1979-10-19 | 1981-04-30 | Ulrich Dr. 8000 München Boesl | ION SOURCE |
US4737688A (en) * | 1986-07-22 | 1988-04-12 | Applied Electron Corporation | Wide area source of multiply ionized atomic or molecular species |
WO1988007259A1 (en) * | 1987-03-18 | 1988-09-22 | Hans Oechsner | High-frequency ion source |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3005931A (en) * | 1960-03-29 | 1961-10-24 | Raphael A Dandl | Ion gun |
-
1989
- 1989-01-05 DE DE3900252A patent/DE3900252C1/de not_active Expired - Fee Related
-
1990
- 1990-01-02 DE DE59005653T patent/DE59005653D1/en not_active Expired - Fee Related
- 1990-01-02 EP EP90100045A patent/EP0377445B1/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2764707A (en) * | 1955-07-22 | 1956-09-25 | Richard B Crawford | Ion source |
DE2942386A1 (en) * | 1979-10-19 | 1981-04-30 | Ulrich Dr. 8000 München Boesl | ION SOURCE |
US4737688A (en) * | 1986-07-22 | 1988-04-12 | Applied Electron Corporation | Wide area source of multiply ionized atomic or molecular species |
WO1988007259A1 (en) * | 1987-03-18 | 1988-09-22 | Hans Oechsner | High-frequency ion source |
Non-Patent Citations (1)
Title |
---|
IBM TECHNICAL DISCLOSURE BULLETIN. vol. 17, no. 5, Oktober 1974, NEW YORK US Seite 1379 W.C. KO, R.WINNARD: "HOLLOW CATHODE DISCHARGE ION SOURCE" * |
Also Published As
Publication number | Publication date |
---|---|
DE3900252C1 (en) | 1990-05-23 |
EP0377445A2 (en) | 1990-07-11 |
DE59005653D1 (en) | 1994-06-16 |
EP0377445B1 (en) | 1994-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60138526D1 (en) | METHOD AND DEVICE FOR GENERATING 18F-FLUORIDE | |
DE68905286D1 (en) | METHOD AND DEVICE FOR PRODUCING OR MODIFYING CUTTING EDGES. | |
DE69018018D1 (en) | Method and device for generating an elliptically distributed ion beam. | |
TW428204B (en) | Acceleration and analysis architecture for ion implanter | |
DE3750928T2 (en) | Runtime mass spectrometry. | |
ATE358878T1 (en) | DEVICE FOR GENERATING AND SELECTING IONS USED IN A HEAVY ION CANCER THERAPY SYSTEM | |
EP0002726A2 (en) | Process and apparatus for reactive ion etching | |
ATE227884T1 (en) | ION BEAM SCANNING METHOD AND APPARATUS | |
DE102005047081A1 (en) | Process for plasma-free etching of silicon with etching gas useful in production of deep structures such as through holes or troughs where silicon has one or more regions to be etched as layer on substrate or on substrate itself | |
DE69030987D1 (en) | Method and device for controlling ion movement through a membrane | |
DE3502902A1 (en) | ION RAY VAPOR DEVICE | |
DE69112166T2 (en) | Plasma source device for ion implantation. | |
DE2335821A1 (en) | PARTICLE ACCELERATOR | |
CA2380989A1 (en) | Atomic beam generating method and apparatus | |
DE3424449A1 (en) | SOURCE FOR NEGATIVE IONS | |
DE3688860T2 (en) | Ion beam source excited by electron beam. | |
EP0377445A3 (en) | Method and device for generating ion beams with a large beam cross-section | |
EP0390004A3 (en) | Method and device for the microwave-plasma etching | |
DE102018128326A1 (en) | Procedure for editing reeds | |
DE2244891A1 (en) | DEVICE FOR GENERATING ELECTRICAL ENERGY | |
KR950004655A (en) | Processing method using high speed atomic beam | |
DE1920183C3 (en) | Method for resolving an electrically insulating material with ions for atomization, doping or analysis of the material | |
CH625622A5 (en) | ||
DE69122526T2 (en) | Ion beam control system | |
DE69200643D1 (en) | Method and device for regulating the transverse magnetic field in an undulator for generating light energy from an electron beam. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB IT NL |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): DE FR GB IT NL |
|
17P | Request for examination filed |
Effective date: 19910806 |
|
17Q | First examination report despatched |
Effective date: 19930823 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): DE FR GB IT NL |
|
REF | Corresponds to: |
Ref document number: 59005653 Country of ref document: DE Date of ref document: 19940616 |
|
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) |
Effective date: 19940525 |
|
ITF | It: translation for a ep patent filed | ||
ET | Fr: translation filed | ||
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed | ||
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 19961218 Year of fee payment: 8 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 19970121 Year of fee payment: 8 Ref country code: DE Payment date: 19970121 Year of fee payment: 8 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 19970124 Year of fee payment: 8 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19980102 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: THE PATENT HAS BEEN ANNULLED BY A DECISION OF A NATIONAL AUTHORITY Effective date: 19980131 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19980801 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 19980102 |
|
NLV4 | Nl: lapsed or anulled due to non-payment of the annual fee |
Effective date: 19980801 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19981001 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED. Effective date: 20050102 |