EP0351634A3 - Semiconductor circuit for fast switching processes - Google Patents
Semiconductor circuit for fast switching processes Download PDFInfo
- Publication number
- EP0351634A3 EP0351634A3 EP19890112166 EP89112166A EP0351634A3 EP 0351634 A3 EP0351634 A3 EP 0351634A3 EP 19890112166 EP19890112166 EP 19890112166 EP 89112166 A EP89112166 A EP 89112166A EP 0351634 A3 EP0351634 A3 EP 0351634A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- schottky
- saturation
- fast switching
- process steps
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/0422—Anti-saturation measures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
In der digitalen Schaltungstechnik werden bipolare Tran sistoren wegen ihrer großen Steilheit vorteilhhaft für Schaltvorgänge eingesetzt. Da ein in Sättigung betriebener Transistor (3) ein verlangsamtes Schaltverhalten aufweist, muß bei schnellen Schaltvorgängen die Sättigung vermieden werden. In digital circuit technology, bipolar trans because of their steep slope advantageous for Switching operations used. Since a saturation operated Transistor (3) has a slow switching behavior, must Avoid saturation during fast switching operations will.
Bei Schottky-Dioden wird die Sättigung dadurch vermieden, daß parallel zur Basis-Kollektor-Sperrschicht eine Schottky- Diode geschaltet wird. With Schottky diodes, saturation is avoided by that a Schottky- parallel to the base-collector barrier layer Diode is switched.
Allerdings erfordert die Herstellung von Schottky-Dioden in der integrierten Schaltungstechnik zusätzliche Prozeß schritte. However, the manufacture of Schottky diodes in the integrated circuit technology additional process steps.
Die erfindungsgemäße Schaltung vermeidet diese zusätzlichen Prozeßschritte, indem sie die Schottky-Diode durch ein unidirektionales Halbleiterelement ersetzt, das aus Feld effekttransistoren (1, 2) zusammengestzt ist. The circuit according to the invention avoids these additional Process steps by passing the Schottky diode through a unidirectional semiconductor element replaced that from field effect transistors (1, 2) is assembled.
Für die Herstellung der Schaltung eignen sich besonders die Verfahren der BICMOS-Technologie, die die monolithische Integration von Bipolar- und MOS-Transistoren ermöglichen. The are particularly suitable for the production of the circuit Process of BICMOS technology, the monolithic Enable integration of bipolar and MOS transistors.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3824694A DE3824694A1 (en) | 1988-07-20 | 1988-07-20 | SEMICONDUCTOR CIRCUIT FOR FAST SWITCHING PROCESSES |
DE3824694 | 1988-07-20 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0351634A2 EP0351634A2 (en) | 1990-01-24 |
EP0351634A3 true EP0351634A3 (en) | 1991-02-27 |
EP0351634B1 EP0351634B1 (en) | 1994-06-01 |
Family
ID=6359176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP89112166A Expired - Lifetime EP0351634B1 (en) | 1988-07-20 | 1989-07-04 | Semiconductor circuit for fast switching processes |
Country Status (4)
Country | Link |
---|---|
US (1) | US5036233A (en) |
EP (1) | EP0351634B1 (en) |
JP (1) | JP2653408B2 (en) |
DE (1) | DE3824694A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68925950T2 (en) * | 1988-12-20 | 1996-07-25 | Texas Instruments Inc | High speed EPAL sense amplifier |
JP2768855B2 (en) * | 1991-01-29 | 1998-06-25 | 株式会社東芝 | Semiconductor device |
JPH0613886A (en) * | 1992-06-29 | 1994-01-21 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
US5481216A (en) * | 1994-05-31 | 1996-01-02 | National Semiconductor Corporation | Transistor drive circuit with shunt transistor saturation control |
US6693478B1 (en) * | 2002-08-09 | 2004-02-17 | Texas Instruments Incorporated | System and method for implementing soft power up |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4118640A (en) * | 1976-10-22 | 1978-10-03 | National Semiconductor Corporation | JFET base junction transistor clamp |
EP0093086A2 (en) * | 1982-04-23 | 1983-11-02 | Centre Electronique Horloger S.A. | Bipolar semi-conductor device and MOS circuit with such a device |
DE3709383A1 (en) * | 1987-03-21 | 1988-09-29 | Licentia Gmbh | Device for driving transistor switches in a Darlington arrangement |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1390034A (en) * | 1971-09-22 | 1975-04-09 | Ferranti Ltd | Semiconductor information storage devices |
US4286175A (en) * | 1979-05-21 | 1981-08-25 | Exxon Research & Engineering Co. | VMOS/Bipolar dual-triggered switch |
US4345171A (en) * | 1980-06-30 | 1982-08-17 | Texas Instruments Incorporated | Adaptable nonlinear transmission line terminator |
US4356416A (en) * | 1980-07-17 | 1982-10-26 | General Electric Company | Voltage controlled non-saturating semiconductor switch and voltage converter circuit employing same |
JPS5753152A (en) * | 1980-09-16 | 1982-03-30 | Nec Ic Microcomput Syst Ltd | Inverter circuit |
GB8322650D0 (en) * | 1983-08-23 | 1983-09-28 | Plessey Co Plc | Logic circuits |
US4616146A (en) * | 1984-09-04 | 1986-10-07 | Motorola, Inc. | BI-CMOS driver circuit |
JPS60143012A (en) * | 1984-10-24 | 1985-07-29 | Hitachi Ltd | Semiconductor integrated circuit device |
JP2544343B2 (en) * | 1985-02-07 | 1996-10-16 | 株式会社日立製作所 | Semiconductor integrated circuit device |
JP2568996B2 (en) * | 1985-02-22 | 1997-01-08 | 株式会社日立製作所 | Semiconductor integrated circuit device and carrier propagation circuit |
US4755697A (en) * | 1985-07-17 | 1988-07-05 | International Rectifier Corporation | Bidirectional output semiconductor field effect transistor |
US4638186A (en) * | 1985-12-02 | 1987-01-20 | Motorola, Inc. | BIMOS logic gate |
JPS62159515A (en) * | 1986-01-07 | 1987-07-15 | Fuji Electric Co Ltd | Composite semiconductor device |
JPS62214660A (en) * | 1986-03-17 | 1987-09-21 | Toshiba Corp | Semiconductor device |
JPS6382122A (en) * | 1986-09-26 | 1988-04-12 | Toshiba Corp | Logic circuit |
JPS63193720A (en) * | 1987-02-06 | 1988-08-11 | Toshiba Corp | Logic circuit |
US4746817A (en) * | 1987-03-16 | 1988-05-24 | International Business Machines Corporation | BIFET logic circuit |
-
1988
- 1988-07-20 DE DE3824694A patent/DE3824694A1/en active Granted
-
1989
- 1989-07-04 EP EP89112166A patent/EP0351634B1/en not_active Expired - Lifetime
- 1989-07-14 US US07/382,065 patent/US5036233A/en not_active Expired - Fee Related
- 1989-07-18 JP JP1183842A patent/JP2653408B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4118640A (en) * | 1976-10-22 | 1978-10-03 | National Semiconductor Corporation | JFET base junction transistor clamp |
EP0093086A2 (en) * | 1982-04-23 | 1983-11-02 | Centre Electronique Horloger S.A. | Bipolar semi-conductor device and MOS circuit with such a device |
DE3709383A1 (en) * | 1987-03-21 | 1988-09-29 | Licentia Gmbh | Device for driving transistor switches in a Darlington arrangement |
Non-Patent Citations (1)
Title |
---|
IBM TECHNICAL DISCLOSURE BULLETIN, Band 14, Nr. 5, Oktober 1971, Seite 1592, Armonk, NY, US; J. HONG et al.: "Nonsaturating logic circuit" * |
Also Published As
Publication number | Publication date |
---|---|
EP0351634B1 (en) | 1994-06-01 |
JP2653408B2 (en) | 1997-09-17 |
EP0351634A2 (en) | 1990-01-24 |
DE3824694A1 (en) | 1990-02-01 |
US5036233A (en) | 1991-07-30 |
DE3824694C2 (en) | 1992-06-11 |
JPH0267819A (en) | 1990-03-07 |
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