EP0370478A3 - Thin film for a precision resistor - Google Patents

Thin film for a precision resistor Download PDF

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Publication number
EP0370478A3
EP0370478A3 EP19890121543 EP89121543A EP0370478A3 EP 0370478 A3 EP0370478 A3 EP 0370478A3 EP 19890121543 EP19890121543 EP 19890121543 EP 89121543 A EP89121543 A EP 89121543A EP 0370478 A3 EP0370478 A3 EP 0370478A3
Authority
EP
European Patent Office
Prior art keywords
substance
layers
proportions
hydrogen
precision
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP19890121543
Other languages
German (de)
French (fr)
Other versions
EP0370478A2 (en
Inventor
Volker Dr. Rer. Nat. Riede
Gerhard Dr. Rer. Nat. Sobe
Hartmut Dr. Rer. Nat. Schreiber
Günter Dr.-Ing. Weise
Armin Dr. Sc. Nat. Heinrich
Hartmut Dr. Rer. Nat. Vinzelberg
Winfried Dr. sc. nat. Brückner
Lutz Bierbrauer
Albrecht Müller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VEB ELEKTRONISCHE BAUELEMENTE CARL VON OSSIETZKY
Original Assignee
Microtech Electronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microtech Electronic GmbH filed Critical Microtech Electronic GmbH
Publication of EP0370478A2 publication Critical patent/EP0370478A2/en
Publication of EP0370478A3 publication Critical patent/EP0370478A3/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Die Erfindung bezieht sich auf das Gebiet der Elektronik/­ Mikroelektronik und betrifft Präzisions-Widerstands-Dünn­ schichten, wie sie z.B. in Hybridschaltkreisen, Sensoren oder integrierten Schaltungen Anwendung finden. The invention relates to the field of electronics / Microelectronics and concerns precision resistance thin layers such as in hybrid circuits, sensors or integrated circuits are used.

Die Aufgabe der Erfindung, die Zusammensetzung der Schichten und ihre Struktur bezüglich der Heterogenität zu verändern, wird durch Präzisions-Widerstands-Dünnschichten auf der Basis von CrSiO mit 10 bis 50 Stoffmengenanteilen Sauer­ stoff und einem Atomverhältnis Si:Cr zwischen 1 und 10 sowie mit einem oder mehreren hochschmelzenden Metallen (x) von 0 bis 10 Stoffmengenanteilen und 0 bis 50 Stoffmengen­ anteilen Al bezogen auf das Gesamtsystem CrSiXAl erfindungs­ gemäß dadurch gelöst, daß die Schicht zwischen 2 und 20 Stoffmengenanteile Wasserstoff, bezogen auf das Gesamt­ system CrSiCAlOH, enthält, daß ein Teil des Wasserstoffs in Form von OH-Gruppen abgebunden ist, und daß die Schicht eine Entmischung in O-reiche und O-arme Cluster aufweist, die mit einer Säulenstruktur gekoppelt ist. The object of the invention, the composition of the layers and change their structure in terms of heterogeneity, is made by precision resistance thin layers on the Basis of CrSiO with 10 to 50 substance proportions sour substance and an atomic ratio Si: Cr between 1 and 10 as well as with one or more refractory metals (x) from 0 to 10 substance proportions and 0 to 50 substance quantities Al share based on the overall system CrSiXAl invention accordingly solved in that the layer between 2 and 20 Substance proportions of hydrogen, based on the total system CrSiCAlOH, contains part of the hydrogen in Form of OH groups is set, and that the layer is a Has segregation into O-rich and O-poor clusters with is coupled to a column structure.

Durch die Erfindung ist es möglich, Widerstands-Dünnschich­ ten mit Präzisionseigenschaften anzugeben. The invention makes it possible to use thin resistive layers to specify with precision properties.

EP19890121543 1988-11-22 1989-11-21 Thin film for a precision resistor Ceased EP0370478A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DD322038 1988-11-22
DD32203888A DD283755A7 (en) 1988-11-22 1988-11-22 PRECISION RESISTANCE thin film

Publications (2)

Publication Number Publication Date
EP0370478A2 EP0370478A2 (en) 1990-05-30
EP0370478A3 true EP0370478A3 (en) 1991-05-08

Family

ID=5604132

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19890121543 Ceased EP0370478A3 (en) 1988-11-22 1989-11-21 Thin film for a precision resistor

Country Status (4)

Country Link
EP (1) EP0370478A3 (en)
DD (1) DD283755A7 (en)
DK (1) DK582989A (en)
FI (1) FI895533A0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221639A (en) * 1991-10-20 1993-06-22 Motorola, Inc. Method of fabricating resistive conductive patterns on aluminum nitride substrates
EP0736881B1 (en) * 1995-03-09 2000-05-24 Philips Patentverwaltung GmbH Electrical resistance device with CrSi resistance layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3498832A (en) * 1967-03-16 1970-03-03 Motorola Inc Material and method for producing cermet resistors
DD158725A3 (en) * 1980-02-21 1983-02-02 Joachim Sonntag PRECISION RESISTANCE LAYER
DD230106A1 (en) * 1984-12-20 1985-11-20 Akad Wissenschaften Ddr PRECISION RESISTANCE STRATEGY FOR THE MEDIUM AND HIGH RESOURCES

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3498832A (en) * 1967-03-16 1970-03-03 Motorola Inc Material and method for producing cermet resistors
DD158725A3 (en) * 1980-02-21 1983-02-02 Joachim Sonntag PRECISION RESISTANCE LAYER
DD230106A1 (en) * 1984-12-20 1985-11-20 Akad Wissenschaften Ddr PRECISION RESISTANCE STRATEGY FOR THE MEDIUM AND HIGH RESOURCES

Also Published As

Publication number Publication date
DD283755A7 (en) 1990-10-24
FI895533A0 (en) 1989-11-21
DK582989D0 (en) 1989-11-20
EP0370478A2 (en) 1990-05-30
DK582989A (en) 1990-05-23

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