EP0154583B1 - Microwave fin-line switch and limiter - Google Patents

Microwave fin-line switch and limiter Download PDF

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Publication number
EP0154583B1
EP0154583B1 EP85400294A EP85400294A EP0154583B1 EP 0154583 B1 EP0154583 B1 EP 0154583B1 EP 85400294 A EP85400294 A EP 85400294A EP 85400294 A EP85400294 A EP 85400294A EP 0154583 B1 EP0154583 B1 EP 0154583B1
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Prior art keywords
diode
compensation
strip
circuit
line
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EP85400294A
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German (de)
French (fr)
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EP0154583A1 (en
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Ronald Funck
Jean Stevance
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Thales SA
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Thomson CSF SA
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/15Auxiliary devices for switching or interrupting by semiconductor devices

Definitions

  • the present invention relates to a slitting line switching and limiting device, operating at microwave frequencies.
  • This device operates in different modes, depending on whether the diode or diodes which are part of it are polarized in direct or reverse. Depending on the operating mode, this device attenuates the input microwave signal partially (limiter) or totally switch).
  • the invention essentially relates to the compensation circuit for the reactive elements associated with each diode, that is to say its stray resistance, its self connected to the connections and its capacity in reverse polarization.
  • the slotted lines also known by the English name of end-line or slot-line, consist of two metallizations deposited on an insulating substrate such as quartz, alumina or a plastic substrate which leave between them a slit of 100 to 200 microns in width: this circuit behaves, in the range of 18 to 200 GHz for example, like a waveguide.
  • insulating substrate such as quartz, alumina or a plastic substrate which leave between them a slit of 100 to 200 microns in width: this circuit behaves, in the range of 18 to 200 GHz for example, like a waveguide.
  • Different ways of mounting one or more diodes make it possible to make such a circuit either an attenuator or switch or a limiter.
  • the diodes used are generally PIN or Schottky diodes and they are connected either by beam-lead or by wire: these connections present, in microwave, a self which has a dominating influence on the characteristics of the circuit.
  • the object of the invention is to compensate for this parasitic self by a tuning or compensation circuit which takes into account the reactive elements associated with each diode. Compensation is obtained by a coplanar line circuit, in series with the diode mounted in parallel between the two strips of the slotted line, this circuit being composed of at least one section of coplanar line of adjustable length.
  • the circuit comprises two line sections per diode, at the rate of one section for each connection of the diode, and in addition a section can be opened, that is to say isolated from the band with which it is neighboring, which makes it possible to polarize the diode by an independent voltage.
  • the invention relates to a slitting line switching and limiting device, operating at microwave frequencies, comprising, supported by a substrate, two metallized strips defining between them a slot, and at least one diode, mounted in parallel between the two strips, this diode having, in addition to its resistance R and its junction capacity C, a self L due to the connections, this device being characterized in that, with a view to compensating for the impedance of the self L at high frequency, it includes a compensation element, consisting of at least one metal section, coplanar with the slotted line, connected in series with the diode and adjustable in length, this metal section falling within a range formed in a strip from which it is separated by at least two non-metallized bands.
  • Figure 1 very schematically shows the mounting of a slit or end-line circuit. It comprises, placed inside a box provided with the appropriate connections, a substrate made of dielectric materials 1 (quartz, alumina) on which are deposited two metal strips 2 and 3 leaving between them a slot 4.
  • the ends of the metallizations have two impedance adaptations 5 and 6 which constitute the transition zones between the external circuit and the slit circuit.
  • One or more diodes 7 are connected in bridge between the two metallizations 2 and 3.
  • one of the metallizations, 3 in this figure is insulated so as to be able to bring a DC bias voltage .
  • this same metallization is grounded by choosing the thickness of the wall of the guide equal to t. d / 4, X d being the wavelength in the dielectric medium considered.
  • the width of the slit is between 100 and 200 microns.
  • the assembly should be as short as possible.
  • the length of the slot 4 is of the order of 5 mm or less and the two transition regions of the order of approximately 12 mm, or less.
  • the basic circuit consists of one or more diodes in parallel on the slotted line as shown in FIG. 1.
  • These diodes can be mounted in beam-lead type, that is to say with beams welded flat: their capacity of the order of 0.02 pF allows them to work up to very high frequencies, 200 GHz for example. They can also be of the conventional type, with a patch connected by a thermocompressed wire: their capacity is then greater than or equal to 0.1 pF, and they can only work at lower frequencies, depending on the capacity of the diode, that is to say around 18 GHz.
  • the diodes that can be used are PIN diodes or Schottky diodes, but the PIN diodes, especially at very high frequencies, must be considered as perfect diodes, having a low capacity in reverse bias and a low resistance in forward bias, associated with a choke.
  • L for serial connection i.e. the choke of the beam-lead beam or that of the wire connection.
  • a diode D is represented by its conventional acronym in series with a choke L s which is formed by the connection wire. If the diode is forward biased, its impedance is equal to the sum of the resistance R d of the diode in the forward direction, and of the self L s . If the diode is reverse biased, its impedance is then equal to the sum of the resistance R plus the junction capacitance C of the reverse biased diode, in series with the self L s of the connections.
  • the invention relates to a particularly simple way of achieving this compensation in slit type circuits, this compensation being very easily adjustable to tune the circuits to the desired frequency.
  • the switch is open, that is to say that there is isolation, when the diode or diodes are polarized directly.
  • the switch is on, that is to say that there are only small insertion losses, when the diode or diodes are reverse biased.
  • This operating mode is compatible with operation as a passive limiter.
  • the increase in the input signal power causes an injection of carriers into the diodes therefore an increase in losses, hence a limitation of the output power.
  • mode 2 of operation which is the reverse of the previous mode
  • the switch is open, that is to say that there is isolation, when the diodes are reverse biased.
  • the switch is on, that is to say that there is only small losses, when the diodes are polarized in direct.
  • This mode is incompatible with operation as a passive limiter.
  • mode 1 mode 1
  • mode 2 mode 2
  • FIG. 3 represents the circuit diagram for compensating a series diode in a slotted line according to the known art.
  • This figure 3 comprises on its left part the diagram of the diode mounted in the slot and on its right part the electrical diagram equivalent to the assembly on the left.
  • the method according to the invention is represented by the equivalence diagrams of the assembly of compensation of a parallel diode in a slotted line, in figures 4 and 5. These figures include in their left part the mounting of the diode as it is carried out and in their right parts the equivalences in mode 1 for the figure 4 and in mode 2 for FIG. 5.
  • At least one PIN diode is mounted in parallel on the slit of the slit line, by associating with it a reactive element jX series (j being the symbol of imaginary) intended to compensate for the reactive elements associated with the diodes.
  • jX series j being the symbol of imaginary
  • the assembly constituted by the diode, its connection choke and the tuning or compensation component jX has a reactance value defined in the passing direction: it is therefore necessary either to associate circuits adaptation to the diode, or use at least two diodes placed at a suitable distance on the slotted line.
  • the ideal series compensation element leading to the widest operating band is a localized element.
  • mode 2 that is to say, in Figure 5, where it must be selfic, it is easy to achieve by lengthening the connection of the diode for example.
  • mode 1 on the other hand, where it must be capacitive to grant the connection self of the diode, it is not possible to realize it in the form of a localized capacity engraved, or reported, because this would have dimensions close to the quarter wave.
  • the use of localized capacity added to the circuit poses problems of reproducibility and technological complexity.
  • the solution provided by the invention is to make the necessary compensation using an engraved line section, coplanar with the strips of the slotted line on the common substrate.
  • FIG. 6 represents the central part of a line with a slot compensated by a coplanar resonator according to the invention.
  • the slotted line 4 being formed by two metal strips 2 and 3 deposited on a substrate, a reentrant coplanar line 9 is produced in one of the two strips, the strip 3 for example.
  • This reentrant coplanar line constituted by a metallization section 9, is obtained simply by etching in the metal of the strip 3 of two areas 10 and 11.
  • the section 9 has a length 1 obtained by etching.
  • the diode 7 is connected between the two points A and A ', located at the free end of the section 9 and on the metal strip 2 which is opposite to it.
  • a wire in the air, bridges the two edges of the metal strip which comprises the reentrant section 9: this wire connected between the points B and B 'makes it possible to equalize the potentials at these points the.
  • the length of the compensation section 9 can be, if necessary, adjusted by means of a metal wire which is thermo-compressed between the points C, C ′ and C ", in a variable position as a function of the desired compensation
  • the length of the compensation section 9 can also be obtained by depositing, in the bottom of areas 10 and 11 which have been etched in metallization 3, and in the vicinity of points' C, C 'and C ", a silver lacquer which more or less bypasses section 9.
  • 2 ⁇ l / ⁇ , being the wavelength at the frequency of the device, that is to say if 1 ⁇ X / 4, the device is selfic, that is to say if X / 2>I> ⁇ / 4 the device is capacitive.
  • FIG. 7 represents the central part of a line with a slot compensated by a coplanar resonator, in a second embodiment.
  • the diode being mounted between points A and A ', as in FIG. 6, point A is part of a first section 9 of length I 1 but point A' is part of a second section 12 of length 1 2 .
  • the diode is mounted between two sections of line 9 and 12
  • the circuit of FIG. 8 can be produced with two symmetrical and open sections or stubs: that is to say that the symmetrical production in FIG. 7 with two sections in short circuit according to FIG. 6 can also be carried out with two open circuit sections according to Figure 8.
  • FIG. 9 represents an assembly with a diode, according to the invention, operating as well in mode 1 as in mode 2.
  • a high impedance section 17 is inserted at the height of the diode in the slotted line: this section is intended for adaptation to the on state, to correct the impedance of the diode which is not sufficiently high.
  • FIG. 10 represents the central part of a slit line with two diodes according to the invention. These two diodes are mounted in this case in a high impedance section 17, in the same way as in the case of Figure 9, but they are spaced from each other by a distance "e which corresponds to a spacing optimized for adaptation in the forward direction, if the diodes are reverse biased. It is, however, possible to have the same assembly while keeping the same slot width along the line.
  • Figure 11 - shows the central part of a slit line with a diode, with open circuit section.
  • the diode is polarized through the section 13 by an external connection 16, and taking into account the operation in mode 1 and the high impedance section 17, we have in this case of figure, the equation:
  • Figure 12 shows a diagram in which the two types of sections are used to compensate the diode.
  • the diode being mounted between a section 12 in short circuit, of characteristic impedance Z 2 and of length 1 2 and a section 13, in open circuit, of characteristic impedance Z, and of length I 1 , the impedance of the compensation line is equal to:
  • the circuit according to the invention has essentially two types of application: on the one hand switching circuits such as switch, n-channel switch at low and medium levels, on the other hand passive limitation circuits, it is ie not ordered, of medium power.
  • switching circuits such as switch, n-channel switch at low and medium levels
  • passive limitation circuits it is ie not ordered, of medium power.
  • the first type controlled switches and switches
  • two operating states a state passing with low loss and a non-passing state with high isolation.
  • the diodes are self-polarized thanks to a continuous feedback external to the microwave circuit: in this case the diodes gradually self-polarize live as the microwave power increases.
  • the use of a circuit in mode 1 is imperative to have a passive limiter operation.
  • the line or slot limiting or switching device according to the invention is used in telecommunications equipment, radars or microwave missile guidance.

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Description

La présente invention concerne un dispositif de commutation et de limitation à ligne à fente, fonctionnant en hyperfréquences. Ce dispositif fonctionne selon différents modes, selon que la ou les diodes qui en font partie sont polarisées en direct ou en inverse. Selon le mode de fonctionnement, ce dispositif atténue le signal hyperfréquences d'entrée partiellement (limiteur) ou totalement interrupteur). Dans ce dispositif, l'invention concerne essentiellement le circuit de compensation des éléments réactifs associés à chaque diode, c'est-à-dire sa résistance parasite, sa self liée aux connexions et sa capacité en polarisation inverse.The present invention relates to a slitting line switching and limiting device, operating at microwave frequencies. This device operates in different modes, depending on whether the diode or diodes which are part of it are polarized in direct or reverse. Depending on the operating mode, this device attenuates the input microwave signal partially (limiter) or totally switch). In this device, the invention essentially relates to the compensation circuit for the reactive elements associated with each diode, that is to say its stray resistance, its self connected to the connections and its capacity in reverse polarization.

Les lignes à fente, connues également sous l'appellation anglaise de fin-line ou slot-line, sont constituées par deux métallisations déposées sur un substrat isolant tel que le quartz, l'alumine ou un substrat plastique qui laissent entre elles une fente de 100 à 200 microns de largeur : ce circuit se comporte, dans l'intervalle de 18 à 200 GHz par exemple, comme un guide d'onde. Différentes façons de monter une ou plusieurs diodes permettent de faire d'un tel circuit soit un atténuateur ou commutateur soit un limiteur. Les diodes utilisées sont généralement des diodes PIN ou Schottky et elles sont connectées soit par poùtres (beam-lead) soit par fil : ces connexions présentent, en hyperfréquences, une self qui a une influence prépondérante sur les caractéristiques du circuit.The slotted lines, also known by the English name of end-line or slot-line, consist of two metallizations deposited on an insulating substrate such as quartz, alumina or a plastic substrate which leave between them a slit of 100 to 200 microns in width: this circuit behaves, in the range of 18 to 200 GHz for example, like a waveguide. Different ways of mounting one or more diodes make it possible to make such a circuit either an attenuator or switch or a limiter. The diodes used are generally PIN or Schottky diodes and they are connected either by beam-lead or by wire: these connections present, in microwave, a self which has a dominating influence on the characteristics of the circuit.

L'objet de l'invention est de compenser cette self parasite par un circuit d'accord ou compensation qui prend en compte les éléments réactifs associés à chaque diode. La compensation est obtenue par un circuit en ligne coplanaire, en série avec la diode montée en parallèle entre les deux bandes de la ligne à fente, ce circuit étant composé d'au moins un tronçon de ligne coplanaire de longueur réglable.The object of the invention is to compensate for this parasitic self by a tuning or compensation circuit which takes into account the reactive elements associated with each diode. Compensation is obtained by a coplanar line circuit, in series with the diode mounted in parallel between the two strips of the slotted line, this circuit being composed of at least one section of coplanar line of adjustable length.

Selon des perfectionnements à l'invention, le circuit comprend deux tronçons de ligne par diode, à raison d'un tronçon pour chaque connexion de la diode, et en outre un tronçon peut être ouvert, c'est-à-dire isolé de la bande dont il est voisin, ce qui permet de polariser la diode par une tension indépendante.According to improvements to the invention, the circuit comprises two line sections per diode, at the rate of one section for each connection of the diode, and in addition a section can be opened, that is to say isolated from the band with which it is neighboring, which makes it possible to polarize the diode by an independent voltage.

De façon plus précise, l'invention concerne un dispositif de commutation et de limitation à ligne à fente, fonctionnant en hyperfréquences, comportant, supportées par un substrat, deux bandes métallisées définissant entre elles une fente, et au moins une diode, montée en parallèle entre les deux bandes, cette diode présentant, outre sa résistance R et sa capacité de jonction C, une self L due aux connexions, ce dispositif étant caractérisé en ce que, en vue de compenser l'impédance de la self L à haute fréquence, il comprend un élément de compensation, constitué par au moins un tronçon métallique, coplanaire avec la ligne à fente, connecté en série avec la diode et réglable en longueur, ce tronçon métallique s'inscrivant dans une plage pratiquée dans une bande dont il est séparé par au moins deux bandes non métallisées.More precisely, the invention relates to a slitting line switching and limiting device, operating at microwave frequencies, comprising, supported by a substrate, two metallized strips defining between them a slot, and at least one diode, mounted in parallel between the two strips, this diode having, in addition to its resistance R and its junction capacity C, a self L due to the connections, this device being characterized in that, with a view to compensating for the impedance of the self L at high frequency, it includes a compensation element, consisting of at least one metal section, coplanar with the slotted line, connected in series with the diode and adjustable in length, this metal section falling within a range formed in a strip from which it is separated by at least two non-metallized bands.

L'invention sera mieux comprise par la description qui en est faite, autour de quelques exemples d'application, cette description s'appuyant sur les figures jointes en annexe qui représentent :

  • - figure 1 : représentation simplifiée d'une ligne à fente ou fin-line selon l'art connu,
  • . - figure 2 : schémas d'équivalences d'une diode,
  • - figure 3 : schéma de montage de compensation d'une diode série dans une ligne à fente selon l'art connu,
  • - figures 4 et 5 : schémas d'équivalences d'un montage de compensation d'une diode parallèle dans une ligne à fente selon l'invention,
  • - figure 6 : ligne à fente compensée par résonateur coplanaire selon l'invention,
  • - figures 7 et 8 : ligne à fente compensée par résonateur coplanaire, dans deux autres formes de réalisation de l'invention,
  • - figure 9 : ligne à fente à une diode selon l'invention,
  • - figure 10 : ligne à fente à deux diodes selon l'invention,
  • - figure 11 : ligne à fente à une diode, avec tronçon en circuit ouvert, selon l'invention,
  • - figure 12 ligne à fente à une diode avec deux types de tronçon selon l'invention.
The invention will be better understood from the description which is made thereof, around a few examples of application, this description being based on the appended figures which represent:
  • FIG. 1: simplified representation of a slotted or end-line according to the prior art,
  • . - Figure 2: equivalence diagrams of a diode,
  • FIG. 3: circuit diagram for compensating a series diode in a slotted line according to the prior art,
  • FIGS. 4 and 5: diagrams of equivalences of a compensation arrangement for a parallel diode in a slotted line according to the invention,
  • FIG. 6: line with slot compensated by coplanar resonator according to the invention,
  • FIGS. 7 and 8: line with slot compensated by coplanar resonator, in two other embodiments of the invention,
  • FIG. 9: slit line with a diode according to the invention,
  • FIG. 10: slot line with two diodes according to the invention,
  • FIG. 11: slit line with one diode, with open circuit section, according to the invention,
  • - Figure 12 slotted line to a diode with two types of section according to the invention.

La figure 1 représente de façon très schématique le montage d'un circuit à fente ou fin-line. Il comporte, placé à l'intérieur d'un boîtier muni des connexions adéquates, un substrat en matériaux diélectriques 1 (quartz, alumine) sur lequel sont déposées deux bandes métalliques 2 et 3 laissant entre elles une fente 4. Les extrémités des métallisations présentent deux adaptations d'impédance 5 et 6 qui constituent les zones de transition entre le circuit extérieur et le circuit à fente. Une ou plusieurs diodes 7 sont montées en pont entre les deux métallisations 2 et 3. Pour que le circuit soit utilisable avec des diodes, l'une des métallisations, 3 sur cette figure, est isolée de manière à pouvoir amener une tension de polarisation continue. Par contre, vis-à-vis de la haute fréquence, cette même métallisation est mise à la masse en choisissant l'épaisseur de la paroi du guide égale à t.d/4, Xd étant la longueur d'onde dans le milieu diélectrique considéré.Figure 1 very schematically shows the mounting of a slit or end-line circuit. It comprises, placed inside a box provided with the appropriate connections, a substrate made of dielectric materials 1 (quartz, alumina) on which are deposited two metal strips 2 and 3 leaving between them a slot 4. The ends of the metallizations have two impedance adaptations 5 and 6 which constitute the transition zones between the external circuit and the slit circuit. One or more diodes 7 are connected in bridge between the two metallizations 2 and 3. In order for the circuit to be usable with diodes, one of the metallizations, 3 in this figure, is insulated so as to be able to bring a DC bias voltage . On the other hand, with respect to the high frequency, this same metallization is grounded by choosing the thickness of the wall of the guide equal to t. d / 4, X d being the wavelength in the dielectric medium considered.

Pour réaliser une impédance caractéristique adaptée aux impédances des diodes, la largeur de la fente est comprise entre 100 et 200 microns. Dans le but de minimiser les pertes d'insertion, le montage doit être le plus court possible. Par exemple la longueur de la fente 4 est de l'ordre de 5 mm ou moins et les deux régions de transition de l'ordre de 12 mm environ, ou moins.To achieve a characteristic impedance adapted to the impedances of the diodes, the width of the slit is between 100 and 200 microns. In order to minimize insertion losses, the assembly should be as short as possible. For example, the length of the slot 4 is of the order of 5 mm or less and the two transition regions of the order of approximately 12 mm, or less.

Dans un circuit de commutation ou de limitation à fente, le circuit de base est constitué par une ou plusieurs diodes en parallèle sur la ligne à fente tel que représenté en figure 1. Ces diodes peuvent être montées en type beam-lead, c'est-à-dire avec des poutres soudées à plat : leur capacité de l'ordre de 0,02 pF leur permet de travailler jusqu'à de très hautes fréquences, 200 GHz par exemple. Elles peuvent être également du type classique, avec une pastille connectée par un fil thermocomprimé : leur capacité est alors supérieure ou égale à 0,1 pF, et elles ne peuvent travailler qu'à plus basses fréquences, dépendant de la capacité de la diode, c'est-à-dire aux environs de 18 GHz. Les diodes utilisables sont des diodes PIN ou des diodes Schottky, mais les diodes PIN, surtout à très hautes fréquences, doivent être considérées comme des diodes parfaites, ayant une faible capacité en polarisation inverse et une faible résistance en polarisation directe, associées à une self L de connexion en série, c'est-à-dire la self de la poutre du beam-lead ou celle de la connexion par fil.In a slit switching or limiting circuit, the basic circuit consists of one or more diodes in parallel on the slotted line as shown in FIG. 1. These diodes can be mounted in beam-lead type, that is to say with beams welded flat: their capacity of the order of 0.02 pF allows them to work up to very high frequencies, 200 GHz for example. They can also be of the conventional type, with a patch connected by a thermocompressed wire: their capacity is then greater than or equal to 0.1 pF, and they can only work at lower frequencies, depending on the capacity of the diode, that is to say around 18 GHz. The diodes that can be used are PIN diodes or Schottky diodes, but the PIN diodes, especially at very high frequencies, must be considered as perfect diodes, having a low capacity in reverse bias and a low resistance in forward bias, associated with a choke. L for serial connection, i.e. the choke of the beam-lead beam or that of the wire connection.

C'est ce que représente la figure 2 dans laquelle une diode D est représentée par son sigle conventionnel en série avec une self Ls qui est constituée par le fil de connexion. Si la diode est polarisée en direct, son impédance est égale à la somme de la résistance Rd de la diode dans le sens passant, et de la self Ls. Si la diode est polarisée en inverse, son impédance est alors égale à la somme de la résistance R plus la capacité de jonction C de la diode polarisée en inverse, en série avec la self Ls des connexions.This is what is shown in FIG. 2 in which a diode D is represented by its conventional acronym in series with a choke L s which is formed by the connection wire. If the diode is forward biased, its impedance is equal to the sum of the resistance R d of the diode in the forward direction, and of the self L s . If the diode is reverse biased, its impedance is then equal to the sum of the resistance R plus the junction capacitance C of the reverse biased diode, in series with the self L s of the connections.

A hautes fréquences, l'impédance de la self n'est pas négligeable et sa présence rend l'utilisation de la diode de plus en plus difficile lorsque la fréquence s'élève. Il est donc nécessaire d'associer à la diode un élément de circuit permettant de compenser la self Ls. L'invention concerne une manière particulièrement simple de réaliser cette compensation en circuits de type à fente, cette compensation étant réglable très aisément pour accorder les circuits à la fréquence désirée.At high frequencies, the impedance of the inductor is not negligible and its presence makes the use of the diode more and more difficult when the frequency increases. It is therefore necessary to associate with the diode a circuit element making it possible to compensate for the self L s . The invention relates to a particularly simple way of achieving this compensation in slit type circuits, this compensation being very easily adjustable to tune the circuits to the desired frequency.

Mais, avant de décrire l'invention, il est nécessaire de définir les deux modes de fonctionnement du circuit selon l'invention, car la désignation de ces modes sera fréquemment utilisée dans la suite du texte.However, before describing the invention, it is necessary to define the two operating modes of the circuit according to the invention, since the designation of these modes will be frequently used in the following text.

Selon le mode 1 de fonctionnement du circuit selon l'invention, l'interrupteur est ouvert, c'est-à-dire qu'il y a isolement, lorsque la ou les diodes sont polarisées en direct. L'interrupteur est passant, c'est-à-dire qu'il n'y a que de faibles pertes d'insertion, lorsque la ou les diodes sont polarisées en inverse. Ce mode de fonctionnement est compatible avec le fonctionnement en limiteur passif. L'augmentation de la puissance de signal d'entrée provoque une injection de porteurs dans les diodes donc une augmentation des pertes, d'où une limitation de la puissance de sortie.According to mode 1 of operation of the circuit according to the invention, the switch is open, that is to say that there is isolation, when the diode or diodes are polarized directly. The switch is on, that is to say that there are only small insertion losses, when the diode or diodes are reverse biased. This operating mode is compatible with operation as a passive limiter. The increase in the input signal power causes an injection of carriers into the diodes therefore an increase in losses, hence a limitation of the output power.

Selon le mode 2 de fonctionnement, qui est l'inverse du mode précédent, l'interrupteur est ouvert, c'est-à-dire qu'il y a isolement, lorsque les diodes sont polarisées en inverse. L'interrupteur est passant, c'est-à-dire qu'il n'y a que de faible pertes, lorsque les diodes sont polarisées en direct. Ce mode est incompatible avec le fonctionnement en limiteur passif.According to mode 2 of operation, which is the reverse of the previous mode, the switch is open, that is to say that there is isolation, when the diodes are reverse biased. The switch is on, that is to say that there is only small losses, when the diodes are polarized in direct. This mode is incompatible with operation as a passive limiter.

Ces deux modes seront appelés par la suite, respectivement, mode 1 et mode 2.These two modes will be called subsequently, respectively, mode 1 and mode 2.

Dans l'utilisation de diodes PIN beam-lead, la self équivalente des poutres de la diode a une influence prépondérante. La présence de cette self a comme conséquences :

  • - une impédance plus faible de la diode en polarisation inverse qu'en polarisation directe, d'où un fonctionnement difficile en mode 1 qui est le seul mode possible en limitation passive. La réalisation de circuits en mode 1 utilisant des diodes non compensées nécessite donc des fentes très fines (100 microns), délicates à réaliser, ou une structure comportant trois diodes, c'est-à-dire des pertes importantes,
  • - des pertes d'insertions importantes pour le sens passant en mode 1 lorsque les diodes sont polarisées en inverse, à cause de la proximité de la résonance entre la capacité de jonction C et la self,
  • - une tenue en puissance faible en claquage, pour la diode polarisée en inverse, à cause de la surtension du circuit capacité de jonction-self de jonction. Ces considérations rendent nécessaires l'utilisation d'un circuit de compensation réactif, permettant de compenser les éléments réactifs associés aux diodes PIN.
When using PIN beam-lead diodes, the equivalent self of the diode beams has a preponderant influence. The presence of this self has consequences:
  • - A lower impedance of the diode in reverse polarization than in direct polarization, hence a difficult operation in mode 1 which is the only possible mode in passive limitation. The realization of circuits in mode 1 using uncompensated diodes therefore requires very fine slits (100 microns), difficult to produce, or a structure comprising three diodes, that is to say significant losses,
  • significant losses of insertions for the direction passing into mode 1 when the diodes are reverse biased, because of the proximity of the resonance between the junction capacitor C and the choke,
  • - a low breakdown power withstand, for the reverse biased diode, because of the overvoltage of the junction-junction capacitance circuit. These considerations make it necessary to use a reactive compensation circuit, making it possible to compensate the reactive elements associated with the PIN diodes.

La figure 3 représente le schéma de montage de compensation d'une diode série dans une ligne à fente selon l'art connu. Cette figure 3 comporte sur sa partie gauche le schéma de la diode montée dans la fente et sur sa partie droite le schéma électrique équivalent au montage de gauche.FIG. 3 represents the circuit diagram for compensating a series diode in a slotted line according to the known art. This figure 3 comprises on its left part the diagram of the diode mounted in the slot and on its right part the electrical diagram equivalent to the assembly on the left.

En ce qui concerne la figure 3, ainsi que les figures 6 à 12, il est convenu que celles-ci ne représentent que la partie de la ligne à fente dans la zone entourant la diode.With regard to FIG. 3, as well as FIGS. 6 to 12, it is agreed that these only represent the part of the slotted line in the area surrounding the diode.

Dans un tel montage diode en série, la diode représentée par sa capacité C et la self L de sa connexion est montée entre les bords opposés d'une plage 8 pratiquée dans une bande métallique 3 par exemple. Cette plage 8 est donc constituée par le substrat sans métallisation. Si la profondeur de la plage 8 a une longueur I, la bande métallique 3 constitue aux bornes de la diode un tronçon, également appelé un stub, court-circuité puisqu'il est réalisé dans une même plage métallique, d'impédance caractéristique Z,, et de longueur I, connecté en parallèle sur l'ensemble diode-self de connexion. Le circuit, c'est-à-dire la plage 8, est réglé de telle manière que :

  • - en polarisation inverse il y a une résonance série entre la capacité C de la diode et la self L de connexion et l'interrupteur est alors passant,
  • - en polarisation directe, il y a une résonance parallèle entre la self L de connexion et le stub court-circuité et l'interrupteur est alors non passant. Ce type de circuit, qui est connu, ne fonctionne pas bien à 94 GHz, fréquence particulièrement intéressante puisqu'elle correspond à une fenêtre de transmission dans l'atmosphère. Les difficultés principales proviennent de l'impossibilité matérielle d'assurer simultanément les deux conditions d'accord qui sont très délicates à réaliser à cette fréquence.
In such a diode arrangement in series, the diode represented by its capacitance C and the choke L of its connection is mounted between the opposite edges of a strip 8 formed in a metal strip 3 for example. This area 8 is therefore formed by the substrate without metallization. If the depth of the area 8 has a length I, the metal strip 3 constitutes at the terminals of the diode a section, also called a stub, short-circuited since it is produced in the same metal area, of characteristic impedance Z, , and of length I, connected in parallel on the diode-choke connection assembly. The circuit, i.e. track 8, is set so that:
  • - in reverse polarization there is a series resonance between the capacitance C of the diode and the connection self L and the switch is then on,
  • - in direct polarization, there is a parallel resonance between the connection choke L and the short-circuited stub and the switch is then non-conducting. This type of circuit, which is known, does not work well at 94 GHz, a particularly advantageous frequency since it corresponds to a transmission window in the atmosphere. The main difficulties arise from the material impossibility of simultaneously ensuring the two conditions of agreement which are very difficult to achieve at this frequency.

La méthode selon l'invention est représentée par les schémas d'équivalence du montage de compensation d'une diode parallèle dans une ligne à fente, en figures 4 et 5. Ces figures comportent dans leur partie gauche le montage de la diode tel qu'il est réalisé et dans leurs parties droites les équivalences dans le mode 1 pour la figure 4 et dans le mode 2 pour la figure 5.The method according to the invention is represented by the equivalence diagrams of the assembly of compensation of a parallel diode in a slotted line, in figures 4 and 5. These figures include in their left part the mounting of the diode as it is carried out and in their right parts the equivalences in mode 1 for the figure 4 and in mode 2 for FIG. 5.

Selon l'invention, au moins une diode PIN est montée en parallèle sur la fente de la ligne à fente, en lui associant un élément réactif série jX (j étant le symbole des imaginaires) destiné à compenser les éléments réactifs associés aux diodes. Pour les deux types de circuit, l'ensemble constitué par la diode, sa self de connexion et le composant d'accord ou de compensation jX a une valeur de réactance définie dans le sens passant : il est donc nécessaire soit d'associer des circuits d'adaptation à la diode, soit d'utiliser au minimum deux diodes placées à distance convenable sur la ligne à fente.According to the invention, at least one PIN diode is mounted in parallel on the slit of the slit line, by associating with it a reactive element jX series (j being the symbol of imaginary) intended to compensate for the reactive elements associated with the diodes. For both types of circuit, the assembly constituted by the diode, its connection choke and the tuning or compensation component jX has a reactance value defined in the passing direction: it is therefore necessary either to associate circuits adaptation to the diode, or use at least two diodes placed at a suitable distance on the slotted line.

L'élément de compensation série idéal conduisant à la bande de fonctionnement la plus large, est un élément localisé. En mode 2, c'est-à-dire.en figure 5, où il doit être selfique, il est facile à réaliser en allongeant la connexion de la diode par exemple. En mode 1, par contre, où il doit être capacitif pour accorder la self de connexion de la diode, il n'est pas possible de le réaliser sous la forme d'une capacité localisée gravée, ou rapportée, car celle-ci aurait des dimensions voisines du quart d'onde. L'utilisation d'une capacité localisée rapportée sur le circuit pose des problèmes de reproductibilité et de complexité technologique.The ideal series compensation element leading to the widest operating band is a localized element. In mode 2, that is to say, in Figure 5, where it must be selfic, it is easy to achieve by lengthening the connection of the diode for example. In mode 1, on the other hand, where it must be capacitive to grant the connection self of the diode, it is not possible to realize it in the form of a localized capacity engraved, or reported, because this would have dimensions close to the quarter wave. The use of localized capacity added to the circuit poses problems of reproducibility and technological complexity.

La solution apportée par l'invention est de réaliser la compensation nécessaire à l'aide d'un tronçon de ligne gravé, coplanaire avec les bandes de la ligne à fente sur le substrat commun.The solution provided by the invention is to make the necessary compensation using an engraved line section, coplanar with the strips of the slotted line on the common substrate.

La figure 6 représente la partie centrale d'une ligne à fente compensée par résonateur coplanaire selon l'invention. La ligne à fente 4 étant constituée par deux bandes métalliques 2 et 3 déposée sur un substrat, une ligne coplanaire réentrante 9 est réalisée dans l'une des deux bandes, la bande 3 par exemple. Cette ligne coplanaire réentrante constituée par un tronçon de métallisation 9, est obtenue simplement par gravure dans le métal de la bande 3 de deux plages 10 et 11. Le tronçon 9 a une longueur 1 obtenue par gravure.FIG. 6 represents the central part of a line with a slot compensated by a coplanar resonator according to the invention. The slotted line 4 being formed by two metal strips 2 and 3 deposited on a substrate, a reentrant coplanar line 9 is produced in one of the two strips, the strip 3 for example. This reentrant coplanar line constituted by a metallization section 9, is obtained simply by etching in the metal of the strip 3 of two areas 10 and 11. The section 9 has a length 1 obtained by etching.

La diode 7 est connectée entre les deux points A et A', situés à l'extrémité libre du tronçon 9 et sur la bande métallique 2 qui lui est opposée. Selon un perfectionnement à l'invention, un fil, dans l'air, ponte les deux bords de la bande métallique qui comporte le tronçon réentrant 9 : ce fil connecté entre les points B et B' permet d'égaliser les potentiels en ces points là. En outre, la diode étant connectée entre A et A' la longueur du tronçon de compensation 9 peut être, si nécessaire, réglée au moyen d'un fil métallique qui est thermo-comprimé entre les points C, C'et C", en une position variable en fonction de la compensation désirée. La longueur du tronçon 9 de compensation peut être également obtenue en déposant, dans le fond des plages 10 et 11 qui ont été gravées dans la métallisation 3, et au voisinage des points 'C, C' et C", une laque d'argent qui court-circuite plus ou moins le tronçon 9.The diode 7 is connected between the two points A and A ', located at the free end of the section 9 and on the metal strip 2 which is opposite to it. According to an improvement to the invention, a wire, in the air, bridges the two edges of the metal strip which comprises the reentrant section 9: this wire connected between the points B and B 'makes it possible to equalize the potentials at these points the. In addition, the diode being connected between A and A ′ the length of the compensation section 9 can be, if necessary, adjusted by means of a metal wire which is thermo-compressed between the points C, C ′ and C ", in a variable position as a function of the desired compensation The length of the compensation section 9 can also be obtained by depositing, in the bottom of areas 10 and 11 which have been etched in metallization 3, and in the vicinity of points' C, C 'and C ", a silver lacquer which more or less bypasses section 9.

D'autres formes de réalisation de l'invention seront montrées dans les figures suivantes, mais toutes ont en commun les avantages de ce type de montage de compensation, c'est-à-dire :

  • - gravure du substrat sur une seule face, donc en coplanaire
  • - réglage du circuit facile par ajustage de la longueur électrique des tronçons : thermocompression d'un fil ou dépôt d'une laque conductrice. Ce type de circuit permet de réaliser les meilleures performances et la meilleure reproductibilité.
Other embodiments of the invention will be shown in the following figures, but all of them have in common the advantages of this type of compensation arrangement, that is to say:
  • - etching of the substrate on one side, therefore in coplanar
  • - easy circuit adjustment by adjusting the electrical length of the sections: thermocompression of a wire or deposition of a conductive lacquer. This type of circuit makes it possible to achieve the best performance and the best reproducibility.

L'impédance du tronçon ou stub 9 est égale à :

Figure imgb0001
avec : Zr = impédance caractéristique de la ligne coplanaire, ω = pulsation, I = longueur du tronçon, v = vitesse de propagation de l'onde dans le milieu.The impedance of the section or stub 9 is equal to:
Figure imgb0001
with: Z r = characteristic impedance of the coplanar line, ω = pulsation, I = length of the section, v = speed of propagation of the wave in the medium.

Etant donné que ω = 2πl/λ, étant la longueur d'onde à la fréquence du dispositif,

Figure imgb0002
c'est-à-dire si 1 < X/4, le dispositif est selfique,
Figure imgb0003
c'est-à-dire si X/2 > I > λ/4 le dispositif est capacitif.Given that ω = 2πl / λ, being the wavelength at the frequency of the device,
Figure imgb0002
that is to say if 1 <X / 4, the device is selfic,
Figure imgb0003
that is to say if X / 2>I> λ / 4 the device is capacitive.

La figure 7 représente la partie centrale d'une ligne à fente compensée par résonateur coplanaire, dans une seconde forme de réalisation. La diode étant montée entre les points A et A', comme sur la figure 6, le point A fait partie d'un premier tronçon 9 de longueur I1 mais le point A' fait partie d'un second tronçon 12 de longueur 12. I1 et 12 sont réglables séparément, et si I1 = 12, l'impédance en série avec la diode est 2jZctg wl/v. Bien évidemment, dans le cas où la diode est montée entre deux tronçons de ligne 9 et 12, il y a deux fils métalliques pour l'équipotentialité entre les points B, B' et D, D', de chaque côté de la fente.FIG. 7 represents the central part of a line with a slot compensated by a coplanar resonator, in a second embodiment. The diode being mounted between points A and A ', as in FIG. 6, point A is part of a first section 9 of length I 1 but point A' is part of a second section 12 of length 1 2 . I 1 and 1 2 are adjustable separately, and if I 1 = 1 2 , the impedance in series with the diode is 2jZ c tg wl / v. Obviously, in the case where the diode is mounted between two sections of line 9 and 12, there are two metal wires for the equipotentiality between the points B, B 'and D, D', on each side of the slot.

La figure 8 représente une troisième variante à l'invention. Tandis que dans le cas des figures 6 et 7, le ou les tronçons ou stubs 9 et 12 étaient en court-circuit, dans le cas de la figure 8 le tronçon est en circuit ouvert. Il est constitué par au moins un tronçon 13, mais il est préférable d'y ajouter au moins un élément de tronçon 14, plusieurs petits tronçons tels que 14, 15, chacun étant isolé sur le substrat, étant une solution préférable. La solution du tronçon ouvert permet plus facilement la polarisation de la diode montée comme précédemment entre les points A et A'. Cette polarisation est amenée par un fil métallique 16, soudé ou thermocomprimé sur l'un des tronçons 13, 14 ou 15, la longueur totale du tronçon étant choisie par pontage entre les tronçons élémentaires de façon à compenser la diode. Les définitions étant les mêmes que celles données à l'occasion de la figure 6, l'impédance du circuït de compensation selon la figure 8 est donnée par :

  • - jZc cotg wl/v
  • Si I < X/4, la ligne de compensation est capacitive.
  • Si X/2 > 1 > λ/4, la ligne de compensation est selfique.
Figure 8 shows a third variant of the invention. While in the case of Figures 6 and 7, the section or sections or stubs 9 and 12 were short-circuited, in the case of Figure 8 the section is in open circuit. It consists of at least one section 13, but it is preferable to add to it at least one section element 14, several small sections such as 14, 15, each being isolated on the substrate, being a preferable solution. The solution of the open section makes it easier to polarize the diode mounted as above between the points A and A '. This polarization is brought by a metal wire 16, welded or thermocompressed on one of the sections 13, 14 or 15, the total length of the section being chosen by bridging between the elementary sections so as to compensate the diode. The definitions being the same as those given on the occasion of FIG. 6, the impedance of the compensation circuit according to FIG. 8 is given by:
  • - jZ c cotg wl / v
  • If I <X / 4, the compensation line is capacitive.
  • If X / 2>1> λ / 4, the compensation line is selfic.

Le circuit de la figure 8 peut être réalisé avec deux tronçons ou stubs symétriques et ouverts : c'est-à-dire que la réalisation symétrique de la figure 7 avec deux tronçons en court-circuit selon la figure 6 peut également être réalisée avec deux tronçons en circuit ouvert selon la figure 8.The circuit of FIG. 8 can be produced with two symmetrical and open sections or stubs: that is to say that the symmetrical production in FIG. 7 with two sections in short circuit according to FIG. 6 can also be carried out with two open circuit sections according to Figure 8.

La figure 9 représente un montage à une diode, selon l'invention, fonctionnant aussi bien en mode 1 qu'en mode 2. Dans ce montage un tronçon à haute impédance 17 est inséré à hauteur de-la diode dans la ligne à fente : ce tronçon est destiné à l'adaptation à l'état passant, pour corriger l'impédance de la diode qui n'est pas suffisamment élevée.FIG. 9 represents an assembly with a diode, according to the invention, operating as well in mode 1 as in mode 2. In this assembly a high impedance section 17 is inserted at the height of the diode in the slotted line: this section is intended for adaptation to the on state, to correct the impedance of the diode which is not sufficiently high.

En mode 1, l'ensemble de la diode et de la ligne de compensation est équivalent à un court-circuit pour la diode en polarisation directe. Dans ce cas on a, la codification étant toujours la même,In mode 1, the whole of the diode and the compensation line is equivalent to a short-circuit for the diode in direct polarization. In this case we have, the coding being always the same,

Figure imgb0004
Figure imgb0004

Dans le cas du fonctionnement en mode 2, l'ensemble de la diode et de la compensation est équivalent à un court-circuit pour la diode en polarisation inverse et l'on a alors :

Figure imgb0005
In the case of operation in mode 2, the whole of the diode and of the compensation is equivalent to a short-circuit for the diode in reverse bias and we then have:
Figure imgb0005

La figure 10 représente la partie centrale d'une ligne à fente à deux diodes selon l'invention. Ces deux diodes sont montées dans ce cas de figure dans un tronçon à haute impédance 17, de la même façon que dans le cas de la figure 9, mais elles sont distantes entre elles d'une distance « e qui correspond à un écartement optimisé pour l'adaptation dans le sens passant, si les diodes sont polarisées en inverse. Il est cependant possible d'avoir le même montage en conservant la même largeur de fente tout au long de la ligne.FIG. 10 represents the central part of a slit line with two diodes according to the invention. These two diodes are mounted in this case in a high impedance section 17, in the same way as in the case of Figure 9, but they are spaced from each other by a distance "e which corresponds to a spacing optimized for adaptation in the forward direction, if the diodes are reverse biased. It is, however, possible to have the same assembly while keeping the same slot width along the line.

La figure 11 -représente la partie centrale d'une ligne à fente à une diode, avec tronçon en circuit ouvert. La diode est polarisée à travers le tronçon 13 par une connexion externe 16, et compte-tenu du fonctionnement en mode 1 et du tronçon à haute impédance 17, on a dans ce cas de figure, l'équation :

Figure imgb0006
Figure 11 - shows the central part of a slit line with a diode, with open circuit section. The diode is polarized through the section 13 by an external connection 16, and taking into account the operation in mode 1 and the high impedance section 17, we have in this case of figure, the equation:
Figure imgb0006

Enfin, la figure 12 représente un schéma dans lequel les deux types de tronçons sont utilisés pour compenser la diode. La diode étant montée entre un tronçon 12 en court-circuit, d'impédance caractéristique Z2 et de longueur 12 et un tronçon 13, en circuit ouvert, d'impédance caractéristique Z, et de longueur I1, l'impédance de la ligne de compensation est égale à :

Figure imgb0007
Finally, Figure 12 shows a diagram in which the two types of sections are used to compensate the diode. The diode being mounted between a section 12 in short circuit, of characteristic impedance Z 2 and of length 1 2 and a section 13, in open circuit, of characteristic impedance Z, and of length I 1 , the impedance of the compensation line is equal to:
Figure imgb0007

Le circuit selon l'invention a essentiellement deux types d'application : d'une part les circuits de commutation tels qu'interrupteur, commutateur à n voies à bas et moyens niveaux, d'autre part les circuits de limitation passive, c'est-à-dire non commandés, de moyenne puissance. Parmi les utilisations du premier type, les interrupteurs commandés et commutateurs, on recherche grâce à une polarisation extérieure deux états de fonctionnement : un état passant à faible perte et un état non passant à isolement élevé. Ces deux états peuvent être obtenus par les deux modes 1 et 2 qui ont été définis précédemment.The circuit according to the invention has essentially two types of application: on the one hand switching circuits such as switch, n-channel switch at low and medium levels, on the other hand passive limitation circuits, it is ie not ordered, of medium power. Among the uses of the first type, controlled switches and switches, one seeks, thanks to an external polarization, two operating states: a state passing with low loss and a non-passing state with high isolation. These two states can be obtained by the two modes 1 and 2 which have been defined previously.

Dans le cas des limiteurs passifs, les diodes sont auto-polarisées grâce à un retour continu extérieur au circuit hyperfréquence : dans ce cas les diodes s'auto-polarisent progressivement en direct au fur et à mesure que la puissance hyperfréquence augmente. L'utilisation d'un circuit en mode 1 est impérative pour avoir un fonctionnement en limiteur passif. De façon plus générale le dispositif de limitation ou de commutation à ligne et à fente selon l'invention est utilisé dans les matériels de télécommunication, radars ou guidage microondes de missiles.In the case of passive limiters, the diodes are self-polarized thanks to a continuous feedback external to the microwave circuit: in this case the diodes gradually self-polarize live as the microwave power increases. The use of a circuit in mode 1 is imperative to have a passive limiter operation. More generally, the line or slot limiting or switching device according to the invention is used in telecommunications equipment, radars or microwave missile guidance.

Claims (8)

1. A microwave slot line switching and limitation device, comprising two metallised strips (2, 3) supported by a substrate and defining between themselves a slot (4), and comprising at least one diode (7) branched in parallel between the two strips and presenting, besides its resistance R and ist junction capacity C, an inductivity L due to the connections, characterized in that, in view of the compensation of the impedance of the inductivity L at high frequency, it comprises a compensation element constituted by at least one metal portion (9) which is coplanar with the slot line, connected in series with the diode (7) and adjustable in length, this metal portion (9) being incorporated in a zone made in one strip (3) from which it is separated by at least two non-metallised strips (10, 11).
2. A device according to claim 1, characterized in that the compensation portion (9) is connected in short-circuit with the strip (3) of the slot line by its end which is opposed to that to which the diode (7) is connected.
3. A device according to claim 1, characterized in that the compensation portion is open ended with respect to the strip (3) of the slot line which is adjacent thereto thus allowing to apply a bias voltage (at 16) to the diode (7).
4. A device according to claim 1, characterized in that, when the compensation portion (9) is connected by a short-circuit to a strip (3) of the slot line, the electrical length (I) of the portion (9) is adjustable by means of a metal wire (C, C', C") applied by thermocompression between the portion (at C") and the edges of the strip (at C and C').
5. A device according to claim 1, characterized in that, when the compensation portion (9) is connected by a short-circuit to one strip (3) of the slot line, the electrical length (I) of the portion (9) is adjustable by means of a conducting varnish deposited on the insulating strips (10, 11) between the portion (9) and the edges of the strip (3).
6. A device according to claim 1, characterized in that, when the compensation portion (13) is openended with respect to the strip (3) which is adjacent thereto, the electrical length (1) of the portion (9) is adjustable by means of at least one second portion element (14) connected by a thermocompressed wire to the portion (13) to which the diode (7) is connected.
7. A device according to claim 1, characterized in that the diode is connected between two compensation portions (9, 12), (12, 13).
8. A device according to claim 1, characterized in that a metal wire (B, B'), which is thermocompressed to the edges of the zone cut into a strip (3), equalizes the potentials along the slot (4).
EP85400294A 1984-02-24 1985-02-19 Microwave fin-line switch and limiter Expired EP0154583B1 (en)

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FR8402853 1984-02-24
FR8402853A FR2560442B1 (en) 1984-02-24 1984-02-24 SLOT LINE SWITCHING AND LIMITING DEVICE, OPERATING IN MICROWAVE

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789840A (en) * 1986-04-16 1988-12-06 Hewlett-Packard Company Integrated capacitance structures in microwave finline devices
FR2604286B1 (en) * 1986-09-18 1988-11-10 Mayer Ferdy WAVE PROPAGATION STRUCTURES FOR SUPPRESSION OF OVERVOLTAGES AND ABSORPTION OF TRANSIENTS
JPH0785521B2 (en) * 1987-02-21 1995-09-13 新日本無線株式会社 Low-pass filter Waveguide type diode-limiter
US4944857A (en) * 1989-09-01 1990-07-31 Westinghouse Electric Corp. Monolithic frequency selective limiter fabrication
US5107152A (en) * 1989-09-08 1992-04-21 Mia-Com, Inc. Control component for a three-electrode device
US5023573A (en) * 1989-09-21 1991-06-11 Westinghouse Electric Corp. Compact frequency selective limiter configuration
US4970775A (en) * 1989-09-25 1990-11-20 Westinghouse Electric Corp. Batch fabrication of frequency selective limiter elements
US4980657A (en) * 1989-09-29 1990-12-25 Westinghouse Electric Corp. Coplanar waveguide frequency selective limiter
US5142255A (en) * 1990-05-07 1992-08-25 The Texas A&M University System Planar active endfire radiating elements and coplanar waveguide filters with wide electronic tuning bandwidth
US5422609A (en) * 1994-06-17 1995-06-06 The United States Of America As Represented By The Secretary Of The Navy Uniplanar microstrip to slotline transition
JP3921370B2 (en) * 2001-10-03 2007-05-30 日本電波工業株式会社 High frequency filter
JP4588947B2 (en) * 2001-12-28 2010-12-01 日本電波工業株式会社 Coplanar line type high frequency oscillator
DE10301982B4 (en) * 2003-01-15 2007-06-06 Infineon Technologies Ag waveguides
JP4547992B2 (en) * 2003-07-24 2010-09-22 株式会社村田製作所 High frequency switch and electronic device using the same
CZ299329B6 (en) 2003-08-26 2008-06-18 Pliva-Lachema A.S. Process for preparing 7-ethyl-10-[4-(1-piperidino)-1-piperidino]-carbonyloxy camptothecin
CZ299593B6 (en) 2003-12-16 2008-09-10 Pliva-Lachema A. S. Process for preparing 7-ethyl-10-hydroxycamptothecine
US20090315638A1 (en) * 2008-06-24 2009-12-24 Honeywell International Inc. Millimeter wave low-loss high-isolation switch
RU2456705C1 (en) * 2011-01-24 2012-07-20 Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") Microwave power limiter
RU2515181C1 (en) * 2012-09-17 2014-05-10 Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") Ultra-wideband microwave power limiter
RU2653088C1 (en) * 2017-03-06 2018-05-07 Акционерное общество Центральное конструкторское бюро аппаратостроения Waveguide switch
US10897130B2 (en) * 2018-03-30 2021-01-19 The Boeing Company Micro plasma limiter for RF and microwave circuit protection
CN113285679B (en) * 2021-04-23 2022-08-23 中国电子科技集团公司第二十九研究所 Ultra-wideband miniaturized amplitude expanding circuit
CN113394527B (en) * 2021-06-22 2022-06-07 湖南电磁场科技有限公司 Single-layer clip type waveguide amplitude limiting structure and waveguide amplitude limiter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL107014C (en) * 1941-07-25
US3568105A (en) * 1969-03-03 1971-03-02 Itt Microstrip phase shifter having switchable path lengths
JPS583401B2 (en) * 1972-05-23 1983-01-21 日本放送協会 micro halo
US3995239A (en) * 1975-09-08 1976-11-30 Rockwell International Corporation Transition apparatus
FR2451641A1 (en) * 1979-03-16 1980-10-10 Thomson Csf Microwave transmission line - couples coplanar di-symmetric line to symmetric slotted line using two conical structures
US4267532A (en) * 1979-10-11 1981-05-12 W. L. Keefauver, Bell Laboratories Adjustable microstrip and stripline tuners
IT1119942B (en) * 1979-11-05 1986-03-19 Cselt Centro Studi Lab Telecom DERIVED TRANSMISSION LINE FOR THE ADAPTATION OF MICRO-STRIP CIRCUITS
US4425549A (en) * 1981-07-27 1984-01-10 Sperry Corporation Fin line circuit for detecting R.F. wave signals
US4541120A (en) * 1982-08-19 1985-09-10 International Standard Electric Corporation Transmitter-receiver module

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US4642584A (en) 1987-02-10
EP0154583A1 (en) 1985-09-11
FR2560442A1 (en) 1985-08-30
FR2560442B1 (en) 1987-08-07
DE3566197D1 (en) 1988-12-15

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