EP0243256A1 - Zusammenstellungen für Thermistoren mit negativen Temperaturkoeffizienten - Google Patents

Zusammenstellungen für Thermistoren mit negativen Temperaturkoeffizienten Download PDF

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Publication number
EP0243256A1
EP0243256A1 EP87400895A EP87400895A EP0243256A1 EP 0243256 A1 EP0243256 A1 EP 0243256A1 EP 87400895 A EP87400895 A EP 87400895A EP 87400895 A EP87400895 A EP 87400895A EP 0243256 A1 EP0243256 A1 EP 0243256A1
Authority
EP
European Patent Office
Prior art keywords
copper
nickel
barium
atomic percentage
manganese
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP87400895A
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English (en)
French (fr)
Other versions
EP0243256B1 (de
Inventor
Roland Carnet
Alain Lagrange
Jean-Pierre Caffin
Abel Rousset
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Europeenne de Composants Electroniques LCC CICE
Original Assignee
Compagnie Europeenne de Composants Electroniques LCC CICE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Compagnie Europeenne de Composants Electroniques LCC CICE filed Critical Compagnie Europeenne de Composants Electroniques LCC CICE
Priority to AT87400895T priority Critical patent/ATE57788T1/de
Publication of EP0243256A1 publication Critical patent/EP0243256A1/de
Application granted granted Critical
Publication of EP0243256B1 publication Critical patent/EP0243256B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043Oxides or oxidic compounds

Definitions

  • the present invention relates to compositions for thermistors with negative temperature coefficient, more particularly compositions for thermistors with negative temperature coefficient having a low resistivity, this resistivity being stable over time.
  • CTN thermistors With a negative temperature coefficient based on semiconductor oxides, called CTN thermistors, currently available on the market, some contain at least two types of cations, those of manganese and nickel, these compositions being obtained using manganese oxide, most often in the form Mn3O4, and nickel oxide, most often in the form NiO.
  • thermistors of this type have a resistivity of between 1,000 ⁇ .cm and 100,000 ⁇ .cm.
  • the composition in accordance with the present invention comprises 40 to 67.6% in atomic percentage of manganese, 20 to 33% in atomic percentage of nickel, 12 to 20% in atomic percentage of copper and 0.4 at 7% by atomic percentage of an element chosen from barium or strontium.
  • the composition in accordance with the present invention comprises 45 to 67.2% in atomic percentage of manganese, 20 to 33% in atomic percentage of nickel, 12 to 20% in atomic percentage of copper and 0.8 to 2% by atomic percentage of calcium.
  • the nickel rate was chosen taking into account the fact that, in a manganese-nickel system, the resistivity decreases with an increase in the nickel rate passing through a minimum at a nickel rate of 22% in atomic percentage and that beyond this point, the resistivity increases again with the nickel content, as shown on the curve in FIG. 2.
  • the manganese ions are brought in the form of manganese oxide, the nickel ions in the form of nickel oxide, the copper ions in the form of copper oxide and the barium ions in the form of barium salt or oxide.
  • the manganese oxide will be in the form MnO2, Mn2O3, Mn3O4 or a mixture of these elements, nickel oxide in the form NiO, copper oxide in the form CuO, Cu2O, the salt or barium oxide in the form BaSO4, BaNO3, BaCO3, the salt or calcium oxide in the form CaSO4, CaNO3, CaCO3, the salt or strontium oxide in the form SrSO4, SrNO3, SrCO3.
  • other types of oxides or salts can be envisaged.
  • the CTN thermistors having the compositions given above are obtained chemically, that is to say by heating a mixed oxalate of manganese, nickel, copper and barium or strontium or calcium, or a hydrate said oxalate, in an atmosphere consisting of a mixture of an inert gas and oxygen having a reduced partial pressure of oxygen at the decomposition temperature of the oxalate, the temperature is maintained until complete decomposition of the oxalate, the product obtained is heated in an inert atmosphere to a temperature between 420 ° C and 800 ° C for a time sufficient to obtain particles having the dimensions of the specific surface desired, then the compositions are transformed ceramic particles according to the usual methods.
  • Tests 1 to 10 of Table I and those of the other tables were carried out on thermistors prepared using the same process, namely a conventional process for the preparation of ceramics. Only the proportions between the various components or the sintering temperature have been modified as will be explained in each table. Tests 11 and 12 in Table I were carried out using the chemical method.
  • the composition thus sieved was pressed in the form of discs using a hydraulic machine of known type under a pressure of between 3 and 4 tonnes / cm2.
  • the discs thus obtained are sintered at a temperature between 1180 ° C and 1250 ° C, with a plateau time of a total duration of one hour.
  • the sintering temperature is chosen as a function of the copper content, so as to obtain a resistivity and a ⁇ R / R ratio corresponding to those fixed.
  • Table III represents the influence of the sintering temperature on certain compositions of the type of those tested in Table II.
  • Tables IV and V are identical to Table I and represent respectively the influence of the strontium rate and the calcium rate on the electrical characteristics of the NTC thermistors developed from the Mn, Ni, Cu system. In these tables, the thermistors are obtained using powder technology.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
EP87400895A 1986-04-25 1987-04-17 Zusammenstellungen für Thermistoren mit negativen Temperaturkoeffizienten Expired - Lifetime EP0243256B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT87400895T ATE57788T1 (de) 1986-04-25 1987-04-17 Zusammenstellungen fuer thermistoren mit negativen temperaturkoeffizienten.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8606026A FR2598021B1 (fr) 1986-04-25 1986-04-25 Compositions pour thermistances a coefficient de temperature negatif
FR8606026 1986-04-25

Publications (2)

Publication Number Publication Date
EP0243256A1 true EP0243256A1 (de) 1987-10-28
EP0243256B1 EP0243256B1 (de) 1990-10-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP87400895A Expired - Lifetime EP0243256B1 (de) 1986-04-25 1987-04-17 Zusammenstellungen für Thermistoren mit negativen Temperaturkoeffizienten

Country Status (4)

Country Link
EP (1) EP0243256B1 (de)
AT (1) ATE57788T1 (de)
DE (1) DE3765684D1 (de)
FR (1) FR2598021B1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2652675A1 (fr) * 1989-10-03 1991-04-05 Europ Composants Electron Composition pour thermistances a coefficient de temperature negatif et de tres faible resistivite electrique.
CN111606693A (zh) * 2020-06-01 2020-09-01 东阳市聚冉电子科技有限公司 一种高温负温度系数热敏电阻材料的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE475405A (de) * 1942-03-27
DE914748C (de) * 1941-08-10 1954-07-08 Western Electric Co Elektrisches Widerstandsmaterial
FR1129167A (fr) * 1955-07-19 1957-01-16 Csf Perfectionnements aux thermistances
EP0028510A1 (de) * 1979-11-02 1981-05-13 Matsushita Electric Industrial Co., Ltd. Oxid-Thermistor-Zusammensetzungen und sie enthaltende Thermistoren

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE914748C (de) * 1941-08-10 1954-07-08 Western Electric Co Elektrisches Widerstandsmaterial
BE475405A (de) * 1942-03-27
FR1129167A (fr) * 1955-07-19 1957-01-16 Csf Perfectionnements aux thermistances
EP0028510A1 (de) * 1979-11-02 1981-05-13 Matsushita Electric Industrial Co., Ltd. Oxid-Thermistor-Zusammensetzungen und sie enthaltende Thermistoren

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2652675A1 (fr) * 1989-10-03 1991-04-05 Europ Composants Electron Composition pour thermistances a coefficient de temperature negatif et de tres faible resistivite electrique.
CN111606693A (zh) * 2020-06-01 2020-09-01 东阳市聚冉电子科技有限公司 一种高温负温度系数热敏电阻材料的制备方法

Also Published As

Publication number Publication date
FR2598021B1 (fr) 1990-10-19
ATE57788T1 (de) 1990-11-15
DE3765684D1 (de) 1990-11-29
FR2598021A1 (fr) 1987-10-30
EP0243256B1 (de) 1990-10-24

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