EP0376825A1 - Feldemissionselektronenquelle - Google Patents

Feldemissionselektronenquelle Download PDF

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Publication number
EP0376825A1
EP0376825A1 EP89403624A EP89403624A EP0376825A1 EP 0376825 A1 EP0376825 A1 EP 0376825A1 EP 89403624 A EP89403624 A EP 89403624A EP 89403624 A EP89403624 A EP 89403624A EP 0376825 A1 EP0376825 A1 EP 0376825A1
Authority
EP
European Patent Office
Prior art keywords
electrode
electron source
potential
emissive
source according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP89403624A
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English (en)
French (fr)
Inventor
Bernard Epsztein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales Electron Devices SA
Original Assignee
Thomson Tubes Electroniques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Tubes Electroniques filed Critical Thomson Tubes Electroniques
Publication of EP0376825A1 publication Critical patent/EP0376825A1/de
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Definitions

  • the present invention relates to an electron source operating on the principle of field emission. Its object is to perfect such sources, particularly when they are produced by processes which are part of integrated circuit technology or of the field of film deposition in thin layers on a substrate, such as for example for the manufacture of MOS transistors.
  • the techniques already used for integrated circuits or in the field of thin-film films have made it possible to make significant progress in the manufacture of field emission electron sources.
  • These techniques make it possible in particular to obtain structures of very small dimensions which each implement a tip with a very small radius of curvature: the tip is made emissive under the influence of an electric field created using an electrode brought to a positive potential compared to the tip potential.
  • the structure comprising a point constitutes an elementary electron emitting device, capable of forming a microtube, of the triode type for example, or even an electron microchannel, and this elementary device can be used alone or combined with other such devices.
  • FIG. 1 schematically illustrates by way of example an elementary emitter device for field emission electrons, of known type.
  • the transmitter device 1 is formed on a substrate 2, partially shown but whose dimensions can allow the production of a plurality of transmitter devices 1 arranged side by side in a matrix arrangement for example.
  • the substrate 2 is made of a semiconductor material, for example silicon, but it could also be made of a conductive layer, aluminum for example.
  • the substrate 2 is dug so as to comprise a well 3 in the center of which there remains a protuberance 4, of conical shape; the well 3 is centered around an axis 5 intended to constitute the axis of an electron beam 6.
  • the protuberance or cone 4 is made of the same material as the substrate 2, its base is integral with the bottom of the well 3, its apex or point 7 being oriented towards the outside of the well 3 and located on the longitudinal axis 5.
  • the cone 2 could be metallic, as explained in the documents herein above, and that it could also be added to the substrate 2.
  • the insulating layer 9 carries a layer 11 of an electrically conductive material and which has an opening facing the well 3, so as to surround the latter.
  • the layer 11 thus constitutes, around the longitudinal axis 5, an annular electrode, intended for example to constitute an electrode whose function is that which is fulfilled by a Wehnelt electrode as used in particular in the electron guns of cathode ray tubes.
  • wehnelt electrode 11 Above the Wehnelt electrode 11 is deposited an electrically insulating layer 12, open facing the well 3, and which separates the Wehnelt electrode 11 from a second electrically conductive layer 13; this second electrically conductive layer 13 is also open facing the well 3 so as to form a second annular electrode 13 centered around the longitudinal axis 5.
  • the second electrode 13 is brought to a positive potential, of 100 volts for example, relative to a reference potential applied to the substrate 2, the Wehnelt electrode 11 being for example to a potential close to or equal to that of the substrate 2.
  • the tip 7 emits electrons under the influence of the electric field created by the potential of the second electrode 13 which thus constitutes an extracting electrode.
  • the electrons emitted by the tip 7 form an electron beam 6, which could possibly be further accelerated by means of additional electrodes; but also the electrode 13 could be replaced by an anode without opening for the passage of the beam, as described in French patent application No. 2, 568.394 already cited.
  • the dimensions of the structure of the emitting device 1 are of the order of a few micrometers: for example two or three micrometers for the diameter D of the well 3; of the order of one micrometer for the height H of the cone 4; and of the order of 0.06 micrometer for the radius of curvature (not shown) of the tip 7 which constitutes the emissive tip.
  • an electronic current whose average intensity can be of the order of 25 microamps, and which can even reach and exceed, at peak, 100 microamps.
  • each elementary emitting device as the barrel of a microtube, and to associate and combine a large number of them to form the equivalent of an integrated circuit, the semiconductor components thus being replaced by vacuum microtubes.
  • Such sources offer many advantages. Compared to cathodes and guns conventionally used, and in microwave tubes in particular, they have the following advantages in particular: - absence of heating and instantaneous operation; - possibility of modulating the current with a low modulation voltage and at low impedance, hence the possibility of very wide band operation; - overall current density much higher than what we know currently obtain by traditional means (currently it is at most of the order of 10 amperes / cm2).
  • the advantages over semiconductor components are: - possibility of much higher power per element; - absence of losses within the material; - significantly higher microwave performance; - insensitivity to ionizing radiation; - far superior immunity to electromagnetic impulses; - possible applications for visualization.
  • this technique can be exploited, since it has the following disadvantages in particular: - strong variation in emission from one emissive point to another, depending on the radius of curvature which is in practice not controllable; - non-linearity of the modulation characteristic; - significant random variation in time of the current emitted by a tip, due to the temporary presence on the tip of residual gas molecules which modify the output work. It may even happen that the output work is reduced to the point that the intensity of the current emitted by the tip is sufficient to melt the latter by the Joule effect. On the other hand, the random variation of the current results in considerable noise; - the electrons emitted by the point constitute a beam with strong divergence practically non-refocusable.
  • the present invention relates to an electron source formed by at least one elementary emitting device with field emission of a type similar to those described above, that is to say which can constitute a vacuum microtube, or a microcanon capable of being applied to the display of an elementary image point or even for example a microcanon associated with a large number of similar devices mounted in parallel in order to produce a macroscopic cathode.
  • the object of the invention is to improve the elementary electron emitting device so as to avoid the above-mentioned drawbacks, while retaining a high electronic emission capacity, and retaining to these elementary emitting devices the possibility of being produced by the techniques used in the field of integrated circuits or in that of thin-film films.
  • an electron source producing electrons intended to constitute at least one electron beam comprising at least one elementary electron emitting device of the field emission type, the emitting device comprising an electron emitting tip brought to a reference potential, an extractor electrode brought to a positive potential with respect to the reference potential, the extractor electrode comprising a hole for the passage of electrons emitted by the emissive point, is characterized in that the emitting device further comprises at least one control electrode provided with a hole for the passage of electrons, the control electrode being arranged downstream of the extracting electrode relative to the direction of propagation of the beam , the control electrode being at a negative potential with respect to the extraction electrode, and in that means for accelerating the beam are arranged downstream of the control electrode.
  • the control electrode By the presence of the control electrode and its arrangement, owing to the fact that it is located downstream of the extracting electrode, the control electrode has no action on the emission of electrons from the tip. emissive, but on the other hand it slows down the electrons which have passed the level of the extraction electrode, and also tends to act like an electrostatic lens by making the electrons converge towards the axis of the beam, and it also tends to reflect towards the 'extracting electrode the electrons which have high transverse velocities; these actions of the control electrode being more or less pronounced, in particular as a function of the value of the potential which is applied to it.
  • FIG. 2 is a schematic sectional view of an electron source 20 which may include one or a plurality of elementary electron emitting devices according to the invention; but, in the nonlimiting example described, only two transmitting devices 31, 31b are shown for the sake of clarity in FIG. 2.
  • the transmitting devices 31, 31b are formed from 'a substrate 32 in a semiconductor material, in silicon for example. These two transmitting devices are identical, also, to simplify the description, only the first transmitting device 31 is described.
  • the substrate 32 is dug so as to constitute a hole or well 22, centered on a longitudinal axis X1, intended to constitute the axis of an elementary beam F1 of electrons.
  • the well 22 is dug so as to retain, in the center and at the bottom of the latter, a conical protuberance 33 whose apex or point 34 is oriented towards the outside of the well and is located on the longitudinal axis X1 .
  • a layer 36 of an electrically insulating material is deposited on the surface 35 of the substrate 32.
  • the insulating layer 36 in turn carries a layer 37 of an electrically conductive material.
  • These layers 36, 37 are open opposite the well 22 according to the same diameter D as the latter, so that the electrically conductive layer 37 forms an annular electrode 27 centered around the longitudinal axis X1 or beam axis elementary, this electrode being intended to constitute an extracting electrode 27.
  • the electrons emitted by the emissive tip 34 are intended to form the elementary beam F1, the direction of propagation of the beam F1 being symbolized in the figure by an arrow 41.
  • the elementary transmitter device 31 of the invention shown in FIG. 2 does not include wehnelt electrodes, because, both in the device of the prior art and in that of the invention, such an electrode is not essential for operation, since: particularly in the prior art, the modulation of the electron beam can be accomplished by modulating the potential applied to the extracting electrode; in the elementary emitting device 31 of the invention, the modulation of the elementary beam F1 is obtained in a new and particularly advantageous manner, using the control electrode 29 disposed downstream of the retrieving electrode 27 with respect to in the direction of propagation 41 of the elementary beam.
  • a wehnelt electrode of the type shown in FIG. 1 could also be mounted in the emitter device 31 of the invention where it would be placed upstream of the extractor electrode 27 and brought to a potential close to the reference potential VR.
  • the distribution of potential or potential map between these elements determines a strong divergence of a primary beam 45 formed, between the emissive tip 34 and the extracting electrode 27, by the electrons emitted by the emissive tip 34: the presence of large transverse velocities is noted for a high proportion of the electrons emitted by this tip; this strong divergence from the emissive tip 34 is symbolized in FIG. 4 by a number n of trajectories L1, L2, ..., Ln of electrons, the number n of the trajectories represented being small for clarity of the figure .
  • the extracting electrode 27 is followed, in the direction of propagation of the beam, by the control electrode 29 which is brought to a negative control potential V2 relative to the potential V1 of the grid extractor 27.
  • the control electrode 29 For the electrons (symbolized by the paths L1 to Ln) emitted by the emissive tip 34, the influence of the control grid 29 is exerted particularly from the moment when these electrons reach the level of the extractor electrode 27.
  • the control electrode 29 being negative with respect to the extractor electrode 27, it slows down these electrons which constitute the primary beam 45.
  • the primary beam 45 by its presence, digs the potential map and, depending of the control potential V2 applied to the control electrode 29, it is partially reflected, as illustrated in FIG. 4 by paths L4, L5 which join the extractor electrode 27 and which show that the latter can capture electrons thus reflected.
  • a virtual cathode 46 symbolized by a cloud of points which only can pass through, to constitute the elementary electron beam F1, the electrons which deviate little from the longitudinal axis X1 either by a divergence, or by a convergence, too pronounced, or in other words a virtual cathode 46 that only electrons with sufficient longitudinal energy can pass, that is to say say whose transverse speed is low.
  • the virtual cathode 46 constitutes a reserve of electrons or an electron plasma, from which it follows that the intensity of the elementary electron beam F1 or useful beam is practically independent of the primary source represented by the emissive tip 34, and independent of the fluctuations in electron flow from this primary source 34; the intensity of the elementary beam or useful beam F1 only depends on the geometry of the virtual cathode 46 which is controlled by the potential V2 applied to the control electrode 29. A positive variation in the potential V2 applied to the control electrode 29 leads to increasing the intensity of the elementary electron beam F1 or useful beam, and even to causing the disappearance of the virtual cathode 46. It is therefore necessary, for the best functioning, that the average intensity of the primary beam 45 emitted by the emissive tip 34 has a value substantially equal to or greater than the average intensity of the useful beam F1 emitted by the virtual cathode 46.
  • the diameter D of the well 22 is of the order of 2 micrometers; the height H of the cone 33 is of the order of 1 micrometer; the radius of curvature (not shown) of the apex or emissive point 34 is of the order of 0.06 micrometer; the distance d1 between the bottom 50 of the well 32 and the extracting electrode 27 is of the order of 2 micrometers; the distance d2 between the base 50 and the control electrode 29 is of the order of 3 to 4 micrometers; the electrically conductive layers from which the electrodes 27, 29 are made have a thickness (not identified) of the order of 1 micrometer; on the other hand under these conditions, the substrate 32 being silicon, the reference
  • the control potential V2 applied to the control electrode 29 can be variable, so as in particular to modulate the useful beam F1.
  • a negative potential of a few volts applied to the electrode 29 is sufficient to block the useful beam F1.
  • the electrons which constitute the elementary beam or useful beam F1 can be re-accelerated by means of an auxiliary anode or an accelerating electrode, or a cathodoluminescent anode , or some other means of acceleration in itself conventional, already contained in the device (not shown) in which the source 20 can constitute a cathode, in a microwave tube (not shown) for example.
  • the elementary emitting device 31 can be of the triode type, that is to say that its structure can be limited to the emitting tip 34, the extracting electrode 27 and the control electrode 29, the upper part voltage of the microwave tube used to accelerate the beam.
  • auxiliary anode 60 disposed downstream of the control electrode 29.
  • the auxiliary anode 60 can be produced from an electrically conductive layer 59 which is separated from the control electrode 29 by an insulating layer 61, these two layers 59, 61 being etched so as to be open facing the well 22 and allowing the useful beam F1 to pass .
  • the cone 33 used to form the emissive tip 34 is formed from the substrate 32, made of silicon in the example, but in the spirit of the invention the substrate 32 could be another type, and furthermore the cone 33 could be made of a material different from that forming the substrate 32, an electrically conductive material such as, for example, tungsten, or molybdenum (as taught in the documents cited above), which would be attached to the bottom 50 of the well 22 and engraved to constitute the emissive point 34.
  • FIG. 2 shows that the resistor R1 is connected by one of these ends to the conductive layer 37 which serves to constitute the extracting electrode 27, and by the other end to the positive pole + a voltage generator G1 delivering the extraction voltage V1, the other pole of this generator being connected to the substrate 32 and forming the reference voltage VR.
  • the control electrode 29 is connected to the reference voltage VR via a modulation device M, to which a modulation signal SM can be applied, and which makes it possible to adjust the second control potential V2 applied to the control electrode 29; the modulation signal SM possibly being superimposed on the control potential V2.
  • a second voltage generator G2 delivers by a positive output + the third potential V3, of + 100 V for example, which is applied to the accelerating anode 60, the negative output - of this second generator G2 being connected to the reference voltage VR, that is to say to the substrate 32.
  • the elementary emitting device 31 is preferably produced (but not necessarily) by a technology specific to integrated circuits and to the field of films in thin layers, that is to say by using a substrate and successive deposits of insulating and conductive layers, and using etching techniques common in integrated circuit technology and films in thin layers. Consequently, the same substrate 32 can carry a large number (1 million for example) of elementary electron devices such as device 31, on a small surface.
  • the elementary emitting devices mounted on the same substrate can be linked together to form a complex circuit, in the same way as in the case of an integrated circuit. It is also possible, for example, to combine these elementary emitting devices by mounting them in parallel, so as to obtain the equivalent of a macroscopic cathode whose current, at peak, could reach 100 amps or more.
  • all the emissive tips 34 can be at the same reference potential VR; all the extracting electrodes 27 can be produced from the same electrically conductive layer 37 and are therefore interconnected, as may optionally be all the control grids 29 and all the accelerating anodes 60.
  • FIG. 2 wherein the substrate 32 carries the first and second elementary emitting devices 31, 31b.
  • These two transmitting devices 31, 31b belong for example to the same line which could include 1000 such transmitting devices; and a distance d4 of the order of a few micrometers to a hundred micrometers for example, between the longitudinal axis X1 of each of these emitting devices 31, 31b, can represent the pitch between two successive columns of such emitting devices, columns which extend in a plane perpendicular to that of the figure.

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  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
EP89403624A 1988-12-30 1989-12-22 Feldemissionselektronenquelle Ceased EP0376825A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8817484 1988-12-30
FR8817484A FR2641412B1 (fr) 1988-12-30 1988-12-30 Source d'electrons du type a emission de champ

Publications (1)

Publication Number Publication Date
EP0376825A1 true EP0376825A1 (de) 1990-07-04

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EP89403624A Ceased EP0376825A1 (de) 1988-12-30 1989-12-22 Feldemissionselektronenquelle

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US (1) US5070282A (de)
EP (1) EP0376825A1 (de)
JP (1) JPH02226635A (de)
FR (1) FR2641412B1 (de)

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EP0513777A3 (en) * 1991-05-13 1993-10-20 Seiko Epson Corp Multiple electrode field electron emission device and process for manufacturing it
US5386172A (en) * 1991-05-13 1995-01-31 Seiko Epson Corporation Multiple electrode field electron emission device and method of manufacture
EP0513777A2 (de) * 1991-05-13 1992-11-19 Seiko Epson Corporation Mehrfachelektrodenvorrichtung mit feldemittierenden Elektronen und Verfahren zu dessen Herstellung
EP0544516A1 (de) * 1991-11-25 1993-06-02 Motorola, Inc. Elektrostatische Elektronenstrahl-Fokussierungseinrichtung für eine Feldemissionsvorrichtung
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EP0596242A1 (de) * 1992-11-02 1994-05-11 Motorola, Inc. Helligkeitsmodulierte Kaltkathodeanzeigevorrichtung
US5747918A (en) * 1994-03-30 1998-05-05 Lucent Technologies Inc. Display apparatus comprising diamond field emitters
FR2735900A1 (fr) * 1995-05-30 1996-12-27 Mitsubishi Electric Corp Source d'electrons du type a emission de champ et procede pour la fabriquer
US5763987A (en) * 1995-05-30 1998-06-09 Mitsubishi Denki Kabushiki Kaisha Field emission type electron source and method of making same
FR2737041A1 (fr) * 1995-07-07 1997-01-24 Nec Corp Canon a electrons pourvu d'une cathode froide a emission de champ
WO2001031672A1 (fr) * 1999-10-28 2001-05-03 Commissariat A L'energie Atomique Procede de commande de structure comportant une source d'electrons a effet de champ
FR2800510A1 (fr) * 1999-10-28 2001-05-04 Commissariat Energie Atomique Procede de commande de structure comportant une source d'electrons a effet de champ
US6462486B1 (en) 1999-10-28 2002-10-08 Commissariat A L'energie Atomique Method for controlling a structure comprising a source of field emitting electrons
FR2828956A1 (fr) * 2001-06-11 2003-02-28 Pixtech Sa Protection locale d'une grille d'ecran plat a micropointes

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FR2641412A1 (fr) 1990-07-06
FR2641412B1 (fr) 1991-02-15
US5070282A (en) 1991-12-03

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