EP0122129B1 - Process for sealing anodised aluminium - Google Patents
Process for sealing anodised aluminium Download PDFInfo
- Publication number
- EP0122129B1 EP0122129B1 EP84302358A EP84302358A EP0122129B1 EP 0122129 B1 EP0122129 B1 EP 0122129B1 EP 84302358 A EP84302358 A EP 84302358A EP 84302358 A EP84302358 A EP 84302358A EP 0122129 B1 EP0122129 B1 EP 0122129B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- acid
- process according
- sealing
- bath
- smut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000004411 aluminium Substances 0.000 title claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 239000000654 additive Substances 0.000 claims abstract description 35
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 18
- YDSWCNNOKPMOTP-UHFFFAOYSA-N mellitic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(O)=O)=C(C(O)=O)C(C(O)=O)=C1C(O)=O YDSWCNNOKPMOTP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 14
- QUBQYFYWUJJAAK-UHFFFAOYSA-N oxymethurea Chemical compound OCNC(=O)NCO QUBQYFYWUJJAAK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229950005308 oxymethurea Drugs 0.000 claims abstract description 14
- 150000001491 aromatic compounds Chemical class 0.000 claims abstract description 11
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical class OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims abstract description 10
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 claims abstract description 9
- 230000000996 additive effect Effects 0.000 claims abstract description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 51
- 239000002253 acid Substances 0.000 claims description 28
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 15
- 229910021645 metal ion Inorganic materials 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 15
- 239000004202 carbamide Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims description 11
- -1 ethylenediamino tetramethylene Chemical group 0.000 claims description 10
- 239000000047 product Substances 0.000 claims description 10
- 239000012736 aqueous medium Substances 0.000 claims description 8
- 150000003009 phosphonic acids Chemical class 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 6
- 150000002989 phenols Chemical class 0.000 claims description 6
- 229920002134 Carboxymethyl cellulose Polymers 0.000 claims description 5
- 235000010948 carboxy methyl cellulose Nutrition 0.000 claims description 5
- XQRLCLUYWUNEEH-UHFFFAOYSA-N diphosphonic acid Chemical compound OP(=O)OP(O)=O XQRLCLUYWUNEEH-UHFFFAOYSA-N 0.000 claims description 5
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical class CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 4
- 229930003836 cresol Chemical class 0.000 claims description 4
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical class C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 claims description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 229920001353 Dextrin Polymers 0.000 claims description 3
- 239000004375 Dextrin Substances 0.000 claims description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 3
- 150000007513 acids Chemical class 0.000 claims description 3
- 125000006267 biphenyl group Chemical group 0.000 claims description 3
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 3
- 239000008112 carboxymethyl-cellulose Substances 0.000 claims description 3
- 235000019425 dextrin Nutrition 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000002609 medium Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- KMDMOMDSEVTJTI-UHFFFAOYSA-N 2-phosphonobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)P(O)(O)=O KMDMOMDSEVTJTI-UHFFFAOYSA-N 0.000 claims description 2
- 229930185605 Bisphenol Natural products 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- JJHHIJFTHRNPIK-UHFFFAOYSA-N Diphenyl sulfoxide Chemical compound C=1C=CC=CC=1S(=O)C1=CC=CC=C1 JJHHIJFTHRNPIK-UHFFFAOYSA-N 0.000 claims description 2
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 239000004305 biphenyl Substances 0.000 claims description 2
- 235000010290 biphenyl Nutrition 0.000 claims description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- WLWKIJKUDWYINL-UHFFFAOYSA-N cyclohexane-1,1,2,2,3,3-hexacarboxylic acid Chemical class OC(=O)C1(C(O)=O)CCCC(C(O)=O)(C(O)=O)C1(C(O)=O)C(O)=O WLWKIJKUDWYINL-UHFFFAOYSA-N 0.000 claims description 2
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical compound C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 claims description 2
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 claims description 2
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 claims description 2
- 229920005610 lignin Polymers 0.000 claims description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 2
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 claims description 2
- 229920003169 water-soluble polymer Polymers 0.000 claims description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- GPCTYPSWRBUGFH-UHFFFAOYSA-N (1-amino-1-phosphonoethyl)phosphonic acid Chemical compound OP(=O)(O)C(N)(C)P(O)(O)=O GPCTYPSWRBUGFH-UHFFFAOYSA-N 0.000 claims 1
- IDYCJOKDHJLCGO-UHFFFAOYSA-N (amino-phenyl-phosphonomethyl)phosphonic acid Chemical compound OP(=O)(O)C(P(O)(O)=O)(N)C1=CC=CC=C1 IDYCJOKDHJLCGO-UHFFFAOYSA-N 0.000 claims 1
- GPXCJKUXBIGASD-UHFFFAOYSA-N 1-phosphonobutane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(C(O)=O)C(C(O)=O)P(O)(O)=O GPXCJKUXBIGASD-UHFFFAOYSA-N 0.000 claims 1
- QLGZQPQQPUMNBD-UHFFFAOYSA-N [1-(butylamino)-1-phosphonoethyl]phosphonic acid Chemical compound CCCCNC(C)(P(O)(O)=O)P(O)(O)=O QLGZQPQQPUMNBD-UHFFFAOYSA-N 0.000 claims 1
- SCOXZKRXKMRCCY-UHFFFAOYSA-N [1-(dimethylamino)-1-phosphonoethyl]phosphonic acid Chemical compound CN(C)C(C)(P(O)(O)=O)P(O)(O)=O SCOXZKRXKMRCCY-UHFFFAOYSA-N 0.000 claims 1
- XCVNDBIXFPGMIW-UHFFFAOYSA-N n-ethylpropan-1-amine Chemical compound CCCNCC XCVNDBIXFPGMIW-UHFFFAOYSA-N 0.000 claims 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 claims 1
- 238000007743 anodising Methods 0.000 abstract description 8
- 238000005265 energy consumption Methods 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 description 13
- 239000010410 layer Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical class CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000012141 concentrate Substances 0.000 description 6
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000001117 sulphuric acid Substances 0.000 description 5
- 235000011149 sulphuric acid Nutrition 0.000 description 5
- 239000008399 tap water Substances 0.000 description 5
- 235000020679 tap water Nutrition 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid group Chemical group C(CC(O)(C(=O)O)CC(=O)O)(=O)O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 159000000003 magnesium salts Chemical class 0.000 description 3
- 229940078494 nickel acetate Drugs 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- 235000005985 organic acids Nutrition 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000004580 weight loss Effects 0.000 description 3
- 239000000080 wetting agent Substances 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000006172 buffering agent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 229910001425 magnesium ion Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Chemical class OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 235000010755 mineral Nutrition 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- SAJOHMPTNBCJQU-UHFFFAOYSA-N (1-amino-1-phosphonohexyl)phosphonic acid Chemical compound CCCCCC(N)(P(O)(O)=O)P(O)(O)=O SAJOHMPTNBCJQU-UHFFFAOYSA-N 0.000 description 1
- IQVLXQGNLCPZCL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 2,6-bis[(2-methylpropan-2-yl)oxycarbonylamino]hexanoate Chemical compound CC(C)(C)OC(=O)NCCCCC(NC(=O)OC(C)(C)C)C(=O)ON1C(=O)CCC1=O IQVLXQGNLCPZCL-UHFFFAOYSA-N 0.000 description 1
- ZCOMURCDMLBWOR-UHFFFAOYSA-N (hydroxy-phenyl-phosphonomethyl)phosphonic acid Chemical compound OP(=O)(O)C(P(O)(O)=O)(O)C1=CC=CC=C1 ZCOMURCDMLBWOR-UHFFFAOYSA-N 0.000 description 1
- NAOLWIGVYRIGTP-UHFFFAOYSA-N 1,3,5-trihydroxyanthracene-9,10-dione Chemical compound C1=CC(O)=C2C(=O)C3=CC(O)=CC(O)=C3C(=O)C2=C1 NAOLWIGVYRIGTP-UHFFFAOYSA-N 0.000 description 1
- SDGNNLQZAPXALR-UHFFFAOYSA-N 3-sulfophthalic acid Chemical compound OC(=O)C1=CC=CC(S(O)(=O)=O)=C1C(O)=O SDGNNLQZAPXALR-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical class COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910000553 6063 aluminium alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 0 CCN(C)**(*)* Chemical compound CCN(C)**(*)* 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- 239000002879 Lewis base Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- YSMRWXYRXBRSND-UHFFFAOYSA-N TOTP Chemical compound CC1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C)OC1=CC=CC=C1C YSMRWXYRXBRSND-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- QNSOHXTZPUMONC-UHFFFAOYSA-N benzene pentacarboxylic acid Natural products OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C(C(O)=O)=C1C(O)=O QNSOHXTZPUMONC-UHFFFAOYSA-N 0.000 description 1
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- ZFXVRMSLJDYJCH-UHFFFAOYSA-N calcium magnesium Chemical class [Mg].[Ca] ZFXVRMSLJDYJCH-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- RZIPTXDCNDIINL-UHFFFAOYSA-N cyclohexane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCCC1(C(O)=O)C(O)=O RZIPTXDCNDIINL-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical group OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001447 ferric ion Inorganic materials 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000004312 hexamethylene tetramine Substances 0.000 description 1
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- DKPHLYCEFBDQKM-UHFFFAOYSA-H hexapotassium;1-phosphonato-n,n-bis(phosphonatomethyl)methanamine Chemical compound [K+].[K+].[K+].[K+].[K+].[K+].[O-]P([O-])(=O)CN(CP([O-])([O-])=O)CP([O-])([O-])=O DKPHLYCEFBDQKM-UHFFFAOYSA-H 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 150000007527 lewis bases Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 description 1
- 150000004780 naphthols Chemical class 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
- C25D11/246—Chemical after-treatment for sealing layers
Definitions
- This invention relates to a novel process for the treatment of anodised aluminium surfaces by immersing them in aqueous liquors.
- the resistance of the surface of aluminium and aluminium alloys to corrosion and abrasion is conventionally improved by subjecting them to anodic oxidation so as to form a substantially anhydrous layer of adherent aluminium oxide.
- Surfaces which have been subjected to this treatment are referred to as having been "anodised".
- the anodising treatment can be carried out in a variety of ways, for example, by the application of direct current in dilute aqueous solutions of sulphuric acid, or organic acids such as oxalic acid or mixtures thereof with sulphuric acid. These coatings can be coloured by immersion in a solution of a suitable dye or by treatment with alternating current in an electrolyte containing metal salts.
- the anodising can be carried out in solutions of organic acids such as sulphophthalic acid or sulphosalicyclic acid or mixtures thereof with sulphuric acid.
- the oxidised layer formed by these anodising treatments has a porous structure and is insufficiently durable to fully protect the metal surface.
- the anodised metal is usually subjected to a further treatment known as sealing.
- Sealing is usually carried out by immersing the metal in hot or boiling water, which process is believed to cause the hydration of the substantially anhydrous aluminium oxide in the anodised layer thus causing a swelling of that layer which serves to seal the pores in its structure. Whatever the mechanism, the durability of the anodised surfaces is considerably increased by sealing.
- the pH of a sealing bath is normally maintained within the range 5.5 to 6.5 and sealing times of from 2 to 4 minutes per micrometer of thickness of the anodised layer are required to obtain adequate sealing (see for example The Technology of Anodising Aluminium by A. W. Brace and P. G. Sheasby publishers Technicopy Ltd., 2nd edition, 1979, p 224-5.
- anti-smutting additives a variety of additives to the sealing bath which are claimed to inhibit the formation of smut have been described, which additives will hereinafter be referred to as "anti-smutting additives".
- anti-smutting additives examples include the compounds disclosed in British Patents 1265465, 1302288, 1368336, 1398589, 1419957, 1574161 and British Patent Application 2104921.
- British Patent 1574161 mentions that the sealing bath, in which the additives described therein are used, may have a pH of 4-8.
- our invention provides a process for the hydrothermal sealing of anodised aluminium which comprises immersing the anodised surface in an aqueous medium at a temperature of at least 80°C wherein satisfactory sealing is effected without the formation of any substantial quantity of smut whilst immersing the surface in the aqueous medium for a period of not more than 2 minutes per micrometer of the thickness of the anodised layer and maintaining the pH of the aqueous medium at a value of at least 7.0 and ensuring that the medium contains an effective quantity of a smut inhibiting additive.
- the additives which are useful in the process of this invention are "anti-smutting additives" in that they are selected so as to avoid the formation of smut during the novel alkaline sealing process. They are distinguished from the known "anti-smutting additives" in that not all of the known additives are effective in the novel alkaline sealing process and in that the smut-inhibiting additives need not be effective as anti-smutting additives in the acidic sealing processes of the prior art. For reasons of clarity the term "smut-inhibiting additives" will be used hereafter in relation to those additives which are effective in the novel sealing process of this invention.
- the sealing process of the present invention is advantageous in that it is carried out under such conditions that a sealed coating of acceptable quality which is free from smut is obtained in a shorter time than is attainable using comparable known sealing processes. Since the sealing bath must be maintained at an elevated temperature the energy required of the process is considerably reduced without the need to chemically or mechanically remove the smut.
- the present invention provides a sealing process wherein satisfactory sealing is achieved in not more than 2 minutes per micrometer of thickness of the anodised layer advantageously less than 1.5 minutes, preferably less than 1.25 and more preferably less than 1.00 minutes per micrometer at bath temperatures of 95°C or above. The rate of sealing may be less than this if the process is carried out at temperatures of less than 95°C.
- the temperature of the sealing bath will be at least 80°C since the rate of sealing at lower temperatures than this is unacceptably slow.
- the seating temperature is preferably between 95°C and the boiling point of the bath. Pressurised systems in which the temperature may be above 100°C, e.g. 110°C or even 115°C may be employed.
- a smut-free product is one upon which no smut is visually detectable. Products which are deemed “smut-free” may carry small particles of smut which are detectable by careful scrutiny, but which do not detract from the appearance of.the sealed article as a whole.
- the process of the present invention is carried out under such conditions so as to seal the product to the desired degree.
- Anodised aluminium which is to be used in architecture and exposed to weathering will normally be sealed as efficiently as is practicable in order to maximise its corrosion resistance.
- the quality of sealing may be evaluated using one or more of three classes of standard tests; the weight loss in acid test, the dyespot test and the conductivity test. These tests can be carried out using the following techniques.
- the criterion used to evaluate the quality of the seal is an at least adequate performance in the weight loss in acid test.
- the pH of the sealing bath is at least 7.0 and more preferably at least 7.5 or 8.0. Higher pH's promote the rapid sealing of the anodised coating but may have detrimental effects upon the quality of that coating and also may encourage the formation of smut.
- the maximum pH of the bath will vary with its composition and the temperature of operation, but will generally be below 10.0, preferably below 9.5 and most preferably below 9.0. Thus, preferably, the pH of the sealing bath will be maintained at a value in the range 7.0 to 9.0, e.g. 7.5 to 8.5.
- the compounds which are effective smut-inhibiting agents in the sealing process of the present invention must be water soluble and must not adversely effect the quality of the seal.
- Compounds which inhibit crystal growth in alkaline aqueous media when present in threshold quantities e.g. from 1 to 1000 ppm are potentially valuable as smut-inhibiting additives although not all known threshold treatment agents are useful as smut-inhibiting additives in the process of the present invention either because they do not inhibit smut formation or because they retard the sealing process.
- Smut inhibiting additives which may be useful in the process of the present invention can be selected from the group comprising dextrins (including commercial dextrins, especially those having a viscosity of 50 to 400 cP in 50% by weight solution at 20°C as measured with a Brookfield rotary viscometer, e.g.
- acrylic acid, methacrylic acid and water soluble polymers derived therefrom especially those polymers having a specific viscosity of up to 0.75 cP measured at 20°C in 2N caustic soda and at a concentration of 0.7%, e.g.
- acids such as cycloaliphatic or aromatic polycarboxylic acid having from 4 to 6 carboxylic acid groups per molecule such as benzene penta carboxylic acid, benzene tetracarboxylic acid, benzene hexacarboxylic acid, cyclohexane tetracarboxylic acid and cyclohexane hexacarboxylic acid (in any of their various isomeric forms) or a water soluble salt thereof, e.g.
- alkali metal, alkaline earth metal ammonium and alkanolamine salts especially those described in British Patent 1574161, certain hydroxy carboxylic acids for example gallic acid and saccharic acid; the reaction products of one or more sulphonated aromatic compounds with an aldehyde and/or dimethylol urea or a mixture of formaldehyde and urea (including all those which are described or disclosed in British Patent Application 2104921
- Other compounds which may be useful as smut-inhibiting additives include water-soluble phosphonic acids or one or more water-soluble salts of such acid each of which acid or salt forms one or more complexes with a divalent metal.
- water-soluble phosphonic acids or one or more water-soluble salts of such acid each of which acid or salt forms one or more complexes with a divalent metal.
- a relatively large number of phosphonic acids are known which form complexes with divalent metals.
- R represents a phenyl residue or alkyl residue with 1 to 5 carbon atoms
- R, and R 2 each represent a hydrogen atom or alkyl residue with 1 to 4 carbon atoms
- R 3 represent a hydrogen atom or alkyl residue with 1 to 4 carbon atoms or a phenyl residue or those of the formula in which X and Y each represents a hydrogen atom or an alkyl residue with 1 to 4 carbon atoms
- R 4 represents a P0 3 H 2 group or an alkyl group having from 1 to 18 carbon atoms or a group of the formula where n is zero or an integer having a value of from 1 to 5 and X and Y are as hereinbefore defined. or wherein X and Y are as hereinbefore defined wherein R 5 represents a hydrogen atom, a methyl group or a -CH2-CHz-COOH group.
- hydroxyalkanediphosphonic acids of Formula 1 which may be used are 1-hydroxypropane-, 1-hydroxybutane-, 1-hydroxypentane- and 1-hydroxyhexane-1,1-diphosphonic acid as well as 1-hydroxy-1-phenylmethane-1,1-diphosphonic acid and preferably 1-hydroxyethane-1,1-diphosphonic acid.
- phosphonic acids of the general formula 11 are 1-aminoethane-, 1-amino-1-phenylmethane-, dimethylaminoethane-, propyl- and butyl-aminoethane-1,1-diphosphonic acid.
- Examples of phosphonic acids of formula 111 are aminotrimethylene phosphonic acid, hexamethylenediaminetetra(methylene phosphonic) acid, ethylenediaminotetramethylenephosphonic acid, diethylenetriaminopentamethylene- phosphonic acid, n-propylimino bis (methylene phosphonic) acid and aminotri(2-propylene-2-phosphonic acid).
- Examples of phosphonic acids of the general formula IV are phosphonosuccinic acid, 1-phosphono-1-methylsuccinic acid and 2-phosphonobutane-1,2,4 tricarboxylic acid.
- Especially valuable smut-inhibiting additives for use in the present invention are the phosphonic acids, especially ethylenediaminotetramethylenephosphonic acid, hexamethylenediaminetetra(methylene phosphonic) acid, n-propyliminobis(methylene phosphonic) acid and benzene hexacarboxylic acid and salts thereof and the reaction products of sulphonated aromatic compounds with an aldehyde and/or dimethylolurea or a mixture of formaldehyde and urea especially those products formed by the reaction of the sulphonation products of diphenyl, phenyltoluene, dimethyldiphenyl, diphenylether, diphenylsulphide, diphenylsulphoxide, dihydroxydiphenylsulphone, diphenylene oxide, diphenylene sulphide and bis phenol with an aldehyde and/or dimethylolurea or a mixture or formaldehyde and ure
- the preferred sulphonated aromatic compounds are sulphonated diphenyl, dimethyldiphenyl, diphenyl ether and additionally, when reacted with dimethylolurea (or a mixutre of formaldehyde and urea), unsubstituted phenol and cresol.
- Preferred aldehydes used in the preparation of the reaction product are acetaldehyde and formaldehyde, more preferably formaldehyde.
- the reaction product is formed with a mixture of formaldehyde and urea
- the molar ratio of formaldehyde to urea is at least 2:1.
- Preferred reaction products are those formed by the reaction of formaldehyde with a compound containing no halogen or hydroxyl groups, or the reaction of sulphonated phenols with dimethylolurea. More preferred is the reaction product of formaldehyde with a compound of formula V in which R represents a hydrogen atom an alkyl group having 1 to 4 carbon atoms, a hydroxyl group or a halogen atom X represents a direct bond or a group of the formula and n has an average value in the range 1 to 4.
- the mixture to form the reaction product is sulphonated phenol, cresol or naphthol with dimethylolurea (or a mixture of formaldehyde and urea) further compounds such as phenols and naphthols may be included into the product by polymerisation with formaldehyde.
- the sulphonated aromatic compounds are known and may be made according to known methods.
- reaction of a compound of formula V with formaldehyde or. dimethylolurea is known and may be carried out in accordance with known methods.
- the phosphonic acid smut-inhibiting additives must be used in combination with a divalent metal ion M2+ in a molar ratio of at least 2M 2+ :1 phosphonate group in order to be effective, i.e. the molar proportion of divalent metal ions must be at least sufficient as is theoretically required to form a complex with all of the phosphonate groups present. If the necessary quantity of divalent metal ions is not present in the sealing bath, e.g. in the form of calcium and magnesium salts dissolved in tap water, it is necessary to add a sufficient quantity of a soluble salt of a divalent metal to raise the molar ratio of metal ions to phosphonate groups to at least 2: 1. Preferably the molar ratio of divalent metal ions to phosphonate group is at least 4: 1.
- divalent metal ions appear to deactivate the phosphonate. Where this effect is observed a sufficient quantity of phosphonate can be added which will form a complex with the deactivating metal ion. Thereafter the addition of a further quantity of phosphonate together with the appropriate quantity of a salt of an acceptable divalent metal will be effective in inhibiting smut formation.
- salts of calcium magnesium, nickel or cobalt are examples of ions which may be deactivate the phosphonate and whose presence is thereby less preferred.
- ferric ions and cupric ions are ferric ions and cupric ions.
- ions which complex strongly with the phosphonate appear to deactivate it as a smut-inhibiting agent and their presence is correspondingly less preferred.
- the use of ethylenediamino tetramethylene phosphonic acid or its water soluble salts as a smut-inhibiting agent especially its magnesium salt is particularly preferred.
- the quantity of anti-smutting agent which is present in the bath varies with the nature of that agent.
- the quantity which is sufficient to suppress smut formation in a particular sealing process and the minimum effective quantity will normally be determined empirically.
- the formation of a sealed anodised surface of a satisfactory quality is accompanied by the formation of smut it is necessary to adjust one or more of the parameters which effect the efficiency of the bath, e.g. by increasing quantity of smut-inhibiting additive in the bath or to select a more effective smut-inhibiting additive.
- the quantity of some of the preferred anti-smutting agents e.g. benzene hexacarboxylic acid, 1-hydroxyethane-1-1 diphosphonic acid, and ethylenediaminotetramethylenephosphonic acid will be in the range 1 to 500 ppm of the bath, e.g. 2 to 300 and more preferably 5 to 200 ppm of the bath.
- the reaction product of sulphonated aromatic compounds with an aldehyde and/or dimethylolurea (or a mixture of formaldehyde and urea) will preferably be present in a quantity of from 0.01 to 5.0 gms/litre of the bath.
- the effective quantity will vary according to the anti-smutting agent which is selected and will normally be determined empirically under the conditions which are to be employed in the sealing process.
- the quantity will be from 5 to 500 ppm in the case of benzene hexacarboxylic acid, from 5 to 100 ppm in the case of ethylenediaminotetramethylenephosphonic acid.
- the use of excessive quantities of anti-smutting additives may have a detrimental effect upon the quality of the anodised coating and is thereby preferably avoided. Where the pH of the bath is relatively high the maximum amount of a particular anti-smutting agent which may be tolerated without damage to the anodised coating will be increased.
- the preferred bases for present use are Lewis bases. Examples of suitable bases are triethanolamine, sodium borate, sodium carbonate, sodium bicarbonate, mono-ethanolamine, diethanolamine and hexamine or mixtures thereof. The most preferred base for present use is triethanolamine. Commercial grades of triethanolamine which contain minor quantities of diethanolamine and monoethanolamine may be used if desired. The addition of a base which might inhibit the sealing process should preferably be avoided. Thus, bases which liberate phosphate silicate and fluoride ions on dissolution in water are preferably not employed.
- the sealing process of the present invention may be carried out in demineralised water or in tap water.
- demineralised water is advantageous in that the sealing process is more likely to proceed without complication.
- the bath will inevitably become contaminated by the carry-over of material from previous processing steps, e.g. the anodising bath and subsequent rinsing steps. Although a certain amount of this contamination may be tolerated the efficiency of the sealing process is decreased and eventually the bath must be discarded.
- the use of tap water to make up the bath may be disadvantageous in that the minerals which are dissolved in it may affect the efficiency of the sealing process.
- the presence of dissolved minerals may also lead to the precipitation of solid material in the sealing bath which can form an unsightly crusted coating upon the anodised surface.
- This tendency is most common when the anti-smutting agent comprises a phosphonic acid or a phosphonate as hereinbefore described.
- the deposited solids can usually be removed by rinsing with water, it is preferred to operate the sealing bath under such conditions as will avoid the need for such a rinsing step. We have discovered that this tendency to the formation of solid material can be reduced by the addition of a surface active agent to the bath.
- the quantity of such a compound may vary through a wide range say 1 ppm to 10 gms/litre.
- the preferred additive is carboxymethylcellulose, hereinafter referred to as CMC.
- CMC carboxymethylcellulose
- the addition of from 5 ppm to 100 ppm of CMC will often be sufficient to prevent the formation of solid material in the bath.
- the sealing bath may also contain conventional additives e.g. additives which are known to inhibit the leaching of dye such as nickel acetate.
- the bath may also advantageously contain a wetting agent, the presence of which enhances the efficiency of the sealing process. Relatively small quantities of wetting agent, say wetting agent, say from 2.0 to 2000 ppm of the bath may be employed.
- wetting agent say wetting agent
- the efficient operation of the bath may be prolonged by the addition of an agent which is capable of complexing with the metal.
- An example of a suitable agent is citric acid.
- Such agents may be effective when present in quantities which are significantly less than would be required to complex the metal ions which are present in the bath.
- the baths may also advantageously contain a buffering agent to assist the control of the pH.
- Suitable buffering agents include salts of acetic acid and formic acid.
- the various ingredients of the sealing bath may be added separately if so desired. It is preferred by way of convenience to formulate the various additives as a separate concentrate and then add that concentrate to the bath. Concentrates, when added to water, form a sealing bath useful in the process of the present invention.
- Such concentrates comprise at least one anti-smutting agent, as hereinbefore defined, and at least one base, as hereinbefore defined.
- Optional ingredients include salts of organic acids such as acetic acid to regulate the pH thereof, other additives such as nickel acetate and any other compatible ingredients of the bath.
- Additives such as nickel acetate are preferably solubilised in the concentrate e.g. by the addition of triethanolamine to form a water soluble complex.
- the pH of the sealing bath is established by the addition of such a concentrate to water and maintained within the desired limits by the addition of further quantities of reagents as the sealing operation progresses.
- sealing baths were assessed using the methods hereinbefore described and in addition by visually inspecting the sealed product the visible presence of any velvety bloom being regarded as unsatisfactory.
- the pieces used were formed of Type 6063 aluminium alloy which had been alkaline etched (5% NaOH + additives) and anodised in sulphuric acid (175 gms/litre at 18-20 0 C and 1.5A/dm 2 ) to provide an anodic film of 20 microns thickness.
- Demineralised water with mellitic acid (benzene hexacarboxylic acid) added in the quantities shown.
- the pH of the bath was raised by the addition of triethanolamine.
- the first two results illustrate comparative procedures.
- the seal obtained in the time used is not of adequate quality.
- the third result is an Example according to the invention showing satisfactory sealing is obtained in a significantly shorter time.
- the sealing time was 1 min/micrometer.
- ANADOL SH1 is an aqueous solution comprising a reaction product of a sulphonated aromatic compound with an aldehyde or dimethylolurea (or a mixture of formaldehyde and urea).
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Abstract
Description
- This invention relates to a novel process for the treatment of anodised aluminium surfaces by immersing them in aqueous liquors.
- The resistance of the surface of aluminium and aluminium alloys to corrosion and abrasion is conventionally improved by subjecting them to anodic oxidation so as to form a substantially anhydrous layer of adherent aluminium oxide. Surfaces which have been subjected to this treatment are referred to as having been "anodised". The anodising treatment can be carried out in a variety of ways, for example, by the application of direct current in dilute aqueous solutions of sulphuric acid, or organic acids such as oxalic acid or mixtures thereof with sulphuric acid. These coatings can be coloured by immersion in a solution of a suitable dye or by treatment with alternating current in an electrolyte containing metal salts. Alternatively, the anodising can be carried out in solutions of organic acids such as sulphophthalic acid or sulphosalicyclic acid or mixtures thereof with sulphuric acid.
- The oxidised layer formed by these anodising treatments has a porous structure and is insufficiently durable to fully protect the metal surface. For this reason the anodised metal is usually subjected to a further treatment known as sealing. Sealing is usually carried out by immersing the metal in hot or boiling water, which process is believed to cause the hydration of the substantially anhydrous aluminium oxide in the anodised layer thus causing a swelling of that layer which serves to seal the pores in its structure. Whatever the mechanism, the durability of the anodised surfaces is considerably increased by sealing.
- One attendant disadvantage of sealing processes is that the treatment affects not only the pores in the oxide layer but also the surface of that layer. Sealed surfaces tend to have a layer of loosely adherent material formed at their surface, which layer is visually unattractive and also detracts from the useful properties of the metal. This surface layer which is commonly termed "smut" is usually removed prior to sale by mechanical or chemical treatment. The use of an alkaline sealing bath is known to significantly accelerate the sealing process, but the problem of smut formation worsens as the alkalinity increases and sealing is normally carried out in baths which are slightly acidic, e.g. the pH of a sealing bath is normally maintained within the range 5.5 to 6.5 and sealing times of from 2 to 4 minutes per micrometer of thickness of the anodised layer are required to obtain adequate sealing (see for example The Technology of Anodising Aluminium by A. W. Brace and P. G. Sheasby publishers Technicopy Ltd., 2nd edition, 1979, p 224-5. Recently in an attempt to overcome the problem of smut formation a variety of additives to the sealing bath which are claimed to inhibit the formation of smut have been described, which additives will hereinafter be referred to as "anti-smutting additives". Examples of anti-smutting additives are the compounds disclosed in British Patents 1265465, 1302288, 1368336, 1398589, 1419957, 1574161 and British Patent Application 2104921. British Patent 1574161 mentions that the sealing bath, in which the additives described therein are used, may have a pH of 4-8.
- We have now discovered that the sealing of anodised coatings can be carried out rapidly and efficiently and without any significant smut formation by immersing the anodised surface in an aqueous medium containing an effective quantity of at least one selected smut inhibiting additive and having a pH of at least 7.0. Accordingly, from one aspect our invention provides a process for the hydrothermal sealing of anodised aluminium which comprises immersing the anodised surface in an aqueous medium at a temperature of at least 80°C wherein satisfactory sealing is effected without the formation of any substantial quantity of smut whilst immersing the surface in the aqueous medium for a period of not more than 2 minutes per micrometer of the thickness of the anodised layer and maintaining the pH of the aqueous medium at a value of at least 7.0 and ensuring that the medium contains an effective quantity of a smut inhibiting additive.
- The additives which are useful in the process of this invention are "anti-smutting additives" in that they are selected so as to avoid the formation of smut during the novel alkaline sealing process. They are distinguished from the known "anti-smutting additives" in that not all of the known additives are effective in the novel alkaline sealing process and in that the smut-inhibiting additives need not be effective as anti-smutting additives in the acidic sealing processes of the prior art. For reasons of clarity the term "smut-inhibiting additives" will be used hereafter in relation to those additives which are effective in the novel sealing process of this invention.
- The sealing process of the present invention is advantageous in that it is carried out under such conditions that a sealed coating of acceptable quality which is free from smut is obtained in a shorter time than is attainable using comparable known sealing processes. Since the sealing bath must be maintained at an elevated temperature the energy required of the process is considerably reduced without the need to chemically or mechanically remove the smut. The present invention provides a sealing process wherein satisfactory sealing is achieved in not more than 2 minutes per micrometer of thickness of the anodised layer advantageously less than 1.5 minutes, preferably less than 1.25 and more preferably less than 1.00 minutes per micrometer at bath temperatures of 95°C or above. The rate of sealing may be less than this if the process is carried out at temperatures of less than 95°C. Generally the temperature of the sealing bath will be at least 80°C since the rate of sealing at lower temperatures than this is unacceptably slow. The seating temperature is preferably between 95°C and the boiling point of the bath. Pressurised systems in which the temperature may be above 100°C, e.g. 110°C or even 115°C may be employed.
- The process of the present invention is carried out under such conditions that no smut is formed during the sealing step. A smut-free product is one upon which no smut is visually detectable. Products which are deemed "smut-free" may carry small particles of smut which are detectable by careful scrutiny, but which do not detract from the appearance of.the sealed article as a whole.
- The process of the present invention is carried out under such conditions so as to seal the product to the desired degree.
- Anodised aluminium which is to be used in architecture and exposed to weathering will normally be sealed as efficiently as is practicable in order to maximise its corrosion resistance. The quality of sealing may be evaluated using one or more of three classes of standard tests; the weight loss in acid test, the dyespot test and the conductivity test. These tests can be carried out using the following techniques.
- Methods for measuring these criteria are laid down in the relevant British Standards. The methods used in this disclosure are
- (i) Weight loss in phosphoric/chromic acid - BS6161: Part 3:1981 (IS03210-1974). The maximum permissible loss in mass for the coating under test is commonly accepted at 30 mg/dm2.
- (ii) Dye adsorption - BS6161: Part 5:1982 (ISO 2413-1981) - using Acid A and Dye B an intensity of stain of 2 or less (rated according to BS6161: Parts 5:1982) is satisfactory.
- (iii) Electrical conductivity BS1615: 1972 Appendix G - to take account of the variations in the thickness of the anodic film the result is expressed as the product of the conductivity in microsiemens and the thickness of the coating in micrometers which to satisfy BS 1615 should be less than 500.
-
- For the purpose of this disclosure the criterion used to evaluate the quality of the seal is an at least adequate performance in the weight loss in acid test.
- The pH of the sealing bath is at least 7.0 and more preferably at least 7.5 or 8.0. Higher pH's promote the rapid sealing of the anodised coating but may have detrimental effects upon the quality of that coating and also may encourage the formation of smut. The maximum pH of the bath will vary with its composition and the temperature of operation, but will generally be below 10.0, preferably below 9.5 and most preferably below 9.0. Thus, preferably, the pH of the sealing bath will be maintained at a value in the range 7.0 to 9.0, e.g. 7.5 to 8.5.
- The compounds which are effective smut-inhibiting agents in the sealing process of the present invention must be water soluble and must not adversely effect the quality of the seal. Compounds which inhibit crystal growth in alkaline aqueous media when present in threshold quantities, e.g. from 1 to 1000 ppm are potentially valuable as smut-inhibiting additives although not all known threshold treatment agents are useful as smut-inhibiting additives in the process of the present invention either because they do not inhibit smut formation or because they retard the sealing process.
- Not all compounds are equally effective as smut-inhibitors. Under conditions which are known to favour the formation of smut, e.g. high alkalinity and high temperatures, some compounds will not adequately suppress the formation of smut even when present in large quantities. However, such compounds may function adequately under less onerous conditions or may be useful in combination with other smut-inhibiting additives which are more effective under particular conditions. Smut inhibiting additives which may be useful in the process of the present invention can be selected from the group comprising dextrins (including commercial dextrins, especially those having a viscosity of 50 to 400 cP in 50% by weight solution at 20°C as measured with a Brookfield rotary viscometer, e.g. as described in British Patent 1302288); acrylic acid, methacrylic acid and water soluble polymers derived therefrom, especially those polymers having a specific viscosity of up to 0.75 cP measured at 20°C in 2N caustic soda and at a concentration of 0.7%, e.g. those described in British Patent 1368336, and lignin sulphonates (including all those described in British Patent 1368336); acids such as cycloaliphatic or aromatic polycarboxylic acid having from 4 to 6 carboxylic acid groups per molecule such as benzene penta carboxylic acid, benzene tetracarboxylic acid, benzene hexacarboxylic acid, cyclohexane tetracarboxylic acid and cyclohexane hexacarboxylic acid (in any of their various isomeric forms) or a water soluble salt thereof, e.g. the alkali metal, alkaline earth metal ammonium and alkanolamine salts especially those described in British Patent 1574161, certain hydroxy carboxylic acids for example gallic acid and saccharic acid; the reaction products of one or more sulphonated aromatic compounds with an aldehyde and/or dimethylol urea or a mixture of formaldehyde and urea (including all those which are described or disclosed in British Patent Application 2104921
- Other compounds which may be useful as smut-inhibiting additives include water-soluble phosphonic acids or one or more water-soluble salts of such acid each of which acid or salt forms one or more complexes with a divalent metal. A relatively large number of phosphonic acids are known which form complexes with divalent metals. It is preferred to use compounds which correspond to the following general formula:
- Examples of hydroxyalkanediphosphonic acids of Formula 1 which may be used are 1-hydroxypropane-, 1-hydroxybutane-, 1-hydroxypentane- and 1-hydroxyhexane-1,1-diphosphonic acid as well as 1-hydroxy-1-phenylmethane-1,1-diphosphonic acid and preferably 1-hydroxyethane-1,1-diphosphonic acid. Examples of phosphonic acids of the general formula 11 are 1-aminoethane-, 1-amino-1-phenylmethane-, dimethylaminoethane-, propyl- and butyl-aminoethane-1,1-diphosphonic acid. Examples of phosphonic acids of formula 111 are aminotrimethylene phosphonic acid, hexamethylenediaminetetra(methylene phosphonic) acid, ethylenediaminotetramethylenephosphonic acid, diethylenetriaminopentamethylene- phosphonic acid, n-propylimino bis (methylene phosphonic) acid and aminotri(2-propylene-2-phosphonic acid). Examples of phosphonic acids of the general formula IV are phosphonosuccinic acid, 1-phosphono-1-methylsuccinic acid and 2-phosphonobutane-1,2,4 tricarboxylic acid.
- Especially valuable smut-inhibiting additives for use in the present invention are the phosphonic acids, especially ethylenediaminotetramethylenephosphonic acid, hexamethylenediaminetetra(methylene phosphonic) acid, n-propyliminobis(methylene phosphonic) acid and benzene hexacarboxylic acid and salts thereof and the reaction products of sulphonated aromatic compounds with an aldehyde and/or dimethylolurea or a mixture of formaldehyde and urea especially those products formed by the reaction of the sulphonation products of diphenyl, phenyltoluene, dimethyldiphenyl, diphenylether, diphenylsulphide, diphenylsulphoxide, dihydroxydiphenylsulphone, diphenylene oxide, diphenylene sulphide and bis phenol with an aldehyde and/or dimethylolurea or a mixture or formaldehyde and urea or where the sulphonated aromatic compound is a sulphonated derivative of phenol, cresol or naphthol the reaction products thereof with dimethylolurea or a mixture of formaldehyde and urea.
- The preferred sulphonated aromatic compounds are sulphonated diphenyl, dimethyldiphenyl, diphenyl ether and additionally, when reacted with dimethylolurea (or a mixutre of formaldehyde and urea), unsubstituted phenol and cresol.
- Preferred aldehydes used in the preparation of the reaction product are acetaldehyde and formaldehyde, more preferably formaldehyde.
- Preferably where the reaction product is formed with a mixture of formaldehyde and urea, the molar ratio of formaldehyde to urea is at least 2:1.
- Preferred reaction products are those formed by the reaction of formaldehyde with a compound containing no halogen or hydroxyl groups, or the reaction of sulphonated phenols with dimethylolurea. More preferred is the reaction product of formaldehyde with a compound of formula V
- When the mixture to form the reaction product is sulphonated phenol, cresol or naphthol with dimethylolurea (or a mixture of formaldehyde and urea) further compounds such as phenols and naphthols may be included into the product by polymerisation with formaldehyde.
- The sulphonated aromatic compounds are known and may be made according to known methods. For the sulphonation reaction of compounds of formula V one uses preferably 1-2 moles (more preferably 1.5 moles) of sulphuric acid per mole of the aromatic compound to be sulphonated at a temperature of from 80 to 180°C in the presence of a sulphonating medium.
- The reaction of a compound of formula V with formaldehyde or. dimethylolurea is known and may be carried out in accordance with known methods.
- The phosphonic acid smut-inhibiting additives must be used in combination with a divalent metal ion M2+ in a molar ratio of at least 2M2+:1 phosphonate group in order to be effective, i.e. the molar proportion of divalent metal ions must be at least sufficient as is theoretically required to form a complex with all of the phosphonate groups present. If the necessary quantity of divalent metal ions is not present in the sealing bath, e.g. in the form of calcium and magnesium salts dissolved in tap water, it is necessary to add a sufficient quantity of a soluble salt of a divalent metal to raise the molar ratio of metal ions to phosphonate groups to at least 2: 1. Preferably the molar ratio of divalent metal ions to phosphonate group is at least 4: 1.
- In some instances certain divalent metal ions appear to deactivate the phosphonate. Where this effect is observed a sufficient quantity of phosphonate can be added which will form a complex with the deactivating metal ion. Thereafter the addition of a further quantity of phosphonate together with the appropriate quantity of a salt of an acceptable divalent metal will be effective in inhibiting smut formation. In general we prefer to use salts of calcium magnesium, nickel or cobalt as the divalent metal salt. Examples of ions which may be deactivate the phosphonate and whose presence is thereby less preferred are ferric ions and cupric ions. In general ions which complex strongly with the phosphonate appear to deactivate it as a smut-inhibiting agent and their presence is correspondingly less preferred. The use of ethylenediamino tetramethylene phosphonic acid or its water soluble salts as a smut-inhibiting agent especially its magnesium salt is particularly preferred.
- The quantity of anti-smutting agent which is present in the bath varies with the nature of that agent. The quantity which is sufficient to suppress smut formation in a particular sealing process and the minimum effective quantity will normally be determined empirically. When the formation of a sealed anodised surface of a satisfactory quality is accompanied by the formation of smut it is necessary to adjust one or more of the parameters which effect the efficiency of the bath, e.g. by increasing quantity of smut-inhibiting additive in the bath or to select a more effective smut-inhibiting additive.
- By way of example, the quantity of some of the preferred anti-smutting agents e.g. benzene hexacarboxylic acid, 1-hydroxyethane-1-1 diphosphonic acid, and ethylenediaminotetramethylenephosphonic acid will be in the range 1 to 500 ppm of the bath, e.g. 2 to 300 and more preferably 5 to 200 ppm of the bath. The reaction product of sulphonated aromatic compounds with an aldehyde and/or dimethylolurea (or a mixture of formaldehyde and urea) will preferably be present in a quantity of from 0.01 to 5.0 gms/litre of the bath. The effective quantity will vary according to the anti-smutting agent which is selected and will normally be determined empirically under the conditions which are to be employed in the sealing process. For the preferred anti-smutting agents the quantity will be from 5 to 500 ppm in the case of benzene hexacarboxylic acid, from 5 to 100 ppm in the case of ethylenediaminotetramethylenephosphonic acid. The use of excessive quantities of anti-smutting additives may have a detrimental effect upon the quality of the anodised coating and is thereby preferably avoided. Where the pH of the bath is relatively high the maximum amount of a particular anti-smutting agent which may be tolerated without damage to the anodised coating will be increased.
- In order to maintain the pH of the sealing bath above 7.0 and preferably within the preferred ranges set out above, it will usually be necessary to add a quantity of a water-soluble base to the sealing bath. The preferred bases for present use are Lewis bases. Examples of suitable bases are triethanolamine, sodium borate, sodium carbonate, sodium bicarbonate, mono-ethanolamine, diethanolamine and hexamine or mixtures thereof. The most preferred base for present use is triethanolamine. Commercial grades of triethanolamine which contain minor quantities of diethanolamine and monoethanolamine may be used if desired. The addition of a base which might inhibit the sealing process should preferably be avoided. Thus, bases which liberate phosphate silicate and fluoride ions on dissolution in water are preferably not employed.
- The sealing process of the present invention may be carried out in demineralised water or in tap water. The use of demineralised water is advantageous in that the sealing process is more likely to proceed without complication. However, in a commercial operating process the bath will inevitably become contaminated by the carry-over of material from previous processing steps, e.g. the anodising bath and subsequent rinsing steps. Although a certain amount of this contamination may be tolerated the efficiency of the sealing process is decreased and eventually the bath must be discarded.
- The use of tap water to make up the bath may be disadvantageous in that the minerals which are dissolved in it may affect the efficiency of the sealing process. The presence of dissolved minerals may also lead to the precipitation of solid material in the sealing bath which can form an unsightly crusted coating upon the anodised surface. This tendency is most common when the anti-smutting agent comprises a phosphonic acid or a phosphonate as hereinbefore described. Although the deposited solids can usually be removed by rinsing with water, it is preferred to operate the sealing bath under such conditions as will avoid the need for such a rinsing step. We have discovered that this tendency to the formation of solid material can be reduced by the addition of a surface active agent to the bath. The quantity of such a compound may vary through a wide range say 1 ppm to 10 gms/litre. The preferred additive is carboxymethylcellulose, hereinafter referred to as CMC. The addition of from 5 ppm to 100 ppm of CMC will often be sufficient to prevent the formation of solid material in the bath.
- The sealing bath may also contain conventional additives e.g. additives which are known to inhibit the leaching of dye such as nickel acetate. The bath may also advantageously contain a wetting agent, the presence of which enhances the efficiency of the sealing process. Relatively small quantities of wetting agent, say wetting agent, say from 2.0 to 2000 ppm of the bath may be employed. Where heavy metal ions are present in the bath whether by addition, e.g. of tap water or by contamination from other parts of the anodising plant, which ions interfere with the efficiency of the sealing process, the efficient operation of the bath may be prolonged by the addition of an agent which is capable of complexing with the metal. An example of a suitable agent is citric acid. Such agents may be effective when present in quantities which are significantly less than would be required to complex the metal ions which are present in the bath. The baths may also advantageously contain a buffering agent to assist the control of the pH. Suitable buffering agents include salts of acetic acid and formic acid.
- The various ingredients of the sealing bath may be added separately if so desired. It is preferred by way of convenience to formulate the various additives as a separate concentrate and then add that concentrate to the bath. Concentrates, when added to water, form a sealing bath useful in the process of the present invention.
- Such concentrates comprise at least one anti-smutting agent, as hereinbefore defined, and at least one base, as hereinbefore defined. Optional ingredients include salts of organic acids such as acetic acid to regulate the pH thereof, other additives such as nickel acetate and any other compatible ingredients of the bath. Additives such as nickel acetate are preferably solubilised in the concentrate e.g. by the addition of triethanolamine to form a water soluble complex.
- In a preferred embodiment of the process of the present invention the pH of the sealing bath is established by the addition of such a concentrate to water and maintained within the desired limits by the addition of further quantities of reagents as the sealing operation progresses.
- The invention is illustrated by the following examples:-
- In the Examples the sealing baths were assessed using the methods hereinbefore described and in addition by visually inspecting the sealed product the visible presence of any velvety bloom being regarded as unsatisfactory.
- In these examples the pieces used were formed of Type 6063 aluminium alloy which had been alkaline etched (5% NaOH + additives) and anodised in sulphuric acid (175 gms/litre at 18-200C and 1.5A/dm2) to provide an anodic film of 20 microns thickness.
- Each test was carried out on uncoloured specimens for measurement of sealing quality and on replicate specimens which were black dyed prior to sealing (using standard anodising dye) to aid detection of surface films of bloom.
-
-
- Smut formed after less than 0.5 min/micrometer.
-
- x comparison.
- No smut observed.
-
- Smut present throughout
-
- x comparison
- No smut observed
-
- The first two results illustrate comparative procedures. The seal obtained in the time used is not of adequate quality. The third result is an Example according to the invention showing satisfactory sealing is obtained in a significantly shorter time.
-
- These results show that the phosphonate is ineffective as a smut-inhibitor in the absence of divalent metal ions.
-
- These results show that the phosphonate is effective as a smut-inhibitor in the presence of divalent metal ions.
- The results at a concentration of 60 mg/litre illustrate the reduction of the quality of the seal produced by excessive quantities of smut-inhibitor and how this effect can be overcome by raising the pH of the bath.
- A set quantity of one of three phosphonates A, B and C was added to a sealing bath comprising demineralised water together with sufficient magnesium ion to give a molar ratio of phosphonate:Mg = 1:4. The sealing time was 1 min/micrometer.
- A = Hexamethylenediaminetetrakis (methylene phosphonic) acid.
- B = Diethylenetriaminepentakis (methylene phosphonic) acid.
- C = n-propyliminobis(methylenephonic) acid.
- A commercial product sold under the Trade Name ANODAL SH1 * by the Sandoz Company was added to demineralised water in varying quantities to form sealing baths. The baths were tested at various pH's and various sealing times, as shown in the following tabular summary of results.
-
Claims (22)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT84302358T ATE45396T1 (en) | 1983-04-08 | 1984-04-06 | PROCESS FOR DENSING ANODIZED ALUMINUM. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB838309571A GB8309571D0 (en) | 1983-04-08 | 1983-04-08 | Accelerated sealing of anodised aluminium |
GB8309571 | 1983-04-08 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0122129A2 EP0122129A2 (en) | 1984-10-17 |
EP0122129A3 EP0122129A3 (en) | 1985-09-18 |
EP0122129B1 true EP0122129B1 (en) | 1989-08-09 |
Family
ID=10540815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP84302358A Expired EP0122129B1 (en) | 1983-04-08 | 1984-04-06 | Process for sealing anodised aluminium |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP0122129B1 (en) |
JP (1) | JPS59197594A (en) |
AT (1) | ATE45396T1 (en) |
AU (1) | AU579098B2 (en) |
BR (1) | BR8401643A (en) |
CA (1) | CA1251416A (en) |
DE (1) | DE3479324D1 (en) |
ES (1) | ES8608589A1 (en) |
GB (2) | GB8309571D0 (en) |
ZA (1) | ZA842624B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19831780B4 (en) * | 1997-07-15 | 2012-11-08 | Fuji Electric Co., Ltd | Substrate for an electrophotographic photoconductor and electrophotographic photoconductor in which it is used |
EP4299792A3 (en) * | 2019-03-01 | 2024-03-20 | Howmet Aerospace Inc. | Metallic substrate treatment methods and articles comprising a phosphonate functionalized layer |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3820650A1 (en) * | 1988-06-18 | 1989-12-21 | Henkel Kgaa | METHOD FOR COMPRESSING ANODIZED OXIDE LAYERS ON ALUMINUM AND ALUMINUM ALLOYS |
DE3900169A1 (en) * | 1989-01-05 | 1990-07-12 | Henkel Kgaa | METHOD OF IMPREGNIZING ANODICALLY PRODUCED SURFACES OF ALUMINUM |
DE4210884C2 (en) * | 1991-04-09 | 2000-10-05 | Clariant Finance Bvi Ltd | Cobalt- and nickel-free compaction preparations |
WO1997014828A1 (en) * | 1995-10-18 | 1997-04-24 | Henkel Kommanditgesellschaft Auf Aktien | Short duration hot seal for anodised metal surfaces |
DE19621818A1 (en) * | 1996-05-31 | 1997-12-04 | Henkel Kgaa | Short-term hot compression of anodized metal surfaces with solutions containing surfactants |
WO2001036717A1 (en) * | 1999-11-18 | 2001-05-25 | Houghton Metal Finishing | A sealant composition |
WO2003016596A1 (en) * | 2001-08-14 | 2003-02-27 | Magnesium Technology Limited | Magnesium anodisation system and methods |
CN101736386B (en) * | 2008-11-27 | 2011-11-16 | 比亚迪股份有限公司 | Aluminium alloy sealing agent |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB991114A (en) * | 1960-09-30 | 1965-05-05 | Reynolds Metals Co | Improvements in sealing of anodic oxide films on aluminium |
BE755573A (en) * | 1969-09-02 | 1971-03-01 | Henkel & Cie Gmbh | PROCESS FOR TREATING ALUMINUM SURFACES AND ALUMINIU ALLOYS |
DE2062661A1 (en) * | 1970-12-19 | 1972-06-22 | Henkel & Cie Gmbh | Process to prevent deposits in the redensification of anodically oxidized aluminum surfaces |
DE2211553C3 (en) * | 1972-03-10 | 1978-04-20 | Henkel Kgaa, 4000 Duesseldorf | Process for compacting anodic oxide layers on aluminum and aluminum alloys |
US3961111A (en) * | 1975-03-18 | 1976-06-01 | Pennwalt Corporation | Method of increasing corrosion resistance of anodized aluminum |
JPS5235017A (en) * | 1975-09-11 | 1977-03-17 | Nippon Signal Co Ltd:The | Train control system |
DE2650989C2 (en) * | 1976-11-08 | 1985-01-24 | Henkel KGaA, 4000 Düsseldorf | Process for the treatment of aluminum surfaces by oxidation with subsequent compaction |
CH645929A5 (en) * | 1978-09-07 | 1984-10-31 | Alusuisse | RE-COMPRESSION BATH FOR ANODICALLY OXIDIZED SURFACES MADE OF ALUMINUM OR ALUMINUM ALLOYS AND USE OF THE BATH. |
DE2855508A1 (en) * | 1978-12-22 | 1980-07-10 | Basf Ag | METHOD FOR PRODUCING BENZALDEHYDES |
CH655519B (en) * | 1981-08-28 | 1986-04-30 | ||
DE3219922A1 (en) * | 1982-05-27 | 1983-12-01 | Hoechst Ag, 6230 Frankfurt | METHOD FOR TREATING ALUMINUM OXIDE LAYERS WITH AQUEOUS SOLUTIONS CONTAINING ALKALISILICATE AND THE USE THEREOF IN THE PRODUCTION OF OFFSET PRINT PLATE CARRIERS |
CH654853A5 (en) * | 1982-08-07 | 1986-03-14 | Sandoz Ag | METHOD FOR COMPRESSING ANODICALLY OXYDED ALUMINUM SURFACES. |
-
1983
- 1983-04-08 GB GB838309571A patent/GB8309571D0/en active Pending
-
1984
- 1984-04-06 GB GB08408870A patent/GB2139646B/en not_active Expired
- 1984-04-06 ES ES531380A patent/ES8608589A1/en not_active Expired
- 1984-04-06 DE DE8484302358T patent/DE3479324D1/en not_active Expired
- 1984-04-06 CA CA000451431A patent/CA1251416A/en not_active Expired
- 1984-04-06 AT AT84302358T patent/ATE45396T1/en not_active IP Right Cessation
- 1984-04-06 EP EP84302358A patent/EP0122129B1/en not_active Expired
- 1984-04-09 JP JP59069284A patent/JPS59197594A/en active Pending
- 1984-04-09 AU AU26718/84A patent/AU579098B2/en not_active Ceased
- 1984-04-09 ZA ZA842624A patent/ZA842624B/en unknown
- 1984-04-09 BR BR8401643A patent/BR8401643A/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19831780B4 (en) * | 1997-07-15 | 2012-11-08 | Fuji Electric Co., Ltd | Substrate for an electrophotographic photoconductor and electrophotographic photoconductor in which it is used |
EP4299792A3 (en) * | 2019-03-01 | 2024-03-20 | Howmet Aerospace Inc. | Metallic substrate treatment methods and articles comprising a phosphonate functionalized layer |
US12018380B2 (en) | 2019-03-01 | 2024-06-25 | Howmet Aerospace Inc. | Metallic substrate treatment methods and articles comprising a phosphonate functionalized layer |
Also Published As
Publication number | Publication date |
---|---|
AU579098B2 (en) | 1988-11-17 |
AU2671884A (en) | 1984-10-11 |
DE3479324D1 (en) | 1989-09-14 |
ATE45396T1 (en) | 1989-08-15 |
GB2139646A (en) | 1984-11-14 |
ES8608589A1 (en) | 1986-06-16 |
ZA842624B (en) | 1984-11-28 |
EP0122129A3 (en) | 1985-09-18 |
EP0122129A2 (en) | 1984-10-17 |
GB8309571D0 (en) | 1983-05-11 |
GB8408870D0 (en) | 1984-05-16 |
CA1251416A (en) | 1989-03-21 |
ES531380A0 (en) | 1986-06-16 |
JPS59197594A (en) | 1984-11-09 |
BR8401643A (en) | 1984-11-20 |
GB2139646B (en) | 1987-07-29 |
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