EP0256378A1 - Dispositif de lecture d'une image de charge bidimensionnelle - Google Patents

Dispositif de lecture d'une image de charge bidimensionnelle Download PDF

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Publication number
EP0256378A1
EP0256378A1 EP87111002A EP87111002A EP0256378A1 EP 0256378 A1 EP0256378 A1 EP 0256378A1 EP 87111002 A EP87111002 A EP 87111002A EP 87111002 A EP87111002 A EP 87111002A EP 0256378 A1 EP0256378 A1 EP 0256378A1
Authority
EP
European Patent Office
Prior art keywords
electrodes
circuit board
printed circuit
support body
fets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP87111002A
Other languages
German (de)
English (en)
Other versions
EP0256378B1 (fr
Inventor
Fritz Dipl.-Ing. Breimesser
Bernd Dr. Granz
Bertram Sachs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to AT87111002T priority Critical patent/ATE63178T1/de
Publication of EP0256378A1 publication Critical patent/EP0256378A1/fr
Application granted granted Critical
Publication of EP0256378B1 publication Critical patent/EP0256378B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0622—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface
    • B06B1/0629—Square array

Definitions

  • the invention relates to a device for reading a two-dimensional charge image, as disclosed, for example, in German Offenlegungsschrift DE-OS-32 24 026.
  • a device for reading a two-dimensional charge image which contains an array of electrodes which are arranged on the narrow sides of stacked printed circuit boards.
  • One of the flat sides of the printed circuit boards is provided with a recess running parallel to the narrow sides.
  • the recess serves to create space for the electronic components located on the adjacent plate in the stack.
  • the electrodes arranged one behind the other on the narrow side of a printed circuit board are connected via connecting conductors of approximately the same length to switchable amplifiers also arranged one behind the other in the longitudinal direction on the printed circuit board.
  • the electrodes belonging to a printed circuit board form the rows of a matrix in the stack.
  • Dual-gate MOS-FETs are provided as switchable amplifiers, the input of which is additionally protected by a bleeder resistor arranged on the printed circuit board.
  • the amplifiers located on a circuit board belong to one image line of the matrix. The outputs of these ver stronger are connected to a common output line.
  • the control inputs of the amplifiers are each connected to main control lines which are arranged on the narrow side of the printed circuit board opposite the electrodes in the direction of the columns of the matrix.
  • a common main control line is assigned to the amplifiers belonging to a column of the matrix. The charge image formed on the electrode matrix can thus be read out in columns.
  • both the thickness of the circuit board and the grid size for the electrodes are limited to values that are less than 1 mm.
  • the circuit boards are manufactured using standard hybrid technology.
  • the passive components for example the leakage resistance, are applied in thin film technology to the printed circuit board made of aluminum oxide Al2O3 and the switchable dual-gate Mos-Fets are glued onto the printed circuit board as semiconductor chips and wire-bonded.
  • this known arrangement has the disadvantage that it is only possible to determine whether a component, for example the dual-gate MOS-FET, is defective after a printed circuit board has been fitted and the bond connections have been made. If this is the case, the entire printed circuit board is unusable. Since such a printed circuit board can contain up to 200 amplifier chips, a low yield can be expected during production. An error rate in the bonding of the individual chips of, for example, only 1% would result in only one of about 8 printed circuit boards being usable on average is. In addition, if an error occurs during operation, for example due to mechanical damage to an electrode, the entire circuit board must be replaced.
  • the invention is therefore based on the object of providing a device for reading a two-dimensional charge image which can be produced with a low failure rate and which does not require the entire printed circuit board to be replaced if a single pixel fails.
  • the support bodies for the electrodes and the circuit boards associated with them are detachably connected, they can be manufactured and tested independently of one another. If, for example, an electrode on the support body becomes defective during operation, the circuit board can be separated from the support body and connected to a new tested support body.
  • the side surfaces of the support body are provided with mutually parallel conductor tracks which lead to the electrodes.
  • the printed circuit boards contain signal contact areas in the same grid dimension, so that the support body and the printed circuit boards can be soldered to one another after pre-tinning of the signal contact areas and the conductor tracks on the support body.
  • the supporting bodies consist of glass or ceramic, preferably aluminum oxide Al2O3. Dual-gate MOS-FETs are particularly suitable as switchable amplifiers.
  • the printed circuit boards and the supporting bodies for the electrodes can be manufactured independently of one another, a very thin printed circuit board, the thickness of which preferably does not exceed 0.1 mm, can be used. This makes it possible, with a grid dimension in the column direction of the matrix of up to 1.3 mm, to populate the circuit board with switchable amplifiers which are arranged in a housing.
  • the dual-gate MOS-FETs are in a SOT housing which is suitable for the assembly of printed circuit boards in SMD technology.
  • the circuit board is equipped with switchable amplifiers, which in are arranged in a housing is not possible.
  • the advantage of using housed switchable amplifiers is that the individual amplifiers can be tested prior to assembly and that there is also a significantly lower risk of damage to the MOS-FET during assembly than in the bonding process. This considerably reduces the failure rate in the manufacture of the printed circuit board.
  • the gate connections of the MOS-FETs which are each connected to an electrode are protected with a bleeder resistor which is integrated in the MOS-FET.
  • a cuboid support body 2 is provided on one of its side surfaces with, for example, square electrodes 4.
  • the support body 2 consists of an electrically insulating material, preferably of ceramic, in particular of aluminum oxide Al2O3.
  • the electrodes consist of an electrically conductive material, for example gold Au.
  • a side surface of the support body 2 which is perpendicular to the electrodes 4 and extends in the longitudinal direction is provided with mutually parallel conductor tracks 6 which touch the electrodes 4 around an edge 5.
  • the grid dimension a of the conductor tracks corresponds to the grid dimension of the electrodes 4.
  • the thickness d 1 of the support body 2 is less than 2 mm, in particular about 1.3 mm, in a preferred embodiment.
  • the side surface of the support body 2 opposite the side surface provided with conductor tracks 6 is provided in the longitudinal direction with a recess 8 which extends to the edge of the side surface facing away from the electrodes 4.
  • signal contact surfaces 12 with a grid dimension a are arranged in the longitudinal direction of a printed circuit board 10 on a flat side in its edge region.
  • This grid dimension corresponds to the grid dimension a of the conductor tracks of the support body 2 according to FIG these signal contact surfaces 12 lead signal lines 14 to switchable amplifiers.
  • the switchable amplifiers are dual-gate MOS-FETs 16, the first gate connection 162 of which is each connected to a signal contact area 12.
  • the latter is provided with switching contact areas 22, of which switching lines 18 lead to a second gate connection 164 of the dual-gate MOS-FET 16.
  • dual-gate MOS-FETs 16 are in a SOT housing and the connections to the conductor tracks are made using SMD technology.
  • the dual-gate MOS-FETs 16 are accommodated in separate SOT housings.
  • the dual-gate MOS-FETs 16 are then arranged in groups next to one another, the number of the dual-gate MOS-FETs 16 arranged in a group one below the other from the ratio between the geometric space requirement of a single dual-gate MOS-FET 16 and the grid dimension a results.
  • the dual-gate MOS-FETs 16 are arranged next to one another in groups of four.
  • the drain terminal 168 of the dual-gate MOS-FET 16 is connected to an output line 20, which leads to an output signal contact area 24 common to all dual-gate MOS-FETs 16.
  • a ground contact area 25 is also arranged on the printed circuit board 10 and is connected to the source connection 166 of the dual-gate MOS-FETs 16 via ground lines 21.
  • the output lines 20 and the ground lines 21 are located on the flat side of the printed circuit board 10, which lies opposite the component side, so that in the region of the drain connections 168 and the source connector circuits 166 of the dual-gate MOS-FET 16 vias are required.
  • the ground lines 21 are formed over a large area and, except for the area provided for the output lines 20, cover the back of the circuit board almost completely.
  • the first gate connection 162 is protected against excessive charging by means of a ground discharge resistor, which in a preferred embodiment is integrated in the MOS-FET 16.
  • the side surfaces of the support bodies 2 provided with the conductor tracks 6 each overlap with the flat side of the circuit boards 10 on which the signal contact surfaces 12 are located.
  • the resulting contact surface 26 is smaller than the corresponding side surface of the support body 2.
  • the electrodes 4 are arranged in a stack in the form of a matrix, the rows of which are each formed by the electrodes 4 located on a single support body 2.
  • the printed circuit boards 10 are soldered to the supporting body 2 on the pre-tinned signal contact surfaces 12 or conductor tracks 6.
  • the connection between the support body 2 and the printed circuit board 10 can be established and released by local heating in the area of the support surface 24.
  • the circuit board 10 can then already be equipped with the dual-gate MOS-FETs 16.
  • the thickness d3 of the circuit board 10 is slightly smaller than the thickness d2 of the recesses 8 of the support body 2, so that the support body 2 can be stacked without a space with a minimum distance between the electrodes 4.
  • the side opposite the conductor tracks 6 and the end faces of the support body 2 are provided with a conductive layer which serves as a ground.
  • a thin electrically insulating film must then be inserted in the stack.
  • the thickness d3 of the circuit boards 10 is less than 0.2 mm, in particular about 0.1 mm, in a preferred embodiment.
  • the overall height of the housing of the dual-gate MOS-FETs 16 in the SOT housing is approximately 1.1 mm, for example. This results in a minimum thickness of the support body 2, which is approximately 1.3 mm. This measure also corresponds to the image resolution in the column direction that can be achieved with this device.
  • the transducer 30 can be constructed, for example, from a coherent plate or film or from several rods.
  • the side surface of the transducer 30 opposite the electrodes 4 is provided with a conductive layer 32, which is connected to ground together with the source connection 166 of the dual-gate MOS-FET 16.
  • the charge distribution generated in the converter 30 by external influences, for example by light, pressure or temperature, can thus be read via the electrodes 4.
  • the converter 30 can be made, for example, of piezo or pyroelectric material, for example made of piezoceramic or PVDF, or of light-sensitive material, for example silicon.
  • the impedance of the bleeder resistor integrated in the MOS-FET 16 must be much larger than the impedance of the electrodes 4 against Mass which is given, for example, in the case of a piezoelectric transducer 30 for measuring ultrasonic signals essentially by its capacitance and the ultrasonic frequency.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Combinations Of Printed Boards (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
EP87111002A 1986-08-11 1987-07-29 Dispositif de lecture d'une image de charge bidimensionnelle Expired - Lifetime EP0256378B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT87111002T ATE63178T1 (de) 1986-08-11 1987-07-29 Vorrichtung zum lesen eines zweidimensionalen ladungsbildes.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3627159 1986-08-11
DE3627159 1986-08-11

Publications (2)

Publication Number Publication Date
EP0256378A1 true EP0256378A1 (fr) 1988-02-24
EP0256378B1 EP0256378B1 (fr) 1991-05-02

Family

ID=6307139

Family Applications (1)

Application Number Title Priority Date Filing Date
EP87111002A Expired - Lifetime EP0256378B1 (fr) 1986-08-11 1987-07-29 Dispositif de lecture d'une image de charge bidimensionnelle

Country Status (5)

Country Link
US (1) US4742494A (fr)
EP (1) EP0256378B1 (fr)
JP (1) JPS6358178A (fr)
AT (1) ATE63178T1 (fr)
DE (1) DE3769724D1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0625379A2 (fr) * 1993-05-17 1994-11-23 Hewlett-Packard Company Dispositif pour conditionner et interconnecter des signaux pour un transducteur acoustique
EP0637470A2 (fr) * 1993-08-05 1995-02-08 Hewlett-Packard Company Couche arrière pour une ensemble des transducteurs acoustiques

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3817726A1 (de) * 1988-05-25 1989-11-30 Siemens Ag Vorrichtung zur raeumlichen ultraschall-ortung von konkrementen
CA2139151A1 (fr) * 1994-01-14 1995-07-15 Amin M. Hanafy Reseau acoustique bidimensionnel et sa methode de fabrication
US5757727A (en) * 1996-04-24 1998-05-26 Acuson Corporation Two-dimensional acoustic array and method for the manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0160821A2 (fr) * 1984-04-04 1985-11-13 Siemens Aktiengesellschaft Dispositif de lecture d'une image de charges bidimensionnelle au moyen d'une barrette de capteurs

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988536A (en) * 1974-12-30 1976-10-26 Moricca Anthony C Scanning apparatus for television display or pick-up
US4025910A (en) * 1975-01-23 1977-05-24 Massachusetts Institute Of Technology Solid-state camera employing non-volatile charge storage elements
DE3224026A1 (de) * 1982-06-28 1983-12-29 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur auslese eines zweidimensionalen ladungsbildes mittels eines arrays

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0160821A2 (fr) * 1984-04-04 1985-11-13 Siemens Aktiengesellschaft Dispositif de lecture d'une image de charges bidimensionnelle au moyen d'une barrette de capteurs

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ULTRASONICS SYMPOSIUM 1979 PROCEEDINGS, 26.-28. September 1979, Seiten 226-231, New York, US; K.M. LAKIN et al.: "Wavefront reconstruction acoustic imaging using two dimensional arrays" *
ULTRASONICS SYMPOSIUM 1981 PROCEEDINGS, 14.-16. Oktober 1981, Seiten 685-689, New York, US; J.F. GELLY et al.: "Properties for a 2D multiplexed array for acoustic imaging" *
ULTRASONICS, Band 19, Nr. 2, 1981, Seiten 81-86, IPC Business Press, Guildford, GB; M. PAPPALARDO: "Hybrid linear and matrix acoustic arrays" *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0625379A2 (fr) * 1993-05-17 1994-11-23 Hewlett-Packard Company Dispositif pour conditionner et interconnecter des signaux pour un transducteur acoustique
EP0625379A3 (fr) * 1993-05-17 1995-08-09 Hewlett Packard Co Dispositif pour conditionner et interconnecter des signaux pour un transducteur acoustique.
EP0637470A2 (fr) * 1993-08-05 1995-02-08 Hewlett-Packard Company Couche arrière pour une ensemble des transducteurs acoustiques
EP0637470A3 (fr) * 1993-08-05 1995-11-22 Hewlett Packard Co Couche arrière pour une ensemble des transducteurs acoustiques.

Also Published As

Publication number Publication date
US4742494A (en) 1988-05-03
DE3769724D1 (de) 1991-06-06
ATE63178T1 (de) 1991-05-15
EP0256378B1 (fr) 1991-05-02
JPS6358178A (ja) 1988-03-12

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