EP0103504A1 - Stromreglervorrichtung mit Ballasttransistor ausgerüstet mit einem zusätzlichen Transistor zum Begrenzen des Verlustleistungsmittelwertes im Ballasttransistor - Google Patents

Stromreglervorrichtung mit Ballasttransistor ausgerüstet mit einem zusätzlichen Transistor zum Begrenzen des Verlustleistungsmittelwertes im Ballasttransistor Download PDF

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Publication number
EP0103504A1
EP0103504A1 EP19830401658 EP83401658A EP0103504A1 EP 0103504 A1 EP0103504 A1 EP 0103504A1 EP 19830401658 EP19830401658 EP 19830401658 EP 83401658 A EP83401658 A EP 83401658A EP 0103504 A1 EP0103504 A1 EP 0103504A1
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EP
European Patent Office
Prior art keywords
transistor
voltage
ballast
zener diode
assembly according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19830401658
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English (en)
French (fr)
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EP0103504B1 (de
Inventor
Jean-Marc Macias
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telemecanique SA
Original Assignee
Telemecanique Electrique SA
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Publication date
Application filed by Telemecanique Electrique SA filed Critical Telemecanique Electrique SA
Publication of EP0103504A1 publication Critical patent/EP0103504A1/de
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Publication of EP0103504B1 publication Critical patent/EP0103504B1/de
Expired legal-status Critical Current

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes

Definitions

  • the subject of the invention is a current regulator assembly with a ballast transistor provided with an accessory transistor intended to limit the power dissipated in the ballast transistor.
  • a traditional current generator device comprising a regulation "ballast" transistor
  • the power dissipated in the ballast transistor therefore the heating undergone by it, are proportional to the peak value of the supply voltage and this heating can therefore become excessive when said voltage assumes relatively high values, greater than 100 volts for example.
  • a first object of the invention is a current regulator assembly with a ballast transistor free of this drawback and in which the ballast transistor is protected, by removing the current flowing through it as soon as the supply voltage exceeds a certain peak value.
  • this result is obtained by means of an assembly comprising a ballast transistor whose base is biased by a reference circuit comprising a Zener diode and supplied from the rectified AC power source, characterized by a auxiliary transistor connected in series with the ballast transistor and whose base is polarized by a voltage divider connected between the two terminals of the power source.
  • the base bias voltage of said auxiliary transistor which depends on the peak value of the supply voltage, exceeds its emitter voltage, fixed by the reference circuit, the two transistors are blocked.
  • the reference voltage is constant, the peak current is also constant, so that the average current is ultimately a decreasing function of the supply voltage.
  • Another object of the invention is an assembly capable of obtaining such a result.
  • the law of variation of the current is controlled as a function of the peak value of the supply voltage by arranging said reference circuit so that the reference voltage obeys to a predetermined variation law as a function of the peak value of the supply voltage.
  • said reference circuit comprises a resistor in series with a Zener diode and a capacitor in parallel on the series assembly thus formed.
  • FIG. 1 two transistors T 1 T 2 are shown in series between the ground and the terminals of a rectified alternating power source V.
  • the load R is mounted in the transmitter of T 1 , the base of which is polarized by the voltage across a circuit composed of a Zener diode Z in series with a resistor R 1 and a capacitor C in parallel.
  • the peak current would be constant if V c was itself constant, that is to say fixed by the Zener diode in the absence of the resistance R I specific to the invention.
  • the waveforms of the current would then be as shown in FIG. 2, in which the curve in solid lines represents the current I for a relatively high value of the peak supply voltage, while the curve in dotted lines represents the current I for a relatively low peak value of V. It can be seen that the higher the peak value of V, the shorter the current spikes, so that the average current decreases when the peak value of V is growing. It will be noted that, in such an arrangement, even without the resistor R 1 in series with the Zener diode, the current I is canceled as soon as the voltage V exceeds a certain value, so that the ballast transistor T 1 is protected against excessive heating.
  • Resistor R 1 eliminates the drawback of an average current decreasing as a function of V by increasing V c when the peak value of V increases.
  • FIG. 3 represents the curve I (t) for three decreasing values of the peak supply voltage (curves A, B and C). It can be seen that, when the peak value of V increases, the current peaks have an increasingly short duration, but an increasingly large amplitude. By measuring this effect by a suitable choice of the value of R 1 , one can obtain a practically constant mean current. The dissipation in the ballast transistor T 1 is low, because the current peaks coincide with the low instantaneous values of the supply voltage.
  • FIG 4 illustrates a preferred embodiment of the mounting.
  • the ballast instead of comprising such a transistor, is formed by two transistors T 1 , T ' 1 mounted in Darlington, which gives it a significant current gain.
  • a small capacitor C 2 is connected between the base and the collector of T ' 1 and serves to prevent the entry into self-oscillation of the Darlington assembly.
  • the voltage V is rectified by a diode bridge P and a non-linear impedance K is provided, in a manner known per se, to limit the transient overvoltages.
  • the Zener Diode Z of the reference circuit is here connected to the emitter of the second transistor T 1 of the Darlington circuit, so that its correct polarization is ensured even for low values of the supply voltage, thanks to the large current which circulates in T l , without it being necessary to give the resistance R 2 a high value which would cause a significant dissipation of energy.
  • the basic current of T ' 1 flows through an additional transistor T 3 , polarized through the Zener diode Z and a resistor R o , then through a resistor R 1 , at the terminals of which a capacitor C is connected 1 and an additional Zener diode Z 1 .
  • the circuit R1 C provides, like the circuit R 1 C in FIG. 1, an image of the supply voltage; the transistor T 3 being in fact practically saturated, its emitter-base voltage is permanently close to 0.6 volts and does not intervene in the variation of the emitter voltage T 1 , essentially fixed by the Zener diode Z and by the voltage drop in R 1 .
  • a resistor R 5 in series with the Zener diode Z and the resistor R o , serve to limit the current flowing in the Darlington and in the Zener diode.
  • the emitter voltage of T 1 is practically fixed by Z.
  • R 2 intervenes in the value of this emitter voltage, until the moment where the influence of R 1 becomes preponderant.
  • the auxiliary Zener diode Z 1 limits the growth of the potential spike at the terminals of C, therefore on the emitter of T l , for the high values of the supply voltage and at the same time protects capacitor C.
  • a diode D 1 is connected between the point common to the resistors R 2 R 4 of the divider bridge and the point common to the load R and to the emitter of the transistor T 2 .
  • V the voltage across the terminals of R o continues to rise, so that protection of the transistor T 1 becomes necessary.
  • D 1 then ensures, for this purpose, the passage of a current, which flows through R, Z, R S and R 1 . This current continues to charge the capacitor C, but very weakly, therefore without significantly modifying the image of the supply voltage.
  • Such an arrangement ensures an almost constant average current in a supply voltage range from 24 to 240 v, with four light-emitting diodes connected in series in the collector of T 1 .

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
EP19830401658 1982-09-10 1983-08-12 Stromreglervorrichtung mit Ballasttransistor ausgerüstet mit einem zusätzlichen Transistor zum Begrenzen des Verlustleistungsmittelwertes im Ballasttransistor Expired EP0103504B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8215327 1982-09-10
FR8215327A FR2533089A1 (fr) 1982-09-10 1982-09-10 Montage regulateur de courant a transistor ballast muni d'un transistor accessoire destine a limiter la puissance moyenne dissipee dans le transistor ballast

Publications (2)

Publication Number Publication Date
EP0103504A1 true EP0103504A1 (de) 1984-03-21
EP0103504B1 EP0103504B1 (de) 1987-01-21

Family

ID=9277345

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19830401658 Expired EP0103504B1 (de) 1982-09-10 1983-08-12 Stromreglervorrichtung mit Ballasttransistor ausgerüstet mit einem zusätzlichen Transistor zum Begrenzen des Verlustleistungsmittelwertes im Ballasttransistor

Country Status (3)

Country Link
EP (1) EP0103504B1 (de)
DE (1) DE3369409D1 (de)
FR (1) FR2533089A1 (de)

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ELECTRONIC DESIGN, vol. 18, no. 12, 7 juin 1970, page 102, Rochelle Park, US *
TOUTE L'ELECTRONIQUE, no. 406, janvier 1976, page 65, Paris, FR *
WIRELESS WORLD, vol. 82, no. 14, février 1976, page 77, Haywards Heath, GB *

Also Published As

Publication number Publication date
DE3369409D1 (en) 1987-02-26
EP0103504B1 (de) 1987-01-21
FR2533089B1 (de) 1985-02-22
FR2533089A1 (fr) 1984-03-16

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