EP0370478A2 - Thin film for a precision resistor - Google Patents

Thin film for a precision resistor Download PDF

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Publication number
EP0370478A2
EP0370478A2 EP19890121543 EP89121543A EP0370478A2 EP 0370478 A2 EP0370478 A2 EP 0370478A2 EP 19890121543 EP19890121543 EP 19890121543 EP 89121543 A EP89121543 A EP 89121543A EP 0370478 A2 EP0370478 A2 EP 0370478A2
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Prior art keywords
layer
per cent
hydrogen
mole per
parts
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EP19890121543
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German (de)
French (fr)
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EP0370478A3 (en
Inventor
Volker Dr. Rer. Nat. Riede
Gerhard Dr. Rer. Nat. Sobe
Hartmut Dr. Rer. Nat. Schreiber
Günter Dr.-Ing. Weise
Armin Dr. Sc. Nat. Heinrich
Hartmut Dr. Rer. Nat. Vinzelberg
Winfried Dr. sc. nat. Brückner
Lutz Bierbrauer
Albrecht Müller
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VEB ELEKTRONISCHE BAUELEMENTE CARL VON OSSIETZKY
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Microtech Electronic GmbH
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors

Definitions

  • the invention relates to the field of electronics / microelectronics and relates to precision resistance thin films, e.g. find application in hybrid circuits, sensors or integrated circuits.
  • Precision resistance thin films based on CrSiO with 0 to 60 molar proportions of oxygen are known (DE-OS 2 724 498). It is also known that such thin layers may additionally contain W, Ta or Mo with 1 to 10 parts by weight and / or Al with 5 to 70 parts by weight (DD 158 725, DD 230 106).
  • the invention has for its object to provide a precision resistance thin film, the TK and ⁇ TK at the same time have a value close to zero in a wide and as high a range of resistivity, changing the composition of the layers and their structure in terms of heterogeneity is.
  • the task is accomplished by a precision resistance thin layer based on CrSiO with 10 to 50 parts oxygen and an atomic ratio Si: Cr between 1 and 10 and with one or more refractory metals (x) from 0 to 10 parts and from 0 to 50 Amounts of substance Al, based on the CrSiXAl system, according to the invention solved in that the layer contains between 2 and 20 parts by weight of hydrogen, based on the overall CrSiXAlOH system, that part of the hydrogen is bonded in the form of OH groups, and that the layer separates in O-rich and O-poor clusters, which is coupled with a column structure.
  • the layer advantageously has the composition (Si a Cr b W c ) 1-x (O 1-y H y ) x , where the coefficients a are between 0.5 and 0.85, b between 0.15 and 0.5 and c between 0 and 0.05, and x values between 0.3 and 0.55 and y between 0.1 and assumes 0.15.
  • composition of the layer is also advantageous (Si a Cr b Al c ) 1-x (O 1-y H y ) x given, the coefficients a between 0.5 and 0.8, b between 0.15 and 0.5 and c between 0 and 0.2, and x values between 0.3 and 0.55 and y between 0 , 1 and 0.15.
  • Resistance layers of the specified composition and structure have the property according to the objective that TK and ⁇ TK are simultaneously near zero in a wide and higher range of the specific resistance.
  • the layers can be produced, for example, with a plasmatron.
  • the sputtering takes place in an atmosphere containing H2O with a total pressure between 1 and 100 Pa.
  • composition and structure of the layers can be checked as follows, for example:
  • the concentration of the elements Si, Cr, W and O can be determined by Rutherford backscattering spectroscopy, the H concentration by a nuclear physical analysis method according to the reaction 1H (15N, ⁇ ) 12C approx. 1 week after shift production. At this point in time, low volatile hydrogen components, which are neglected here and which are also difficult to track, are no longer present in the layers.
  • the OH groups can be detected using infrared spectroscopy; the samples then show absorption bands in the range from 3000 to 3600 cm -1.
  • the segregation and the column structure can be demonstrated by transmission electron microscopic examinations including the associated diffractions; the column structure becomes particularly clear when the samples are inclined to the electron beam.
  • a resistance layer of 80 nm thickness with a composition that passes through (Si0, 55Cr0, 43W0, 02) 1-x (O 1-y H y ) x given is.
  • Example 1 corresponds to the prior art.
  • the layers can be produced as follows:
  • An ultra-high vacuum-tight system of 100 l recipient volume is used, in which a plasmatron with a target of the composition 60 Si 38 Cr 2 W is installed.
  • the suction power of the pumps is reduced to 20 l / s.
  • the substrate movement is based on the known planetary principle.
  • the distance between target and substrate pallet is 80 mm, the working gas pressure (argon) 4 Pa; the condensation rate is set at 10 nm / min. Steam is used as the reactive gas, which is let in via a shower.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

The invention relates to the field of electronics/microelectronics and concerns thin films for precision resistors such as are used, for example, in hybrid circuits, sensors or integrated circuits. The object of the invention of changing the composition of the films and their structure with respect to the heterogeneity, is achieved, according to the invention, by CrSiO-based thin films for precision resistors with 10 to 50 mole per cent of oxygen and an Si:Cr atomic ratio of between 1 and 10 and with one or more high-melting metals (x) of 0 to 10 mole per cent and 0 to 50 mole per cent of Al based on the total CrSiXAl system, in that the film contains between 2 and 20 mole per cent of hydrogen based on the total CrSiCAlOH system, that some of the hydrogen is bonded in the form of OH groups and that the film exhibits a segregation into O-rich and O-poor clusters which is associated with a column structure. The invention makes it possible to specify resistor thin films having precision characteristics.

Description

Die Erfindung bezieht sich auf das Gebiet der Elektronik/­Mikroelektronik und betrifft Präzisions-Widerstands-Dünn­schichten, wie sie z.B. in Hybridschaltkreisen, Sensoren oder integrierten Schaltungen Anwendung finden.The invention relates to the field of electronics / microelectronics and relates to precision resistance thin films, e.g. find application in hybrid circuits, sensors or integrated circuits.

Bekannt sind Präzisions-Widerstands-Dünnschichten auf der Basis von CrSiO mit 0 bis 60 Stoffmengenanteilen Sauerstoff (DE-OS 2 724 498). Weiterhin ist bekannt, daß solche Dünn­schichten W, Ta oder Mo mit 1 bis 10 Stoffmengenanteilen und/oder Al mit 5 bis 70 Stoffmengenanteilen zusätzlich enthalten können (DD 158 725, DD 230 106).Precision resistance thin films based on CrSiO with 0 to 60 molar proportions of oxygen are known (DE-OS 2 724 498). It is also known that such thin layers may additionally contain W, Ta or Mo with 1 to 10 parts by weight and / or Al with 5 to 70 parts by weight (DD 158 725, DD 230 106).

Alle diese Werkstoffzusammensetzungen haben die Nachteile, daß Temperaturkoeffizienten um Null entweder nur in einem engen Temperaturgebiet oder nur in einem schmalen Bereich des spezifischen Widerstandes erreicht werden und daß dieser Bereich weiterhin im unteren Teil des mit diesen Schichten überstreichbaren Widerstandsgebietes liegt, d.h., daß der nutzbare Widerstandsbereich um so enger ist, je weiter der Temperaturbereich ist, für den ein kleiner TK gefordert wird. Dies ist oft von - 55oC bis 125oC bzw. 155oC der Fall. Es ist dann üblich, zur Charakterisierung des Tempe­raturkoeffizienten zwei Parameter zu verwenden, den TK zwischen 25oC und 125oC (sog. Wärme-TK) und die Paraboli­zität Δ TK (Unterschied des TK im Wärmebereich zu dem im Kältebereich, d.h. von - 55oC bis 25oC).All of these material compositions have the disadvantages that temperature coefficients around zero are achieved either only in a narrow temperature range or only in a narrow range of the specific resistance and that this range is still in the lower part of the resistance range which can be covered with these layers, that is to say that the usable resistance range The wider the temperature range for which a small TC is required, the narrower it is. This is often the case from - 55 o C to 125 o C or 155 o C. It is then common to use two parameters to characterize the temperature coefficient, the TK between 25 o C and 125 o C (so-called heat TK) and the parabolicity Δ TK (difference of TK in the heating area to that in the cooling area, ie from - 55 o C to 25 o C).

Der Erfindung liegt die Aufgabe zugrunde, eine Präzisions-­Widerstands-Dünnschicht anzugeben, deren TK und Δ TK gleich­zeitig einen Wert nahe Null in einem weiten und möglichst hohen Bereich des spezifischen Widerstandes haben, wobei die Zusammensetzung der Schichten und ihre Struktur bezüglich der Heterogenität zu verändern ist.The invention has for its object to provide a precision resistance thin film, the TK and Δ TK at the same time have a value close to zero in a wide and as high a range of resistivity, changing the composition of the layers and their structure in terms of heterogeneity is.

Die Aufgabe wird durch eine Präzisions-Widerstands-Dünnschicht auf der Basis CrSiO mit 10 bis 50 Stoffanteilen Sauerstoff und einem Atomverhältnis Si : Cr zwischen 1 und 10 und mit einem oder mehreren hochschmelzenden Metallen (x) von 0 bis 10 Stoffmengenanteilen und von 0 bis 50 Stoffmengenanteilen Al, bezogen auf das System CrSiXAl erfindungsgemäß dadurch gelöst, daß die Schicht zwischen 2 und 20 Stoffmengenanteile Wasserstoff, bezogen auf das Gesamtsystem CrSiXAlOH, enthält, daß ein Teil des Wasserstoffs in Form von OH-Gruppen abge­bunden ist, und daß die Schicht eine Entmischung in O-reiche und O-arme Cluster aufweist, die mit einer Säulenstruktur gekoppelt ist.The task is accomplished by a precision resistance thin layer based on CrSiO with 10 to 50 parts oxygen and an atomic ratio Si: Cr between 1 and 10 and with one or more refractory metals (x) from 0 to 10 parts and from 0 to 50 Amounts of substance Al, based on the CrSiXAl system, according to the invention solved in that the layer contains between 2 and 20 parts by weight of hydrogen, based on the overall CrSiXAlOH system, that part of the hydrogen is bonded in the form of OH groups, and that the layer separates in O-rich and O-poor clusters, which is coupled with a column structure.

Vorteilhafterweise hat die Schicht die Zusammensetzung
(SiaCrbWc)1-x (O1-yHy)x ,
wobei die Koeffizienten a zwischen 0,5 und 0,85, b zwischen 0,15 und 0,5 und c zwischen 0 und 0,05 liegen, sowie x-­Werte zwischen 0,3 und 0,55 und y zwischen 0,1 und 0,15 annimmt.The layer advantageously has the composition
(Si a Cr b W c ) 1-x (O 1-y H y ) x ,
where the coefficients a are between 0.5 and 0.85, b between 0.15 and 0.5 and c between 0 and 0.05, and x values between 0.3 and 0.55 and y between 0.1 and assumes 0.15.

Ebenfalls vorteilhaft ist die Zusammensetzung der Schicht durch
(SiaCrbAlc)1-x(O1-yHy)x
gegeben, wobei die Koeffizienten a zwischen 0,5 und 0,8, b zwischen 0,15 und 0,5 und c zwischen 0 und 0,2 liegen, sowie x-Werte zwischen 0,3 und 0,55 und y zwischen 0,1 und 0,15 annimmt.The composition of the layer is also advantageous
(Si a Cr b Al c ) 1-x (O 1-y H y ) x
given, the coefficients a between 0.5 and 0.8, b between 0.15 and 0.5 and c between 0 and 0.2, and x values between 0.3 and 0.55 and y between 0 , 1 and 0.15.

Zweckmäßig ist es weiterhin, daß möglichst viel des in der Schicht vorhandenen Wasserstoffs, d.h. mindestens 50 %, in Form von OH-Gruppen abgebunden ist.It is also expedient that as much of the hydrogen present in the layer, i.e. at least 50% is bound in the form of OH groups.

Widerstandsschichten der angegebenen Zusammensetzung und Struktur haben entsprechend der Zielsetzung die Eigenschaft, daß TK und Δ TK in einem weiten und höheren Bereich des spe­zifischen Widerstandes gleichzeitig nahe Null sind.Resistance layers of the specified composition and structure have the property according to the objective that TK and Δ TK are simultaneously near zero in a wide and higher range of the specific resistance.

Die Schichten lassen sich beispielsweise mit einem Plasma­tron herstellen. Das Sputtern erfolgt in einer H₂O-haltigen Atmosphäre mit einem Gesamtdruck zwischen 1 und 100 Pa.The layers can be produced, for example, with a plasmatron. The sputtering takes place in an atmosphere containing H₂O with a total pressure between 1 and 100 Pa.

Die Zusammensetzung und die Struktur der Schichten läßt sich beispielsweise folgendermaßen prüfen:The composition and structure of the layers can be checked as follows, for example:

Die Konzentration der Elemente Si, Cr, W und O läßt sich durch die Rutherfordrückstreuspektroskopie bestimmen, die H-Konzentration durch eine kernphysikalische Analysenmethode entsprechend der Reaktion
¹H(¹⁵N,αγ)¹²C
ca. 1 Woche nach Schichtherstellung. Geringe leichtflüchtige Wasserstoffanteile, die hier vernachlässigt werden und die sich außerdem schwer verfolgen lassen, sind zu diesem Zeit­punkt nicht mehr in den Schichten vorhanden.The concentration of the elements Si, Cr, W and O can be determined by Rutherford backscattering spectroscopy, the H concentration by a nuclear physical analysis method according to the reaction
¹H (¹⁵N, αγ) ¹²C
approx. 1 week after shift production. At this point in time, low volatile hydrogen components, which are neglected here and which are also difficult to track, are no longer present in the layers.

Der Nachweis der OH-Gruppen kann mit Hilfe der Infrarot­spektroskopie erfolgen; die Proben zeigen dann im Bereich von 3000 - 3600 cm⁻¹ Absorptionsbanden.The OH groups can be detected using infrared spectroscopy; the samples then show absorption bands in the range from 3000 to 3600 cm -1.

Die Entmischung und die Säulenstruktur lassen sich durch transmissions-elektronenmikroskopische Untersuchungen ein­schließlich der zugehörigen Beugungen nachweisen; die Säu­lenstruktur wird insbesondere bei Schrägstellung der Proben zum Elektronenstrahl deutlich.The segregation and the column structure can be demonstrated by transmission electron microscopic examinations including the associated diffractions; the column structure becomes particularly clear when the samples are inclined to the electron beam.

Beispiele 1 und 2Examples 1 and 2

Auf einem Substrat aus oxidiertem Silizium ist eine Wider­standsschicht von 80 nm Dicke vorhanden mit einer Zusammen­setzung, die durch
(Si₀,₅₅Cr₀,₄₃W₀,₀₂)1-x(O1-yHy)x
gegeben ist.On a substrate made of oxidized silicon there is a resistance layer of 80 nm thickness with a composition that passes through
(Si₀, ₅₅Cr₀, ₄₃W₀, ₀₂) 1-x (O 1-y H y ) x
given is.

Das Beispiel 1 entspricht dem Stand der Technik.Example 1 corresponds to the prior art.

Beispiel 1example 1

A: y ≈ 0 und x ≈ 0,3
B: y ≈ 0 und x ≈ 0,4
C: y ≈ 0 und x ≈ 0,5A: y ≈ 0 and x ≈ 0.3
B: y ≈ 0 and x ≈ 0.4
C: y ≈ 0 and x ≈ 0.5

Nach Herstellung und anschließender Einstelltemperung, die wie üblich dem Werkstoff angepaßt wird, ergeben sich fol­gende Eigenschaften:
(ρ. = spezifischer Widerstand des ungetemperten Materials in µΩ cm
ρ = spezifischer Widerstand in µΩ cm nach Einstell­temperung bei der Temperatur TE in oC. Dauer der Einstellung 2 h.
TK¹²⁵ = Temperkoeffizient des Widerstandes zwischen 25oC und 125oC
TK⁻⁵⁵= Temperkoeffizient des Widerstandes zwischen -55oC und 25oC
Δ TK = TK¹²⁵ - TK⁻⁵⁵)

Figure imgb0001
After production and subsequent tempering, which is adapted to the material as usual, the following properties result:
(ρ. = specific resistance of the unannealed material in µΩ cm
ρ = specific resistance in µΩ cm after tempering at temperature T E in o C. Duration of setting 2 h.
TK¹²⁵ = temperature coefficient of resistance between 25 o C and 125 o C
TK⁻⁵⁵ = temperature coefficient of resistance between -55 o C and 25 o C
Δ TK = TK¹²⁵ - TK⁻⁵⁵)
Figure imgb0001

Beispiel 2Example 2

A: y = 0,14 und x = 0,3
B: y = 0,12 und x = 0,4
C: y = 0,08 und x = 0,5A: y = 0.14 and x = 0.3
B: y = 0.12 and x = 0.4
C: y = 0.08 and x = 0.5

Dabei werden bei IR-spektroskopischen Untersuchungen breite Absorptionsbanden im Bereich von 3000 - 3600 cm⁻¹ mit inte­gralen Absorptionskoeffizienten zwischen 1 und 2 . 10⁵cm⁻² festgestellt.In the case of IR spectroscopic examinations, broad absorption bands in the range from 3000 to 3600 cm -1 with integral absorption coefficients between 1 and 2. 10⁵cm⁻² found.

Mit Hilfe der Transmissionselektronenmikroskopie wird ein Saulenaurbau der Schichten mit einer Saulenbreite von 5 bis 10 nm nachgewiesen. Die Auswertung von Beugungsuntersuchungen belegt die Entmischung der Schicht in O-reiche und O-arme Cluster. Dabei sind die O-reichen Schichten auch Si-reicher und die O-armeren auch Si-ärmer.With the help of transmission electron microscopy, a column structure of the layers with a column width of 5 to 10 nm is detected. The analysis of diffraction studies shows the separation of the layer into O-rich and O-poor clusters. The O-rich layers are also Si-rich and the O-poorer also Si-poorer.

Die Schichten lassen sich folgendermaßen herstellen:The layers can be produced as follows:

Es wird eine ultrahochvakuumdichte Anlage von 100 l Rezi­pientenvolumen benutzt, in die ein Plasmatron mit einem Target der Zusammensetzung 60 Si 38 Cr 2 W eingebaut ist. Die Saugleistung der Pumpen wird auf 20 l/s gedrosselt. Die Substratbewegung erfolgt nach dem bekannten Planetenprinzip. Der Abstand zwischen Target und Substratpalette ist 80 mm, der Arbeitsgasdruck (Argon) 4 Pa; die Kondensationsrate wird zu 10 nm/min festgelegt. Als Reaktivgas wird Wasser­dampf verwendet, der über eine Dusche eingelassen wird.An ultra-high vacuum-tight system of 100 l recipient volume is used, in which a plasmatron with a target of the composition 60 Si 38 Cr 2 W is installed. The suction power of the pumps is reduced to 20 l / s. The substrate movement is based on the known planetary principle. The distance between target and substrate pallet is 80 mm, the working gas pressure (argon) 4 Pa; the condensation rate is set at 10 nm / min. Steam is used as the reactive gas, which is let in via a shower.

Nach Einstelltemperung, die wiederum dem Werkstoff angepaßt wird, ergeben sich folgende Eigenschaften (Legende siehe Beispiel 1):

Figure imgb0002
After tempering, which in turn is adapted to the material, the following properties result (legend see example 1):
Figure imgb0002

Claims (4)

1. Präzisions-Widerstands-Dünnschicht auf der Basis von CrSiO mit 10 bis 50 Stoffmengenanteilen Sauerstoff und einem Atomverhältnis Si : Cr zwischen 1 und 10 sowie mit einem oder mehreren ochschmelzenden Metallen (x) von 0 bis 10 Stoffmengenanteilen und 0 bis 50 Stoffmengen­anteilen Al, bezogen auf das System CrSiXAl, dadurch gekennzeichnet, daß die Schicht zwischen 2 und 20 Stoff­mengenanteile Wasserstoff, bezogen auf das Gesamtsystem CrSiXAlOH, enthält, daß ein Teil des Wasserstoffs in Form von OH-Gruppen abgebunden ist, und daß die Schicht eine Entmischung in O-reiche und O-arme Cluster aufweist, die mit einer Säulenstruktur gekoppelt ist.1. Precision resistance thin layer based on CrSiO with 10 to 50 parts by weight oxygen and an atomic ratio Si: Cr between 1 and 10 and with one or more refractory metals (x) from 0 to 10 parts by weight and 0 to 50 parts by weight Al, based on the CrSiXAl system, characterized in that the layer contains between 2 and 20 parts by weight of hydrogen, based on the overall CrSiXAlOH system, that part of the hydrogen is bound in the form of OH groups, and that the layer is separated in O- has rich and O-poor clusters coupled with a pillar structure. 2. Präzisionswiderstandsschicht nach Anspruch 1, dadurch gekennzeichnet, daß die Zusammensetzung der Schicht durch
(SiaCrbWc)1-x (O1-yHy)x
gegeben ist, wobei die Koeffizienten a zwischen 0,5 und 0,85, b zwischen 0,15 und 0,5 und c zwischen 0 und 0,05 liegen, sowie x-Werte zwischen 0,3 und 0,55 und y zwischen 0,1 und 0,15 annimmt.2. Precision resistance layer according to claim 1, characterized in that the composition of the layer by
(Si a Cr b W c ) 1-x (O 1-y H y ) x
is given, the coefficients a between 0.5 and 0.85, b between 0.15 and 0.5 and c between 0 and 0.05, and x values between 0.3 and 0.55 and y between 0.1 and 0.15. 3. Präzisions-Widerstandsschicht nach Anspruch 1, dadurch gekennzeichnet, daß die Zusammensetzung der Schicht durch
(SiaCrbAlc)1-x(O1-yHy)x
gegeben ist, wobei die Koeffizienten a zwischen 0,5 und 0,8, b zwischen 0,15 und 0,5 und c zwischen 0 und 0,2 liegen, sowie x-Werte zwischen 0,3 und 0,55 und y zwi­schen 0,1 und 0,15 annimmt.3. Precision resistance layer according to claim 1, characterized in that the composition of the layer by
(Si a Cr b Al c ) 1-x (O 1-y H y ) x
is given, the coefficients a between 0.5 and 0.8, b between 0.15 and 0.5 and c between 0 and 0.2, and x values between 0.3 and 0.55 and y between 0.1 and 0.15. 4. Präzisions-Widerstandsschicht nach Anspruch 1 bis 3, dadurch gekennzeichnet, daß mindestens 50 % des in der Schicht vorhandenen Wasserstoffs in Form von OH-Gruppen abgebunden ist.4. Precision resistance layer according to claim 1 to 3, characterized in that at least 50% of the hydrogen present in the layer is set in the form of OH groups.
EP19890121543 1988-11-22 1989-11-21 Thin film for a precision resistor Ceased EP0370478A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DD32203888A DD283755A7 (en) 1988-11-22 1988-11-22 PRECISION RESISTANCE thin film
DD322038 1988-11-22

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EP0370478A2 true EP0370478A2 (en) 1990-05-30
EP0370478A3 EP0370478A3 (en) 1991-05-08

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0548652A1 (en) * 1991-10-20 1993-06-30 Motorola, Inc. Method of fabricating resistive conductive patterns on aluminum nitride substrates
EP0736881A2 (en) * 1995-03-09 1996-10-09 Philips Patentverwaltung GmbH Electrical resistance device with CrSi resistance layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3498832A (en) * 1967-03-16 1970-03-03 Motorola Inc Material and method for producing cermet resistors
DD158725A3 (en) * 1980-02-21 1983-02-02 Joachim Sonntag PRECISION RESISTANCE LAYER
DD230106A1 (en) * 1984-12-20 1985-11-20 Akad Wissenschaften Ddr PRECISION RESISTANCE STRATEGY FOR THE MEDIUM AND HIGH RESOURCES

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3498832A (en) * 1967-03-16 1970-03-03 Motorola Inc Material and method for producing cermet resistors
DD158725A3 (en) * 1980-02-21 1983-02-02 Joachim Sonntag PRECISION RESISTANCE LAYER
DD230106A1 (en) * 1984-12-20 1985-11-20 Akad Wissenschaften Ddr PRECISION RESISTANCE STRATEGY FOR THE MEDIUM AND HIGH RESOURCES

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0548652A1 (en) * 1991-10-20 1993-06-30 Motorola, Inc. Method of fabricating resistive conductive patterns on aluminum nitride substrates
EP0736881A2 (en) * 1995-03-09 1996-10-09 Philips Patentverwaltung GmbH Electrical resistance device with CrSi resistance layer
EP0736881A3 (en) * 1995-03-09 1997-06-04 Philips Patentverwaltung Electrical resistance device with CrSi resistance layer

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DK582989D0 (en) 1989-11-20
FI895533A0 (en) 1989-11-21
DD283755A7 (en) 1990-10-24
DK582989A (en) 1990-05-23
EP0370478A3 (en) 1991-05-08

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