EP0035082B1 - Temperaturbeständiges dielektrisches Material für sehr hohe Frequenzen und Verfahren zu seiner Herstellung - Google Patents

Temperaturbeständiges dielektrisches Material für sehr hohe Frequenzen und Verfahren zu seiner Herstellung Download PDF

Info

Publication number
EP0035082B1
EP0035082B1 EP80401897A EP80401897A EP0035082B1 EP 0035082 B1 EP0035082 B1 EP 0035082B1 EP 80401897 A EP80401897 A EP 80401897A EP 80401897 A EP80401897 A EP 80401897A EP 0035082 B1 EP0035082 B1 EP 0035082B1
Authority
EP
European Patent Office
Prior art keywords
dielectric material
grinding
temperature
starting materials
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP80401897A
Other languages
English (en)
French (fr)
Other versions
EP0035082A1 (de
Inventor
Jean-Claude Mage
Claude Deljurie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to AT80401897T priority Critical patent/ATE6628T1/de
Publication of EP0035082A1 publication Critical patent/EP0035082A1/de
Application granted granted Critical
Publication of EP0035082B1 publication Critical patent/EP0035082B1/de
Expired legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics

Definitions

  • the invention relates to a dielectric material stable in temperature and having a high dielectric constant and very low losses, which makes it suitable for manufacturing dielectric resonators operating at frequencies higher than 1 gigahertz, in particular filters and oscillators.
  • the product Q. f, for a frequency of 8 GHz, is of the order of 30 to 40 terahertz for temperature table materials.
  • the invention aims to improve the quality criterion, by increasing the product Q ⁇ f in the band from 2 to 100 GHz without compromising the temperature stability.
  • the invention also relates to a process for manufacturing a dielectric material, characterized in that it comprises at least one step of grinding the raw materials and a step of sintering at a temperature of 1400 ° C to 1500 ° C.
  • the molar percentage of tin oxide is plotted on the abscissa relative to the number of moles of titanium oxide.
  • a parameter ⁇ f defined below was plotted expressing the drift of the first order in temperature, of the resonant frequency of the material, for each abscissa composition x.
  • the development in series, limited to the first two terms, of the relative drift of the resonance frequency f is the following: where f o is the resonance frequency at temperature T o of 25 ° C.
  • Figure 2 we have plotted on the abscissa, on a logarithmic scale, the parameter giving the number of moles of iron oxide Fe 2 0 3 in the finished product for one mole of Ti0 2 .
  • the quality criterion Q - f has been taken in terahertz for a material whose composition is given by formula (2) above.
  • the maximum of the curve corresponds to a proportion of 0.25% by weight of iron in the initial mixture.
  • Figure 3 shows the variation of the resonant frequency of a sample of material on either side of the point M o of abscissa To (25 ° C).
  • the coefficient B of the formula (1) given above is negative and of the order of 2. 10- 5.
  • the invention applies to dielectric resonators used to form very high frequency oscillators and filters.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Claims (10)

1. Dielektrisches Material von der Art, wie es gemäß der Technologie der Herstellung einer Keramik erhalten wird, umfassend mindestens eine Stufe des Sinterns von vorher fein vermahlenen Ausgangsmaterialien in oxidierender Atmosphäre, wobei diese Ausgangsmaterialien als Hauptbestandteile Titanoxid (Ti02), Zinnoxid (Sn02) und Zirkoniumoxid (Zr02) und außerdem Zusätze wie Lanthanoxid (La203) enthalten, dadurch gekennzeichnet, daß die Zusätze außerdem Nickeloxid (NiO) und Eisen umfassen, daß die molaren Anteile der Ausgangsmaterialien die folgenden sind:
Figure imgb0010
mit
0,9≤t≤1,1
0,1 ≤x≤0,4
0,6≤y≤0,9
0,015≤a≤0,06
0,01 ≤b≤0,1
c etwa 0,0035
sowie dadurch, daß die oxidierende Atmosphäre aus reinem Sauerstoff besteht.
2. Dielektrisches Material nach Anspruch 1, dadurch gekennzeichnet, daß die Parameter t, x und y den folgenden Ungleichungen gehorchen:
0,99≤t≤1,01
0,30≤x≤0,38
0,60≤y≤0,70
3. Dielektrisches Material nach Anspruch 1, dadurch gekennzeichnet, daß die Parameter t, x, y, a, b und c den folgenden Gleichungen gehorchen:
t = 1,003
x = 0,325
y = 0,642
a =0,03
b=0,015
c = 0,0035
4. Dielektrisches Material nach Anspruch 1, dadurch gekennzeichnet, daß die Parameter t, x, y, a, b und c den folgenden Gleichungen gehorchen:
t = 1,005
x = 0,325
y=0,644
a = 0,03
b=0,015
c = 0,0035
5. Dielektrisches Material nach Anspruch 1, dadurch gekennzeichnet, daß die Parameter t, x, y, a, b und c den folgenden Gleichungen gehorchen:
t=1
x = 0,25
y=0,75
a = 0,03
b=0,015
c = 0,0035
6. Verfahren zur Herstellung eines dielektrischen Materials gemäß einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß es mindestens eine Stufe des Vermahlens der Ausgangsmaterialien und eine Stufe des Sinterns bei einer Temperatur von 1400 bis 1500° C umfaßt.
7. Verfahren nach Anspruch 6, dadurch gekennzeichnet, daß das Eisen im Verlaufe der Stufe des Vermahlens durch Verwendung einer Stahlmühle eingeführt wird.
8. Verfahren nach Anspruch 7, dadurch gekennzeichnet, daß die Stufe des Vermahlens unter Verwendung von Stahlkugeln mit einem Durchmesser von 3 mm während einer Dauer von 20 Minuten durchgeführt wird.
9. Verfahren nach Anspruch 7, dadurch gekennzeichnet, daß die Stufe des Sinterns während 6 Stunden bei einer Temperatur von 1450° C durchgeführt wird.
10. Verfahren nach einem der Ansprüche 6 bis 9, dadurch gekennzeichnet, daß das Titanoxid (Ti02) beim Abwiegen der Ausgangsmaterialien im Unterschuß eingewogen wird.
EP80401897A 1980-02-29 1980-12-31 Temperaturbeständiges dielektrisches Material für sehr hohe Frequenzen und Verfahren zu seiner Herstellung Expired EP0035082B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT80401897T ATE6628T1 (de) 1980-02-29 1980-12-31 Temperaturbestaendiges dielektrisches material fuer sehr hohe frequenzen und verfahren zu seiner herstellung.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8004601 1980-02-29
FR8004601A FR2477137A1 (fr) 1980-02-29 1980-02-29 Materiau dielectrique stable en temperature utilisable en tres haute frequence, et son procede de fabrication; resonateur dielectrique, oscillateur et filtre utilisant ce materiau

Publications (2)

Publication Number Publication Date
EP0035082A1 EP0035082A1 (de) 1981-09-09
EP0035082B1 true EP0035082B1 (de) 1984-03-14

Family

ID=9239186

Family Applications (1)

Application Number Title Priority Date Filing Date
EP80401897A Expired EP0035082B1 (de) 1980-02-29 1980-12-31 Temperaturbeständiges dielektrisches Material für sehr hohe Frequenzen und Verfahren zu seiner Herstellung

Country Status (7)

Country Link
US (1) US4339543A (de)
EP (1) EP0035082B1 (de)
JP (1) JPS56136407A (de)
AT (1) ATE6628T1 (de)
CA (1) CA1150045A (de)
DE (1) DE3067074D1 (de)
FR (1) FR2477137A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153604A (ja) * 1984-01-23 1985-08-13 Taiyo Yuden Co Ltd 誘電体磁器組成物
FR2596911B1 (fr) * 1986-04-04 1989-05-26 Thomson Csf Materiau dielectrique a grande stabilite en temperature
US4785375A (en) * 1987-06-11 1988-11-15 Tam Ceramics, Inc. Temperature stable dielectric composition at high and low frequencies
US5132258A (en) * 1990-08-21 1992-07-21 Sanyo Electric Co., Ltd. Microwave dielectric ceramic composition
JPH04274106A (ja) * 1991-02-28 1992-09-30 Taiyo Yuden Co Ltd 誘電体磁器の製造方法
US5356843A (en) * 1992-09-10 1994-10-18 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic compositions and dielectric resonators
KR960004395B1 (ko) * 1993-09-02 1996-04-02 한국과학기술연구원 고주파용 유전체 자기 조성물
KR970005883B1 (ko) * 1994-07-19 1997-04-21 한국과학기술연구원 고주파 유전체 자기조성물 및 그 제조방법
FR2847747B1 (fr) * 2002-11-22 2005-02-18 Thales Sa Convertisseur analogique/numerique pour hyperfrequences
US7252446B2 (en) * 2004-03-31 2007-08-07 Brother Kogoy Kabushiki Kaisha Image forming apparatus
CN102807364B (zh) * 2012-09-06 2014-07-23 山东国瓷功能材料股份有限公司 一种τf可调高Q值微波介质材料

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1418388A (fr) * 1963-11-30 1965-11-19 Rosenthal Isolatoren Gmbh Diélectrique céramique
DE2264260A1 (de) * 1972-01-04 1973-07-12 Gen Electric Co Ltd Dielektrischer werkstoff und verwendung des werkstoffs als bauelement in einem mikrowellengeraet
DE2634146A1 (de) * 1975-07-31 1977-02-03 Murata Manufacturing Co Dielektrische keramikmassen
DE2634145A1 (de) * 1975-07-31 1977-02-03 Murata Manufacturing Co Dielektrische keramische massen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3639132A (en) * 1970-04-13 1972-02-01 Bell Telephone Labor Inc Titanium dioxide ceramic composition and hot-pressing method for producing same
US4102696A (en) * 1975-07-31 1978-07-25 Murata Manufacturing Co., Ltd. Dielectric ceramic composition for high frequencies
JPS5456016U (de) * 1977-09-28 1979-04-18
JPS58136625U (ja) * 1982-03-09 1983-09-14 ヤンマーディーゼル株式会社 Ｖ列機関の給排気装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1418388A (fr) * 1963-11-30 1965-11-19 Rosenthal Isolatoren Gmbh Diélectrique céramique
DE2264260A1 (de) * 1972-01-04 1973-07-12 Gen Electric Co Ltd Dielektrischer werkstoff und verwendung des werkstoffs als bauelement in einem mikrowellengeraet
DE2634146A1 (de) * 1975-07-31 1977-02-03 Murata Manufacturing Co Dielektrische keramikmassen
DE2634145A1 (de) * 1975-07-31 1977-02-03 Murata Manufacturing Co Dielektrische keramische massen

Also Published As

Publication number Publication date
FR2477137B1 (de) 1984-08-24
US4339543A (en) 1982-07-13
ATE6628T1 (de) 1984-03-15
JPH0235406B2 (de) 1990-08-10
CA1150045A (en) 1983-07-19
DE3067074D1 (en) 1984-04-19
JPS56136407A (en) 1981-10-24
EP0035082A1 (de) 1981-09-09
FR2477137A1 (fr) 1981-09-04

Similar Documents

Publication Publication Date Title
EP0035082B1 (de) Temperaturbeständiges dielektrisches Material für sehr hohe Frequenzen und Verfahren zu seiner Herstellung
US9249058B2 (en) High-strength transparent zirconia sintered body, process for producing the same, and uses thereof
JP5351147B2 (ja) 立方構造を有する焼結製品
US4285732A (en) Alumina ceramic
Walrafen et al. Raman spectral characterization of pure and doped fused silica optical fibers
FR2784676A1 (fr) Verres optiques sans plomb
FR2559144A1 (fr) Verres a haute teneur en pbo dans le systeme sio2-pbo-m2o a resistance elevee aux agents chimiques
FR2690436A1 (fr) Verres à très haut indice de réfraction et faible densité.
Drexhage et al. Influence of processing conditions on IR edge absorption in fluorohafnate and fluorozirconate glasses
Singkiburin et al. Effect of antimony (III) oxide on reduction of bubbles from glass melting process
US7090724B2 (en) Langasite single crystal ingot, substrate for piezoelectric device and method for manufacture thereof, and surface acoustic wave device
JPH01172264A (ja) 透光性ジルコニア質焼結体の製造方法
Yamamoto et al. Sc2O3-doped LiNbO3 grown by the float zone method
Lee et al. Raman spectral characterization of existing phases in the ZrO2–Y2O3–Nb2O5 system
Quinn et al. Strength and fractographic analysis of chalcogenide As–S–Se and Ge–As–Se–Te glass fibers
Ritter et al. Dynamic Fatigue Analysis of Indentation Flaws Using an Exponential‐Law Crack Velocity Function
Lipson et al. Multiphonon absorption in infrared glasses based on zirconium and hafnium fluorides
Stević et al. Influence of fluorine on thermal properties of fluorophosphate glasses
KR840002382B1 (ko) 온도-안전성 유전체의 제조방법
AU633445B2 (en) Zirconia ceramics
Chen et al. The effects of hydrated raw materials upon heavy metal fluoride glass quality
EP0078200A1 (de) Keramische Zusammensetzung zum Herstellen von elektrischen Komponenten und Verfahren zur Herstellung dieser Zusammensetzung
Cuevas et al. Study of the optical properties of TeO2-PbO-TiO2 glass system
Djemmah et al. Characterization of high permittivity and low losses TiO2 sintered material for THz applications
FR2478619A1 (fr) Procede de production de verre transparent aux rayons infrarouges et ce verre

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): AT BE CH DE GB IT LI LU NL SE

17P Request for examination filed

Effective date: 19811022

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Designated state(s): AT BE CH DE GB IT LI LU NL SE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 19840314

REF Corresponds to:

Ref document number: 6628

Country of ref document: AT

Date of ref document: 19840315

Kind code of ref document: T

REF Corresponds to:

Ref document number: 3067074

Country of ref document: DE

Date of ref document: 19840419

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: CH

Payment date: 19911111

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 19911121

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19911122

Year of fee payment: 12

Ref country code: DE

Payment date: 19911122

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: LU

Payment date: 19911204

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: BE

Payment date: 19911211

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: AT

Payment date: 19911230

Year of fee payment: 12

ITTA It: last paid annual fee
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 19911231

Year of fee payment: 12

EPTA Lu: last paid annual fee
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19921231

Ref country code: LI

Effective date: 19921231

Ref country code: GB

Effective date: 19921231

Ref country code: CH

Effective date: 19921231

Ref country code: BE

Effective date: 19921231

Ref country code: AT

Effective date: 19921231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Effective date: 19930101

BERE Be: lapsed

Owner name: THOMSON-CSF

Effective date: 19921231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Effective date: 19930701

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee
GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 19921231

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Effective date: 19930901

EUG Se: european patent has lapsed

Ref document number: 80401897.6

Effective date: 19930810