EP0147417A4 - Reseau de laser a semi-conducteur a asservissement de phase et son procede de realisation. - Google Patents

Reseau de laser a semi-conducteur a asservissement de phase et son procede de realisation.

Info

Publication number
EP0147417A4
EP0147417A4 EP19840901854 EP84901854A EP0147417A4 EP 0147417 A4 EP0147417 A4 EP 0147417A4 EP 19840901854 EP19840901854 EP 19840901854 EP 84901854 A EP84901854 A EP 84901854A EP 0147417 A4 EP0147417 A4 EP 0147417A4
Authority
EP
European Patent Office
Prior art keywords
phase
semiconductor laser
laser array
making same
locked semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP19840901854
Other languages
German (de)
English (en)
Other versions
EP0147417A1 (fr
Inventor
Dan Botez
John Charles Connolly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of EP0147417A1 publication Critical patent/EP0147417A1/fr
Publication of EP0147417A4 publication Critical patent/EP0147417A4/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
EP19840901854 1983-06-17 1984-04-11 Reseau de laser a semi-conducteur a asservissement de phase et son procede de realisation. Ceased EP0147417A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50548983A 1983-06-17 1983-06-17
US505489 1983-06-17

Publications (2)

Publication Number Publication Date
EP0147417A1 EP0147417A1 (fr) 1985-07-10
EP0147417A4 true EP0147417A4 (fr) 1987-07-29

Family

ID=24010518

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19840901854 Ceased EP0147417A4 (fr) 1983-06-17 1984-04-11 Reseau de laser a semi-conducteur a asservissement de phase et son procede de realisation.

Country Status (5)

Country Link
EP (1) EP0147417A4 (fr)
JP (1) JPS60501634A (fr)
CA (1) CA1253608A (fr)
IT (1) IT1209541B (fr)
WO (1) WO1985000076A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3486103T2 (de) * 1983-12-01 1993-07-01 Trw Inc Halbleiterlaser.
JPS6167286A (ja) * 1984-09-07 1986-04-07 Sharp Corp 半導体レ−ザアレイ素子
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
JPS61222188A (ja) * 1985-02-28 1986-10-02 Sharp Corp 半導体レ−ザアレイ素子
US4638334A (en) * 1985-04-03 1987-01-20 Xerox Corporation Electro-optic line printer with super luminescent LED source
GB2186115B (en) * 1986-01-31 1989-11-01 Stc Plc Laser array
JPH0232582A (ja) * 1988-07-22 1990-02-02 Oki Electric Ind Co Ltd 集積型半導体レーザとその製造方法
AU2003264786A1 (en) * 2002-09-12 2004-04-30 Avanex Corporation Monolithic optical component

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5346594B2 (fr) * 1974-02-18 1978-12-14
US4023993A (en) * 1974-08-22 1977-05-17 Xerox Corporation Method of making an electrically pumped solid-state distributed feedback laser
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser
JPS5534482A (en) * 1978-09-01 1980-03-11 Nec Corp Manufacturing method for semiconductor laser
US4255717A (en) * 1978-10-30 1981-03-10 Xerox Corporation Monolithic multi-emitting laser device
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
US4347486A (en) * 1979-10-12 1982-08-31 Rca Corporation Single filament semiconductor laser with large emitting area
US4385389A (en) * 1980-07-14 1983-05-24 Rca Corporation Phase-locked CDH-LOC injection laser array
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
JPS5857771A (ja) * 1981-09-30 1983-04-06 Nec Corp 半導体レ−ザ
US4373989A (en) * 1981-11-30 1983-02-15 Beggs James M Administrator Of Controlled in situ etch-back

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 43, no. 12, December 1983, pages 1096-1098, American Institute of Physics, New York, US; D. BOTEZ et al.: "High-power phase-locked arrays of index-guided diode lasers" *
R.C.A. REVIEW, vol. 44, no. 1, March 1983, pages 64-100, Princeton, New Jersey, US; D. BOTEZ et al.: "Crystal growth of mode-stabilized semiconductor diode lasers by liquid-phase epitaxy" *
See also references of WO8500076A1 *

Also Published As

Publication number Publication date
IT8421015A0 (it) 1984-05-21
JPH0573075B2 (fr) 1993-10-13
JPS60501634A (ja) 1985-09-26
IT1209541B (it) 1989-08-30
CA1253608A (fr) 1989-05-02
EP0147417A1 (fr) 1985-07-10
WO1985000076A1 (fr) 1985-01-03

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): DE FR GB

17P Request for examination filed

Effective date: 19850611

A4 Supplementary search report drawn up and despatched

Effective date: 19870729

17Q First examination report despatched

Effective date: 19891010

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: GENERAL ELECTRIC COMPANY

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 19901227

RIN1 Information on inventor provided before grant (corrected)

Inventor name: CONNOLLY, JOHN, CHARLES

Inventor name: BOTEZ, DAN