EP0209535B1 - Selbstspeichernde anzeigeeinrichtung mit dünnfilmelektrolumineszenz- und fotoleiterschichten - Google Patents

Selbstspeichernde anzeigeeinrichtung mit dünnfilmelektrolumineszenz- und fotoleiterschichten Download PDF

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Publication number
EP0209535B1
EP0209535B1 EP86900157A EP86900157A EP0209535B1 EP 0209535 B1 EP0209535 B1 EP 0209535B1 EP 86900157 A EP86900157 A EP 86900157A EP 86900157 A EP86900157 A EP 86900157A EP 0209535 B1 EP0209535 B1 EP 0209535B1
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Prior art keywords
electroluminescent
layer
photoconductive
film
thin
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French (fr)
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EP0209535A1 (de
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Pascal Thioulouse
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/088—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements using a non-linear two-terminal element
    • G09G2300/0885—Pixel comprising a non-linear two-terminal element alone in series with each display pixel element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
    • G09G2360/145—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen
    • G09G2360/147—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen the originated light output being determined for each pixel
    • G09G2360/148—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen the originated light output being determined for each pixel the light being detected by light detection means within each pixel

Definitions

  • the present invention relates to a memory effect display device comprising thin electroluminescent and photoconductive layers.
  • a display device essentially comprises an electroluminescent layer (or a stack of layers comprising an electroluminescent layer which may be called “electroluminescent structure") interposed between two electrode systems, which are connected to addressing circuits.
  • a photoconductive layer can be arranged in series with the electroluminescent structure so as to establish, under the effect of an optical excitation, an electrical conduction between some of these electrodes. This conduction leads to the establishment of appropriate electrical potentials and the appearance of an excitation of the electroluminescent layer, which then emits radiation. This is used primarily for displaying information, but it also makes it possible to maintain the conduction of the photoconductive layer, even after cessation of optical addressing. There is therefore self-maintenance or, if you like, memory effect.
  • An electrode transparent 22 is connected to the electrodes 12 and 18 and an opaque electrode (AI) 24 is arranged in the electroluminescent material, so that the latter is interposed between, on the one hand, this electrode 24 and, on the other hand, the two electrodes 18 and 22.
  • a laser 26 is capable of emitting a light beam 28 which strikes the photoconductive material 16 in the zone situated between the electrodes 12 and 14.
  • this device is as follows. At rest, an AC voltage is applied to the electrode 24, and to the electrode 14, but the laser 26 is stopped.
  • the photoconductive material 16 is not optically excited, it behaves like an insulator.
  • the electrodes 14 and 12 are therefore electrically isolated from each other and the potential of the electrode 12 is floating, as is that of the electrodes 18 and 22.
  • the electroluminescent material is not excited and therefore does not emit no light.
  • the excitation is controlled opfically by the laser 26.
  • the latter emits a beam 28 which strikes the photoconductor 16 between the electrodes 12 and 14 making this zone electrically conductive.
  • the two electrodes 12 and 14 are then connected by a conductive channel (symbolically marked by the arrow 36) and the potential of the electrodes 12, 18 and 22 is established at the value fixed by the potential applied to the electrode 14.
  • a potential difference then appears between the electrode 24, on the one hand, and the electrodes 18 and 22, on the other hand. This causes the appearance of an electric field and the excitation of the electroluminescent material.
  • the radiation 30 emitted by the electroluminescent material towards the front of the device allows the display of information for an observer positioned at 32.
  • the laser 26 can be put to rest without stopping the electroluminescence. We thus obtain a memory effect.
  • the display stops as soon as the electrical excitation is removed.
  • the actual light-emitting structure 20 is composed of two similar light-emitting layers separated by an electrode 24 acting as an optical screen, this to isolate the photoconductive element from the ambient light incident on the device on the observer side.
  • This principle requires a set of electrodes on four distinct levels, requiring multiple additional stages of masking, etching and deposition in the manufacturing process.
  • an electroluminescent display device with memory effect which comprises a layer of photoconductive material interposed between a first and a second layer of electroluminescent materials.
  • the first light-emitting layer has a light-emitting band which is included within the limits of the excitation band of the photoconductive layer.
  • the second electroluminescent layer has an emission band of light which is outside these limits and which is in principle included in the visible part of the spectrum and which can be used for display purposes.
  • the electroluminescence emanating from these layers is relatively low due to the fact that it occurs a significant drop in the excitation voltage in the photoconductive layer, which has a high impedance due to the relatively low luminescence of the first electroluminescent layer.
  • a switching voltage When a switching voltage is applied, there is an increase in the light emission from the first light-emitting layer, which has the effect of exciting the photoconductive layer.
  • An electro-optical reaction is therefore obtained between the first light-emitting layer and the photoconductive layer, the drop in switching voltage which occurs in the photoconductive layer rapidly decreasing, while the voltage drop which occurs in the first and second light-emitting layer increases rapidly.
  • the device When the photoconductive material is in the state in which it is fully conductive, the device has passed to a stable active state and the maintenance voltage causes the generation, by the first light-emitting layer, of an electroluminescence sufficient for the photoconductive material remains fully conductive even when the switching voltage ceases to be applied.
  • the invention aims to further simplify these devices while improving their performance and their manufacturing conditions.
  • the invention provides for using an electroluminescent layer (or a stack of layers comprising an electroluminescent layer) and a photoconductive layer which are all thin layers, that is to say layers whose thickness is on the order of a micron or less, practically between 0.1 and 2 microns.
  • the thinness of the electroluminescent layer results in an interesting advantage which is as follows.
  • the thin electroluminescent layers deposited on a smooth and flat substrate are themselves smooth and flat and are then the seat of an effect commonly called optical guidance.
  • the levels of luminance extracted from the device are of the same order for devices based on thin layers as for devices with non-thin layers, that is to say “powder” (typically 100 to 1000 Cd / m 2 to 1 kHz of excitation)
  • the internal light fluxes are much more intense in thin film structures (typically a factor of 10) due to the optical guiding effect and the absence of optical scattering.
  • a final advantage derived from the use of thin layers for the electroluminescent structure is that the light is not diffused by the layers and the rear photoconductive layer, of dark appearance, provides an excellent display contrast.
  • the photoconductive layer is deposited uniformly over the entire surface of the display and absorbs most of the incident ambient light, it therefore prevents the reflection of the latter on the network d generally 48 opaque and metallic electrodes. It thus contributes to significantly enhance the contrast of the device of the invention.
  • the electroluminescent material is based on powder therefore very diffusing, then the device consists of several networks of metal electrodes 12 and 24 not masked by the photoconductive layer and which will therefore reflect the incident ambient light.
  • the electrode systems used can be of various types depending on the application envisaged.
  • the electrode systems consist of two families of conductive strips, the strips of one of the systems being crossed relative to the strips of the other system.
  • the volume delimited by each intersection between an electrode of one system and an electrode of the other constitutes a picture element.
  • An image can then be displayed on such a matrix screen by exciting a certain number of these image elements.
  • a well-known method of displaying for a matrix screen is the "one line at a time" technique by which the lines (one of the two electrode systems) are excited or addressed one after the other sequentially; the columns (the other electrode system) are addressed simultaneously at the same time.
  • the optical excitation which renders the photoconductive material is obtained by the light emitted by the electroluminescent layer itself under the effect of an electrical excitation temporarily exceeding a certain threshold, the addressing of the device thus being entirely electric.
  • the device can comprise a specific optical addressing device capable of causing the conduction of certain areas of the photoconductive layer.
  • This optical device can be a laser, an optical pencil or any other light source.
  • the addressing means may be an electron beam.
  • the device in question will be close to that described in the article entitled “Device Characterization of an Electron-Beam-Switched Thin-Film ZnS: Mn Electroluminescent Faceplate published by O. Sahni et al. in "IEEE Transactions on Electron Devices", vol. ED 28, n ° 10, June 81, page 708.
  • the addressing means then consists of a single electroluminescent element covering the entire rear surface (electron gun side) of the front face of a cathode ray tube and fed independently of the gun .
  • the contribution of the invention lies in the addition of a photoconductive layer with the same surface as the light-emitting layer or layers and interposed between the latter and the rear electrode made of AI.
  • the photoconductive material As for the photoconductive material, its absorption spectrum must be adapted to the emission spectrum of the electroluminescent element to ensure the latter maximum sensitivity to this electroluminescent emission. It can be constituted by the bodies already used in this kind of device: CdS, CdSe, or CdS-CdSe, or even CdS: Cu, CI. Thus, with CdS-CdSe, the inventor was able to obtain switching times of the order of a millisecond with electrical addressing; A. H. Kitai et al. reported an electrical switching time of 20 ms.
  • Maintenance of the on state for a switched display point must be carried out alternately with the maintenance voltage. It can be obtained in two non-mutually exclusive ways. If the decay time of the light-emitting doping center is sufficiently slow to allow recovery of the light pulses from one alternation to the other of the maintenance voltage, the photoconductive layer will still be subjected to the luminescence tail of the previous light impression on the new alternation or electrical pulse and the device will remain in the on state. If the decay time of the transmitting center is too short or the frequency of the maintenance voltage too low, it will then be necessary to choose a photoconductive material with a sufficiently slow response time to allow maintenance of the switched on state of the device.
  • the layers are not drawn to scale and this for clarity. It suffices to indicate again that the photoconductive layer and the electroluminescent layer as well as any other layers of the electroluminescent structure generally have a thickness of the order of a micron (practically between 0.1 and 2 microns).
  • the electrodes 42 they are conventionally produced by depositing a layer of indium tin oxide (“ITO”) typically 0.2 microns thick.
  • ITO indium tin oxide
  • the insulating substrate can be glass, for example 7059 glass from the Coming brand or ordinary “soda-lime” glass.
  • the electrodes 48 can be opaque and produced by deposition of aluminum for example or transparent and produced by deposition of ITO for example.
  • the device represented in FIG. 2 comprises a transparent substrate 40, transparent in-line electrodes 42 (the cut shown is supposed to be made along one of these lines), a thin light-emitting layer 44, a thin photoconductive layer 46 and column electrodes 48.
  • the electroluminescence layer can be replaced by a stack of layers comprising an electroluminescent layer.
  • the other layers can be dielectric layers for an electroluminescent structure of the thin film type with alternating excitation or a resistive protective layer for a thin film structure with unidirectional excitation.
  • the electrode systems in rows and columns are permanently connected to an alternating voltage generator 50, the applied voltage is called the maintenance voltage.
  • the line electrodes 42 are connected to a line addressing circuit 52L and the column electrodes 48 to a column addressing circuit 52C. These circuits can be placed in parallel with the generator 50 as in FIG. 3 or in series. The observation is preferably carried out through the substrate 42, at 53.
  • FIGS. 3 and 4. On the first, we see the equivalent electrical diagram of a display point, that is to say of the parallelepiped volume between an electrode row and a column electrode.
  • the photoconductive layer 46 is electrically equivalent to a variable resistance R46 and to a fixed capacitance C46.
  • the light-emitting layer 44 is equivalent to a variable resistance R44 and to a fixed capacitor C44.
  • An additional capacitance C44 ′ represents the contribution of one or more dielectric layers generally deposited on and / or before the electroluminescent layer (as will be seen below with reference to FIG. 7).
  • the graph in FIG. 4 shows the variation of the luminance L emitted by a display point as a function of the voltage V applied between the electrodes which frame this point. Luminescence does not appear until this voltage has reached a value V1 which corresponds to a certain threshold of electric field necessary for obtaining the phenomenon of electroluminescence. From this value, the excited point emits light. The rear part of the light radiation emitted by the layer 44 strikes the photoconductor 46 which, insulating as it was (resistance R46 strong), becomes conductive (resistance R46 weak). Almost all of the voltage is then applied to the electroluminescent layer 44 and the electric field applied to this layer increases suddenly. The voltage can therefore be reduced without stopping the electroluminescence.
  • the generator 50 can be a sinusoidal voltage generator. However, rectangular or pulse signal generators are also suitable.
  • the device which has just been described has the particularity of being solely electrical addressing.
  • optical addressing devices also fall within the scope of the invention.
  • Such a device is shown in the figures. As shown, it always includes a substrate 40, row electrodes 42, a thin light-emitting layer 44, a thin photoconductive layer 46, column electrodes 48 and a generator 50, but the addressing means here consists of a laser 54 and a deflection device 56. The latter can be produced using a galvanometric mirror or a bundle of fibers.
  • the optical addressing means can also be an optical pencil.
  • the light beam 58 can be directed onto any one of the display points defined by the overlap of two electrodes of the systems 42 and 48.
  • the optical excitation of one of the points makes the layer 46 conductive in this area, which causes the fall of the equivalent resistance R46.
  • the voltage of the source 50 being always equal to V3
  • the electroluminescent material is excited by a field whose value exceeds the electroluminescence threshold, which causes the emission of electroluminescence and the switching of the point in the on state. For all the other points, the voltage V3 will be insufficient to cause electroluminescence.
  • the device shown in FIG. 6 is similar to that of FIG. 2 except that the thin light-emitting layer or the stack of thin layers comprising an light-emitting layer 44 is located on the thin photoconductive layer 46 and that the column electrodes 48 are transparent. necessarily. The observation is preferably carried out through the electrodes 48 at 53b: Such a structure may be necessary if, for example, the conditions under which the thin photoconductive layer is deposited are such as to degrade the characteristics and the layer (s) composing the electroluminescent element, it is then preferable to deposit these second.
  • L In a structure of the type of the invention and assuming complete absorption of the light incident on the photoconductive layer by the latter, L will have a typical value of 300 Cdlm 2 at an excitation frequency of 1 kHz for ZnS : Mn.
  • the linearity ⁇ PC received by the photoconductive layer will therefore be - 7,300 lux.
  • the typical ambient lighting of an indoor workstation is around 400 lux, which is much lower than ⁇ PC ⁇
  • optical screen described in the article by G. Olive et al. cited above and source of technological complications is therefore no longer necessary with the device of the invention. This is due to the excellent optical coupling between the light-emitting layer and the photoconductive layer and also due to the intense light flux emitted in the ZnS: Mn in a thin layer.
  • the optical coupling between electroluminescent layer and photoconductive layer can be further improved by choosing dielectrics with high refractive index such as for example Ta 2 O 5 (n ⁇ 2.1) or ferroelectric materials such as PbTi0 3 (n - 2 , 7).
  • the electroluminescent layers 61 and photoconductive layers 64 are in contact with each other but the assembly is protected by a lower dielectric layer 62 and a upper dielectric layer 65.
  • the optical coupling between the light-emitting layer and the photoconductive layer is maximum: the entire flux radiated by the light-emitting layer and not extracted from the structure in air is recovered by the photoconductive layer.
  • a luminance L of 300 Cdlm 2 gives an illumination ⁇ PC of the photoconductive layer of approximately 18,000 lux.
  • the device shown is obtained from the device presented in b by inserting an additional dielectric layer 65.
  • This type of structure has several advantages. First of all, it is known that multilayer dielectrics have electrical and protective properties under strong field superior to those of a simple dielectric layer. Furthermore, the electrical properties of the electroluminescent structure (threshold voltage, threshold stiffness) are very sensitive to the nature and quality of the interfaces between the electroluminescent layer proper and the neighboring layers.
  • the dielectric of layer 65 will be chosen so as to optimize its interface with the electroluminescent layer. We can also choose a dielectric with a high refractive index to get as close as possible to the optimal optical coupling according to the well-known principle of anti-reflection layers.
  • a layer 65 in Y 2 0 3 of thickness 0.05 microns approximately is chosen, a fraction 1 / e 2 of the light power incident on the interface between the electroluminescent layer and the layer 65 is transmitted to each reflection at the photoconductive layer. There is thus an almost integral transfer of the light wave from the light-emitting layer to the photoconductive layer after a few reflections, this despite the relatively low index of the layer 65 in Y 2 0 3 .
  • optical addressing means laser 26 of FIG. 1
  • an all-electric addressing screen is perfectly reliable.
  • the photoconductive element can have a photoresistor behavior in the sense that, at a given level of lighting, it will behave like a resistor - R 46 in FIG. 3 - and that its resistance R 46 will depend on the level of lighting only and no terminal voltage. It is recognized that it is difficult to ensure excellent reproducibility of the resistivity of a photoconductor in the dark, the underlying mechanisms being generally poorly understood and unwanted impurities of a poorly known nature which can, for example, modify this resistivity.
  • the ignition of the device in the dark will be very difficult, the ignition voltage V 1 will have to be very high in certain cases, this voltage being found entirely at the terminals of the electroluminescent element after triggering of the latter, it may even lead to the destruction of the latter.
  • the voltage V 1 will also be very sensitive to stray light such as ambient lighting
  • An original solution proposed in the invention is to use a photoconductor having a photodiode behavior. Such behavior can be achieved by adapting the process for producing the photoconductive layer to make it very resistive in the dark and by applying high fields thereto.
  • a device comprising an electroluminescent structure and a photoconductive layer in a-Si: H of type N + - IN + (I: intrinsic) and tested by the inventor showed properties similar to those of FIG. 4, the voltage “avalanche” (V 1 ) at the terminals of the photoconductive layer in the dark being about 20 V for 2 ⁇ m of thickness of the photoconductive layer and corresponding to a field of the order of 10 5 V / cm . This field value is characteristic of the material and is reproducible from one sample to another.
  • An electroluminescent-photoconductive device integrating a photoconductive element of photodiode type can be schematized like the figure 3, but with a photoconductive element equivalent to 2 head-to-tail diodes of variable characteristics according to the lighting, in the case - not restrictive - where the electroluminescent element is of the alternating excitation type.
  • the width of the hysteresis V 1 -V 2 ( Figure 4) is at most equal to V1 and it is reproducible.
  • the conduction of the photoconductor in V 1 is linked to mechanisms which resemble the avalanche phenomenon, which are not directly linked to the photoconductivity of the material.
  • the voltage V 1 is therefore not sensitive to low levels of illumination.
  • the voltage to be maintained across the photoconductor before the device is triggered is of the order of 20 to 50 V.
  • the electrical protection layers of the electroluminescent element like the layers dielectrics for the electroluminescent type with alternating excitation thin layers and like the resistive layer for the electroluminescent type with unidirectional excitation will effectively protect the photoconductive layer itself.
  • the hysteresis width V 1 -V 2 is equal to Vi -v s and that the photoconductive element is protected by the electroluminescent element, the latter acting as a current limiter, this protection being distributed over the entire surface of the photoconductor in the case of the invention.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Claims (7)

1. Elektrolumineszente Anzeigevorrichtung mit Speichereffekt, enthaltend auf einem isolierenden Träger (40) eine elektrolumineszente Schicht (44) und eine photoleitfähige Schicht (46), die übereinander angeordnet sind, wobei die Gruppe dieser zwei Schichten zwischen zwei Elektrodensystemen (42, 48) angeordnet sind, die mit einer elektrischen Spannungsquelle (50) verbunden sind, die die Erregung gewisser Zonen der elektrolumineszenten Schicht gestattet, dadurch gekennzeichnet, daß die elektrolumineszente Schicht (44) und die photoleitfähige Schicht (46) dünne Schichten sind, deren Dicke in der wm-Größenordnung ist.
2. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die elektrolumineszente Schicht ein Laminat aus einer dünnen elektrolumineszenten Schicht und dünnen dielektrischen Schichten ist.
3. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die photoleitfähige Schicht sich zwischen der elektrolumineszenten Schicht und einer dielektrischen Schicht befindet.
4. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die dünne dielektrische Schicht sich zwischen der photoleitfähigen Schicht und der elektrolumineszenten Schicht befindet.
, 5. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die optische Erregung, die das photoleitfähige Material zu Anfang leitfähig macht, durch das Licht erhalten wird, das von der dünnen elektrolumineszenten Schicht selbst unter dem Einfluß einer ausreichenden elektrischen Erregung erhalten wird, die an zwei Elektrodensysteme angelegt wird, so daß die Adressierung der Vorrichtung vollständig elektrisch ist (52C, 52L).
6. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß das photoleitfähige Material aus amorphem, wasserstoffhaltigem Silicium besteht.
7. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß das photoleitfähige Material aus CdS, CdSe oder Zn0 besteht.
EP86900157A 1984-12-18 1985-12-11 Selbstspeichernde anzeigeeinrichtung mit dünnfilmelektrolumineszenz- und fotoleiterschichten Expired - Lifetime EP0209535B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8419353A FR2574972B1 (fr) 1984-12-18 1984-12-18 Dispositif d'affichage a effet memoire comprenant des couches electroluminescente et photoconductrice superposees
FR8419353 1984-12-18

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EP0209535A1 EP0209535A1 (de) 1987-01-28
EP0209535B1 true EP0209535B1 (de) 1990-03-07

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US (1) US4808880A (de)
EP (1) EP0209535B1 (de)
JP (1) JPH0665160B2 (de)
DE (1) DE3576422D1 (de)
FR (1) FR2574972B1 (de)
WO (1) WO1986003871A1 (de)

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US3358185A (en) * 1965-08-20 1967-12-12 Hartman Huyck Systems Co Inc Gated electroluminescent display device having a plurality of electroluminescent cells with one cell includng a photoconductor element
US3711719A (en) * 1970-11-20 1973-01-16 Westinghouse Electric Corp Storage amplifier screen
JPS526618A (en) * 1975-06-25 1977-01-19 Nippon Steel Corp Stationary planting method for tree on artificial ground
JPS5538087Y2 (de) * 1975-07-14 1980-09-06
US4035774A (en) * 1975-12-19 1977-07-12 International Business Machines Corporation Bistable electroluminescent memory and display device
CA1034276A (en) * 1976-01-30 1978-07-04 Her Majesty The Queen In Right Of Canada As Represented By The Minister Of National Defence Of Her Majesty's Canadian Government Laser addressed display
JPS56151930A (en) * 1980-04-25 1981-11-25 Kasei Optonix Co Ltd Film pack for dental intraoral roentgenography

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Publication number Publication date
FR2574972A1 (fr) 1986-06-20
FR2574972B1 (fr) 1987-03-27
EP0209535A1 (de) 1987-01-28
JPS62501180A (ja) 1987-05-07
US4808880A (en) 1989-02-28
WO1986003871A1 (fr) 1986-07-03
DE3576422D1 (de) 1990-04-12
JPH0665160B2 (ja) 1994-08-22

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