EP0103504A1 - Current regulator apparatus with ballast transistor provided with a supplemental transistor to limit the average power dissipation of the ballast transistor - Google Patents

Current regulator apparatus with ballast transistor provided with a supplemental transistor to limit the average power dissipation of the ballast transistor Download PDF

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Publication number
EP0103504A1
EP0103504A1 EP19830401658 EP83401658A EP0103504A1 EP 0103504 A1 EP0103504 A1 EP 0103504A1 EP 19830401658 EP19830401658 EP 19830401658 EP 83401658 A EP83401658 A EP 83401658A EP 0103504 A1 EP0103504 A1 EP 0103504A1
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EP
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Prior art keywords
transistor
voltage
ballast
zener diode
assembly according
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EP19830401658
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German (de)
French (fr)
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EP0103504B1 (en
Inventor
Jean-Marc Macias
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Telemecanique SA
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Telemecanique Electrique SA
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes

Definitions

  • the subject of the invention is a current regulator assembly with a ballast transistor provided with an accessory transistor intended to limit the power dissipated in the ballast transistor.
  • a traditional current generator device comprising a regulation "ballast" transistor
  • the power dissipated in the ballast transistor therefore the heating undergone by it, are proportional to the peak value of the supply voltage and this heating can therefore become excessive when said voltage assumes relatively high values, greater than 100 volts for example.
  • a first object of the invention is a current regulator assembly with a ballast transistor free of this drawback and in which the ballast transistor is protected, by removing the current flowing through it as soon as the supply voltage exceeds a certain peak value.
  • this result is obtained by means of an assembly comprising a ballast transistor whose base is biased by a reference circuit comprising a Zener diode and supplied from the rectified AC power source, characterized by a auxiliary transistor connected in series with the ballast transistor and whose base is polarized by a voltage divider connected between the two terminals of the power source.
  • the base bias voltage of said auxiliary transistor which depends on the peak value of the supply voltage, exceeds its emitter voltage, fixed by the reference circuit, the two transistors are blocked.
  • the reference voltage is constant, the peak current is also constant, so that the average current is ultimately a decreasing function of the supply voltage.
  • Another object of the invention is an assembly capable of obtaining such a result.
  • the law of variation of the current is controlled as a function of the peak value of the supply voltage by arranging said reference circuit so that the reference voltage obeys to a predetermined variation law as a function of the peak value of the supply voltage.
  • said reference circuit comprises a resistor in series with a Zener diode and a capacitor in parallel on the series assembly thus formed.
  • FIG. 1 two transistors T 1 T 2 are shown in series between the ground and the terminals of a rectified alternating power source V.
  • the load R is mounted in the transmitter of T 1 , the base of which is polarized by the voltage across a circuit composed of a Zener diode Z in series with a resistor R 1 and a capacitor C in parallel.
  • the peak current would be constant if V c was itself constant, that is to say fixed by the Zener diode in the absence of the resistance R I specific to the invention.
  • the waveforms of the current would then be as shown in FIG. 2, in which the curve in solid lines represents the current I for a relatively high value of the peak supply voltage, while the curve in dotted lines represents the current I for a relatively low peak value of V. It can be seen that the higher the peak value of V, the shorter the current spikes, so that the average current decreases when the peak value of V is growing. It will be noted that, in such an arrangement, even without the resistor R 1 in series with the Zener diode, the current I is canceled as soon as the voltage V exceeds a certain value, so that the ballast transistor T 1 is protected against excessive heating.
  • Resistor R 1 eliminates the drawback of an average current decreasing as a function of V by increasing V c when the peak value of V increases.
  • FIG. 3 represents the curve I (t) for three decreasing values of the peak supply voltage (curves A, B and C). It can be seen that, when the peak value of V increases, the current peaks have an increasingly short duration, but an increasingly large amplitude. By measuring this effect by a suitable choice of the value of R 1 , one can obtain a practically constant mean current. The dissipation in the ballast transistor T 1 is low, because the current peaks coincide with the low instantaneous values of the supply voltage.
  • FIG 4 illustrates a preferred embodiment of the mounting.
  • the ballast instead of comprising such a transistor, is formed by two transistors T 1 , T ' 1 mounted in Darlington, which gives it a significant current gain.
  • a small capacitor C 2 is connected between the base and the collector of T ' 1 and serves to prevent the entry into self-oscillation of the Darlington assembly.
  • the voltage V is rectified by a diode bridge P and a non-linear impedance K is provided, in a manner known per se, to limit the transient overvoltages.
  • the Zener Diode Z of the reference circuit is here connected to the emitter of the second transistor T 1 of the Darlington circuit, so that its correct polarization is ensured even for low values of the supply voltage, thanks to the large current which circulates in T l , without it being necessary to give the resistance R 2 a high value which would cause a significant dissipation of energy.
  • the basic current of T ' 1 flows through an additional transistor T 3 , polarized through the Zener diode Z and a resistor R o , then through a resistor R 1 , at the terminals of which a capacitor C is connected 1 and an additional Zener diode Z 1 .
  • the circuit R1 C provides, like the circuit R 1 C in FIG. 1, an image of the supply voltage; the transistor T 3 being in fact practically saturated, its emitter-base voltage is permanently close to 0.6 volts and does not intervene in the variation of the emitter voltage T 1 , essentially fixed by the Zener diode Z and by the voltage drop in R 1 .
  • a resistor R 5 in series with the Zener diode Z and the resistor R o , serve to limit the current flowing in the Darlington and in the Zener diode.
  • the emitter voltage of T 1 is practically fixed by Z.
  • R 2 intervenes in the value of this emitter voltage, until the moment where the influence of R 1 becomes preponderant.
  • the auxiliary Zener diode Z 1 limits the growth of the potential spike at the terminals of C, therefore on the emitter of T l , for the high values of the supply voltage and at the same time protects capacitor C.
  • a diode D 1 is connected between the point common to the resistors R 2 R 4 of the divider bridge and the point common to the load R and to the emitter of the transistor T 2 .
  • V the voltage across the terminals of R o continues to rise, so that protection of the transistor T 1 becomes necessary.
  • D 1 then ensures, for this purpose, the passage of a current, which flows through R, Z, R S and R 1 . This current continues to charge the capacitor C, but very weakly, therefore without significantly modifying the image of the supply voltage.
  • Such an arrangement ensures an almost constant average current in a supply voltage range from 24 to 240 v, with four light-emitting diodes connected in series in the collector of T 1 .

Abstract

1. Device for generating a regulated current, comprising a semi-conductor member (T1 ) playing the role of ballast resistance, fed by a rectified a-c source (V) and biased by a reference voltage (Zener diode Z), characterized by an auxiliary semi-conductor member (T2 ) connected in series with the semi-conductor ballast member (T1 ) and biased by a voltage divider (R3 -R4 ) connected to the terminals of said source.

Description

L'invention a pour objet un montage régulateur de courant à transistor ballast muni d'un transistor accessoire destiné à limiter la puissance dissipée dans le transistor ballast. Dans un dispositif traditionnel générateur de courant comportant un transistor "ballast" de régulation, lorsque la tension d'alimentation est une tension alternative redressée, la puissance dissipée dans le transistor ballast, donc l'échauffement subi par celui-ci, sont proportionnels à la valeur de crête de la tension d'alimentation et cet échauffement peut donc devenir excessif lorsque ladite tension prend des valeurs relativement élevées, supérieures à 100 volts par exemple.The subject of the invention is a current regulator assembly with a ballast transistor provided with an accessory transistor intended to limit the power dissipated in the ballast transistor. In a traditional current generator device comprising a regulation "ballast" transistor, when the supply voltage is a rectified alternating voltage, the power dissipated in the ballast transistor, therefore the heating undergone by it, are proportional to the peak value of the supply voltage and this heating can therefore become excessive when said voltage assumes relatively high values, greater than 100 volts for example.

Un premier objet de l'invention est un montage régulateur de courant à transistor ballast exempt de cet inconvénient et dans lequel le transistor ballast est protégé, par suppression du courant qui le traverse dès que la tension d'alimentation dépasse une certaine valeur de crête.A first object of the invention is a current regulator assembly with a ballast transistor free of this drawback and in which the ballast transistor is protected, by removing the current flowing through it as soon as the supply voltage exceeds a certain peak value.

Suivant un premier aspect de l'invention, ce résultat est obtenu grâce à un montage comportant un transistor ballast dont la base est polarisée par un circuit de référence comprenant une diode de Zener et alimenté à partir de la source d'alimentation alternative redressée, caractérisé par un transistor auxiliaire connecté en série avec le transistor ballast et dont la base est polarisée par une diviseur de tension branché entre les deux bornes de la source d'alimentation.According to a first aspect of the invention, this result is obtained by means of an assembly comprising a ballast transistor whose base is biased by a reference circuit comprising a Zener diode and supplied from the rectified AC power source, characterized by a auxiliary transistor connected in series with the ballast transistor and whose base is polarized by a voltage divider connected between the two terminals of the power source.

Dès que la tension de polarisation de base dudit transistor auxiliaire, qui dépend de la valeur de crête de la tension d'alimentation, dépasse sa tension d'émetteur, fixée par le circuit de référence, les deux transistors sont bloqués. Toutefois, si la tension de référence est constante, le courant de crête l'est également, si bien que le courant moyen est finalement une fonction décroissante de la tension d'alimentation. Or il peut être souhaitable de rendre le courant moyen constant ou, tout au moins, de pouvoir en maîtriser la loi de variation en fonction de la tension d'alimentation.As soon as the base bias voltage of said auxiliary transistor, which depends on the peak value of the supply voltage, exceeds its emitter voltage, fixed by the reference circuit, the two transistors are blocked. However, if the reference voltage is constant, the peak current is also constant, so that the average current is ultimately a decreasing function of the supply voltage. Now it may be desirable to make the mean current constant or, at least, to be able to control the law of variation as a function of the supply voltage.

Un autre objet de l'invention est un montage apte à obtenir un tel résultat.Another object of the invention is an assembly capable of obtaining such a result.

A titre d'exemple d'application d'un tel montage, on peut citer l'alimentation d'un voyant lumineux à diodes électro-luminescentes ; comme l'intensité lumineuse d'une telle diode est proportionnelle au courant moyen qui la traverse, on désire que celui-ci reste quasi-constant pour des tensions d'alimentation variant entre 24 et 240 volts par exemple.As an example of application of such an arrangement, mention may be made of the supply of a light indicator with light-emitting diodes; as the light intensity of such a diode is proportional to the average current flowing through it, it is desired that this remains almost constant for supply voltages varying between 24 and 240 volts for example.

Grâce à l'invention, ce résultat sera obtenu en branchant, de façon connue en soi, la ou les diodes électro-luminescentes en série dans le collecteur ou dans l'émetteur du transistor ballast.Thanks to the invention, this result will be obtained by connecting, in a manner known per se, the light-emitting diode (s) in series in the collector or in the emitter of the ballast transistor.

Suivant un second aspect de l'invention, dans un montage du genre susvisé, on maîtrise la loi de variation du courant en fonction de la valeur de crête de la tension d'alimentation en agençant ledit circuit de référence pour que la tension de référence obéisse à une loi de variation prédéterminée en fonction de la valeur de crête de la tension d'alimentation. Suivant un mode d'exécution préféré, ledit circuit de référence comprend une résistance en série avec une diode de Zener et un condensateur en parallèle sur l'ensemble série ainsi constitué.According to a second aspect of the invention, in an arrangement of the aforementioned type, the law of variation of the current is controlled as a function of the peak value of the supply voltage by arranging said reference circuit so that the reference voltage obeys to a predetermined variation law as a function of the peak value of the supply voltage. According to a preferred embodiment, said reference circuit comprises a resistor in series with a Zener diode and a capacitor in parallel on the series assembly thus formed.

D'autres particularités, ainsi que les avantages de l'invention, apparaîtront clairement à la lumière de la description ci-après.Other features, as well as the advantages of the invention, will become apparent in the light of the description below.

Au dessin annexé :

  • la figure 1 est un schéma de principe d'un montage conforme à un premier mode d'exécution ;
  • la figure 2 représente le courant dans la charge, en fonction du temps, dans un montage simplifié dans lequel la tension de référence est fixe ;
  • la figure 3 représente le courant dans la charge, en fonction du temps, dans le montage de la figure 1, et ;
  • la figure 4 représente une forme d'exécution préférée du montage.
In the attached drawing:
  • Figure 1 is a block diagram of an assembly according to a first embodiment;
  • FIG. 2 represents the current in the load, as a function of time, in a simplified assembly in which the reference voltage is fixed;
  • FIG. 3 represents the current in the load, as a function of time, in the assembly of FIG. 1, and;
  • Figure 4 shows a preferred embodiment of the assembly.

Les mêmes numéros de référence désignent des éléments homologues aux figures 1 et 4.The same reference numerals designate elements homologous to FIGS. 1 and 4.

A la figure 1, on a représenté deux transistors T1 T2 en série entre la masse et les bornes d'une source d'alimentation alternative redressée V. La charge R est montée dans l'émetteur de T1, dont la base est polarisée par la tension aux bornes d'un circuit composé d'une diode de Zener Z en série avec une résistance R1 et d'un condensateur C en parallèle. Ce circuit est alimenté par la tension V à travers une résistance R2. Du fait de la présence de la résistance R1, la tension Vc de polarisation de Tl croît en même temps que la valeur de crête V et il en est par conséquent de même de la tension d'émetteur V1 = Vc - 0,6 volt (0,6 volt étant la chute de tension base-émetteur de T1 et Vc, la tension aux bornes du condensateur C). La base de T2 est polarisée par un pont de résistances R3 R4 et, par conséquent, la tension d'émetteur V2 = kV + 0,6 volt avec k = R4 (0,6 volt étant R 3 + R 4 la chute de tension base-émetteur de T2, qui est d'un type opposé à T 1).In FIG. 1, two transistors T 1 T 2 are shown in series between the ground and the terminals of a rectified alternating power source V. The load R is mounted in the transmitter of T 1 , the base of which is polarized by the voltage across a circuit composed of a Zener diode Z in series with a resistor R 1 and a capacitor C in parallel. This circuit is supplied by the voltage V through a resistor R 2 . Due to the presence of the resistor R 1 , the bias voltage Vc of T l increases at the same time as the peak value V and it is therefore the same for the emitter voltage V 1 = V c - 0 , 6 volt (0.6 volt being the base-emitter voltage drop of T 1 and V c , the voltage across the capacitor C). The base of T 2 is polarized by a bridge of resistors R 3 R 4 and, consequently, the emitter voltage V 2 = kV + 0.6 volt with k = R 4 (0.6 volt being R 3 + R 4 the base-emitter voltage drop of T 2 , which is of a type opposite to T 1 ).

Il est évident que le courant I qui circule dans T1, la charge R et T2, s'annule dès que V2≥ V1, c'est-à-dire pour

Figure imgb0001
It is obvious that the current I which flows in T 1 , the charge R and T 2 , is canceled as soon as V 2 ≥ V 1 , that is to say for
Figure imgb0001

Le courant de crête

Figure imgb0002
serait constant si Vc était elle-même constante, c'est-à-dire fixée par la diode de Zener en l'absence de la résistance RI propre à l'invention. Les formes d'ondes du courant seraient alors telles que représentées à la figure 2, dans laquelle la courbe en trait plein représente le courant I pour une valeur relativement élevée de la tension d'alimentation de crête, tandis que la courbe en pointillé représente le courant I pour une valeur de crête relativement faible de V. On voit que, plus la valeur de crête de V est élevée, plus les pointes de courant sont de brève durée, si bien que le courant moyen décroît lorsque la valeur de crête de V croît. On notera que, dans un tel montage, même dépourvu de la résistance R1 en série avec la diode de Zener, le courant I s'annule dès que la tension V dépasse une certaine valeur, si bien que le transistor ballast T1 est protégé contre tout échauffement excessif.The peak current
Figure imgb0002
 would be constant if V c was itself constant, that is to say fixed by the Zener diode in the absence of the resistance R I specific to the invention. The waveforms of the current would then be as shown in FIG. 2, in which the curve in solid lines represents the current I for a relatively high value of the peak supply voltage, while the curve in dotted lines represents the current I for a relatively low peak value of V. It can be seen that the higher the peak value of V, the shorter the current spikes, so that the average current decreases when the peak value of V is growing. It will be noted that, in such an arrangement, even without the resistor R 1 in series with the Zener diode, the current I is canceled as soon as the voltage V exceeds a certain value, so that the ballast transistor T 1 is protected against excessive heating.

La résistance R1 supprime l'inconvénient d'un courant moyen décroissant en fonction de V en augmentant Vc lorsque la valeur de crête de V croît. La figure 3 représente la courbe I (t) pour trois valeurs décroissantes de la tension d'alimentation de crête (courbes A, B et C). On voit que, lorsque la valeur de crête de V croît, les pointes de courant ont une durée de plus en plus brève, mais une amplitude de plus en plus grande. En dosant cet effet par un choix convenable de la valeur de R1, on peut aboutir à un courant moyen pratiquement constant. La dissipation dans le transistor ballast T1 est faible, car les pointes de courant coincident avec les faibles valeurs instantanées de la tension d'alimentation.Resistor R 1 eliminates the drawback of an average current decreasing as a function of V by increasing V c when the peak value of V increases. FIG. 3 represents the curve I (t) for three decreasing values of the peak supply voltage (curves A, B and C). It can be seen that, when the peak value of V increases, the current peaks have an increasingly short duration, but an increasingly large amplitude. By measuring this effect by a suitable choice of the value of R 1 , one can obtain a practically constant mean current. The dissipation in the ballast transistor T 1 is low, because the current peaks coincide with the low instantaneous values of the supply voltage.

La figure 4 illustre un mode d'exécution préféré du montage. Le ballast, au lieu de comporter un tel transistor, est constitué par deux transistors T1, T'1 montés en Darlington, ce qui lui confère un gain en courant important. Un petit condensateur C2 est branché entre la base et le collecteur de T'1 et sert à empêcher l'entrée en auto-oscillation du montage Darlington. La tension V est redressée par un pont de diodes P et une impédance non linéaire K est prévue, de façon connue en soi, pour limiter les surtensions transitoires.Figure 4 illustrates a preferred embodiment of the mounting. The ballast, instead of comprising such a transistor, is formed by two transistors T 1 , T ' 1 mounted in Darlington, which gives it a significant current gain. A small capacitor C 2 is connected between the base and the collector of T ' 1 and serves to prevent the entry into self-oscillation of the Darlington assembly. The voltage V is rectified by a diode bridge P and a non-linear impedance K is provided, in a manner known per se, to limit the transient overvoltages.

La Diode de Zener Z du circuit de référence est ici reliée à l'émetteur du deuxième transistor T1 du montage Darlington, si bien que sa polarisation correcte est assurée même pour les faibles valeurs de la tension d'alimentation, grâce au courant important qui circule dans Tl, sans qu'il soit nécessaire de donner à la résistance R2 une valeur élevée qui entraînerait une dissipation importante d'énergie.The Zener Diode Z of the reference circuit is here connected to the emitter of the second transistor T 1 of the Darlington circuit, so that its correct polarization is ensured even for low values of the supply voltage, thanks to the large current which circulates in T l , without it being necessary to give the resistance R 2 a high value which would cause a significant dissipation of energy.

Le courant de base de T'1 s'écoule à travers un transistor supplémentaire T3, polarisé à travers la diode de Zener Z et une résistance Ro, puis à travers une résistance R1, aux bornes de laquelle sont branchés un condensateur C1 et une diode de Zener supplémentaire Z1. Le circuit R1 C fournit, comme le circuit R1 C de la figure 1, une image de la tension d'alimentation ; le transistor T3 étant en effet, pratiquement saturé, sa tension émetteur-base est en permanence voisine de 0,6 volt et n'intervient pas dans la variation de la tension d'émetteur T1, essentiellement fixée par la diode de Zener Z et par la chute de tension dans R1. Une résistance R5, en série avec la diode de Zener Z et la résistance Ro, servent à limiter le courant qui circule dans le Darlington et dans la diode de Zener.The basic current of T ' 1 flows through an additional transistor T 3 , polarized through the Zener diode Z and a resistor R o , then through a resistor R 1 , at the terminals of which a capacitor C is connected 1 and an additional Zener diode Z 1 . The circuit R1 C provides, like the circuit R 1 C in FIG. 1, an image of the supply voltage; the transistor T 3 being in fact practically saturated, its emitter-base voltage is permanently close to 0.6 volts and does not intervene in the variation of the emitter voltage T 1 , essentially fixed by the Zener diode Z and by the voltage drop in R 1 . A resistor R 5 , in series with the Zener diode Z and the resistor R o , serve to limit the current flowing in the Darlington and in the Zener diode.

Pour des tensions d'alimentation proches de 24 v, la tension d'émetteur de T1 est pratiquement fixée par Z. Lorsque la tension d'alimentation croît, R2 intervient dans la valeur de cette tension d'émetteur, jusqu'au moment où l'influence de R1 devient prépondérante.For supply voltages close to 24 v, the emitter voltage of T 1 is practically fixed by Z. When the supply voltage increases, R 2 intervenes in the value of this emitter voltage, until the moment where the influence of R 1 becomes preponderant.

La diode de Zener auxiliaire Z1 limite la croissance de la pointe de potentiel aux bornes de C, donc sur l'émetteur de Tl, pour les valeurs élevées de la tension d'alimentation et protège en même temps le condensateur C.The auxiliary Zener diode Z 1 limits the growth of the potential spike at the terminals of C, therefore on the emitter of T l , for the high values of the supply voltage and at the same time protects capacitor C.

Une diode D1 est connectée entre le point commun aux résistances R2 R4 du pont diviseur et le point commun à la charge R et à l'émetteur du transistor T2. Pour les valeurs de V pour lesquelles, comme on l'a expliqué en se référant à la figure 1, le courant s'annule dans la charge R, la tension aux bornes de Ro continue à monter, si bien qu'une protection du transistor T1 devient nécessaire. D1 assure alors, à cet effet, le passage d'un courant, qui circule à travers R, Z, RS et R1. Ce courant continue à charger le condensateur C, mais très faiblement, donc sans modifier sensiblement l'image de la tension d'alimentation.A diode D 1 is connected between the point common to the resistors R 2 R 4 of the divider bridge and the point common to the load R and to the emitter of the transistor T 2 . For the values of V for which, as explained with reference to FIG. 1, the current is canceled out in the load R, the voltage across the terminals of R o continues to rise, so that protection of the transistor T 1 becomes necessary. D 1 then ensures, for this purpose, the passage of a current, which flows through R, Z, R S and R 1 . This current continues to charge the capacitor C, but very weakly, therefore without significantly modifying the image of the supply voltage.

Un tel montage assure un courant moyen pratiquement constant dans une plage de tension d'alimentation allant de 24 à 240 v, avec quatre diodes électro-luminescentes montées en série dans le collecteur de T1.Such an arrangement ensures an almost constant average current in a supply voltage range from 24 to 240 v, with four light-emitting diodes connected in series in the collector of T 1 .

On notera que le montage Darlington pourrait être remplacé par un transistor à effet de champ. D'autres modifications pourront être envisagées sans s'écarter de l'esprit de l'invention.It should be noted that the Darlington circuit could be replaced by a field effect transistor. Other modifications could be envisaged without departing from the spirit of the invention.

Claims (8)

1. Montage générateur d'un courant régulé comportant un organe à semi-conducteur (T1) jouant le rôle de ballast, alimenté par une source de courant alternatif redressé (V) et polarisé par une tension de référence (diode de Zener Z) , caractérisé par un organe à semi-conducteur auxiliaire (T2,) connecté en série avec l'organe à semi-conducteur ballast (Tl) et polarisé par un diviseur de tension (R3 - R4) branché aux bornes de ladite source.1. Assembly generating a regulated current comprising a semiconductor member (T 1 ) playing the role of ballast, supplied by a rectified alternating current source (V) and polarized by a reference voltage (Zener diode Z) , characterized by an auxiliary semiconductor member (T 2 ,) connected in series with the ballast semiconductor member ( Tl ) and polarized by a voltage divider (R 3 - R 4 ) connected to the terminals of said source . 2. Montage générateur selon la revendication 1, caractérisé en ce que la tension de référence est fournie par un circuit (Z, R1, C) comportant des moyens (R1) d'ajouter, à une tension fixe (diode de Zener Z), une tension fonction de la tension d'alimentation (V).2. generator assembly according to claim 1, characterized in that the reference voltage is supplied by a circuit (Z, R 1 , C) comprising means (R 1 ) for adding, to a fixed voltage (Zener diode Z ), a voltage depending on the supply voltage (V). 3. Montage générateur selon la revendication 2, caractérisé en ce que ledit circuit comprend un condensateur (C) de mémorisation de la tension de référence, tandis que lesdits moyens d'ajouter une tension fonction de la tension d'alimentation comportent une résistance (R1).3. generator assembly according to claim 2, characterized in that said circuit comprises a capacitor (C) for memorizing the reference voltage, while said means for adding a voltage as a function of the supply voltage comprises a resistor (R 1 ). 4. Montage générateur selon la revendication 5, caractérisé en ce que ledit organe à semi-conducteur ballast est constitué par un montage Darlington (T'l T1).4. Generator assembly according to claim 5, characterized in that said ballast semiconductor member is constituted by a Darlington assembly (T ' l T 1 ). 5. Montage générateur selon la revendication 5, caractérisé en ce que ledit circuit de référence comprend, outre ladite diode de Zener (Z) reliée à l'émetteur du deuxième transistor (T1) du montage Darlington, un transistor supplémentaire (T3) branché entre la base du transistor T'1 du montage Darlington et une borne de la source d'alimentation, en série avec ladite résistance (R1), aux bornes de laquelle est branché ledit condensateur (C), la base dudit transistor (T3) étant reliée à ladite diode de Zener (Z) à travers une résistance auxiliaire (Ro).5. Generator assembly according to claim 5, characterized in that said reference circuit comprises, in addition to said Zener diode (Z) connected to the emitter of the second transistor (T 1 ) of the Darlington assembly, an additional transistor (T 3 ) connected between the base of transistor T ' 1 of the Darlington circuit and a terminal of the power source, in series with said resistor (R 1 ), at the terminals of which is connected said capacitor (C), the base of said transistor (T 3 ) being connected to said Zener diode (Z) through an auxiliary resistor (R o ). 6. Montage générateur selon la revendication 5, caractérisé par une diode de Zener supplémentaire (Z1) branchée aux bornes communes dudit condensateur (C) et de ladite résistance (R1).6. Generator assembly according to claim 5, characterized by an additional Zener diode (Z 1 ) connected to the common terminals of said capacitor (C) and said resistor (R 1 ). 7. Montage générateur selon la revendication 5 ou 6, caractérisé par une deuxième résistance auxiliaire (R5) reliant ladite résistance auxiliaire (R ) à ladite résistance (R1).7. Generator assembly according to claim 5 or 6, characterized by a second auxiliary resistance (R 5 ) connecting said auxiliary resistance (R) to said resistance (R 1 ). 8. Montage générateur selon la revendication 5, 6 ou 7, caractérisé par une diode (Dl) reliant le point commun aux résistances (R3 - R4) dudit diviseur de tension à l'émetteur du transistor auxiliaire (T2).8. generator assembly according to claim 5, 6 or 7, characterized by a diode (D l ) connecting the common point to the resistors (R 3 - R 4 ) of said voltage divider to the emitter of the auxiliary transistor (T 2 ).
EP19830401658 1982-09-10 1983-08-12 Current regulator apparatus with ballast transistor provided with a supplemental transistor to limit the average power dissipation of the ballast transistor Expired EP0103504B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8215327 1982-09-10
FR8215327A FR2533089A1 (en) 1982-09-10 1982-09-10 CURRENT REGULATOR ASSEMBLY WITH BALLAST TRANSISTOR PROVIDED WITH AN ACCESSORY TRANSISTOR FOR LIMITING THE AVERAGE POWER DISSIPATED IN THE BALLAST TRANSISTOR

Publications (2)

Publication Number Publication Date
EP0103504A1 true EP0103504A1 (en) 1984-03-21
EP0103504B1 EP0103504B1 (en) 1987-01-21

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Application Number Title Priority Date Filing Date
EP19830401658 Expired EP0103504B1 (en) 1982-09-10 1983-08-12 Current regulator apparatus with ballast transistor provided with a supplemental transistor to limit the average power dissipation of the ballast transistor

Country Status (3)

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EP (1) EP0103504B1 (en)
DE (1) DE3369409D1 (en)
FR (1) FR2533089A1 (en)

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ELECTRONIC DESIGN, vol. 18, no. 12, 7 juin 1970, page 102, Rochelle Park, US *
TOUTE L'ELECTRONIQUE, no. 406, janvier 1976, page 65, Paris, FR *
WIRELESS WORLD, vol. 82, no. 14, février 1976, page 77, Haywards Heath, GB *

Also Published As

Publication number Publication date
FR2533089A1 (en) 1984-03-16
DE3369409D1 (en) 1987-02-26
EP0103504B1 (en) 1987-01-21
FR2533089B1 (en) 1985-02-22

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