JPH0785521B2 - Low-pass filter Waveguide type diode-limiter - Google Patents

Low-pass filter Waveguide type diode-limiter

Info

Publication number
JPH0785521B2
JPH0785521B2 JP3897787A JP3897787A JPH0785521B2 JP H0785521 B2 JPH0785521 B2 JP H0785521B2 JP 3897787 A JP3897787 A JP 3897787A JP 3897787 A JP3897787 A JP 3897787A JP H0785521 B2 JPH0785521 B2 JP H0785521B2
Authority
JP
Japan
Prior art keywords
limiter
diode
waveguide
low
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3897787A
Other languages
Japanese (ja)
Other versions
JPS63206001A (en
Inventor
光男 斉藤
正夫 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Japan Radio Co Ltd
Original Assignee
New Japan Radio Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Japan Radio Co Ltd filed Critical New Japan Radio Co Ltd
Priority to JP3897787A priority Critical patent/JPH0785521B2/en
Priority to GB8802414A priority patent/GB2202683B/en
Priority to KR1019880001685A priority patent/KR950002748B1/en
Publication of JPS63206001A publication Critical patent/JPS63206001A/en
Publication of JPH0785521B2 publication Critical patent/JPH0785521B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/15Auxiliary devices for switching or interrupting by semiconductor devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/207Hollow waveguide filters

Landscapes

  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Radar Systems Or Details Thereof (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、レーダ装置等に使用される導波管型ダイオー
ドリミッタに関する。
TECHNICAL FIELD The present invention relates to a waveguide type diode limiter used in radar devices and the like.

〔従来技術〕[Prior art]

例えばレーダ装置は、第4図に示すように、マグネトロ
ン1で発振したマイクロ波をサーキュレータ2によりア
ンテナ3方向に送り出して、目標物で反射した反射波を
そのアンテナ3で受信してサーキュレータ2によりリミ
ッタ4に導き、更に受信機5に転送して分析処理するよ
う構成されている。
For example, as shown in FIG. 4, the radar device sends the microwave oscillated by the magnetron 1 toward the antenna 3 by the circulator 2 and receives the reflected wave reflected by the target object by the antenna 3 and the limiter 2 by the circulator 2. 4 and further transfers to the receiver 5 for analysis processing.

リミッタ4は、アンテナ3でのマイクロ波の直接反射波
やサーキュレータ2を直接漏洩して入力する大きなエネ
ルギーのマイクロ波から受信機5を保護するためのもの
であり、通常はPINダイオードを使用して、マイクロ波
電力によるセルフバイアスによりインピーダンスを変化
させ、大電力時に回路を短絡させてリミッタ機能を果た
すように構成されている。
The limiter 4 is for protecting the receiver 5 from the microwave directly reflected by the antenna 3 and the microwave of large energy which directly leaks through the circulator 2 and is input, and normally a PIN diode is used. , The impedance is changed by self-bias by microwave power, and the circuit is short-circuited at the time of high power to perform a limiter function.

第5図はこのようなリミッタを導波管型ダイオードリミ
ッタとして構成した従来の装置を示す図である。この例
では、マイクロ波伝送路としての高いインピーダンスの
導波管6に低いインピーダンスのPINダイオード7を結
合させるために、その導波管6に同軸回路の分岐スタブ
8、9を装填し、その同軸スタブ8、9によりダイオー
ド7を装填して、そのダイオード7のセルフバイアスに
よるスイッチング作用によって分岐点で短絡、解放する
回路を構成しリミッタ機能を発揮させるようにしてい
る。
FIG. 5 is a diagram showing a conventional device in which such a limiter is configured as a waveguide type diode limiter. In this example, in order to couple a low impedance PIN diode 7 to a high impedance waveguide 6 as a microwave transmission line, the waveguide 6 is loaded with branch stubs 8 and 9 of a coaxial circuit and The diode 7 is loaded by the stubs 8 and 9, and a circuit for short-circuiting and releasing at the branch point is configured by the switching action by the self-bias of the diode 7 so that the limiter function is exhibited.

この分岐スタブの回路では、その特性インピーダンスZs
をダイオード7の容量リアクタンスの半分に等しくなる
ように選び、その電気長θ、θをそれぞれ3λ/8、
λ/8に設定した場合、マイクロ波電力の印加によるダイ
オード7のインピーダンスの変化(大電力印加時には短
絡する)により分岐点Cで最適の短絡、解放する回路が
得られる。Zoは導波管6の特性インピーダンス、Aは入
力端子、Bは出力端子である。
In this branch stub circuit, its characteristic impedance Zs
To be equal to half the capacitive reactance of the diode 7, and its electrical lengths θ 1 and θ 2 are 3λ / 8 and
When λ / 8 is set, an optimum circuit for short-circuiting and releasing at the branch point C can be obtained by the change in the impedance of the diode 7 due to the application of microwave power (short-circuiting when high power is applied). Zo is the characteristic impedance of the waveguide 6, A is an input terminal, and B is an output terminal.

更に、短絡回路構成時の分離(遮断)特性の改善、耐電
力改善を考慮した場合、そのそれぞれの特徴を有するダ
イオード、即ち分離特性はI層の薄いPINダイオードが
良好で、また耐電力特性は逆に厚い素子が良好なので、
各々の特性を持つダイオードを2個第6図に符号7′、
7″で示すように使用して、2段の分岐回路を構成した
ものもある。8′、8″、9′、9″は分岐スタブであ
る。ここで多段分岐間の電気長θはλ/4の奇数倍に設
定することで1/4波長結合回路が構成される。
Furthermore, in consideration of improvement of isolation (cutoff) characteristics in short-circuit configuration and improvement of withstand power, a diode having each of the characteristics, that is, a PIN diode having a thin I layer is preferable as an isolation characteristic, and the withstand power characteristic is On the contrary, because thick elements are good,
Two diodes having respective characteristics are shown in FIG.
There are also two-stage branch circuits that are used as shown by 7 ". 8 ', 8", 9', 9 "are branch stubs, where the electrical length θ 3 between the multi-stage branches is A quarter wavelength coupling circuit is constructed by setting an odd multiple of λ / 4.

ところが、上記のように構成される導波管型ダイオード
リミッタは、その伝送特性が第7図(a)に示すような
特性に、また分離特性が同図(b)に示すような特性と
なり、特に分離特性は特定の周波数帯域のみで損失量を
増大させるが、その両側では小さな損失量となる。
However, the waveguide type diode limiter configured as described above has a transmission characteristic as shown in FIG. 7 (a) and a separation characteristic as shown in FIG. 7 (b). In particular, the separation characteristic increases the loss amount only in a specific frequency band, but the loss amount becomes small on both sides.

このため、レーダ装置に使用した場合、マグネトロン1
の基本発振モード(第7図の周波数範囲X)よりも高い
発振モードに対しては充分な減衰を得ることができず、
その高いモードの成分が大電力となって入力すると受信
機5が破壊される事態が生じる可能性があった。
Therefore, when used in a radar device, the magnetron 1
In the oscillation mode higher than the fundamental oscillation mode (frequency range X in FIG. 7), sufficient attenuation cannot be obtained,
If the high-mode component becomes large power and is input, there is a possibility that the receiver 5 may be destroyed.

そこで、第8図に示すように導波管6の端部にシボリ10
でなるバンドパスフィルタをλ/4波長結合で装填して、
第7図(b)の二点鎖線で示すように分離特性の改善を
図ったものがある。
Therefore, as shown in FIG.
Load a bandpass filter consisting of λ / 4 wavelength coupling,
As shown by the chain double-dashed line in FIG.

しかし、この方法によっても、分岐スタブの多段装填は
寸法上の制約等によりλ/4の間隔で行われる場合が多
く、バンドフィルタによって生じる高次モードを充分減
衰させることは不可能であり、またダイオードインピー
ダンスが変化する過渡的な間はλ/4結合が乱れて不要な
共振モードが生じ完全な分離状態とならない。
However, even with this method, multi-stage loading of branch stubs is often performed at intervals of λ / 4 due to dimensional restrictions, etc., and it is impossible to sufficiently attenuate the higher-order modes generated by the band filter. During the transient period when the diode impedance changes, the λ / 4 coupling is disturbed and an unnecessary resonance mode is generated, which does not result in a completely separated state.

即ち、従来の導波管型ダイオードリミッタでは、波長
による電気長をもつ分岐スタブを必要とし、また多段構
成の場合は分岐スタブ間隔を必要とするため、分離及び
伝送特性に必ず周波数特性を持ち、分離帯域(遮断帯
域)を広帯域化することはできず、その広帯域化のた
めにλ/4型フィルタを結合した場合では、ダイオードイ
ンピーダンスの過渡的変化に対して不要な共振や高次モ
ードの発生を促して完全な分離状態が得られず、却っ
てそのフィルタ装着により回路形状が大型化するという
問題があった。
That is, in the conventional waveguide type diode limiter, a branch stub having an electrical length depending on the wavelength is required, and in the case of a multi-stage configuration, a branch stub interval is required, so that the separation and transmission characteristics always have frequency characteristics, The separation band (stop band) cannot be widened, and if a λ / 4 type filter is combined for widening the band, unnecessary resonance and higher-order modes are generated due to transient changes in diode impedance. However, there is a problem that the circuit shape becomes large due to the mounting of the filter.

〔発明の目的〕[Object of the Invention]

本発明の目的は、上記した問題を解消して目標とする分
離周波数以上の帯域についても充分な分離特性が得ら
れ、しかも不要な共振等も生じないようにすることであ
る。
An object of the present invention is to solve the above-mentioned problems and to obtain sufficient separation characteristics even in a band above the target separation frequency and to prevent unnecessary resonance and the like.

〔発明の構成〕[Structure of Invention]

このために本発明は、低域通過特性をもつ櫛の歯車導波
管の容量性ギャップ段にリミッタダイオードを装填し、
該導波管を伝搬するマイクロ波電力に応じて該リミッタ
ダイオードのインピーダンスを変化させ、該マイクロ波
の伝送、遮断を行わせるように構成した。
To this end, the invention provides for loading a limiter diode in the capacitive gap stage of a comb gear waveguide with low pass characteristics,
The impedance of the limiter diode is changed according to the microwave power propagating through the waveguide to transmit and block the microwave.

〔実施例〕〔Example〕

以下、本発明の実施例について説明する。まず、本実施
例では導波管として低域通過型の櫛の歯型の導波管を使
用する。この導波管11は、第9図(この第9図はダブル
リッジの例)に示すように、電波の伝搬方向に沿って内
壁上下に凹部11a、凸部11bを連続的に設けた形状の導波
管であり、凹部11aが誘導(コイル)成分L1として働
き、凸部11bが容量成分C1として働くので、その等価回
路は第9図(c)に示すようになり、ある周波数以上の
高域成分を遮断する低域通過型フィルタとなる。
Examples of the present invention will be described below. First, in this embodiment, a low pass comb-teeth type waveguide is used as the waveguide. As shown in FIG. 9 (an example of a double ridge in FIG. 9), this waveguide 11 has a shape in which concave portions 11a and convex portions 11b are continuously provided above and below the inner wall along the propagation direction of radio waves. Since it is a waveguide, the concave portion 11a acts as an inductive (coil) component L1 and the convex portion 11b acts as a capacitive component C1, the equivalent circuit is as shown in FIG. It is a low-pass filter that blocks the band components.

第1図はこのような導波管11を使用した本実施例の導波
管型ダイオードリミッタを示す図である。本実施例では
導波管11の内壁の凸部11bつまり容量性ギャップの部分
に同軸チョーク12を取り付け、このチョーク12によりPI
Nダイオード7を装填するように構成している。第1図
(c)はその等価回路を示す図であり、チョーク12は並
列接続の誘導成分L2として働き、ダイオード7はこれに
直列接続された状態となる。第1図(d)はこのダイオ
ード7の等価回路を示す図であり、Sはバイアスにより
切り換わるスイッチで、通常は実線で示す側に切り換わ
っていて、大電力のマイクロ波が印加すると破線で示す
側に切り換わるような動作を行う。
FIG. 1 is a diagram showing a waveguide type diode limiter of the present embodiment using such a waveguide 11. In this embodiment, the coaxial choke 12 is attached to the convex portion 11b of the inner wall of the waveguide 11, that is, the capacitive gap portion, and the PI
The N diode 7 is configured to be loaded. FIG. 1 (c) is a diagram showing an equivalent circuit thereof, in which the choke 12 acts as an inductive component L2 connected in parallel, and the diode 7 is connected in series to this. FIG. 1 (d) is a diagram showing an equivalent circuit of the diode 7, S is a switch which is switched by bias, and is normally switched to the side shown by a solid line, and when a microwave of high power is applied, it is shown by a broken line. The operation to switch to the side shown is performed.

この結果、本実施例のダイオードリミッタでは、導波管
11自体が基本的に高域成分をカットする特性を持つの
で、その遮断周波数を通過させるべきマイクロ波周波数
より若干高い周波数に設定しておけば、大電力の当該マ
イクロ波が印加した場合、ダイオード7のインピーダン
スが低下し短絡状態となってそのマイクロ波を遮断する
ので、全体の遮断周波数がそのマイクロ波の周波数以下
となったと等価となり、特性としては遮断周波数がより
低域側に移動した状態となる。第2図にその特性を示し
た。(a)が伝送特性、(b)が分離特性である。よっ
て、高次モードに対してはこれを充分減衰乃至遮断する
ので、不要な共振モードを持たずにマイクロ波伝送のス
イッチングを行うことができる。
As a result, in the diode limiter of this embodiment, the waveguide
Since 11 itself basically has the characteristic of cutting high-frequency components, setting it to a frequency slightly higher than the microwave frequency at which the cutoff frequency should pass allows the diode to be used when high-power microwaves are applied. Since the impedance of 7 is reduced and the microwave is cut off due to a short-circuited state, it is equivalent to that the entire cut-off frequency is below the frequency of the microwave, and the characteristic is that the cut-off frequency has moved to the lower frequency side. Becomes The characteristics are shown in FIG. (A) is a transmission characteristic and (b) is a separation characteristic. Therefore, high-order modes are sufficiently attenuated or blocked, and microwave transmission can be switched without having unnecessary resonance modes.

第3図はダイオードとして分離特性の良好なダイオード
7′と耐電力の充分なダイオード7″をを使用して多段
化したリミッタの例を示す図である。
FIG. 3 is a diagram showing an example of a limiter in which a diode 7'having a good isolation characteristic and a diode 7 "having a sufficient electric power resistance are used as the diodes to form a multistage structure.

〔発明の効果〕〔The invention's effect〕

以上から本発明によれば、ダイオードインピーダンスの
変化により遮断周波数のみが変化する特性となるので、
不要な共振モードを持つことはなく、基本伝送モード以
外のモードに対して充分な減衰乃至遮断を行うことがで
きる。従来のように波長に依存する分岐スタブや段間を
持たないので分離特性の広帯域化を図ることができる。
From the above, according to the present invention, the characteristic is that only the cutoff frequency changes due to the change in the diode impedance.
It does not have an unnecessary resonance mode, and can sufficiently attenuate or cut off modes other than the fundamental transmission mode. Since there is no branching stub or interstage that depends on wavelength as in the conventional case, it is possible to widen the band of the separation characteristic.

また、低域通過型フィルタとして集中定数型のものを使
用しており、使用帯域の波長に比べて小さな寸法で実現
が可能となり、小型化が可能となる。
In addition, a lumped constant filter is used as the low-pass filter, so that the filter can be realized with a size smaller than the wavelength of the used band, and the size can be reduced.

更に、遮断周波数以上の周波数成分に対して充分効果的
な減衰を行うことができ、マイクロ波発振器から発生す
る高次の不要発振成分を完全にカットできる。
Furthermore, it is possible to sufficiently effectively attenuate the frequency components above the cutoff frequency, and to completely eliminate the high-order unnecessary oscillation components generated from the microwave oscillator.

【図面の簡単な説明】[Brief description of drawings]

第1図(a)は本発明の一実施例のダイオードリミッタ
の正面図、(b)は断面図、(c)は等価回路の回路
図、(d)はPINダイオードの等価回路の回路図、第2
図は本実施例のダイオードリミッタの伝送特性と分離特
性を示す図、第3図(a)は別の実施例のダイオードリ
ミッタの正面図、(b)は断面図、(c)は等価回路の
回路図、第4図はレーダ装置の概略構成のブロック図、
第5図(a)は従来のダイオードリミッタの正面図、
(b)は断面図、(c)は等価回路図、第6図(a)は
従来の別のダイオードリミッタの正面図、(b)は断面
図、(c)は等価回路図、第7図は従来のダイオードリ
ミッタの伝送特性と分離特性を示す図、第8図(a)は
従来の更に別のダイオードリミッタの正面図、(b)は
断面図、(c)は等価回路図、第9図(a)は本実施例
で使用する低域通過型の櫛の歯型導波管の正面図、
(b)は断面、(c)は等価回路の回路図である。 1……マグネトロン、2……サーキュレータ、3……ア
ンテナ、4……リミッタ、5……受信機、6……導波
管、7……PINダイオード、8、9……分岐スタブ、10
……シボリ、11……低域通過型導波管、12……同軸チョ
ーク。
1A is a front view of a diode limiter according to an embodiment of the present invention, FIG. 1B is a sectional view, FIG. 1C is a circuit diagram of an equivalent circuit, and FIG. 1D is a circuit diagram of an equivalent circuit of a PIN diode. Second
FIG. 3 is a diagram showing the transmission characteristics and isolation characteristics of the diode limiter of this embodiment, FIG. 3 (a) is a front view of a diode limiter of another embodiment, (b) is a sectional view, and (c) is an equivalent circuit. Circuit diagram, FIG. 4 is a block diagram of a schematic configuration of a radar device,
FIG. 5 (a) is a front view of a conventional diode limiter,
6B is a sectional view, FIG. 6C is an equivalent circuit diagram, FIG. 6A is a front view of another conventional diode limiter, FIG. 6B is a sectional view, and FIG. 6C is an equivalent circuit diagram. Is a diagram showing transmission characteristics and isolation characteristics of a conventional diode limiter, FIG. 8 (a) is a front view of still another conventional diode limiter, (b) is a sectional view, (c) is an equivalent circuit diagram, and FIG. FIG. 1A is a front view of a low-pass comb tooth-shaped waveguide used in this embodiment,
(B) is a cross section and (c) is a circuit diagram of an equivalent circuit. 1 ... Magnetron, 2 ... Circulator, 3 ... Antenna, 4 ... Limiter, 5 ... Receiver, 6 ... Waveguide, 7 ... PIN diode, 8, 9 ... Branch stub, 10
…… Shibori, 11 …… Low-pass waveguide, 12 …… Coaxial choke.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】低域通過特性をもつ櫛の歯型導波管の容量
性ギャップ段にリミッタダイオードを装填し、該導波管
を伝搬するマイクロ波電力に応じて該リミッタダイオー
ドのインピーダンスを変化させ、該マイクロ波の伝送、
遮断を行わせるように構成したことを特徴とする低域フ
ィルタ導波管型ダイオードリミッタ。
1. A limiter diode is mounted in a capacitive gap stage of a comb-teeth type waveguide having a low-pass characteristic, and an impedance of the limiter diode is changed according to microwave power propagating through the waveguide. Transmission of the microwave,
A low-pass filter waveguide-type diode limiter characterized by being configured to cut off.
JP3897787A 1987-02-21 1987-02-21 Low-pass filter Waveguide type diode-limiter Expired - Fee Related JPH0785521B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP3897787A JPH0785521B2 (en) 1987-02-21 1987-02-21 Low-pass filter Waveguide type diode-limiter
GB8802414A GB2202683B (en) 1987-02-21 1988-02-03 Waveguide-type diode limiter for low-pass filtering
KR1019880001685A KR950002748B1 (en) 1987-02-21 1988-02-17 Waveguide-type diode limiter for low-pass filtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3897787A JPH0785521B2 (en) 1987-02-21 1987-02-21 Low-pass filter Waveguide type diode-limiter

Publications (2)

Publication Number Publication Date
JPS63206001A JPS63206001A (en) 1988-08-25
JPH0785521B2 true JPH0785521B2 (en) 1995-09-13

Family

ID=12540210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3897787A Expired - Fee Related JPH0785521B2 (en) 1987-02-21 1987-02-21 Low-pass filter Waveguide type diode-limiter

Country Status (3)

Country Link
JP (1) JPH0785521B2 (en)
KR (1) KR950002748B1 (en)
GB (1) GB2202683B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198952B2 (en) 2007-06-05 2012-06-12 Furuno Electric Co., Ltd. High frequency limiter

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2232303A (en) * 1989-05-23 1990-12-05 Marconi Gec Ltd Waveguide switch
JPH0722249B2 (en) * 1991-09-09 1995-03-08 株式会社東芝 Diode limiter
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JP5355354B2 (en) * 2009-11-11 2013-11-27 古野電気株式会社 Diode limiter, diode limiter device, and radar device
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Also Published As

Publication number Publication date
KR950002748B1 (en) 1995-03-24
GB2202683A (en) 1988-09-28
GB2202683B (en) 1991-04-03
JPS63206001A (en) 1988-08-25
GB8802414D0 (en) 1988-03-02
KR880010567A (en) 1988-10-10

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