EP0326857A1 - Thin film solar cell array - Google Patents

Thin film solar cell array Download PDF

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EP0326857A1
EP0326857A1 EP89100808A EP89100808A EP0326857A1 EP 0326857 A1 EP0326857 A1 EP 0326857A1 EP 89100808 A EP89100808 A EP 89100808A EP 89100808 A EP89100808 A EP 89100808A EP 0326857 A1 EP0326857 A1 EP 0326857A1
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solar cell
layer
layers
thin
film solar
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German (de)
French (fr)
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EP0326857B1 (en
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Wilfried Dipl.-Phys. Jürgens
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Siemens AG
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Siemens AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the invention relates to a thin-film solar cell arrangement with at least a first solar cell and a second solar cell of the pin or nip type, which are arranged as a tandem cell to each other, each having a p-type p-layer, an intrinsic i-layer, an n-type n - Have layer and electrical contacts, suitable for modular construction with series connection.
  • thin-film solar cells which contain a so-called pin junction.
  • An undoped, i.e. H. Provide intrinsic, i-layer on one side with a p-doped p-layer and on the opposite side with an n-doped n-layer.
  • the i-layer is e.g. B. built on the basis of amorphous silicon.
  • An effective solar cell made of amorphous silicon must have a uniform and as large as possible electrical field in the entire absorption zone.
  • a higher field strength is e.g. B. achieved by a thinner i-layer. However, this only absorbs part of the incident light.
  • two solar cells are combined in a tandem cell that absorb the light in different wavelength ranges (see e.g. JJ Yang, Intern. Conf. On Stability of a-Si Alloy Mat. And Devices, 28.- Jan. 30, 87, Palo Alto. California, pp. 295-303).
  • the different wavelength sensitivity is due to different additives to the amorphous silicon of the i-layer such.
  • the total voltage of the tandem cell of the arrangement is the sum of the individual voltages.
  • the electrical values are adjusted e.g. B. by adjusting the thicknesses of the two i-layers.
  • Another possibility is to isolate the two solar cells completely, e.g. B. on different sides of a substrate or on two substrates. Each solar cell is then provided with two contacts that can be connected independently. The application of the solar cells on the different sides of the substrate is cumbersome and requires increased care. The interconnection of the solar cells is very labor intensive due to the many individual contacts.
  • the invention has for its object a thin layer Specify solar cell arrangement that is stable with respect to aging, that is easy to design, that is suitable for modular construction and that is easy to manufacture on an industrial scale.
  • the object is achieved in a thin-film solar cell arrangement of the type mentioned at the outset in that the solar cells are arranged in pairs in relation to one another in such a way that adjacent layers of the first solar cell and the second solar cells are of the same conductivity type and that the p-layers of the first solar cell and the second solar cell and the n layers of the first solar cell and the second solar cell are electrically connected to one another in the manner of a parallel connection.
  • This arrangement has the advantage of increased stability with regard to aging behavior, since the layers can be thin ( ⁇ 0.2 ⁇ m).
  • the electrical voltages on the two solar cells are the same.
  • the connection of the two solar cells corresponds to a parallel connection.
  • the currents in the cells can therefore be arbitrary without reducing the efficiency of the arrangement.
  • the adaptation of two cells in such an arrangement is therefore very simple.
  • intrinsic semiconductor material with different additives that absorb the light in different wavelength ranges is used for the intrinsic i-layers of the first solar cell and the second solar cell.
  • i layers z. B. provided on the basis of hydrogenated amorphous silicon, for example carbon, germanium or fluorine are suitable as an additive.
  • the adjacent layers of the first solar cell and the second solar cell may be design as a double layer. This is e.g. B. the case when the second solar cell to be manufactured in a different plant than the first. If different materials are used in the two solar cells, possible difficulties can be avoided by providing an insulation layer between the adjacent layers. The arrangement then has four connections.
  • a very simple construction of the arrangement is achieved in that the adjacent layers of the first solar cell and the second solar cell, which according to the invention are of the same conductivity type, are formed as a single common layer.
  • contact layers To contact the solar cell arrangement with i-layers based on amorphous silicon, contact layers must be provided on the surface of the layer sequence of the solar cells facing away from the common layer. At least one of these contact layers, through which the incidence of light occurs, consists of transparent, electrically conductive material. Contacting via contact layers leads to good current dissipation. The application of contact layers is technologically simpler in the manufacturing process than the mounting of individual electrodes.
  • both contact layers consist of transparent, electrically conductive material, the incidence of light can be used from both sides of the solar cell arrangement.
  • the light that was not absorbed in the thin-film solar cell arrangement and that is reflected on the surface behind the thin-film solar cell arrangement back into the thin-film solar cell arrangement can continue used to generate electricity (so-called bifacial cells, see BA Pantoja-Lopez, J. Garcia Martin, 7th EPSEC, Sevilla / Spain 1986, pp. 137-141)
  • the layer structure has a layer sequence of a first p-type, a first intrinsic, a common n-type, a second intrinsic and a second p-type layer.
  • a contact layer is adjacent to the first p-type layer and the second p-type layer.
  • the individual tandem cells are separated from one another in the layer structure by trenches.
  • the flanks of the trenches, which run perpendicular to the layer structure, are each covered with a structured insulator layer in such a way that the common n-conducting layer is exposed on one flank and that the two contact layers are exposed on the other, opposite flank.
  • the trench is filled with an electrically conductive material.
  • the structuring of the insulator layers electrically connects the common n-conducting layer of the one tandem cell to the contact layers and thus to the p-conducting layers of the subsequent tandem cell.
  • the structuring of the insulator layers is such. B. achieved by etching steps in the flanks of the trench.
  • the common n-type layer or the contact layer are located on the surface of the steps.
  • the steps are created, for example, by selective etching.
  • the first contact layer 2 and the second contact layer 8 consist of a transparent conductive material z. B. from doped SnO2.
  • the first p-layer 3 and the second p-layer 7 consist of amorphous silicon and are p-conductive by doping with boron.
  • the first i-layer 4 and the second i-layer 6 are intrinsic layers.
  • the first i-layer 4 consists of amorphous silicon germanium.
  • the second i-layer 6 consists of amorphous silicon.
  • the common n-layer 5 consists, for. B. made of microcrystalline silicon and is n-conductive by doping with phosphorus.
  • the layers have the following thicknesses: first p-layer 3: 15 to 20 nm, first i-layer 4: 100 to 250 nm, common n-layer 5: 20 to 40 nm, second i-layer 6: 300 to 700 nm, second p-layer 7: 15 to 20 nm.
  • FIG. 2 schematically shows the potential curve in the tandem cell along a section that runs perpendicular to the layer sequence in FIG. 1.
  • FIG. 2 also shows how the charge is transported through electrons and holes.
  • the layer structure 12 contains the substrate 1, the first contact layer 2, the first p-layer 3, the first i-layer 4, the common n-layer 5, the second i-layer 6, the second p-layer 7 and the second Contact layer 8.
  • a first tandem cell 13 and a second tandem cell 14 are separated by a trench 15.
  • the trench 15 runs perpendicular to the layer sequence down to the substrate 1.
  • a first flank 16 of the trench 15 has a first step 17.
  • the first flank 16 delimits the first tandem cell 13.
  • the first step 17 runs along the surface of the common n-layer 5.
  • a second flank 18 of the trench 15, which lies opposite the first flank 16 and which delimits the second tandem cell 14, has a second one Level 19 on.
  • the second step 19 runs on the surface of the first contact layer 2.
  • the first flank 16 and the second flank 18 are each covered with a structured insulator layer 20.
  • the insulator layers 20 are structured such that on the first flank 16 all layers are covered except for the common n-layer 5 and that on the second flank 18 all layers are covered except for the first contact layer 2 and the second contact layer 8.
  • the trench 15 is filled with electrically conductive material 21.
  • the electrically conductive material 21 connects the common n-layer 5 on the first flank 16 to the first contact layer 2 and the second contact layer 8 on the second flank 18.
  • the common n-layer 5 is the first tandem cell 13 electrically connected to the first p-layer 3 and the second p-layer 7 of the second tandem cell 14.
  • a multiple repetition of the connection between two tandem cells explained in FIG. 3 ensures in a module with many tandem cells that the tandem cells are connected in series and at the same time the solar cells contained in the tandem cells are connected in parallel.

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

The thin film solar cell array comprises at least two p-i-n-(n-i-p) solar cells which are arranged as a tandem cell (13, 14) in such a way that adjacent layers (5) of the two solar cells are of the same conductivity type. The two solar cells are interconnected in the manner of a parallel circuit. The thin film solar cell array is suitable for modular construction with series connection, the two solar cells in each of the tandem cells (13, 14) being jointly connected to the series circuit (21). …<IMAGE>…

Description

Die Erfindung betrifft eine Dünnschichtsolarzellenanordnung mit mindestens einer ersten Solarzelle und einer zweiten Solarzelle vom pin- oder nip-Typ, die als Tandemzelle zu­einander angeordnet sind, die jeweils eine p-leitende p-Schicht, eine intrinsische i-Schicht, eine n-leitende n-Schicht und elektrische Kontaktierungen aufweisen, geeig­net für Modulbauweise mit Serienverschaltung.The invention relates to a thin-film solar cell arrangement with at least a first solar cell and a second solar cell of the pin or nip type, which are arranged as a tandem cell to each other, each having a p-type p-layer, an intrinsic i-layer, an n-type n - Have layer and electrical contacts, suitable for modular construction with series connection.

Aus z. B. W. Heywang, "Amorphe und polykristalline Halb­leiter", Springer Verlag, Berlin, Heidelberg, New York, Tokio 1984, Seite 58 bis 64 sind Dünnschichtsolarzellen bekannt, die einen sogenannten pin-Übergang enthalten. Dabei ist eine undotierte, d. h. intrinsische, i-Schicht auf der einen Seite mit einer p-dotierten p-Schicht und auf der gegenüberliegenden Seite mit einer n-dotierten n-Schicht versehen. Die i-Schicht ist z. B. auf der Basis von amorphem Silizium aufgebaut.From e.g. B. W. Heywang, "Amorphous and polycrystalline semiconductors", Springer Verlag, Berlin, Heidelberg, New York, Tokyo 1984, pages 58 to 64, thin-film solar cells are known which contain a so-called pin junction. An undoped, i.e. H. Provide intrinsic, i-layer on one side with a p-doped p-layer and on the opposite side with an n-doped n-layer. The i-layer is e.g. B. built on the basis of amorphous silicon.

Eine effektive Solarzelle aus amorphem Silizium muß in der gesamten Absorptionszone ein gleichmäßiges und möglichst großes elektrisches Feld besitzen. Je höher die elektrische Feldstärke in der i-Schicht vorgesehen ist, desto weniger altert die Solarzelle. Eine höhere Feldstärke wird z. B. durch eine dünnere i-Schicht erzielt. Dadurch wird aber nur noch ein Teil des einfallenden Lichts absorbiert.An effective solar cell made of amorphous silicon must have a uniform and as large as possible electrical field in the entire absorption zone. The higher the electric field strength in the i-layer, the less the solar cell ages. A higher field strength is e.g. B. achieved by a thinner i-layer. However, this only absorbs part of the incident light.

Es ist bekannt, mehrere serienverschaltete pin-Zellen über­einander zu stapeln (siehe z. B. W. Heywang, "Amorphe und polykristalline Halbleiter", Springer Verlag, Berlin, Heidelberg, New York, Tokio 1984, Seite 64). Dadurch ver­größert sich die Absorption des Lichts. Durch die Serien­verschaltung vergrößert sich die Leerlaufspannung der Anordnung. Eine solche Anordnung, die aus zwei übereinander gestapelten Solarzellen besteht, wird allgemein Tandemzelle genannt und ist z. B. aus J. Yang, Intern. Conf. on Stability of a-Si Alloy Mat. and Devices, 28.-30. Jan. 87, Palo Alto. California, S. 295-303 bekannt.It is known to stack several series-connected pin cells one above the other (see, for example, BW Heywang, "Amorphous and polycrystalline semiconductors", Springer Verlag, Berlin, Heidelberg, New York, Tokyo 1984, page 64). This increases the absorption of light. The series connection increases the open circuit voltage of the arrangement. Such an arrangement, consisting of two one above the other there is stacked solar cells, is commonly called tandem cell and z. B. from J. Yang, Intern. Conf. on Stability of a-Si Alloy Mat. and Devices, 28-30. Jan. 87, Palo Alto. California, pp. 295-303.

Um das Spektrum des einfallenden Lichts besser auszunutzen, werden in einer Tandemzelle zwei Solarzellen kombiniert, die das Licht in unterschiedlichen Wellenlängenbereichen absorbieren (siehe z. B. J. Yang, Intern. Conf. on Stability of a-Si Alloy Mat. and Devices, 28.-30. Jan. 87, Palo Alto. California, S. 295-303). Die unterschiedliche Wellenlängenempfindlichkeit wird dabei durch unterschied­liche Zusätze zum amorphen Silizium der i-Schicht wie z. B. Kohlenstoff, Germanium oder Fluor erzielt.In order to better utilize the spectrum of the incident light, two solar cells are combined in a tandem cell that absorb the light in different wavelength ranges (see e.g. JJ Yang, Intern. Conf. On Stability of a-Si Alloy Mat. And Devices, 28.- Jan. 30, 87, Palo Alto. California, pp. 295-303). The different wavelength sensitivity is due to different additives to the amorphous silicon of the i-layer such. B. carbon, germanium or fluorine.

Dabei ergibt sich die Schwierigkeit, die elektrischen Werte der beiden übereinanderliegenden, in Serie geschalteten Zellen anzupassen. In der Serienschaltung ist die Gesamt­spannung der Tandemzelle der Anordnung die Summe der Einzelspannungen. Bei der Tandemzelle muß der Strom in beiden einzelnen Solarzellen gleich sein, wenn Verluste vermieden werden sollen. Die Anpassung der elektrischen Werte erfolgt z. B. durch Anpassung der Dicken der beiden i-Schichten.The difficulty arises in adapting the electrical values of the two cells one above the other, connected in series. In the series connection, the total voltage of the tandem cell of the arrangement is the sum of the individual voltages. With the tandem cell, the current in both individual solar cells must be the same if losses are to be avoided. The electrical values are adjusted e.g. B. by adjusting the thicknesses of the two i-layers.

Eine andere Möglichkeit (s. z. B. C. Eberspacher et al., 18th IEEE, Las Vegas 1985, S. 1031-1035) besteht darin, die beiden Solarzellen völlig isoliert, z. B. auf verschiedenen Seiten eines Substrates oder auf zwei Substraten, zu er­zeugen. Jede Solarzelle ist dann mit zwei Kontakten ver­sehen, die unabhängig verschaltet werden können. Das Auf­bringen der Solarzellen auf den verschiedenen Seiten des Substrats ist umständlich und erfordert erhöhte Sorgfalt. Die Verschaltung der Solarzellen ist durch die vielen einzelnen Kontakte sehr arbeitsintensiv.Another possibility (see, e.g., C. Eberspacher et al., 18th IEEE, Las Vegas 1985, pp. 1031-1035) is to isolate the two solar cells completely, e.g. B. on different sides of a substrate or on two substrates. Each solar cell is then provided with two contacts that can be connected independently. The application of the solar cells on the different sides of the substrate is cumbersome and requires increased care. The interconnection of the solar cells is very labor intensive due to the many individual contacts.

Der Erfindung liegt die Aufgabe zugrunde, eine Dünnschicht­ solarzellenanordnung anzugeben, die stabil im Bezug auf Alterung ist, die einfach zu konzipieren ist, die für Modulbauweise geeignet ist und die großtechnisch einfach herstellbar ist.The invention has for its object a thin layer Specify solar cell arrangement that is stable with respect to aging, that is easy to design, that is suitable for modular construction and that is easy to manufacture on an industrial scale.

Die Aufgabe wird in einer Dünnschichtsolarzellenanordnung der eingangs genannten Art dadurch gelöst, daß die Solar­zellen paarweise so zueinander angeordnet sind, daß benachbarte Schichten der ersten Solarzelle und der zweiten Solarzellen vom selben Leitfähigkeitstyp sind und daß die p-Schichten der ersten Solarzelle und der zweiten Solar­zelle sowie die n-Schichten der ersten Solarzelle und der zweiten Solarzelle in Art einer Parallelschaltung elektrisch miteinander verbunden sind.The object is achieved in a thin-film solar cell arrangement of the type mentioned at the outset in that the solar cells are arranged in pairs in relation to one another in such a way that adjacent layers of the first solar cell and the second solar cells are of the same conductivity type and that the p-layers of the first solar cell and the second solar cell and the n layers of the first solar cell and the second solar cell are electrically connected to one another in the manner of a parallel connection.

Diese Anordnung hat den Vorteil einer erhöhten Stabilität in Bezug auf das Alterungsverhalten, da die Schichten dünn sein können (≦ 0.2 µm). Die elektrischen Spannungen an den beiden Solarzellen sind gleich groß. Die Verschaltung der beiden Solarzellen entspricht einer Parallelschaltung. Die Ströme in den Zellen können daher beliebig sein, ohne den Wirkungsgrad der Anordnung zu verringern. Die Anpassung zweier Zellen in einer solchen Anordnung ist daher sehr einfach.This arrangement has the advantage of increased stability with regard to aging behavior, since the layers can be thin (≦ 0.2 µm). The electrical voltages on the two solar cells are the same. The connection of the two solar cells corresponds to a parallel connection. The currents in the cells can therefore be arbitrary without reducing the efficiency of the arrangement. The adaptation of two cells in such an arrangement is therefore very simple.

Um das Spektrum des einfallenden Lichts besser auszu­nutzen, wird für die intrinsischen i-Schichten der ersten Solarzelle und der zweiten Solarzelle intrinsisches Halb­leitermaterial mit unterschiedlichen Zusätzen, die das Licht in unterschiedlichen Wellenlängenbereichen absorbieren, verwendet. Sind die i-Schichten z. B. auf der Basis von hydrogenisiertem amorphem Silizium vorgesehen, eignen sich beispielsweise Kohlenstoff, Germanium oder Fluor als Zusatz.In order to make better use of the spectrum of the incident light, intrinsic semiconductor material with different additives that absorb the light in different wavelength ranges is used for the intrinsic i-layers of the first solar cell and the second solar cell. Are the i layers z. B. provided on the basis of hydrogenated amorphous silicon, for example carbon, germanium or fluorine are suitable as an additive.

Es kann vorteilhaft sein, die benachbarten Schichten der ersten Solarzelle und der zweiten Solarzelle als Doppel­schicht auszubilden. Dies ist z. B. der Fall, wenn die zweite Solarzelle in einer anderen Anlage hergestellt werden soll als die erste. Bei der Verwendung unterschied­licher Materialien in den beiden Solarzellen können eventuelle Schwierigkeiten dadurch vermieden werden, daß zwischen den benachbarten Schichten eine Isolationsschicht vorgesehen wird. Die Anordnung hat dann vier Anschlüsse.It may be advantageous to design the adjacent layers of the first solar cell and the second solar cell as a double layer. This is e.g. B. the case when the second solar cell to be manufactured in a different plant than the first. If different materials are used in the two solar cells, possible difficulties can be avoided by providing an insulation layer between the adjacent layers. The arrangement then has four connections.

Ein sehr einfacher Aufbau der Anordnung wird dadurch er­zielt, daß die benachbarten Schichten der ersten Solar­zelle und der zweiten Solarzelle, die erfindungsgemäß vom selben Leitfähigkeitstyp sind, als eine einzige gemeinsame Schicht ausgebildet sind.A very simple construction of the arrangement is achieved in that the adjacent layers of the first solar cell and the second solar cell, which according to the invention are of the same conductivity type, are formed as a single common layer.

Die Stromableitung der gemeinsamen Schicht wird dadurch verbessert, daß auf der gemeinsamen Schicht ein Grid aus transparentem elektrisch leitfähigem Material, z. B. ITO (= Indium-Zinn-Oxid), vorgesehen ist.The current dissipation of the common layer is improved in that a grid made of transparent electrically conductive material, for. B. ITO (= indium tin oxide) is provided.

Zur Kontaktierung der Solarzellenanordnung mit i-Schichten auf der Basis von amorphem Silizium müssen Kontaktschichten jeweils auf der, der gemeinsamen Schicht abgewandten Ober­fläche der Schichtenfolge der Solarzellen vorgesehen werden. Mindestens eine dieser Kontaktschichten, durch die der Lichteinfall erfolgt, besteht dabei aus transparentem elektrisch leitfähigem Material. Die Kontaktierung über Kontaktschichten führt zu einer guten Stromableitung. Das Aufbringen von Kontaktschichten ist im Herstellprozeß technologisch einfacher als das Montieren einzelner Elektroden.To contact the solar cell arrangement with i-layers based on amorphous silicon, contact layers must be provided on the surface of the layer sequence of the solar cells facing away from the common layer. At least one of these contact layers, through which the incidence of light occurs, consists of transparent, electrically conductive material. Contacting via contact layers leads to good current dissipation. The application of contact layers is technologically simpler in the manufacturing process than the mounting of individual electrodes.

Bestehen beide Kontaktschichten aus transparentem, elektrisch leitfähigem Material, kann der Lichteinfall von beiden Seiten der Solarzellenanordnung genutzt werden.If both contact layers consist of transparent, electrically conductive material, the incidence of light can be used from both sides of the solar cell arrangement.

Dadurch kann das Licht, das in der Dünnschichtsolarzellen­anordnung nicht absorbiert wurde und das an der Fläche hinter der Dünnschichtsolarzellenanordnung zurück in die Dünnschichtsolarzellenanordnung reflektiert wird, weiter zur Stromerzeugung genutzt werden (sogenannte bifacial-­cells, s. z. B. A. Pantoja-Lopez, J. Garcia Martin, 7. EPSEC, Sevilla/Spanien 1986, S. 137-141)As a result, the light that was not absorbed in the thin-film solar cell arrangement and that is reflected on the surface behind the thin-film solar cell arrangement back into the thin-film solar cell arrangement can continue used to generate electricity (so-called bifacial cells, see BA Pantoja-Lopez, J. Garcia Martin, 7th EPSEC, Sevilla / Spain 1986, pp. 137-141)

Technologisch einfach ist es, die Parallelverschaltung der beiden Solarzellen in jeder Tandemzelle zusammen mit der Serienverschaltung im Modulaufbau vorzusehen.It is technologically simple to provide the parallel connection of the two solar cells in each tandem cell together with the series connection in the module structure.

Technologisch günstig ist es, die Dünnschichtsolarzellen­anordnung in einem Schichtaufbau vorzusehen. Der Schicht­aufbau weist eine Schichtenfolge von einer ersten p-leitenden, einer ersten intrinsischen, einer gemeinsamen n-leitenden, einer zweiten intrinsischen und einer zweiten p-leitenden Schicht auf. Der ersten p-leitenden Schicht und der zweiten p-leitenden Schicht ist jeweils eine Kontaktschicht benachbart. Die einzelnen Tandemzellen werden im Schichtaufbau durch Gräben voneinander getrennt. Die Flanken der Gräben, die senkrecht zum Schichtaufbau verlaufen, sind so mit je einer strukturierten Isolator­schicht bedeckt, daß an der einen Flanke die gemeinsame n-leitende Schicht offenliegt und daß an der anderen, gegenüberliegenden Flanke die beiden Kontaktschichten offenliegen. Der Graben ist mit einem elektrisch leit­fähigen Material aufgefüllt. Durch die Strukturierung der Isolatorschichten wird durch das leitfähige Material die gemeinsame n-leitende Schicht der einen Tandemzelle mit den Kontaktschichten und damit mit den p-leitenden Schichten der darauffolgenden Tandemzelle elektrisch verbunden.It is technologically favorable to provide the thin-film solar cell arrangement in a layer structure. The layer structure has a layer sequence of a first p-type, a first intrinsic, a common n-type, a second intrinsic and a second p-type layer. A contact layer is adjacent to the first p-type layer and the second p-type layer. The individual tandem cells are separated from one another in the layer structure by trenches. The flanks of the trenches, which run perpendicular to the layer structure, are each covered with a structured insulator layer in such a way that the common n-conducting layer is exposed on one flank and that the two contact layers are exposed on the other, opposite flank. The trench is filled with an electrically conductive material. The structuring of the insulator layers electrically connects the common n-conducting layer of the one tandem cell to the contact layers and thus to the p-conducting layers of the subsequent tandem cell.

Die Strukturierung der Isolatorschichten wird z. B. dadurch erreicht, daß in die Flanken des Grabens Stufen geätzt werden. An der Oberfläche der Stufen befinden sich die gemeinsame n-leitende Schicht bzw. die Kontaktschicht. Die Stufen werden beispielsweise durch selektives Ätzen erzeugt. Dazu ist es vorteilhaft, die n-leitenden oder p-leitenden Schichten aus mikrokristallinem Silizium vorzusehen.The structuring of the insulator layers is such. B. achieved by etching steps in the flanks of the trench. The common n-type layer or the contact layer are located on the surface of the steps. The steps are created, for example, by selective etching. For this purpose, it is advantageous to provide the n-type or p-type layers made of microcrystalline silicon.

Die erfindungswesentlichen Merkmale können selbstver­ständlich auch in einem Schichtaufbau mit einer Schicht­folge mit einer n-leitenden, einer intrinsischen, einer gemeinsamen p-leitenden, einer intrinsischen und einer n-leitenden Schicht realisiert sein.The features essential to the invention can of course also be implemented in a layer structure with a layer sequence with an n-conducting, an intrinsic, a common p-conducting, an intrinsic and an n-conducting layer.

Im folgenden wird die Erfindung anhand eines Ausführungs­beispiels und den FIG näher erläutert.

  • In FIG 1 ist eine Tandemzelle dargestellt.
  • FIG 2 zeigt schematisch den Potentialverlauf in einer Tandemzelle.
  • FIG 3 zeigt zwei in Serie verschaltete Solarzellen.
In the following the invention is explained in more detail using an exemplary embodiment and the FIG.
  • 1 shows a tandem cell.
  • 2 shows schematically the potential curve in a tandem cell.
  • 3 shows two solar cells connected in series.

Für gleiche Teile gelten in den Figuren gleiche Bezugs­zeichnen.The same reference numerals apply to the same parts in the figures.

In FIG 1 ist eine Tandemzelle dargestellt. Auf einem Substrat 1 aus z. B. Glas ist eine erste Kontaktschicht 2, eine erste p-Schicht 3, eine erste i-Schicht 4, eine gemeinsame n-Schicht 5, eine zweite i-Schicht 6, eine zweite p-Schicht 7 und eine zweite Kontaktschicht 8 vor­gesehen. Die erste Kontaktschicht 2 und die zweite Kontakt­schicht 8 bestehen aus einem transparentem leitfähigem Material z. B. aus dotiertem SnO₂. Die erste p-Schicht 3 und die zweite p-Schicht 7 bestehen aus amorphem Silizium und sind durch Dotierung mit Bor p-leitend. Die erste i-Schicht 4 und die zweite i-Schicht 6 sind intrinsische Schichten. Die erste i-Schicht 4 besteht aus amorphem Silizium-Germanium. Die zweite i-Schicht 6 besteht aus amorphem Silizium. Die gemeinsame n-Schicht 5 besteht z. B. aus mikrokristallinem Silizium und ist durch Dotierung mit Phosphor n-leitend. Die Schichten haben folgende Dicken: erste p-Schicht 3: 15 bis 20 nm, erste i-Schicht 4: 100 bis 250 nm, gemeinsame n-Schicht 5: 20 bis 40 nm, zweite i-Schicht 6: 300 bis 700 nm, zweite p-Schicht 7: 15 bis 20 nm.1 shows a tandem cell. On a substrate 1 from z. B. Glass is provided with a first contact layer 2, a first p-layer 3, a first i-layer 4, a common n-layer 5, a second i-layer 6, a second p-layer 7 and a second contact layer 8. The first contact layer 2 and the second contact layer 8 consist of a transparent conductive material z. B. from doped SnO₂. The first p-layer 3 and the second p-layer 7 consist of amorphous silicon and are p-conductive by doping with boron. The first i-layer 4 and the second i-layer 6 are intrinsic layers. The first i-layer 4 consists of amorphous silicon germanium. The second i-layer 6 consists of amorphous silicon. The common n-layer 5 consists, for. B. made of microcrystalline silicon and is n-conductive by doping with phosphorus. The layers have the following thicknesses: first p-layer 3: 15 to 20 nm, first i-layer 4: 100 to 250 nm, common n-layer 5: 20 to 40 nm, second i-layer 6: 300 to 700 nm, second p-layer 7: 15 to 20 nm.

Im Betrieb der Tandemzelle in FIG 1 wird von der Seite der zweiten Kontaktschicht 8 her Licht, angedeutet als Pfeile 9, in die Tandemzelle eingestrahlt. Das Licht wird zum Teil in der ersten i-Schicht 4, zum Teil in der zweiten i-Schicht 6 absorbiert. Dabei werden Ladungsträger 10 erzeugt. Durch das elektrische Feld werden die Ladungs­träger entsprechend ihrer Polarität zur gemeinsamen n-Schicht 5 bzw. zur ersten p-Schicht 3 oder zweiten p-Schicht 7 gezogen. Die gemeinsame n-Schicht 5 ist über einen Verbraucher 11 mit der ersten p-Schicht 3 und mit der zweiten p-Schicht 7 elektrisch verbunden.During operation of the tandem cell in FIG. 1, light, indicated as arrows 9, is radiated into the tandem cell from the side of the second contact layer 8. The light is partly absorbed in the first i-layer 4 and partly in the second i-layer 6. Charge carriers 10 are generated in the process. The charge carriers are drawn according to their polarity to the common n-layer 5 or to the first p-layer 3 or second p-layer 7 by the electric field. The common n-layer 5 is electrically connected to the first p-layer 3 and to the second p-layer 7 via a consumer 11.

In FIG 2 ist schematisch der Potentialverlauf in der Tandemzelle dargestellt entlang einem Schnitt, der senk­recht zur Schichtenfolge in FIG 1 verläuft. Die FIG 2 zeigt weiterhin, wie der Ladungstransport durch Elektronen und Löcher erfolgt.FIG. 2 schematically shows the potential curve in the tandem cell along a section that runs perpendicular to the layer sequence in FIG. 1. FIG. 2 also shows how the charge is transported through electrons and holes.

In FIG 3 sind zwei in Serie geschaltete Tandemzellen dar­gestellt, die in einem Schichtaufbau 12 enthalten sind. Der Schichtaufbau 12 enthält das Substrat 1, die erste Kontakt­schicht 2, die erste p-Schicht 3, die erste i-Schicht 4, die gemeinsame n-Schicht 5, die zweite i-Schicht 6, die zweite p-Schicht 7 und die zweite Kontaktschicht 8. In dem Schichtaufbau 12 sind eine erste Tandemzelle 13 und eine zweite Tandemzelle 14 durch einen Graben 15 getrennt. Der Graben 15 verläuft senkrecht zur Schichtenfolge bis auf das Substrat 1. Eine erste Flanke 16 des Grabens 15 weist eine erste Stufe 17 auf. Die erste Flanke 16 begrenzt die erste Tandemzelle 13. Die erste Stufe 17 verläuft entlang der Oberfläche der gemeinsamen n-Schicht 5. Eine zweite Flanke 18 des Grabens 15, die der ersten Flanke 16 gegenüber­liegt und die die zweite Tandemzelle 14 begrenzt, weist eine zweite Stufe 19 auf. Die zweite Stufe 19 verläuft an der Oberfläche der ersten Kontaktschicht 2. Die erste Flanke 16 und die zweite Flanke 18 sind mit je einer struk­turierten Isolatorschicht 20 bedeckt. Die Isolatorschichten 20 sind so strukturiert, daß an der ersten Flanke 16 alle Schichten bedeckt sind bis auf die gemeinsame n-Schicht 5 und daß an der zweiten Flanke 18 alle Schichten bedeckt sind bis auf die erste Kontaktschicht 2 und die zweite Kontaktschicht 8. Der Graben 15 ist mit elektrisch leit­fähigem Material 21 aufgefüllt. Durch die Strukturierung der Isolatorschichten 20 verbindet das elektrisch leit­fähige Material 21 die gemeinsame n-Schicht 5 an der ersten Flanke 16 mit der ersten Kontaktschicht 2 und der zweiten Kontaktschicht 8 an der zweiten Flanke 18. Dadurch ist die gemeinsame n-Schicht 5 der ersten Tandemzelle 13 elektrisch mit der ersten p-Schicht 3 und der zweiten p-Schicht 7 der zweiten Tandemzelle 14 verbunden.3 shows two tandem cells connected in series, which are contained in a layer structure 12. The layer structure 12 contains the substrate 1, the first contact layer 2, the first p-layer 3, the first i-layer 4, the common n-layer 5, the second i-layer 6, the second p-layer 7 and the second Contact layer 8. In the layer structure 12, a first tandem cell 13 and a second tandem cell 14 are separated by a trench 15. The trench 15 runs perpendicular to the layer sequence down to the substrate 1. A first flank 16 of the trench 15 has a first step 17. The first flank 16 delimits the first tandem cell 13. The first step 17 runs along the surface of the common n-layer 5. A second flank 18 of the trench 15, which lies opposite the first flank 16 and which delimits the second tandem cell 14, has a second one Level 19 on. The second step 19 runs on the surface of the first contact layer 2. The first flank 16 and the second flank 18 are each covered with a structured insulator layer 20. The insulator layers 20 are structured such that on the first flank 16 all layers are covered except for the common n-layer 5 and that on the second flank 18 all layers are covered except for the first contact layer 2 and the second contact layer 8. The trench 15 is filled with electrically conductive material 21. By structuring the insulator layers 20, the electrically conductive material 21 connects the common n-layer 5 on the first flank 16 to the first contact layer 2 and the second contact layer 8 on the second flank 18. As a result, the common n-layer 5 is the first tandem cell 13 electrically connected to the first p-layer 3 and the second p-layer 7 of the second tandem cell 14.

Durch eine vielfache Wiederholung der anhand FIG 3 erläuterten Verbindung zwischen zwei Tandemzellen ist in einem Modul mit vielen Tandemzellen gewährleistet, daß die Tandemzellen seriell verschaltet sind und gleichzeitig die in den Tandemzellen enthaltenen Solarzellen parallel verschaltet sind.A multiple repetition of the connection between two tandem cells explained in FIG. 3 ensures in a module with many tandem cells that the tandem cells are connected in series and at the same time the solar cells contained in the tandem cells are connected in parallel.

Claims (13)

1. Dünnschichtsolarzellenanordnung mit mindestens einer ersten Solarzelle und einer zweiten Solarzelle vom pin- oder nip-Typ, die als Tandemzelle zueinander angeordnet sind, die jeweils eine p-leitende p-Schicht, eine intrinsische i-Schicht, eine n-leitende n-Schicht und Kontaktschichten bzw. elektrische Kontaktierungen auf­weisen, geeignet für Modulbauweise mit Serienverschaltung, gekennzeichnet durch folgende Merkmale: a) die Solarzellen sind so zueinander angeordnet, daß benachbarte Schichten (5) der ersten Solarzelle und der zweiten Solarzelle vom selben Leitfähigkeitstyp sind, b) die p-Schichten (3, 7) der ersten Solarzelle und der zweiten Solarzelle sowie die n-Schichten (5) der ersten Solarzelle und der zweiten Solarzelle sind in Art einer Parallelschaltung elektrisch miteinander verbunden. 1. Thin-film solar cell arrangement with at least a first solar cell and a second solar cell of the pin or nip type, which are arranged as a tandem cell to one another, each having a p-type p-layer, an intrinsic i-layer, an n-type n-layer and have contact layers or electrical contacts, suitable for modular construction with series connection, characterized by the following features: a) the solar cells are arranged with respect to one another in such a way that adjacent layers (5) of the first solar cell and the second solar cell are of the same conductivity type, b) the p-layers (3, 7) of the first solar cell and the second solar cell and the n-layers (5) of the first solar cell and the second solar cell are electrically connected to one another in the manner of a parallel connection. 2. Dünnschichtsolarzellenanordnung nach Anspruch 1, dadurch gekennzeichnet, daß die i-Schicht (4) der ersten Solarzelle und die i-Schicht (6) der zweiten Solar­zelle aus unterschiedlichen intrinsischen Halbleiterma­terialen, die das Licht in unterschiedlichen Wellenlängen­bereichen absorbieren, bestehen.2. Thin-film solar cell arrangement according to claim 1, characterized in that the i-layer (4) of the first solar cell and the i-layer (6) of the second solar cell consist of different intrinsic semiconductor materials that absorb the light in different wavelength ranges. 3. Dünnschichtsolarzellenanordnung nach Anspruch 1 oder Anspruch 2, dadurch gekennzeichnet, daß die i-Schichten (4, 6) der ersten Solarzelle und der zweiten Solarzelle auf der Basis von amorphem Silizium vorgesehen sind, daß zur Kontaktierung der ersten Solar­zelle und der zweiten Solarzelle jeweils auf der der gemeinsamen Schicht abgewandten Oberfläche der Schichten­folge eine Kontaktschicht (2, 8) aus elektrisch leit­fähigem Material vorgesehen ist und mindestens die dem Licht zugewandte Kontaktschicht (8) aus transparentem Material besteht.3. Thin-film solar cell arrangement according to claim 1 or claim 2, characterized in that the i-layers (4, 6) of the first solar cell and the second solar cell are provided on the basis of amorphous silicon, that for contacting the first solar cell and the second solar cell in each case a contact layer (2, 8) made of electrically conductive material is provided on the surface of the layer sequence facing away from the common layer and at least the contact layer (8) facing the light consists of transparent material. 4. Dünnschichtsolarzellenanordnung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß mindestens eine der n-Schichten (5) und der p-Schichten (3, 7) aus mikrokristallinem Silizium vorge­sehen ist.4. Thin-film solar cell arrangement according to one of claims 1 to 3, characterized in that at least one of the n-layers (5) and the p-layers (3, 7) made of microcrystalline silicon is provided. 5. Dünnschichtsolarzellenanordnung nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß zwischen den benachbarten Schichten der ersten Solarzelle und der zweiten Solarzelle eine isolierende Schicht vorge­sehen ist.5. Thin-film solar cell arrangement according to one of claims 1 to 4, characterized in that an insulating layer is provided between the adjacent layers of the first solar cell and the second solar cell. 6. Dünnschichtsolarzellenanordnung nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß die benachbarten Schichten der ersten Solarzelle und der zweiten Solarzelle als eine einzige gemeinsame Schicht (5) vorgesehen sind.6. Thin-film solar cell arrangement according to one of claims 1 to 4, characterized in that the adjacent layers of the first solar cell and the second solar cell are provided as a single common layer (5). 7. Dünnschichtsolarzellenanordnung nach Anspruch 6, dadurch gekennzeichnet, daß zur Unter­stützung der Stromableitung auf der gemeinsamen Schicht (5) ein Grid aus transparentem leitfähigen Material vorgesehen ist.7. Thin-film solar cell arrangement according to claim 6, characterized in that a grid made of transparent conductive material is provided to support the current dissipation on the common layer (5). 8. Dünnschichtsolarzellenanordnung, die mehrere in Serie verschaltete Tandemzellen nach einem der Ansprüche 1 bis 7 enthält, dadurch gekennzeichnet, daß die Parallelverschaltung jeweils der ersten Solarzelle und der zweiten Solarzelle in jeder Tandemzelle (13, 14) zusammen mit der Serienverschaltung vorgesehen ist.8. Thin-film solar cell arrangement which contains a plurality of tandem cells connected in series according to one of claims 1 to 7, characterized in that the parallel connection of the first solar cell and the second solar cell in each tandem cell (13, 14) is provided together with the series connection. 9. Dünnschichtsolarzellenanordnung nach Anspruch 8, gekennzeichnet durch folgende Merkmale: a) die Tandemzellen (13, 14) sind in einem Schichtaufbau (12) enthalten, b) im Schichtaufbau (12) sind Gräben (15) vorgesehen, die die einzelnen Tandemzellen (13,14) voneinander trennen, c) die Gräben (15), die senkrecht zu den Schichten ver­laufen, weisen jeweils an einer ersten Flanke (16) des Grabens (15) eine erste Stufe (17) auf, an deren Oberfläche die gemeinsame Schicht (5) liegt, d) die erste Flanke (16) des Grabens (15) ist mit einer Isolatorschicht (20) bedeckt, die so strukturiert ist, daß sie die Oberfläche der ersten Stufe (17) unbedeckt läßt, aber alle anderen Schichten (2, 3, 4, 6, 7, 8) be­deckt, e) die Gräben (15) weisen jeweils an einer zweiten Flanke (18), die der ersten Flanke (16) gegenüberliegt, eine zweite Stufe (19) auf, an deren Oberfläche die der Ober­fläche des Schichtaufbaus (12) abgewandte Kontaktschicht (2) liegt, f) die zweite Flanke (19) des Grabens (15) ist mit einer Isolatorschicht (20) bedeckt, die so strukturiert ist, daß die Kontaktschichten (2, 8) unbedeckt sind, aber alle anderen Schichten (3, 4, 5, 6, 7) bedeckt sind, g) die Gräben (15) sind mit einem elektrisch leitfähigen Material (21) aufgefüllt. 9. Thin-film solar cell arrangement according to claim 8, characterized by the following features: a) the tandem cells (13, 14) are contained in a layer structure (12), b) in the layer structure (12), trenches (15) are provided which separate the individual tandem cells (13, 14) from one another, c) the trenches (15), which run perpendicular to the layers, each have a first step (17) on a first flank (16) of the trench (15), on the surface of which the common layer (5) lies, d) the first flank (16) of the trench (15) is covered with an insulator layer (20) which is structured in such a way that it leaves the surface of the first stage (17) uncovered, but all other layers (2, 3, 4 , 6, 7, 8) covered, e) the trenches (15) each have a second step (19) on a second flank (18) opposite the first flank (16), on the surface of which the contact layer (2) facing away from the surface of the layer structure (12) lies, f) the second flank (19) of the trench (15) is covered with an insulator layer (20) which is structured in such a way that the contact layers (2, 8) are uncovered, but all other layers (3, 4, 5, 6 , 7) are covered, g) the trenches (15) are filled with an electrically conductive material (21). 10. Dünnschichtsolarzellenanordnung nach Anspruch 9, dadurch gekennzeichnet, daß anstelle der Isolatorschichten (20) eine die Kontaktschichten (2, 8) enthaltende Struktur vorgesehen ist, die so ausgebildet ist, daß ein Kurzschluß zwischen der gemeinsamen Schicht (5) und jeweils einer der Kontaktschichten (2, 8) über das elektrisch leitfähige Material (21) verhindert wird.10. Thin-film solar cell arrangement according to claim 9, characterized in that instead of the insulator layers (20) a contact layers (2, 8) containing structure is provided, which is designed such that a short circuit between the common layer (5) and each one of the contact layers (2, 8) is prevented via the electrically conductive material (21). 11. Dünnschichtsolarzellenanordnung nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, daß beide Kontaktschichten (2, 8) aus transparentem elektrisch leitfähigem Material bestehen.11. Thin-film solar cell arrangement according to one of claims 1 to 10, characterized in that both contact layers (2, 8) consist of transparent, electrically conductive material. 12. Verwendung einer Dünnschichtsolarzellenanordnung nach Anspruch 11 in einem Modul, wobei der Lichteinfall von beiden Seiten genutzt wird.12. Use of a thin-film solar cell arrangement according to claim 11 in a module, wherein the incidence of light is used from both sides. 13. Verwendung einer Dünnschichtsolarzellenanordnung nach Anspruch 11 in einem Modul, das vor einem reflektierenden Hintergrund aufgebaut ist, wobei nicht absorbiertes Licht am Hintergrund reflektiert wird und nochmals die Dünn­schichtsolarzellenanordnung durchstrahlt.13. Use of a thin-film solar cell arrangement according to claim 11 in a module that is constructed against a reflective background, wherein non-absorbed light is reflected on the background and shines through the thin-film solar cell arrangement again.
EP89100808A 1988-02-05 1989-01-18 Thin film solar cell array Expired - Lifetime EP0326857B1 (en)

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