EP0127735A1 - Photocathode et procédé de fabrication d'une telle cathode - Google Patents

Photocathode et procédé de fabrication d'une telle cathode Download PDF

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Publication number
EP0127735A1
EP0127735A1 EP84102976A EP84102976A EP0127735A1 EP 0127735 A1 EP0127735 A1 EP 0127735A1 EP 84102976 A EP84102976 A EP 84102976A EP 84102976 A EP84102976 A EP 84102976A EP 0127735 A1 EP0127735 A1 EP 0127735A1
Authority
EP
European Patent Office
Prior art keywords
layer
base
photosensitive layer
der
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP84102976A
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German (de)
English (en)
Other versions
EP0127735B1 (fr
Inventor
Werner Dr. Dipl.-Ing. Scherber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dornier System GmbH
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Dornier System GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dornier System GmbH filed Critical Dornier System GmbH
Priority to AT84102976T priority Critical patent/ATE30986T1/de
Publication of EP0127735A1 publication Critical patent/EP0127735A1/fr
Application granted granted Critical
Publication of EP0127735B1 publication Critical patent/EP0127735B1/fr
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3425—Metals, metal alloys

Definitions

  • the invention relates to a photodetector for converting infrared radiation into an electrical signal, which is characterized by simple Herstellun g stechnik, highest geometric resolution, high contrast and low dark current.
  • the detector works on the principle of photofield emission and offers advantageous and new uses for photocells, photomultipliers, image converters and electron beam tubes (Vidicons).
  • the incident photons must have at least that
  • the work function by surface treatment is e.g. Coating with cesium or cesium compounds reduced to values of about 1 eV, so that there is also sensitivity to visible light and partly in the adjacent near infrared.
  • the well-known electrical peak effect is used in field-assisted photoemission. Due to the high field strengths occurring at the tips, the height and width of the potential barrier on the solid surface is reduced. The step-wise dependence of the potential energy of an electron on the distance from the metal surface without an electric field is deformed to a lower wall in the presence of a strong electric field. Due to the tunnel effect, electrons can also leave the solid whose energy is less than the work function. In metals, electrons are emitted from states just below the Fermi level. The field electron microscope is a known practical application of this effect.
  • Embodiments of the photodetector according to the invention and a production method for its photosensitive layer are the subject of subclaims.
  • the transport of the photoelectrons to the tip is fundamentally different in the whisker structure (needle structure) according to the invention than in macroscopic semiconductor crystals. Since there is no band gap in metals, the lifespan of the photoelectron is considerably shorter, ie it relaxes in a short time and releases all of its excitation energy to the grid until it is in equilibrium with the other electrons.
  • the average free path length is also limited to typical values of 100 X by the slim shape of the needles.
  • the average energy loss per scattering of the electron on a lattice atom or on the surface is about 0.01 eV at room temperature.
  • the emission behavior of the metal structure according to the invention is shaped by another effect which can prove to be very important for image conversion purposes.
  • the part of the excited Electrons which thermalize without reaching the tip, give off all their energy to the metal grid and thereby heat it. With increasing temperature, the number of electrons increases in an energy interval above the average electron energy (broadening of the Fermi energy distribution). These thermally excited electrons have an increased tunneling probability in the potential threshold, the total emission current thereby increases significantly.
  • the G eticianemissionsstrom consists of directly emitted photoelectrons (photoemission) and indirectly emitted by heating electrons (thermal emission), bringing the total result is a very high sensitivity.
  • the relative proportion of the two types of emissions can be specifically influenced by dimensioning the structure, selecting the material and operating temperature and adapted to the respective task.
  • the optical emission is advantageous for fast responding detectors, while the thermal induced emission is particularly suitable for image acquisition with mechanical or electronic scanning due to its storage and accumulation effect.
  • the dark current behavior in the metal whisker structure is considerably more favorable than in the case of PFE semiconductor cathodes, since metals do not show the phenomenon of the surface states and the high diffusion lengths due to the missing band gap.
  • the dark current of the photocathode according to the invention is determined solely by the external field, and can therefore be adjusted very sensitively to an optimal low level by means of the pulling voltage or an auxiliary voltage. Since there is neither a cut-off condition nor reflection losses, incident photons can be detected by optical and thermal excitation with maximum quantum efficiency. The sensitivity threshold is limited solely by noise effects.
  • the surface resolution of a metal structure cathode is incomparably higher than that of conventional detectors with specific elements such as photodiode arrays, PFE semiconductor cathodes or polycrystalline coatings. Since the needle distances are smaller than the light wavelength, the resolving power of the detector according to the invention is even basically even better than that of optical imaging. In real systems, where the resolution is limited anyway by other components, the microscopic character of the needle structure has a positive effect in other respects.
  • microstructures of the type described as an area emitter or as an image converter requires that the Geometry of the needles, i.e. needle height, tip radius and tip spacing can be formed to the highest degree evenly. It has now been found that this difficult task can be solved in two steps with a relatively simple electrochemical process, which is described below.
  • a thin, porous oxide layer is produced on a suitable conductive substrate by anodic oxidation.
  • metallic nuclei are generated in the oxide pores, which eventually grow in the form of whiskers beyond the oxide surface. Similar processes are known in the field of the production of solar absorber layers (e.g. DE-AS 26 16 662, DE-AS 27 05 337).
  • the electrolyte must contain at least one oxygen-containing compound, preferably dilute acid such as sulfuric acid, phosphoric acid, tartaric acid or salt solutions, alcohols, etc., in order to be able to form the oxide.
  • the electrolyte must have a certain redissolving power against the oxide under the influence of the anodic field. have.
  • an oxide layer of about O, 5 / um thick starch or from which has in uniform distribution forms cylindrical pores.
  • the pores are to be regarded as current paths, which allow the oxide-metal interface to progress continuously into the substrate. In the pores is a strong re-dissolution of the oxide during Anodmaschinesvorgan g it instead.
  • a thin oxide skin forms at the base of the pore, the barrier layer, a few nm thick. This layer is comparable to the thin anodic oxide skin, which arises in non-redissolving electrolytes and whose thickness grows in proportion to the voltage.
  • This known per se anodizing process which is used in the art, for example, during anodizing of aluminum materials, can be used for forming the oxide mask Inventive g efflessen very advantageous because extremely homogeneous and reproducible pore structures.
  • the pore diameter, oxide thickness and pore spacing can be set in a systematic manner by means of temperature, concentration and current density for a given system of electrolyte and substrate.
  • Figure 1 shows schematically a cross section through the photosensitive layer of a semiconductor p hot field emitter 2 according to the prior art.
  • h 20 / ⁇ m.
  • the absorption length W which corresponds to the penetration depth of the light, is with 100 / um approximately as large as the diffusion length 1 (range of the photoelectrons). Further properties of the photo field emitter are described in the assessment of the prior art.
  • FIG. 2 shows a schematic cross section through the photocathode 8 of a photodetector according to the invention.
  • a base metal 10 there is a porous oxide mask 12, in the pore channels 13 of which metal whiskers (rods or needles) 14 are deposited, which protrude beyond the oxide surface 16.
  • metal whiskers rods or needles
  • the absorption length W is then approximately 1 to 2 / um.
  • the condition W> 1 is useful when using a metal substrate 10.
  • the metal whiskers 14 touch the base metal 10.
  • the metal structure shown can be used as a photo-emitting cathode.
  • the barrier layer usually present after the oxidation between the base metal 10 and the rods 14 has been removed so that the needles 14 are in direct galvanic contact with the conductive substrate 10.
  • the selective dissolution of the barrier layer is achieved by anodic etching in a non-oxidizing acid which does not or only weakly attacks the substrate 10.
  • the metal structure according to the invention is to be used as a photosensitive retina in a vidicon tube, it is preferable not to remove the barrier layer, but rather to strengthen it.
  • the needles 14 then form a large number of specific capacitors with respect to the substrate 10, which charge positively on the needle side when exposed to photons due to the electron emission.
  • FIG. 3 shows a scanning electron microscope (SEM) image of the oxide mask 12 in cross section.
  • the pore channels 13 are greatly expanded by etching for better visibility.
  • the magnification is 24,000.
  • the large number of pores 13 perpendicular to the oxide surface 16 can be seen.
  • FIG. 4 shows an SEM image of a finished metal structure photocathode 8 in a magnification of 20,000 times. The surface was covered with a thin layer of gold to make the needles more recognizable. This creates the matchstick-like rounding of itself pointed needles 18. The carpet-like structure can be seen, which is formed by the large number of adjacent rods 14.
  • FIG. 5 shows a photodetector 20 according to the invention, which is designed as an image converter element with secondary electron amplification and a fluorescent screen.
  • An IR window 24, an IR-transparent base 26, the photosensitive layer 28 consisting of oxide mask 12 and the needles 14, a multi-microchannel amplifier 30 and a fluorescent screen 32 are located in a vacuum-tight socket 22 one behind the other in the direction of light incidence.
  • An object field is imaged on the photocathode 26, 28 with a transparent substrate 26 by means of infrared optics (not shown).
  • the secondary electron multiplier 30 is at anode potential.
  • the accelerated and amplified electron stream then strikes the fluorescent screen 32.
  • the resulting image is observed directly or processed further by means of fiber optics, light amplifier tubes or electronically.
  • Figure 6 shows a photodetector 33 for performing a previously unknown image converting method, in which the effect of the invented g efflessen photocathode is directly coupled to a plasma display element.
  • an IR window 36 and an anode space 37 lie one behind the other in the direction of light incidence with a grid anode 38, a photocathode 40, consisting of photosensitive layer 28 on a metallic and base 10, an insulating layer 41, a plasma gas space 42 and a viewing window 44 with an electrically conductive coating 48.
  • the photocathode 40 is ment in this case as a multielement - detector box trained.
  • the detector elements are electrically insulated from one another and from the plasma gas space 42 (41) and have a size of approximately 1 mm 2 .
  • the photosensitive layer 28 of the detector field is directed towards the object and lies opposite a grid anode 38.
  • the gas space 42 on the back of the detector field is delimited by the viewing window 44, which has an electrically conductive transparent coating 48 and functions as a counter electrode (plasma electrode).
  • the anode space 37 is evacuated, and there is gas at low pressure, for example 0.1 mbar, in the plasma space 42.
  • a voltage is applied between anode 38 and counter electrode 48, which is composed of a DC voltage component and a superimposed AC voltage; the detector field 40 is not connected.
  • the DC voltage component is regulated in such a way that a low dark current is present.
  • the AC voltage has the task of holding the potential of the detector field 40 in the vicinity of the potential of the counter electrode 48 as long as no radiation takes place, which is readily due to the different distances and the dielectric properties of the detector successful. If a detector element is irradiated, it emits electrons and charges itself positively, ie the potential difference to the counter electrode 48 increases and the ignition voltage of the plasma is exceeded. The plasma, once ignited, reduces the internal resistance in the gas space 42, so that the plasma extinguishes again if the radiation is not continuously continued.
  • FIG. 7 shows a recording system (camera) 50 with a photodetector 52 according to the invention with scanning on the detector side.
  • An optical-mechanical scanning system 51 is connected upstream of the photodetector 52.
  • the photodetector 52 consists of a vacuum-tight housing 54, an IR window 56, a grid anode 58 and the photosensitive layer 28 on a metal substrate 62.
  • the optomechanical scanning system (raster system) 51 conducts the radiation Object field on the detector field 28, but not simultaneously as in an optical image, but for example in such a way that only a small section of the field of view is passed over the detector field 28. In this way, the signals of the Object field in time successively output by the detector field 28 and can then be displayed again on a display device by means of a signal processor.
  • FIG. 8 shows a recording system 64 with electron beam scanning (vidicon picture tube).
  • the photodetector layer according to the invention serves as a retina (photocathode).
  • the object field (left, not shown) is imaged onto the retina 60 from the rear by means of infrared optics (not shown).
  • 1 / 25th-second positive charging of the retina 60 is done by photoelectron emission proportional to Einstrahlun g sintenstician at the individual pixels.
  • the photoelectrons are sucked off at the grid anode 74.
  • the electron scanning beam 78 erases the charge in time with the frame rate and places the surface 60 at the potential of the hot cathode (in 76).
  • creating a charging proportional Verschiebun g sstrom in the retina 60 junction capacitance
  • a video signal 82 is stored and read out again on a picture monitor.
  • the incoming parameters retinal capacity, retinal conductivity, sampling frequency, beam intensity, potentials etc. must of course be carefully considered be coordinated.
  • the substrate is first degreased in a conventional manner in organic or alkaline media, then pickled in 5% sodium hydroxide solution at 60 ° C. for 5 minutes, rinsed in water and briefly immersed in 10% nitric acid at room temperature and rinsed clean again.
  • the oxide layer is built up in 10% phosphoric acid at a bath temperature of 18 ° C and an alternating voltage of 16 volts in 20 minutes.
  • the barrier layer is etched, in a solution of 60 a / 1 MgC1 2 using 6 volt AC voltage for a few minutes and then immediately thoroughly washed.
  • the metal structure is created in a bath of 70 g / l NiSO 4 .6H 2 O and 20 g / 1 boric acid at room temperature with an alternating voltage of 12 volts in 15 minutes. After sor g- der thorough rinsing in cascade, last at least 10 minutes in running deionised water, the layer of slightly warmed air is dried and kept under vacuum as possible immediately or further processed (g esealt).

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
EP84102976A 1983-05-03 1984-03-17 Photocathode et procédé de fabrication d'une telle cathode Expired EP0127735B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT84102976T ATE30986T1 (de) 1983-05-03 1984-03-17 Photokathode und verfahren zu deren herstellung.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19833316027 DE3316027A1 (de) 1983-05-03 1983-05-03 Photodetektor
DE3316027 1983-05-03

Publications (2)

Publication Number Publication Date
EP0127735A1 true EP0127735A1 (fr) 1984-12-12
EP0127735B1 EP0127735B1 (fr) 1987-11-19

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EP84102976A Expired EP0127735B1 (fr) 1983-05-03 1984-03-17 Photocathode et procédé de fabrication d'une telle cathode

Country Status (4)

Country Link
US (1) US4591717A (fr)
EP (1) EP0127735B1 (fr)
AT (1) ATE30986T1 (fr)
DE (1) DE3316027A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608842A1 (fr) * 1986-12-22 1988-06-24 Commissariat Energie Atomique Transducteur photo-electronique utilisant une cathode emissive a micropointes
EP0497244A1 (fr) * 1991-01-30 1992-08-05 Communaute Economique Europeenne (Cee) Caméra ultrarapide pour visualiser le profil d'intensité d'une impulsion laser

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US4682032A (en) * 1986-01-17 1987-07-21 Itek Corporation Joule-Thomson cryostat having a chemically-deposited infrared detector and method of manufacture
US6114697A (en) * 1986-07-14 2000-09-05 Lockheed Martin Corporation Bandgap radiation detector
US6111254A (en) * 1986-07-14 2000-08-29 Lockheed Martin Corporation Infrared radiation detector
DE3642749A1 (de) * 1986-12-15 1988-06-23 Eltro Gmbh Oberflaechen fuer elektrische entladungen
CA1272504A (fr) * 1986-11-18 1990-08-07 Franz Prein Surface pour decharge electrique
US6201242B1 (en) 1987-08-05 2001-03-13 Lockheed Martin Corporation Bandgap radiation detector
GB8816689D0 (en) * 1988-07-13 1988-08-17 Emi Plc Thorn Method of manufacturing cold cathode field emission device & field emission device manufactured by method
DE3908627A1 (de) * 1989-03-16 1990-09-20 Bodenseewerk Geraetetech Infrarotdetektor
US5144149A (en) * 1991-01-22 1992-09-01 Frosch Henry A Electrical signal to thermal image converter
CH690144A5 (de) * 1995-12-22 2000-05-15 Alusuisse Lonza Services Ag Strukturierte Oberfläche mit spitzenförmigen Elementen.
GB9620037D0 (en) * 1996-09-26 1996-11-13 British Tech Group Radiation transducers
DE19983159B4 (de) * 1998-04-30 2006-06-14 Asahi Kasei Kabushiki Kaisha Verfahren zur Herstellung eines Funktionselementes zur Verwendung in einer elektrischen, elektronischen oder optischen Vorrichtung
US6810575B1 (en) * 1998-04-30 2004-11-02 Asahi Kasai Chemicals Corporation Functional element for electric, electronic or optical device and method for manufacturing the same
FR2786026A1 (fr) * 1998-11-17 2000-05-19 Commissariat Energie Atomique Procede de formation de reliefs sur un substrat au moyen d'un masque de gravure ou de depot
US6624416B1 (en) * 2001-07-26 2003-09-23 The United States Of America As Represented By The Secretary Of The Navy Uncooled niobium trisulfide midwavelength infrared detector
WO2003043045A2 (fr) * 2001-11-13 2003-05-22 Nanosciences Corporation Photocathode
US7683340B2 (en) 2006-10-28 2010-03-23 Integrated Sensors, Llc Plasma panel based radiation detector
US20100187413A1 (en) * 2009-01-29 2010-07-29 Baker Hughes Incorporated High Temperature Photodetectors Utilizing Photon Enhanced Emission
US9529099B2 (en) 2012-11-14 2016-12-27 Integrated Sensors, Llc Microcavity plasma panel radiation detector
US9964651B2 (en) 2013-03-15 2018-05-08 Integrated Sensors, Llc Ultra-thin plasma panel radiation detector
US9551795B2 (en) 2013-03-15 2017-01-24 Integrated Sensors, Llc Ultra-thin plasma radiation detector
US10782014B2 (en) 2016-11-11 2020-09-22 Habib Technologies LLC Plasmonic energy conversion device for vapor generation
US20210384871A1 (en) * 2018-10-16 2021-12-09 Hamamatsu Photonics K.K. Vacuum tube for amplifier circuit, and amplifier circuit using same
EP3758040A1 (fr) * 2019-06-26 2020-12-30 Technical University of Denmark Photo-cathode pour un système à vide

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DE2616662B1 (de) * 1976-04-15 1977-07-07 Dornier System Gmbh Verfahren zur herstellung einer selektiven solarabsorberschicht aus aluminium
US4140941A (en) * 1976-03-02 1979-02-20 Ise Electronics Corporation Cathode-ray display panel
DE2715470B2 (de) * 1977-04-06 1980-10-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Fotokathode für elektroradiographische Apparate und Verfahren zu ihrer Herstellung

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US4140941A (en) * 1976-03-02 1979-02-20 Ise Electronics Corporation Cathode-ray display panel
DE2616662B1 (de) * 1976-04-15 1977-07-07 Dornier System Gmbh Verfahren zur herstellung einer selektiven solarabsorberschicht aus aluminium
DE2715470B2 (de) * 1977-04-06 1980-10-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Fotokathode für elektroradiographische Apparate und Verfahren zu ihrer Herstellung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608842A1 (fr) * 1986-12-22 1988-06-24 Commissariat Energie Atomique Transducteur photo-electronique utilisant une cathode emissive a micropointes
EP0275769A1 (fr) * 1986-12-22 1988-07-27 Commissariat A L'energie Atomique Transducteur photo-électronique utilisant une cathode émissive à micropointes
EP0497244A1 (fr) * 1991-01-30 1992-08-05 Communaute Economique Europeenne (Cee) Caméra ultrarapide pour visualiser le profil d'intensité d'une impulsion laser
WO1992014257A1 (fr) * 1991-01-30 1992-08-20 Communaute Economique Europeenne (Cee) Camera ultrarapide pour visualiser le profil d'intensite d'une impulsion laser
US5362959A (en) * 1991-01-30 1994-11-08 European Economic Community (Eec) Ultrarapid camera for visulaizing the intensity profile of a laser

Also Published As

Publication number Publication date
DE3316027C2 (fr) 1987-01-22
DE3316027A1 (de) 1984-11-08
EP0127735B1 (fr) 1987-11-19
US4591717A (en) 1986-05-27
ATE30986T1 (de) 1987-12-15

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