EP0377445A3 - Method and device for generating ion beams with a large beam cross-section - Google Patents

Method and device for generating ion beams with a large beam cross-section Download PDF

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Publication number
EP0377445A3
EP0377445A3 EP19900100045 EP90100045A EP0377445A3 EP 0377445 A3 EP0377445 A3 EP 0377445A3 EP 19900100045 EP19900100045 EP 19900100045 EP 90100045 A EP90100045 A EP 90100045A EP 0377445 A3 EP0377445 A3 EP 0377445A3
Authority
EP
European Patent Office
Prior art keywords
ions
grid
ion beam
help
ion beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19900100045
Other languages
German (de)
French (fr)
Other versions
EP0377445A2 (en
EP0377445B1 (en
Inventor
Joachim Dr. Janes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of EP0377445A2 publication Critical patent/EP0377445A2/en
Publication of EP0377445A3 publication Critical patent/EP0377445A3/en
Application granted granted Critical
Publication of EP0377445B1 publication Critical patent/EP0377445B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/08Ion sources; Ion guns using arc discharge
    • H01J27/10Duoplasmatrons ; Duopigatrons

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Beschrieben wird ein Verfahren und eine Vorrichtung zur Erzeugung von Ionenstrahlen mit großflächigem Strahlquer­ schnitt. Ein Ionenstrahl, der zur Trockenätzung bei der Herstellung mikroelektronischer Bauelemente verwendet wird, muß eine hohe Strahlqualität aufweisen (kleine Divergenz, wenig Verunreinigungen, hohe Stromdichte). A method and an apparatus for Generation of ion beams with a large beam cross cut. An ion beam that is used for dry etching in the Production of microelectronic components is used, must have a high beam quality (small divergence, little contamination, high current density).

Bei bekannten großflächigen Ionenstrahlquellen werden die Ionen mit Hilfe von Gittern aus dem Plasma extrahiert. Die Verwendung des Gitters wirkt sich wegen des Feldverlaufes an den Gitterpunkten störend auf die Strahlqualität aus. With known large-area ion beam sources, the Ions extracted from the plasma with the help of lattices. The Use of the grid affects the course of the field interfering with the beam quality at the grid points.

Das erfindungsgemäße Verfahren kommt völlig ohne Gitter aus, die Ionen werden mit Hilfe von Metallzylindern (5) be­ schleunigt. Dabei gewährleistet eine gepulste Erzeugung der Ionen und eine gepulste Beschleunigung, daß die Ionen nur dann durch Felder beschleunigt werden, wenn sie sich in Bereichen bewegen, in denen ein nahezu homogenes Feld herrscht. Durch die damit erreichte hohe Strahlqualität eignet sich der Ionenstrahl zur Herstellung kleinster Strukturen im Sub-µ-Bereich. The method according to the invention comes completely without a grid off, the ions are with the help of metal cylinders (5) accelerates. This ensures a pulsed generation of Ions and a pulsed acceleration that the ions only then accelerated through fields when they are in Move areas in which an almost homogeneous field prevails. Due to the high beam quality achieved the ion beam is suitable for producing the smallest Structures in the sub-µ range.

EP90100045A 1989-01-05 1990-01-02 Method and device for generating ion beams with a large beam cross-section Expired - Lifetime EP0377445B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3900252 1989-01-05
DE3900252A DE3900252C1 (en) 1989-01-05 1989-01-05

Publications (3)

Publication Number Publication Date
EP0377445A2 EP0377445A2 (en) 1990-07-11
EP0377445A3 true EP0377445A3 (en) 1991-07-03
EP0377445B1 EP0377445B1 (en) 1994-05-11

Family

ID=6371639

Family Applications (1)

Application Number Title Priority Date Filing Date
EP90100045A Expired - Lifetime EP0377445B1 (en) 1989-01-05 1990-01-02 Method and device for generating ion beams with a large beam cross-section

Country Status (2)

Country Link
EP (1) EP0377445B1 (en)
DE (2) DE3900252C1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2764707A (en) * 1955-07-22 1956-09-25 Richard B Crawford Ion source
DE2942386A1 (en) * 1979-10-19 1981-04-30 Ulrich Dr. 8000 München Boesl ION SOURCE
US4737688A (en) * 1986-07-22 1988-04-12 Applied Electron Corporation Wide area source of multiply ionized atomic or molecular species
WO1988007259A1 (en) * 1987-03-18 1988-09-22 Hans Oechsner High-frequency ion source

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3005931A (en) * 1960-03-29 1961-10-24 Raphael A Dandl Ion gun

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2764707A (en) * 1955-07-22 1956-09-25 Richard B Crawford Ion source
DE2942386A1 (en) * 1979-10-19 1981-04-30 Ulrich Dr. 8000 München Boesl ION SOURCE
US4737688A (en) * 1986-07-22 1988-04-12 Applied Electron Corporation Wide area source of multiply ionized atomic or molecular species
WO1988007259A1 (en) * 1987-03-18 1988-09-22 Hans Oechsner High-frequency ion source

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN. vol. 17, no. 5, Oktober 1974, NEW YORK US Seite 1379 W.C. KO, R.WINNARD: "HOLLOW CATHODE DISCHARGE ION SOURCE" *

Also Published As

Publication number Publication date
DE3900252C1 (en) 1990-05-23
EP0377445A2 (en) 1990-07-11
DE59005653D1 (en) 1994-06-16
EP0377445B1 (en) 1994-05-11

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