EP0329432A2 - Elektronenemitter - Google Patents

Elektronenemitter Download PDF

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Publication number
EP0329432A2
EP0329432A2 EP89301475A EP89301475A EP0329432A2 EP 0329432 A2 EP0329432 A2 EP 0329432A2 EP 89301475 A EP89301475 A EP 89301475A EP 89301475 A EP89301475 A EP 89301475A EP 0329432 A2 EP0329432 A2 EP 0329432A2
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EP
European Patent Office
Prior art keywords
layer
electrode
emitting device
electron emitting
film
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Granted
Application number
EP89301475A
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English (en)
French (fr)
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EP0329432A3 (en
EP0329432B1 (de
Inventor
Ken Eguchi
Haruki Kawada
Kunihiro Sakai
Hiroshi Matsuda
Kiyoshi Takimoto
Hisaaki Kawade
Yuko Morikawa
Yoshihiro Yanagisawa
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Canon Inc
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Canon Inc
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Priority claimed from JP3393688A external-priority patent/JP2715301B2/ja
Priority claimed from JP63033934A external-priority patent/JPH01209643A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of EP0329432A2 publication Critical patent/EP0329432A2/de
Publication of EP0329432A3 publication Critical patent/EP0329432A3/en
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Publication of EP0329432B1 publication Critical patent/EP0329432B1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Definitions

  • the present invention relates to an electron emitting device, and particularly to an electron emitting device used in an electron generator (or electron-generating apparatus). It is also concerned with a method for driving said electron emitting device or electron generator.
  • Solid-state electron beam generators are apparatus in which an electric field is applied to a junction between dissimilar materials, formed in a semiconductor, to cause electron beams to be radiated outside from the surface of the semiconductor.
  • Japanese Patent Publication No. 54-30274 discloses an apparatus in which a forward voltage is applied to an np junction formed in a mixed crystal of AlP with GaP to cause electrons to be emitted from the surface of a P-type region.
  • Japanese Patent Laid-Open No. 54-111272 discloses a solid-­state electron beam generator in which a reverse voltage is applied to a pn junction at least a part of which has been exposed into an opening provided in an insulating layer on the surface of a semiconductor, and also an accelerating electrode is so provided to the insulating layer as to extend to the edge of the opening.
  • 56-15529 also discloses a semiconductor device in which an accelerating electrode is provided at the edge of an opening provided in an insulating layer on the surface of a semiconductor, and a reverse voltage is applied to a pn junction extending, within the opening, in parallel to the surface of the semiconductor to cause electrons to be emitted outside the semiconductor.
  • These Japanese Patent Laid-Opan Nos. 54-111272 and 56-­15529 each also disclose an electron beam generator comprising electron-emitting devices integrated on a semiconductor substrate, respectively.
  • Japanese Patent Laid-Open No. 57-38528 discloses an electron-­emitting multiple cold cathode in which devices capable of emitting electrons from the surface of a semiconductor by applying a bias voltage to a pn junction in the forward direction are integrated on a semiconductor substrate.
  • solid-state electron beam generators have a number of advantages such that they are compact and capable of emitting electrons by use of the voltage applied to the pn junction. Making the most of the advantage that they can be made compact, it can be contemplated to provide an apparatus in which a plurality of electron beams are arranged, but the wiring for driving such an electron beam generator becomes complicated, having raised another problem.
  • An object of the present invention is to provide an electron emitting device, comprising a first layer capable of undergoing transition from an electrically high resistance state to a low resistance state when irradiated by a radiant ray and a second layer capable of emitting electrion, laminated on a substrate, which can eliminate the above disadvantages involved in the prior art, and is capable of emitting an electron beam according to an input of light and with a simple constitution, and also to provide an electron emitting device that can use light in a wide wavelength range as an input signal.
  • Another object of the present invention is to provide an electron emitting device, comprising; a first electrode provided on a substrate; a first layer provided on said electrode and capable of undergoing transition from an electrically high resistance state to a low resistance state when irradiated by a radiant ray; and a conductive layer, an insulating layer and further a second electrode, laminated on said first layer, which can effectively achieve driving of electron emitting devices without any complicated wiring, when a plurality of the electron emitting devices are arranged in a matrix fashion to form a solid-state electron beam generator.
  • Another object of the present invention is to provide an electron generator, comprising said electron emitting device, a means for apoplying an electric field to said device, and a means for irradiating a radiant ray on said device.
  • Another object of the present invention is to provide a method for driving an electron emitting device, comprising; applying a voltage to an electron emitting device comprising a first electrode provided on a substrate; a first layer provided on said electrode and capable of undergoing transition from an electrically high resistance state to a low resistance state when irradiated by a radiant ray; and a conductive layer, an insulating layer and further a second electrode, laminated on said first layer; the voltage being kept applied between said first electrode and said second electrode; and making light incident from the first electrode side to generate an electron beam from the electrode surface on the side opposite to the light-incident side.
  • the present invention provides an electron emitting device, comprising lamination of; a first electrode provided on a substrate; a photoswitching layer provided on said electrode and capable of undergoing transition from an electrically high resistance state to a low resistance state when irradiated by a radiant ray; and an electron-emitting layer formed on said switching layer and comprising a conductive layer, an insulating thin film and further a second electrode.
  • the electron emitting device of the present invention which is driven by light, is characterized by having an electron-emitting portion comprising an insulating thin film disposed between a pair of electrodes, and further a photoswitching portion capable of undergoing transition from an electrically high resistance state to a low resistance state when irradiated by light, which is connected in series with said electron-emitting portion.
  • the above switching portion undergoes transition from an electrically high resistance state to a low resistance state when irradiated by light, and a high electric field exceeding a threshold value is applied to the electron-­emitting portion of an MIM type, thereby generating an electron beam.
  • irradiation by light can readily achieve emission of electron beams.
  • Fig. 1 is a view to cross-sectionally illustrate the electron emitting device the present invention aims for.
  • the numeral 1 denotes a semiconductor layer that shows a photoswitching performance, and there can be used, for example, thin films such as amorphous silicon (a-Si), CdSe, CdS and ZnS, which exhibit photoconductivity.
  • the numeral 2 denotes an insulating thin film; and 3, a conductive layer.
  • the numeral 4 denotes a first electrode, which may preferably comprise a transparent electrode made of SnO2 or ITO, but it is also possible to use a metal electrode comprising a metal such as Al, Au or Pt deposited in a semi-transparent state.
  • the numeral 5 denotes a second electrode; 6, an insulating layer comprising, for example, SnO2; and 7, an electron-­accelerating electrode.
  • a forward bias is applied between the first and second electrodes, i.e., the upper and lower electrodes, through a drive circuit DC.
  • This applied voltage is set to a level slightly higher than the threshold voltage at which electrons begin to be emitted from the MIM structure (constituted of 3/2/5).
  • the light L incident from the substrate 8 side is transmitted through the first electrode 4 and switches the semiconductor layer 1 into a low resistance state.
  • the electric field applied to the device turns to be applied entirely to the MIM structure, where the electrons having passed through the insulating thin film 2 by tunneling go through the second electrode 5, and are further accelerated by the electric field produced by the accelerating electrode 7, so that an electron beam EB is emitted.
  • the insulating thin film should comprise an ultra-thin film, more specifically, have a film thickness in the range of from several angstroms to several hundred angstroms, preferably not more than 200 ⁇ , and more preferably not more than 100 ⁇ and not less than 5 ⁇ . It should be further noted that the device performance and the stability thereof are greatly affected by whether or not such an insulating thin film is homogeneous in its in-plane and thickness directions.
  • a method most suited for forming the insulating thin film may include the LB process.
  • This LB process can readily form a monomolecular film of an organic compound, having the hydrophobic part and hydrophilic part in one molecule, or a built-up film thereof, on any electrode or on any substrate containing any electrode, and also can stably provide an organic ultra-thin film in the order of a molecular length, which is uniform and homogeneous over a large area.
  • the LB process is a process of making a monomolecular film or a built-up film thereof by utilizing the mechanism that when a hydrophilic part and a hydrophobic part are appropriately balanced (i,e, amphiphatic balance) in a structure having the both parts in the molecule, the molecule forms a monomolecular layer on a water surface with its hydrophilic group downward.
  • the group that constitutes the hydrophobic part includes all sorts of hydrophobic groups such as saturated or unsaturated hydrocarbon groups and condensed polycyclic aromatic groups, which are commonly well known in the art. These each constitute the hydrophobic part alone or in combination of plural ones.
  • the group most typical as a component for the hydrophilic part may include hydrophilic groups as exemplified by a carboxyl group, an ester group, an acid amido group, an imido group, a hydroxyl group, a sulfonyl group, a phosphoric acid group, and amino groups (primary, secondary, tertiary, and quaternary).
  • Molecules having these hydrophobic part and hydrophilic part in a good balance can form the monomolecular film on a water surface.
  • these molecules form an insulating monomolecular film, and hence the monomolecular built-up film also exhibits insulating properties, so that they can be said to be materials very preferable for the present invention.
  • the following molecules can be exemplified.
  • Coloring matters having a porphyrin structure such as phthalocyanine and tetraphenylporphyrin; azulene dyes having a squalilium group and a croconic methine group as bonding chains; and dyes analogous to cyanine dyes, combined through a squalilium group and a croconic methine group; or cyanine dyes; nitrogen-­containing heterocyclic ring compounds such as quinoline, benzothiazole and benzoxazole; and chain compounds bonded with condensed polycyclic aromatics such as anthracene and pyrene and an aromatic ring or heterocyclic ring compounds; etc.
  • Polyimide derivatives polyamic acid derivatives, polyamide derivatives, all sorts of fumaric acid copolymers, all sorts of maleic acid copolymers, polyacrylic acid derivatives, all sorts of acrylic acid copolymers, polydiacetylene derivatives, all sorts of vinyl compounds, synthetic polypeptides, biopolymeric compounds such as bacteriorhodopsin and cytochrome C.
  • Carboxylic acids and carboxylic acid salts having a long-chain alkyl group, or fluorinated derivatives of these, esters having at least one long-­chain alkyl group, sulfonic acid and salts thereof, phosphoric acid and salts thereof, or fluorinated derivatives of these.
  • polymeric compounds, or macrocyclic compounds such as phthalocyanine are desirably used particularly from the viewpoint of thermal resistance.
  • polymeric materials such as polyimides, polyacrylic acids, all sorts of fumaric acid copolymers or all sorts of maleic acid copolymers can not only bring about such a superior thermal resistance but also reduce the film thickness per layer to about 5 ⁇ .
  • any materials other than the above are also preferred in the present invention so long as they are suited to the LB process.
  • Such amphiphatic molecules form a layer of monomolecules on a water surface with their hydrophilic groups downward.
  • k is the Boltzmann's constant
  • T the absolute temperature.
  • the mutual action between molecules can be strengthened by making A sufficiently small, to form "a condensed film (or solid film)" comprising a two-dimensional solid.
  • the condensed films can be transferred layer by layer on the surfaces of any articles such as resins or metals having various quality and shapes.
  • the monomolecular film or the built-up film thereof can be formed by using this method, and the resulting film can be used as an insulating zone, i.e., the potential barrier layer, for use in a photoswitching device exemplified by the present invention.
  • a specific preparation method includes, for example, the following:
  • a desired organic compound is dissolved in a solvent such as chloroform, benzene or acetonitrile.
  • a solvent such as chloroform, benzene or acetonitrile.
  • a partition plate (or a float) 23 is provided so that the resulting spread film 22 may not be freely diffused and excessively spread on the aqueous phase 21, thereby limiting the spreading area of the spread film 22 and controlling the gathering state of film substances, to obtain the surface pressure ⁇ proportional to the gathering state.
  • This partition plate 23 is moved to reduce the spreading area to control the gathering state of the film substance, so that the surface pressure is gradually increased so as to be set to the surface pressure ⁇ suited for the preparation of the film.
  • a clean substrate 24 is gently vertically raised or lowered, so that the monomolecular film of the organic compound is transferred on the substrate 24.
  • Such a monomolecular film 31 is a film in which the molecules are arranged with the neat order as diagramatically illustrated in Fig. 6A or Fig. 6B.
  • the monomolecular film 31 is prepared in the above way, and the above operation may be repeated to form the built-up film with a desired build-up number.
  • the monomolecular film 31 can be transferred on the substrate 24 not only by the above-described vertical dip method but also by a horizontal adhesion method, a rotating cylinder method, etc.
  • the horizontal adhesion method is a method in which the substrate is horizontally brought into contact with the water surface to transfer the monomolecular film 31 on the substrate
  • the rotary cylinder method is a method in which a cylindrical substrate is rotated on the water surface to transfer the monomolecular film 31 on the surface of the substrate.
  • the substrate 24 having a hydrophilic surface is drawn up from the water in the direction crossing the water surface, so that the monomolecular film 31 of the organic compound whose hydrophilic part 32 faces the substrate 24 side is formed on the substrate 24 (Fig. 6B).
  • the substrate 24 may be raised and lowered as described above, and thus the monomolecular film 31 is built up layer by layer for each procedure, forming a built-up film 41. Since the directions of the film-­forming molecules are set reversely in a drawing up step and in a dipping step, this method can form a Y-­type film in which the hydrophobic group parts 33a and 33b of the organic compound have faced each other between the respective layers of the monomolecular films 31 (Fig. 7A).
  • the monomolecular film 31 wherein the hydrophobic parts 33 of the organic compound have faced the substrate 24 side is formed on the substrate 24 (Fig. 7B).
  • this method there is no alternation of the direction of film-­forming molecules when monomolecular films 31 are built-up, and can be formed an X-type film in which the hydrophobic parts 32a and 33b have faced the substrate side in all the layers (Fig. 7B).
  • a built-up film 41 in which the hydrophilic parts 32a and 32b have faced the substrate 24 side in all the layers is called a Z-type film (Fig. 7C).
  • the method of transferring the monomolecular film 31 on the substrate 24 is by no means limited to the above, and, in instances where a substrate with a large area is used, a method can be employed such that the substrate is push forward from a roll into the aqueous phase. Also, the manners in which the hydrophilic part and hydrophobic part face to the substrate are described above as a principle, and can also be relied on surface treatment of the substrate.
  • the potential barrier layer comprised of the monomolecular film 31, or the built-up film 41 thereof, of the organic compound is formed on the substrate 24.
  • Processes other than the LB process as exemplified by vacuum deposition, molecular beam epitaxy and electrolytic polymerization, can also be applied so long as the thin and uniform film can be formed.
  • Such a film may also be formed using inorganic materials without limitation to the organic ones.
  • the conductive materials and the electrode materials may also be any of those having a high conductivity, including, for example, metals such as Au, Pt, Ag, Pd, Al, In, Sn and Pb, or alloys of these as exemplified by LaB6 and TiC, and also graphite or silicide, as well as a number of materials including conductive oxides such as ITO, these of which can be considered to be applied in the present invention. Care should, however, be taken here not to damage the LB layer when an electrode is formed on the LB film in making the MIM structure in the present invention. For this purpose, it should be avoided to use fabrication or treatment steps that require high temperatures (>100°C).
  • the electrode may preferably have a thickness of not more than 500 ⁇ , and more preferably not more than 200 ⁇ .
  • the device of the present invention can be fabricated according to conventionally known thin-film techniques.
  • the electron emitting device may also be constituted as illustrated in Fig. 2.
  • the device illustrated in Fig. 2 has a photoswitching portion provided with an alternately laminated structure comprising an insulating thin film 9, a conductive thin film (or semiconductive thin film) 10 and another insulating thin film 11 which are disposed between a first electrode 4 and a conductive layer 3.
  • an insulating layer made of polyimide is formed on a substrate on which Au has been formed as the first electrode, i.e., the lower electrode, and then an Al layer is provided by vapor deposition, which Al layer is oxidized to form an Al2O3 layer, and finally Al is formed as the second electrode (upper electrode).
  • the first electrode i.e., the lower electrode
  • an Al layer is provided by vapor deposition, which Al layer is oxidized to form an Al2O3 layer, and finally Al is formed as the second electrode (upper electrode).
  • light may be irradiated while applying an electric field between the both upper and lower electrodes, thus obtaining a device capable of switching an electric circuit from the switch-off state to the switch-on state when irradiated by light.
  • the photoswitching portion having the MIM structure may be connected in series with the above-described electron-emitting portion having the MIM structure (constituted of 3/2/5).
  • the second electrode made of Al in the photoswitching portion and the conductive layer 3 in the electron-emitting portion may be formed of the same layer as illustrated in Fig. 2.
  • the device illustrated in Fig. 2 is operated on the same principle as that of the device illustrated in Fig. 1.
  • the on/off ratio at the photoswitching portion is as high as about 106 and the current value in the on state can be set to a higher value, so that the current value of electron beams can also be made higher.
  • Fig. 3 illustrates a cross section of devices where the device of the present invention, as illustrated in Fig. 1, is formed in plurality.
  • the conductive layer 3 formed is patterned corresponding to every picture element, i.e., every device for emitting electrons.
  • Fig. 4 illustrates an embodiment in which the electron emitting devices illustrated in Fig. 3 are arranged in a matrix fashion.
  • a light source system may be further combined with this, thereby obtaining an effectively utilizable electron generator.
  • a device having the structure comprising the photoswitching layer 1, conductive layer 3, insulating thin film 2 and electrode 5 (Fig. 1) was fabricated in the following procedures: An amorphous silicon film with a film thickness of 1,000 ⁇ was formed on a cleaned ITO glass-substrate (4 + 8) to form the photoswitching layer 1. In this occasion, the film was formed according to glow discharging (introduced gas: SiH4/H2; rf power: 0.05 W/cm2; pressure: 0.12 torr; substrate temperature: 250°C; deposition rate: 30 ⁇ /min). Next, Al was vacuum deposited (film thickness: 600 ⁇ ) according to resistance heating to form the conductive layer 3. Thereafter, a ten-layers built-up film (film thickness: about 40 ⁇ ) of polyimide monomolecular films was formed by using the LB process, to provide the insulating thin film 2.
  • the polyamide acid represented by formula (1) was dissolved in a mixed solvent of N,N′-­dimethylacetamide with benzene (1:1 V/V) in concentration of 1 x 10 ⁇ 3 M calculated as the monomer, and thereafter the solution was mixed in 1:2 with a 1 x 10 ⁇ 3 M solution separately prepared by dissolving N,N-dimethyloctadecylamine in the same mixed solution as above, thus preparing a solution of the polyamide acid octadecylamine salt represented by formula (2).
  • aqueous phase 21 (Fig. 5) comprised of pure water of 20°C in water temperature to form a monomolecular film 31 on the water surface.
  • a float as the partition plate 23 was moved to reduce the spreading area until the surface pressure was raised up to 25 mN/m.
  • a substrate provided with the above lower electrode was gently put in water at a rate of 5 mm/min in the direction crossing the water surface, and thereafter subsequently gently drawn up at a rate of 3 mm/min, thus making a two-layers Y-type monomolecular built-up film.
  • Such operations were repeated to form a ten-layers monomolecular built-up film of the polyimide acid octadecylamine salt.
  • a substrate was immersed in a mixed solution of acetic anhydride, pyridine and benzene (1:1:3) for 12 hours to make the polyimide acid octadecylamine salt into an imide [Formula (3)] to obtain a ten-layers polyimide monomolecular built-up film.
  • Example 1 Devices were fabricated in entirely the same manner as Example 1 except that the insulating thin film 2 was formed according to the LB process by use of the insulating materials shown in Table 1, and the electron beam conversion efficiency thereof was observed to obtain the results as shown in Table 1.
  • a product by which a sufficient electron beam conversion efficiency was readily obtained was evaluated as AA; a product for which the applied voltage must be increased before obtaining a sufficient electron beam conversion efficiency, as B; and a product standing intermediate between them, as A.
  • An electron emitting device was fabricated in entirely the same manner as Example 1 except that the photoswitching layer was formed with a CdS vapor-­deposited film in place of the amorphous Si film.
  • An electron emitting device was fabricated in entirely the same manner as Example 1 except that the insulating layer was prepared according to vapor deposition in place of the LB process.
  • Powder of polyphenylene sulfide is put in a crucible, and evaporation is caused by heating with an indirectly heated heater. After sufficiently degassed accompanying the melting of PPS, the crucible temperature and substrate temperature were set to 400°C and 200°C, respectively, to effect vapor deposition of PPS with a film thickness of 50 ⁇ while monitoring a film thickness meter.
  • the LB process has been used in forming the insulating layers, but any film formation processes can be used without limitation to the LB process, so long as they can make a very thin, uniform insulating thin film. They specifically include vacuum deposition, electrolytic polymerization, and CVD, thus expanding the range of usable materials. Needless to say, it is also possible to use oxide coatings of metal electrodes, having been hitherto studied for use in MIM-type electron-emitting devices.
  • any film formation processes may be used so long as they can make a uniform thin film, as having been described, to which the present invention requires no limitations.
  • the present invention further requires no limitations to the materials for the substrate or the shape of the device.
  • An electron emitting device was fabricated in entirely the same manner as Example 1 except that a pnpn-type photodiode substrate was used in place of the ITO glass-substrate and photoswitching film.
  • the electron-emitting portion (constituted of 5, 2 and 3 in Fig. 1) was laminated on the anode side of the pnpn-­type photodiode. Irradiation of white light resulted in emission of an electron beam, and also successive emission of the electron beam even after stop of irradiation of the white light, showing that a memory function was imparted. Moreover, it was possible to stop the electron beam from emission by lowering the voltage applied to the device.
  • An electron emitting device was fabricated, having the structure as illustrated in Fig. 2, comprising a transparent or semitransparent electrode 4; a conductive layer 3; a photoswitching portion provided with an alternately laminated structure comprising an insulating thin film 9, a conductive thin film (or semiconductive thin film) 10, and another insulating thin film 11, which are disposed between said electrode 4 and conductive layer 3; and an electron-emitting portion comprising said conductive layer 3, an electrode 5, and an insulating thin film 2 disposed between said conductive layer 3 and electrode 5; which are laminated in series on a substrate 8.
  • Example 3 On the above Al conductive layer 3, a ten-­ layers built-up film of polyimide monomolecular films was further formed following the procedures in Example 1 by using the LB process, to provide the insulating thin film 2, followed by vacuum deposition of Au (film thickness: 300 ⁇ ) to provide the electrode 5. Next, an accelerating electrode 7 was additionally provided, thus an electron emitting device was fabricated.
  • an amorphous silicon film was formed with a film thickness of 30 ⁇ to provide the semiconductive thin film 10.
  • the film was formed according to glow discharging (introduced gas: SiH4, H2; rf power: 0.01 W/cm2; pressure: 0.5 torr; substrate temperature: 250°C; deposition rate: 40 ⁇ /min).
  • SiH4 gas with ammonia gas was introduced to make deposition of a silicon nitride (Si3N4) film with a film thickness of 15 ⁇ (rf power: 0.02 W/cm2; pressure: 0.5 torr; substrate temperature: 250°C; deposition rate: 50 ⁇ /min), thus the insulating thin film 9 was formed.
  • Example 14 On the surface of such a silicon nitride film, Al was vacuum deposited (film thickness: 600 ⁇ ) to provide the conductive layer 3.
  • the insulating thin film 2 and electrode 5 were further formed according to the same procedures as Example 14.
  • the electron-emitting characteristics of the resulting sample was measured in the same manner as Example 14 to find that it showed a similar electron emitting beam conversion performance.
  • the present Example provides an example in which the electron emitting device as illustrated in Fig. 3 is arranged in a matrix fashion (MEBS). Hitherto, in instances in which a plurality of electron emitting devices of this type are integrated and are each independently driven, the wiring to each device is necessarily complicated, and this has caused an obstruction to the achievement of a high integration. In the instance of the present device, a plurality of electron emitting devices MEBS are merely provided with a common first electrode 4 on the light input side, and on the other hand provided with a common second electrode 5 on the electron beam emission side, where openings 12 provided with a conductive layer having been patterned and serving as an intermediate electrode are provided corresponding respectively to electron beam sources.
  • MEBS matrix fashion
  • a voltage slightly larger than the voltage at which the emission of electrons occurs from the MIM structure portion constituted of the conductive layer and the second electrode is applied between the common first electrode 4 and common second electrode 5, and the emission of the respective electron beams are so designed as to take place when light is inputted to the substrate side corresponding to the electron beam sources.
  • the electron beam EB11 is emitted from the electron beam generating device into which the light L11 has entered, and similarly the electron beam EBmn, from the device into which the light Lmn has entered.

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EP19890301475 1988-02-18 1989-02-16 Elektronenemitter Expired - Lifetime EP0329432B1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP33936/88 1988-02-18
JP3393688A JP2715301B2 (ja) 1988-02-18 1988-02-18 光電子ビーム変換素子
JP63033934A JPH01209643A (ja) 1988-02-18 1988-02-18 電子ビーム発生装置の駆動方法
JP33934/88 1988-02-18

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EP0329432A2 true EP0329432A2 (de) 1989-08-23
EP0329432A3 EP0329432A3 (en) 1990-09-05
EP0329432B1 EP0329432B1 (de) 1996-05-15

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0642147A1 (de) * 1993-09-01 1995-03-08 Hamamatsu Photonics K.K. Photoemitter, Elektronenröhre, und Photodetektor
EP0718865A2 (de) * 1994-12-21 1996-06-26 Hamamatsu Photonics K.K. Photovervielfacher mit einer aus Halbleitermaterial bestehender Photokathode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735186A (en) * 1971-03-10 1973-05-22 Philips Corp Field emission cathode
US3921031A (en) * 1973-01-30 1975-11-18 Commissariat A L En Atomique & Electroemissive component
US4005465A (en) * 1974-06-04 1977-01-25 The United States Of America As Represented By The Secretary Of The Army Tunnel emitter photocathode
EP0041119A1 (de) * 1980-06-02 1981-12-09 International Business Machines Corporation Kaltemissionsvorrichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735186A (en) * 1971-03-10 1973-05-22 Philips Corp Field emission cathode
US3921031A (en) * 1973-01-30 1975-11-18 Commissariat A L En Atomique & Electroemissive component
US4005465A (en) * 1974-06-04 1977-01-25 The United States Of America As Represented By The Secretary Of The Army Tunnel emitter photocathode
EP0041119A1 (de) * 1980-06-02 1981-12-09 International Business Machines Corporation Kaltemissionsvorrichtung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0642147A1 (de) * 1993-09-01 1995-03-08 Hamamatsu Photonics K.K. Photoemitter, Elektronenröhre, und Photodetektor
US5591986A (en) * 1993-09-02 1997-01-07 Hamamatsu Photonics K.K. Photoemitter electron tube and photodetector
US5747826A (en) * 1993-09-02 1998-05-05 Hamamatsu Photonics K.K. Photoemitter electron tube, and photodetector
EP0718865A2 (de) * 1994-12-21 1996-06-26 Hamamatsu Photonics K.K. Photovervielfacher mit einer aus Halbleitermaterial bestehender Photokathode
EP0718865A3 (de) * 1994-12-21 1998-02-04 Hamamatsu Photonics K.K. Photovervielfacher mit einer aus Halbleitermaterial bestehender Photokathode

Also Published As

Publication number Publication date
EP0329432A3 (en) 1990-09-05
DE68926467T2 (de) 1996-09-19
EP0329432B1 (de) 1996-05-15
DE68926467D1 (de) 1996-06-20

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