EA201591224A1 - A SEMICONDUCTOR DEVICE WITH PROPERTIES TO PREVENT REVERSE DESIGN - Google Patents

A SEMICONDUCTOR DEVICE WITH PROPERTIES TO PREVENT REVERSE DESIGN

Info

Publication number
EA201591224A1
EA201591224A1 EA201591224A EA201591224A EA201591224A1 EA 201591224 A1 EA201591224 A1 EA 201591224A1 EA 201591224 A EA201591224 A EA 201591224A EA 201591224 A EA201591224 A EA 201591224A EA 201591224 A1 EA201591224 A1 EA 201591224A1
Authority
EA
Eurasian Patent Office
Prior art keywords
properties
semiconductor device
prevent reverse
resistant
disclosed
Prior art date
Application number
EA201591224A
Other languages
Russian (ru)
Inventor
Уилльям Эли Такер
Роберт Фрэнсис Тэнзар
Майкл Клинтон Хоук
Original Assignee
Верисити, Инк.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/739,401 external-priority patent/US20130320491A1/en
Application filed by Верисити, Инк. filed Critical Верисити, Инк.
Publication of EA201591224A1 publication Critical patent/EA201591224A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/57Protection from inspection, reverse engineering or tampering
    • H01L23/573Protection from inspection, reverse engineering or tampering using passive means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Желательно проектировать и производить электронные микросхемы, которые являются устойчивыми к современным способам обратного проектирования. Предлагаются способ и устройство, которое обеспечивает создание микросхем, устойчивых к обратному проектированию, использующему современные способы разрушения слоев. Раскрытое устройство использует электронные компоненты, имеющие одинаковую геометрию, но разные уровни напряжения, для создания различных логических элементов. Альтернативно, раскрытое устройство использует электронные компоненты, имеющие различные геометрии и одинаковые рабочие характеристики. Кроме того, раскрывается способ проектирования микросхемы, использующей такие электронные приборы.It is advisable to design and produce electronic chips that are resistant to modern methods of reverse engineering. A method and a device are proposed that ensure the creation of microcircuits that are resistant to reverse engineering using modern methods of layer destruction. The disclosed device uses electronic components having the same geometry, but different voltage levels, to create different logic elements. Alternatively, the disclosed device uses electronic components having different geometries and the same performance characteristics. In addition, a method for designing a chip using such electronic devices is disclosed.

EA201591224A 2013-01-11 2014-01-03 A SEMICONDUCTOR DEVICE WITH PROPERTIES TO PREVENT REVERSE DESIGN EA201591224A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/739,401 US20130320491A1 (en) 2011-06-07 2013-01-11 Semiconductor Device Having Features to Prevent Reverse Engineering
PCT/US2014/010185 WO2014109961A1 (en) 2013-01-11 2014-01-03 Semiconductor device having features to prevent reverse engineering

Publications (1)

Publication Number Publication Date
EA201591224A1 true EA201591224A1 (en) 2016-02-29

Family

ID=51167305

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201591224A EA201591224A1 (en) 2013-01-11 2014-01-03 A SEMICONDUCTOR DEVICE WITH PROPERTIES TO PREVENT REVERSE DESIGN

Country Status (7)

Country Link
EP (1) EP2943979A4 (en)
CN (1) CN104969345B (en)
AP (1) AP2015008585A0 (en)
CA (1) CA2897082A1 (en)
EA (1) EA201591224A1 (en)
MX (1) MX348002B (en)
WO (1) WO2014109961A1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766516A (en) * 1987-09-24 1988-08-23 Hughes Aircraft Company Method and apparatus for securing integrated circuits from unauthorized copying and use
US4933898A (en) * 1989-01-12 1990-06-12 General Instrument Corporation Secure integrated circuit chip with conductive shield
US5783846A (en) * 1995-09-22 1998-07-21 Hughes Electronics Corporation Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering
US20020096744A1 (en) * 2001-01-24 2002-07-25 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using etched passivation openings in integrated circuits
US7135734B2 (en) * 2001-08-30 2006-11-14 Micron Technology, Inc. Graded composition metal oxide tunnel barrier interpoly insulators
JP2010016164A (en) * 2008-07-03 2010-01-21 Nec Electronics Corp Method for designing semiconductor integrated circuit, manufacturing method, circuit design program, and semiconductor integrated circuit
US20120313664A1 (en) * 2011-06-07 2012-12-13 Static Control Components, Inc. Semiconductor Device Having Features to Prevent Reverse Engineering

Also Published As

Publication number Publication date
CN104969345B (en) 2018-12-07
EP2943979A1 (en) 2015-11-18
EP2943979A4 (en) 2017-05-17
MX2015008948A (en) 2015-09-28
MX348002B (en) 2017-01-05
AP2015008585A0 (en) 2015-07-31
CN104969345A (en) 2015-10-07
CA2897082A1 (en) 2014-07-17
WO2014109961A1 (en) 2014-07-17

Similar Documents

Publication Publication Date Title
GB2514771B (en) Methods of securely changing the root key of a chip, and related electronic devices and chips
SG10202101505UA (en) Electronic power devices integrated with an engineered substrate
BR112015016665A2 (en) semiconductor device that has features to prevent reverse engineering
DE112017003450A5 (en) Radiation-emitting semiconductor chip
MY174370A (en) Integrated circuit manufacture using direct write lithography
DE112014001516T8 (en) Contact component and semiconductor module
JP2016027652A5 (en) Semiconductor device and electronic device
ITUB20161081A1 (en) SEMICONDUCTOR DEVICE WITH BURIED CONDUCTIVE REGION, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
BR112016001171A2 (en) semiconductor module.
EA201700136A1 (en) POLYMER COMPOSITION FOR LAYER ELEMENT LAYER
EA201590755A1 (en) A SEMICONDUCTOR DEVICE WITH PROPERTIES TO PREVENT REVERSE DESIGN
EP3832710C0 (en) Non-planar i/o and logic semiconductor devices having different workfunction on common substrate
IT201700087309A1 (en) INTEGRATED ELECTRONIC DEVICE WITH REDISTRIBUTION AND HIGH RESISTANCE TO MECHANICAL STRESS
DE112014003169T8 (en) Insulation structure in gallium nitride components and integrated circuits
DE102013104840A8 (en) Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor components
JP2015188201A5 (en)
DE112018000553A5 (en) Optoelectronic semiconductor chip
DE112014005323A5 (en) Optoelectronic semiconductor chip with integrated ESD protection
DE102013105631A8 (en) Support for an optoelectronic semiconductor chip and optoelectronic component
DE112014003593A5 (en) Optoelectronic semiconductor chip and arrangement with at least one such optoelectronic semiconductor chip
DE112014003318A5 (en) Optoelectronic semiconductor chip
DE112014000439A5 (en) Optoelectronic semiconductor chip
MX2017007254A (en) Simple to produce electric component and method for producing an electric component.
DE112018003308A5 (en) OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND ARRANGEMENT WITH AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
DE112017004053A5 (en) Optoelectronic semiconductor chip