EP0068077A1 - Etching process with vibrationally excited SF6 - Google Patents

Etching process with vibrationally excited SF6 Download PDF

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Publication number
EP0068077A1
EP0068077A1 EP82102404A EP82102404A EP0068077A1 EP 0068077 A1 EP0068077 A1 EP 0068077A1 EP 82102404 A EP82102404 A EP 82102404A EP 82102404 A EP82102404 A EP 82102404A EP 0068077 A1 EP0068077 A1 EP 0068077A1
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EP
European Patent Office
Prior art keywords
substrate
mask
openings
laser
laser light
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Granted
Application number
EP82102404A
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German (de)
French (fr)
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EP0068077B1 (en
Inventor
Tung Jung Chuang
John Wyllie Coburn
Eric Kay
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International Business Machines Corp
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International Business Machines Corp
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Publication of EP0068077A1 publication Critical patent/EP0068077A1/en
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Publication of EP0068077B1 publication Critical patent/EP0068077B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Abstract

A substrate (e.g. of silicon) which forms a volatile fluoride is etched and directionality is achieved using vibrationally excited SF3 which has been exposed to laser irradiation. The substrate is etched through a mask having openings smaller than the diffraction limit of the laser light.

Description

  • The present invention is concerned with a process for selectively etching a substrate which forms a volatile fluoride, with vibrationally excited SF6. Such etching is valuable, for example, in the construction of micro circuits.
  • The article by Chuang in the Journal of Chemical Phys. 72 (11) June 1980 p 6303, describes the reaction of vibrationally excited SF6 molecules on a silicon substrate. This article, however, is entirely silent in regard to one of the critical features of the present invention, namely, the use of a mask with openings smaller than the diffraction limit of the laser light.
  • According to the present invention a substrate which is capable of forming a volatile fluoride is selectively etched by covering portions of it with a non-erodible mask containing openings and contacting the uncovered portions of the substrate with SF6 which has been-vibrationally excited by irradiation with a laser light. Directionality is achieved. It is a critical feature of the present invention that the openings in said mask are sma.ller than the diffraction limit of the laser light. When it is said that the openings are smaller than the diffraction limit of the laser light, it is meant that the openings have a minimum linewidth smaller than the diffraction limit. In the case of a circular opening, the minimum linewidth would be the diameter. In the case of a slit line opening, the minimum linewidth would be simply the width of the slit.
  • The present process is applicable to any substrate which forms a volatile fluoride. In particular, it is applicable to silicon, tantalum, titanium, tungsten and molybdenum.
  • How the invention can be carried out will now be described by way of example, with reference to the accompanying drawings, in which:-
    • FIGURE 1 (not to scale) is a diagram of one conventional apparatus suitable for use in the process of the present invention; and
    • FIGURE 2 (not to scale) is a diagram illustrating the concept of directional etching which is obtained using the process of the present invention.
  • In the operation of the process of the present invention, vibrationally excited SF6 molecules react with a substrate such as silicon to form volatile compounds, for example, SiF4. Vibrationally excited SF6 is easily generated by exciting SF 6 molecules with a carbon dioxide laser. It is essential to distinguish the process of the present invention using vibrationally excited SF6 molecules from previously well-known multiphoton dissociation of SF6. The process of the present invention has many advantages over the prior art dissociative process as will be discussed below.
  • Turning again to Figure 1, illustrating an apparatus suitable for use in the process of the present invention, a C02 laser with appropriate focusing optics is used in conjunction with a small vacuum chamber equipped with a mechanical pump and an SF6 gas admission system. The substrate to be etched, for example a silicon wafer, is placed below an IR transparent window through which the laser shines.
  • Turning next to Figure 2, the actual etching process is diagrammatically shown. The substrate is selectively covered with a non-erodible mask containing openings, one of which is shown in Figure 2. This non-erodible mask can satisfactorily be made of such materials as silicon dioxide or aluminium. The SF6 molecules are in contact with the uncovered portions of the substrate. The laser irradiation shines through the openings in the mask and vibrationally excites the SF6 molecules which then react with the substrate to form a volatile fluoride. Etching is thus accomplished.
  • A very important feature of the present process is the limited and controllable range of the vibrationally excited SF6 molecules, which are often represented as SF6 *. These excited molecules relax back to chemically inert SF6 after collision with other SF6 molecules. Therefore, only vibrationally excited SF6 molecules which are created near the substrate surface will survive long enough to react with the substrate. The range or mean-free path of the excited SF6 species is inversely proportional to the SF6 gas pressure. The consequences of this limited and controllable range are directional etching, where the width of the etched feature is equal to the dimension of the opening in the mask plus twice the range of the vibrationally active SF 6 species. (This range is shown by λ in Figure 2.) It should be noted that the range of vibrationally excited SF molecules, at 760 TORR (1.01 x 10 N/m2) of SF, is 0 6 6 only about 1500A.
  • An additional advantage of the present invention is that the process has no loading effect, that is, the etch rate does not depend on wafer area. Furthermore, there is no etch rate dependence of any kind on vacuum system parameters so long as the gas flow is adequate to remove the volatile fluoride etch product. Additionally, no active species reach the pumping system. Thus, problems associated with pumping toxic gases are avoided.
  • With the present process, etch rates on the order of thousands of 0 0 A units per minute can be obtained. Silicon etch rates are about 1 A per laser pulse and laser pulse rates of 100 HZ are easily available. Wafer heating is not a problem because the laser power density must be kept below the threshold density required for the multiphoton dissociation of SF6 and the high SF 6 gas pressure which is used helps to cool the wafer.
  • It should again be emphasized that a critical feature of the present invention is the use of a mask with openings smaller than the diffraction limit of the laser light. Prior to the present invention, it would have been expected that when using the C02 laser, the best resolution for etching would have been limited by the diffraction limit of the light whose wavelength is 10.6pm. We have found that this is not the case and that, in fact, by using a mask with openings smaller than the diffraction limit of the laser light, high resolution etching with no undercutting is obtained. It should be mentioned that in one preferred variation of the present invention, the openings in the mask are approximately a full order of magnitude smaller than the diffraction limit of the laser light. That is to say, the openings in the mask are on the order of about lµm.
  • The present invention has several advantages over prior art plasma etching. The present process does not result in etching of the mask, therefore, photoresist masks may be used. In the present process directionality is simply controlled by pressure, whereas in plasma etching it involves control of neutral vs. ion enhanced chemistry. Furthermore, the present process lends itself very readily to scaling up, because the etching chemistry is very localized, that is, independent of apparatus dimensions.
  • It should be emphasized that the present invention, unlike the prior art which emphasized laser induced fragmentation, relies upon vibrationally excited molecules having a very short lifetime and obtained by using low energy density (about 1 joule per cm2) with 10 megawatt per cm2 per pulse. Because of the low power there is no laser induced damage. The lifetime of the vibrationally excited species leads to high resolution. The directionality can be controlled by varying the pressure and subsequent lifetime. At 20 TORR (2.66 x 103 N/m2) the resolution is about 10 microns. At 200 TORR (2.66 x 104 N/m2) the resolution is 1 micron. At atmospheric pressure the resolution is about 0.3 microns.

Claims (8)

1. A process for etching a substrate which forms a volatile fluoride comprising selectively covering portions of the substrate with a non-erodible mask containing openings, contacting the uncovered portions of the substrate with SF6, and vibrationally exciting the SF6 by exposing it to irradiation with laser light, characterised in that the openings in said mask are smaller than the diffraction limit of the laser light.
2. A process as claimed in claim 1, in which low energy density, of about 1 joule per cm2, is used.
3. A process as claimed in claim 1 or claim 2, wherein the source of the laser light is a pulsed CO2 laser.
4. A process as claimed in claim 3, in which a laser pulse rate of 100 HZ is used.
5. A process as claimed in any preceding claim, wherein the openings in said mask are of the order of about lµm in minimum linewidth.
6. A process as claimed in any preceding claim, in which the pressure of the SF6 is about 760 TORR (1.01 x 105 N/m2).
7. A process as claimed in any of claims 1 to 6, wherein the substrate is silicon.
8. A process as claimed in any of claims 1 to 6, wherein the substrate is tantalum, or titanium, or tungsten, or molybdenum.
EP82102404A 1981-06-25 1982-03-23 Etching process with vibrationally excited sf6 Expired EP0068077B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US277364 1981-06-05
US06/277,364 US4331504A (en) 1981-06-25 1981-06-25 Etching process with vibrationally excited SF6

Publications (2)

Publication Number Publication Date
EP0068077A1 true EP0068077A1 (en) 1983-01-05
EP0068077B1 EP0068077B1 (en) 1985-02-06

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EP82102404A Expired EP0068077B1 (en) 1981-06-25 1982-03-23 Etching process with vibrationally excited sf6

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US (1) US4331504A (en)
EP (1) EP0068077B1 (en)
JP (1) JPS583233A (en)
CA (1) CA1153674A (en)
DE (1) DE3262190D1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0150358A2 (en) * 1984-01-24 1985-08-07 International Business Machines Corporation Laser induced dry chemical etching of metals
EP0196346A1 (en) * 1985-04-02 1986-10-08 International Business Machines Corporation Apparatus for manufacturing surface structures in the nanometer range

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* Cited by examiner, † Cited by third party
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JPS59135730A (en) * 1983-01-24 1984-08-04 Hitachi Ltd Device for surface modification
US4490211A (en) * 1984-01-24 1984-12-25 International Business Machines Corporation Laser induced chemical etching of metals with excimer lasers
JPS60253230A (en) * 1984-05-29 1985-12-13 Mitsubishi Electric Corp Formation of fine pattern
KR920004171B1 (en) * 1984-07-11 1992-05-30 가부시기가이샤 히다찌세이사꾸쇼 Dry etching apparatus
JPH086184B2 (en) * 1985-06-12 1996-01-24 株式会社日立製作所 Surface treatment method
US4648938A (en) * 1985-10-11 1987-03-10 The United States Of America As Represented By The United States Department Of Energy Composition/bandgap selective dry photochemical etching of semiconductor materials
US4622095A (en) * 1985-10-18 1986-11-11 Ibm Corporation Laser stimulated halogen gas etching of metal substrates
US4684436A (en) * 1986-10-29 1987-08-04 International Business Machines Corp. Method of simultaneously etching personality and select
US5011567A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Method of fabricating solar cells
US5322988A (en) * 1990-03-29 1994-06-21 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
US5493445A (en) * 1990-03-29 1996-02-20 The United States Of America As Represented By The Secretary Of The Navy Laser textured surface absorber and emitter
US5389196A (en) * 1992-01-30 1995-02-14 Massachusetts Institute Of Technology Methods for fabricating three-dimensional micro structures
US6033721A (en) * 1994-10-26 2000-03-07 Revise, Inc. Image-based three-axis positioner for laser direct write microchemical reaction
US5607601A (en) * 1995-02-02 1997-03-04 The Aerospace Corporation Method for patterning and etching film layers of semiconductor devices
US6165688A (en) * 1996-05-15 2000-12-26 The United States Of America, As Represented By The Secretary Of Commerce Method of fabricating of structures by metastable atom impact desorption of a passivating layer
US20030155328A1 (en) * 2002-02-15 2003-08-21 Huth Mark C. Laser micromachining and methods and systems of same
GB2399311B (en) * 2003-03-04 2005-06-15 Xsil Technology Ltd Laser machining using an active assist gas
US6969822B2 (en) * 2003-05-13 2005-11-29 Hewlett-Packard Development Company, L.P. Laser micromachining systems
US7754999B2 (en) 2003-05-13 2010-07-13 Hewlett-Packard Development Company, L.P. Laser micromachining and methods of same
GB2404280B (en) * 2003-07-03 2006-09-27 Xsil Technology Ltd Die bonding

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183780A (en) * 1978-08-21 1980-01-15 International Business Machines Corporation Photon enhanced reactive ion etching
EP0015403A1 (en) * 1979-02-21 1980-09-17 International Business Machines Corporation Process for reactive ion-etching of silicon

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756807A (en) * 1969-09-29 1971-03-29 Motorola Inc PROCESS FOR NON-PREFERENTIAL ENGRAVING OF SILICON BY A GAS MIXTURE, AND GAS MIXTURE FOR THIS ENGRAVING
US3866398A (en) * 1973-12-20 1975-02-18 Texas Instruments Inc In-situ gas-phase reaction for removal of laser-scribe debris
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183780A (en) * 1978-08-21 1980-01-15 International Business Machines Corporation Photon enhanced reactive ion etching
EP0015403A1 (en) * 1979-02-21 1980-09-17 International Business Machines Corporation Process for reactive ion-etching of silicon

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF CHEMICAL PHYSICS, Vol. 72, No. 11, June 1980, Lancaster, T.J. CHUANG: "Infrared Laser Induced Reaction of SF6 with Silicon Surfaces", pages 6303, 6304 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0150358A2 (en) * 1984-01-24 1985-08-07 International Business Machines Corporation Laser induced dry chemical etching of metals
EP0150358A3 (en) * 1984-01-24 1986-08-13 International Business Machines Corporation Laser induced dry chemical etching of metals
EP0196346A1 (en) * 1985-04-02 1986-10-08 International Business Machines Corporation Apparatus for manufacturing surface structures in the nanometer range

Also Published As

Publication number Publication date
US4331504A (en) 1982-05-25
EP0068077B1 (en) 1985-02-06
CA1153674A (en) 1983-09-13
DE3262190D1 (en) 1985-03-21
JPS583233A (en) 1983-01-10

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