EP0262440A2 - Procédé de fabrication d'un guide d'onde en ruban sous forme d'une hétérostructure de couches épitactiques - Google Patents

Procédé de fabrication d'un guide d'onde en ruban sous forme d'une hétérostructure de couches épitactiques Download PDF

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Publication number
EP0262440A2
EP0262440A2 EP87112828A EP87112828A EP0262440A2 EP 0262440 A2 EP0262440 A2 EP 0262440A2 EP 87112828 A EP87112828 A EP 87112828A EP 87112828 A EP87112828 A EP 87112828A EP 0262440 A2 EP0262440 A2 EP 0262440A2
Authority
EP
European Patent Office
Prior art keywords
layer
melt
strip
removal
lateral boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP87112828A
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German (de)
English (en)
Other versions
EP0262440A3 (fr
Inventor
Jochen Dr. Heinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0262440A2 publication Critical patent/EP0262440A2/fr
Publication of EP0262440A3 publication Critical patent/EP0262440A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/029—Differential crystal growth rates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/066—Gp III-V liquid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/108—Melt back
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/955—Melt-back

Definitions

  • the present invention relates to a method for producing a strip waveguide according to the preamble of patent claim 1.
  • An example of a method of the type mentioned is a method of manufacturing a semiconductor laser in the form of a stripe laser with BH-layer structure (BH stands for "B urried etero H"), in which the laser-active zone is a buried zone.
  • the method is usually carried out by etching a raised strip corresponding to the width of the strip laser into an epitaxial wafer with a double hetero-layer structure.
  • the lateral boundary surfaces of the strip - often with multiple layers for better current blocking - are overgrown with InP.
  • a remelting or dissolving method is already known in which the lateral boundary surfaces of the strip are dissolved by removal melt in the form of undersaturated melts.
  • the dissolving or remelting takes place only very briefly, for example 2 seconds with In, P melt or with an In, As melt, in order to prevent the laser-active layer of the strip laser from being over-dissolved.
  • the lateral boundary surfaces of the strip remain essentially flat.
  • the removal melt is pushed off and then a growth melt is pushed on to grow an epitaxial layer which overgrows the lateral boundary surfaces of the strip.
  • these lateral boundary surfaces are exposed and exposed to chemicals and / or atmospheres, for example the atmosphere of the process reactor. This reduces the quality of the lateral interface between the strips and the subsequently grown epitaxial layer. This reduced quality causes imperfect lateral heterojunctions, which are the cause of aging mechanisms, which are shown by semiconductor lasers with a BH layer structure in which the laser-active zone is a buried zone.
  • the object of the invention is to improve a method of the type mentioned in such a way that the lateral boundary surfaces are never exposed to a harmful atmosphere and / or chemicals.
  • a preferred and advantageous embodiment of the method according to the invention is specified in claim 2. It makes use of the fact that in the liquid phase epitaxy of layer structures made of materials of different compositions, for example the double heterostructure of a semiconductor laser, not only does the growth rate for different semiconductor compositions differ in general when the system cools down, but also in the presence of undersaturated melts or when the temperature rises also the dissolving or remelting speed is generally different for different compositions of the semiconductor layers.
  • the dissolving or remelting effect is used in such a way that when a raised strip is attacked from the side Hetero-layer structure due to the attack of removal melts, a certain layer is removed more strongly on both sides than the adjacent layers.
  • the method according to claim 2 can be carried out as specified in claim 3. However, it is particularly advantageous to carry out this method as claimed in claim 4.
  • a preferred embodiment of the method according to the invention can be seen from claim 5.
  • the method variants according to claim 6 or 7 are suitable for producing quaternary lasers with a double heterostructure in which the laser-active layer consists of InGaAsP and the adjacent layers consist of InP.
  • the laser-active layer is removed more strongly on both sides than the adjacent layers.
  • a raised stripe is first placed in the doubles hetero-layer structure etched up to the specific layer 2 (FIG. 2a).
  • the width b1 of the strip 1 is selected to be greater than the width b2 of the strip laser to be used later.
  • a removal melt is pushed on, the exposure time of which is chosen to be so great that an edge region 5 of the layer 2, in which the material of this layer is dissolved, between undissolved sections from above and below forth to the layer 2 adjacent solid layers 3 and 4 of the double hetero-layer structure is present.
  • option iii) is particularly suitable, in which after the jump in temperature the melting process proceeds to saturation and then turns into a growth process by subsequently lowering the temperature.
  • a method described here is suitable not only for the production of strip lasers, but generally for the production of strip waveguides with a hetero-layer structure, in which the waveguiding region has lateral boundary surfaces of good quality.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP19870112828 1986-09-29 1987-09-02 Procédé de fabrication d'un guide d'onde en ruban sous forme d'une hétérostructure de couches épitactiques Withdrawn EP0262440A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3633079 1986-09-29
DE3633079 1986-09-29

Publications (2)

Publication Number Publication Date
EP0262440A2 true EP0262440A2 (fr) 1988-04-06
EP0262440A3 EP0262440A3 (fr) 1991-02-27

Family

ID=6310610

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19870112828 Withdrawn EP0262440A3 (fr) 1986-09-29 1987-09-02 Procédé de fabrication d'un guide d'onde en ruban sous forme d'une hétérostructure de couches épitactiques

Country Status (2)

Country Link
US (1) US4818722A (fr)
EP (1) EP0262440A3 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2199157B (en) * 1986-12-03 1990-08-22 Zeiss Stiftung Process for producing a planar optical waveguide

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63284878A (ja) * 1987-04-30 1988-11-22 シーメンス、アクチエンゲゼルシヤフト 埋込み活性層をもつレーザダイオードの製造方法
JPH0828498B2 (ja) * 1989-10-02 1996-03-21 株式会社東芝 半導体素子とその製造方法
US5082799A (en) * 1990-09-14 1992-01-21 Gte Laboratories Incorporated Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
US5222091A (en) * 1990-09-14 1993-06-22 Gte Laboratories Incorporated Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor
CN1142598C (zh) 1997-07-25 2004-03-17 日亚化学工业株式会社 氮化物半导体发光器件
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
WO2000052796A1 (fr) * 1999-03-04 2000-09-08 Nichia Corporation Element de laser semiconducteur au nitrure
US6947651B2 (en) * 2001-05-10 2005-09-20 Georgia Tech Research Corporation Optical waveguides formed from nano air-gap inter-layer dielectric materials and methods of fabrication thereof
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US9995875B2 (en) 2015-07-28 2018-06-12 The Penn State Research Foundation Method and apparatus for producing crystalline cladding and crystalline core optical fibers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4373989A (en) * 1981-11-30 1983-02-15 Beggs James M Administrator Of Controlled in situ etch-back
US4468850A (en) * 1982-03-29 1984-09-04 Massachusetts Institute Of Technology GaInAsP/InP Double-heterostructure lasers
US4566171A (en) * 1983-06-20 1986-01-28 At&T Bell Laboratories Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329508B2 (fr) * 1974-03-27 1978-08-21
US4110133A (en) * 1976-04-29 1978-08-29 The Post Office Growth of semiconductor compounds by liquid phase epitaxy
NL7609607A (nl) * 1976-08-30 1978-03-02 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4227962A (en) * 1979-03-12 1980-10-14 Varian Associates, Inc. Prevention of decomposition of phosphorous containing substrates during an epitaxial growth sequence
JPS5826834B2 (ja) * 1979-09-28 1983-06-06 株式会社日立製作所 半導体レ−ザ−装置
JPS5726487A (en) * 1980-07-23 1982-02-12 Hitachi Ltd Semiconductor laser device
GB2114808B (en) * 1981-12-01 1985-10-09 Standard Telephones Cables Ltd Semiconductor laser manufacture
US4464211A (en) * 1982-05-26 1984-08-07 At&T Bell Laboratories Method for selective area growth by liquid phase epitaxy
US4662983A (en) * 1982-10-26 1987-05-05 American Telephone And Telegraph Company At&T Bell Laboratories Multiple meltback procedure for LPE growth on InP
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4373989A (en) * 1981-11-30 1983-02-15 Beggs James M Administrator Of Controlled in situ etch-back
US4468850A (en) * 1982-03-29 1984-09-04 Massachusetts Institute Of Technology GaInAsP/InP Double-heterostructure lasers
US4566171A (en) * 1983-06-20 1986-01-28 At&T Bell Laboratories Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS, Band 50, Nr. 12, Dezember 1979 H. KANO et al. "Operation characteristics of buried- stripe GaIn AsP/InP DH Lasers made by melt-back method" Seiten 7934-7938 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2199157B (en) * 1986-12-03 1990-08-22 Zeiss Stiftung Process for producing a planar optical waveguide

Also Published As

Publication number Publication date
EP0262440A3 (fr) 1991-02-27
US4818722A (en) 1989-04-04

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