EA200401154A1 - Способ изготовления блока солнечного элемента с использованием временной подложки - Google Patents

Способ изготовления блока солнечного элемента с использованием временной подложки

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Publication number
EA200401154A1
EA200401154A1 EA200401154A EA200401154A EA200401154A1 EA 200401154 A1 EA200401154 A1 EA 200401154A1 EA 200401154 A EA200401154 A EA 200401154A EA 200401154 A EA200401154 A EA 200401154A EA 200401154 A1 EA200401154 A1 EA 200401154A1
Authority
EA
Eurasian Patent Office
Prior art keywords
temporary substrate
applying
layer
current collection
etch resist
Prior art date
Application number
EA200401154A
Other languages
English (en)
Other versions
EA006755B1 (ru
Inventor
Эрик Мидделман
Паулус Маринус Гезина Мария Петерс
Рудольф Эммануэль Изидор Схропп
Original Assignee
Акцо Нобель Н. В.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Акцо Нобель Н. В. filed Critical Акцо Нобель Н. В.
Publication of EA200401154A1 publication Critical patent/EA200401154A1/ru
Publication of EA006755B1 publication Critical patent/EA006755B1/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Настоящее изобретение относится к способу изготовления блока солнечного элемента, включающего в себя этапы, на которых (a) обеспечивают наличие поддающейся травлению проводящей временной подложки; (b) наносят на временную подложку слой прозрачного проводящего оксида (ППО); (c) наносят фотоэлектрический слой на слой ППО; (d) наносят слой заднего электрода; (e) наносят постоянный несущий элемент; (f) на любом из предыдущих этапов обеспечивают наличие «резиста травления» на временной подложке в виде рисунка, подходящей для формирования токосъемной сетки после удаления той части временной подложки, которая не покрыта резистом травления; (g) выборочно удаляют временную подложку там, где она не покрыта резистом травления. Способ согласно настоящему изобретению делает возможным получение блока солнечного элемента, содержащего токосъемную сетку с высокой проводимостью, посредством простого процесса. Если это необходимо, токосъемная сетка может быть снабжена цветным слоем.Отчет о международном поиске был опубликован 2003.12.24.
EA200401154A 2002-03-05 2003-03-03 Способ изготовления блока солнечного элемента с использованием временной подложки EA006755B1 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP02075893 2002-03-05
US36584102P 2002-03-20 2002-03-20
PCT/EP2003/002218 WO2003075351A2 (en) 2002-03-05 2003-03-03 Process for manufacturing a solar cell unit using a temporary substrate

Publications (2)

Publication Number Publication Date
EA200401154A1 true EA200401154A1 (ru) 2005-06-30
EA006755B1 EA006755B1 (ru) 2006-04-28

Family

ID=35986291

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200401154A EA006755B1 (ru) 2002-03-05 2003-03-03 Способ изготовления блока солнечного элемента с использованием временной подложки

Country Status (14)

Country Link
EP (1) EP1481427B1 (ru)
JP (1) JP4368685B2 (ru)
KR (1) KR100981538B1 (ru)
CN (1) CN100487925C (ru)
AT (1) ATE438930T1 (ru)
AU (1) AU2003208696B2 (ru)
BR (1) BRPI0308218A2 (ru)
CA (1) CA2478109A1 (ru)
EA (1) EA006755B1 (ru)
ES (1) ES2344004T3 (ru)
MX (1) MXPA04008557A (ru)
PT (1) PT1481427E (ru)
SI (1) SI1481427T1 (ru)
WO (1) WO2003075351A2 (ru)

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DE102004050158B3 (de) 2004-10-15 2006-04-06 Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg Transparente Scheibe mit einer beheizbaren Beschichtung
EP1819508A1 (en) 2004-11-19 2007-08-22 Akzo Nobel N.V. Method for preparing flexible mechanically compensated transparent layered material
DE102006002636B4 (de) * 2006-01-19 2009-10-22 Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg Tansparente Scheibe mit einem beheizbaren Schichtsystem
GB0615651D0 (en) * 2006-08-07 2006-09-13 Sun Chemical Bv A process for manufacturing solar cells
EP2093804A1 (en) 2008-02-19 2009-08-26 Helianthos B.V. Solar cell system with encapsulant
DE102008018147A1 (de) 2008-04-10 2009-10-15 Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg Transparente Scheibe mit einer beheizbaren Beschichtung und niederohmigen leitenden Strukturen
JP5007907B2 (ja) * 2008-05-09 2012-08-22 株式会社豊田中央研究所 エッチング液及び半導体素子の製造方法
DE102008033617A1 (de) 2008-07-17 2010-01-21 Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg Transparente Scheibe mit einer beheizbaren Beschichtung und niederohmigen leitenden Strukturen
FR2939239B1 (fr) * 2008-12-03 2010-12-31 Ecole Polytech Module photovoltaique comprenant une electrode transparente conductrice d'epaisseur variable et procedes de fabrication d'un tel module
KR101206250B1 (ko) 2009-10-13 2012-11-28 주식회사 엘지화학 식각 마스크 패턴 형성용 페이스트 및 이의 스크린 인쇄법을 이용한 실리콘 태양전지의 제조방법
RU2477905C1 (ru) * 2011-09-15 2013-03-20 Виктор Анатольевич Капитанов Тонкопленочный кремниевый фотоэлектрический преобразователь
TW201417319A (zh) 2012-08-24 2014-05-01 Ind Tech Res Inst 矽晶太陽能電池及其矽晶太陽能電池模組
JP6048047B2 (ja) * 2012-10-02 2016-12-21 凸版印刷株式会社 色素増感太陽電池および色素増感太陽電池用光電極
US9502596B2 (en) * 2013-06-28 2016-11-22 Sunpower Corporation Patterned thin foil
TWI599056B (zh) 2015-12-28 2017-09-11 財團法人工業技術研究院 太陽能電池
CN111247642B (zh) * 2017-09-15 2023-09-22 出光兴产株式会社 光电变换模块以及制造光电变换模块的方法
TWI759773B (zh) * 2020-06-20 2022-04-01 國立臺灣大學 太陽能電池封裝方法與封裝結構

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4262411A (en) * 1977-09-08 1981-04-21 Photon Power, Inc. Method of making a solar cell array
US4507181A (en) * 1984-02-17 1985-03-26 Energy Conversion Devices, Inc. Method of electro-coating a semiconductor device
US4771017A (en) * 1987-06-23 1988-09-13 Spire Corporation Patterning process
CA2267076C (en) * 1996-09-26 2005-01-25 Akzo Nobel Nv Method of manufacturing a photovoltaic foil
NL1013900C2 (nl) * 1999-12-21 2001-06-25 Akzo Nobel Nv Werkwijze voor de vervaardiging van een zonnecelfolie met in serie geschakelde zonnecellen.

Also Published As

Publication number Publication date
JP2005519473A (ja) 2005-06-30
AU2003208696B2 (en) 2009-03-26
PT1481427E (pt) 2009-10-19
CN1639880A (zh) 2005-07-13
KR20040104482A (ko) 2004-12-10
EA006755B1 (ru) 2006-04-28
MXPA04008557A (es) 2004-12-06
ES2344004T3 (es) 2010-08-16
AU2003208696A1 (en) 2003-09-16
SI1481427T1 (sl) 2009-12-31
JP4368685B2 (ja) 2009-11-18
CN100487925C (zh) 2009-05-13
WO2003075351A2 (en) 2003-09-12
WO2003075351A3 (en) 2003-12-24
ATE438930T1 (de) 2009-08-15
CA2478109A1 (en) 2003-09-12
KR100981538B1 (ko) 2010-09-10
EP1481427A2 (en) 2004-12-01
EP1481427B1 (en) 2009-08-05
BRPI0308218A2 (pt) 2016-06-21

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Designated state(s): AM AZ BY KZ KG MD TJ TM

MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): RU