EP0048838B1 - Schaltungsanordnung zur belastungsproportionalen Einstellung des Ansteuerstroms eines in Emitterschaltung betriebenen Eintakt-Endstufentransistors eines Transistorverstärkers - Google Patents

Schaltungsanordnung zur belastungsproportionalen Einstellung des Ansteuerstroms eines in Emitterschaltung betriebenen Eintakt-Endstufentransistors eines Transistorverstärkers Download PDF

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Publication number
EP0048838B1
EP0048838B1 EP81106914A EP81106914A EP0048838B1 EP 0048838 B1 EP0048838 B1 EP 0048838B1 EP 81106914 A EP81106914 A EP 81106914A EP 81106914 A EP81106914 A EP 81106914A EP 0048838 B1 EP0048838 B1 EP 0048838B1
Authority
EP
European Patent Office
Prior art keywords
transistor
emitter
output stage
circuit
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP81106914A
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German (de)
English (en)
French (fr)
Other versions
EP0048838A1 (de
Inventor
Gerhard Dipl.-Ing. Gehring
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0048838A1 publication Critical patent/EP0048838A1/de
Application granted granted Critical
Publication of EP0048838B1 publication Critical patent/EP0048838B1/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A

Definitions

  • the present invention relates to a circuit arrangement for setting the drive current of a single-ended output stage transistor of a transistor amplifier operated in an emitter circuit for a variable load of the output stage transistor, the drive current being supplied to the output stage transistor via a control branch.
  • control current can be very high in relation to the total current consumption at low current amplifications and can be, for example, in the range of 50% and possibly also 75% of the total current and more. This is particularly troublesome in the case of integrated standard circuits, which are to be used unchanged for different load currents without external intervention, because the dimensioning must be designed for the highest load currents, but the same circuit should also be used in applications with very low load currents in which the available supply currents are usually also very small.
  • the disadvantage compared to the simple emitter circuit of a single-ended output stage transistor is a higher saturation voltage of about 0.9 V by a base emitter voltage.
  • collector currents of the transistors of the push-pull stage are directly proportional to the collector currents of the feedback transistors.
  • this measure serves to regulate the overall gain, to reduce the distortion and to regulate the quiescent currents of the output transistors, but not to set the drive currents of the output stage transistors for changing loads.
  • the present invention is based on the object of specifying a possibility for the load-proportional control of a single-ended output stage operated in an emitter circuit, in which the aforementioned residual voltage problem does not occur.
  • the solution according to the invention defined above is based on the knowledge that the base-emitter voltage of the output stage transistor or output transistor is a function of the output current and increases logarithmically with it. Information about the actually flowing output current is therefore available at the base-emitter path of the output stage transistor or output transistor without intervening in the load circuit and without the impedance conditions in the load circuit having to be changed by emitter resistors.
  • a transistor T 2 operated in an emitter circuit forms a single-ended output stage of a transistor amplifier.
  • a load on a battery voltage + U B is a load on a battery voltage + U B.
  • the load is in the present Embodiment shown for the sake of simplicity as a load resistance R L. In practice, this load can be formed by the input resistance of a further circuit, for example an integrated TTL circuit.
  • the base-emitter voltage of the output stage transistor T 2 is detected via a sampling transistor T 3 .
  • This detection or evaluation of the base-emitter voltage of the output transistor T 2 is particularly simple in integrated circuits.
  • the sampling transistor T arranged according to Figure 3 a special feature of the invention in the same semiconductor crystal in the immediate vicinity of the output transistor T 2, it provides, under the condition of the same geometry with the same base-emitter voltage the same current as the output transistor T 2. With smaller dimensions of the scanning transistor T 3 with respect to the output transistor T 2 , the current is smaller by a defined factor.
  • the current flowing in the scanning transistor T 3 can now be fed back as an available drive current via a coupling circuit.
  • This coupling circuit is mirrored in the present exemplary embodiment by a current mirror formed by transistors T 4 and T 5 at the supply voltage + U B.
  • This current mirror has a defined current gain of in particular approximately 1.
  • the collector of a drive transistor T i is fed via the current mirror T 4 , T 5 and is driven at its base by a current source 10 and, if appropriate, by a transistor T 6 controlled by preliminary stages (not shown) of the transistor amplifier.
  • control circuit may include more complex circuits
  • the transistor T 6 is shown in dashed lines.
  • a small emitter resistance R e can be provided as compensation for the path resistances of the output stage transistor T 2 , which cause a somewhat increased base-emitter voltage, which, since this is not absolutely necessary, is dashed is shown.
  • a specific load current flows through the circuit of the output transistor T 2 .
  • a drive current flows in the circuit of the current source 10, which is proportional to the quotient of the actually flowing load current and the product of the current gains of the transistors T 1 and T 2 .
  • the residual voltage at the collector-emitter path of the output transistor T 2 is only the saturation voltage of this transistor. This has the advantage over a Darlington configuration explained at the outset from the load transistor T 2 and a further upstream transistor that the residual voltage is smaller because in a Darlington configuration the residual voltage is equal to the sum of the base-emitter voltage of the output stage transistor and the saturation voltage of the Darlington stage input transistor.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
EP81106914A 1980-09-29 1981-09-03 Schaltungsanordnung zur belastungsproportionalen Einstellung des Ansteuerstroms eines in Emitterschaltung betriebenen Eintakt-Endstufentransistors eines Transistorverstärkers Expired EP0048838B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3036736 1980-09-29
DE3036736A DE3036736C2 (de) 1980-09-29 1980-09-29 Schaltungsanordnung zur belastungsproportionalen Einstellung des Ansteuerstroms eines in Emitterschaltung betriebenen Eintakt-Endstufentransistors eines Transistorverstärkers

Publications (2)

Publication Number Publication Date
EP0048838A1 EP0048838A1 (de) 1982-04-07
EP0048838B1 true EP0048838B1 (de) 1985-03-13

Family

ID=6113158

Family Applications (1)

Application Number Title Priority Date Filing Date
EP81106914A Expired EP0048838B1 (de) 1980-09-29 1981-09-03 Schaltungsanordnung zur belastungsproportionalen Einstellung des Ansteuerstroms eines in Emitterschaltung betriebenen Eintakt-Endstufentransistors eines Transistorverstärkers

Country Status (4)

Country Link
US (1) US4442411A (enrdf_load_stackoverflow)
EP (1) EP0048838B1 (enrdf_load_stackoverflow)
JP (1) JPS5787607A (enrdf_load_stackoverflow)
DE (2) DE3036736C2 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1200915B (it) * 1985-12-23 1989-01-27 Sgs Microelettronica Spa Stadio di amplificazione di corrente a bassa caduta di tensione
US4823070A (en) 1986-11-18 1989-04-18 Linear Technology Corporation Switching voltage regulator circuit
US4758798A (en) * 1987-04-10 1988-07-19 Cross Technology, Inc. Output amplifier
US4771228A (en) * 1987-06-05 1988-09-13 Vtc Incorporated Output stage current limit circuit
JPH0313008A (ja) * 1989-06-09 1991-01-22 Nec Kansai Ltd スイッチング回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187472A (en) * 1978-01-30 1980-02-05 Beltone Electronics Corporation Amplifier employing matched transistors to provide linear current feedback

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3531660A (en) * 1967-11-21 1970-09-29 Ampex Digital coaxial line driver
US3577167A (en) * 1968-02-29 1971-05-04 Rca Corp Integrated circuit biasing arrangements
US3582689A (en) * 1968-10-23 1971-06-01 Canadian Patents Dev Current conveyor with virtual input reference potential
US3701032A (en) * 1971-02-16 1972-10-24 Rca Corp Electronic signal amplifier
DE2508363A1 (de) * 1975-02-26 1976-09-02 Siemens Ag Schaltungsanordnung zur verbesserung der belastbarkeit von operationsverstaerkern
US4074181A (en) * 1975-12-04 1978-02-14 Rca Corporation Voltage regulators of a type using a common-base transistor amplifier in the collector-to-base feedback of the regulator transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187472A (en) * 1978-01-30 1980-02-05 Beltone Electronics Corporation Amplifier employing matched transistors to provide linear current feedback

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Siemens Sonderdruck "TAA 861- ein wirtschaftlicher und vielseitiger Operationsverstärker" *

Also Published As

Publication number Publication date
DE3036736C2 (de) 1982-10-21
DE3036736A1 (de) 1982-07-22
JPS5787607A (en) 1982-06-01
US4442411A (en) 1984-04-10
DE3169264D1 (en) 1985-04-18
JPH0255963B2 (enrdf_load_stackoverflow) 1990-11-28
EP0048838A1 (de) 1982-04-07

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