DK606986D0 - Fremgangsmaade og apparat til vaekst af enkeltkrystallegemer - Google Patents

Fremgangsmaade og apparat til vaekst af enkeltkrystallegemer

Info

Publication number
DK606986D0
DK606986D0 DK606986A DK606986A DK606986D0 DK 606986 D0 DK606986 D0 DK 606986D0 DK 606986 A DK606986 A DK 606986A DK 606986 A DK606986 A DK 606986A DK 606986 D0 DK606986 D0 DK 606986D0
Authority
DK
Denmark
Prior art keywords
growth
single crystal
crystal bodies
bodies
crystal
Prior art date
Application number
DK606986A
Other languages
English (en)
Other versions
DK606986A (da
Inventor
David N Jewett
Original Assignee
Energy Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Materials Corp filed Critical Energy Materials Corp
Publication of DK606986D0 publication Critical patent/DK606986D0/da
Publication of DK606986A publication Critical patent/DK606986A/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
DK606986A 1985-04-16 1986-12-16 Fremgangsmaade og apparat til vaekst af enkeltkrystallegemer DK606986A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1985/000697 WO1986006109A1 (en) 1985-04-16 1985-04-16 Method and apparatus for growing single crystal bodies

Publications (2)

Publication Number Publication Date
DK606986D0 true DK606986D0 (da) 1986-12-16
DK606986A DK606986A (da) 1986-12-16

Family

ID=22188650

Family Applications (1)

Application Number Title Priority Date Filing Date
DK606986A DK606986A (da) 1985-04-16 1986-12-16 Fremgangsmaade og apparat til vaekst af enkeltkrystallegemer

Country Status (4)

Country Link
EP (1) EP0221051A1 (da)
DK (1) DK606986A (da)
FI (1) FI865130A0 (da)
WO (1) WO1986006109A1 (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3737051A1 (de) * 1987-10-31 1989-05-11 Leybold Ag Vorrichtung fuer die kontinuierliche zufuhr von schmelzgut
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
US7955433B2 (en) * 2007-07-26 2011-06-07 Calisolar, Inc. Method and system for forming a silicon ingot using a low-grade silicon feedstock
DE102009021003A1 (de) * 2009-05-12 2010-11-18 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zur Bereitstellung flüssigen Siliziums
CN110129879A (zh) * 2019-06-26 2019-08-16 深圳市全普科技有限公司 一种双副室单晶硅筒生长炉及单晶硅生长方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2727839A (en) * 1950-06-15 1955-12-20 Bell Telephone Labor Inc Method of producing semiconductive bodies
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
FR1473984A (fr) * 1966-01-10 1967-03-24 Radiotechnique Coprim Rtc Procédé et dispositif destinés à la fabrication de composés binaires monocristallins
US3505025A (en) * 1967-03-10 1970-04-07 Ibm Jacketed,cooled crucible for crystallizing material
US3582287A (en) * 1968-01-09 1971-06-01 Emil R Capita Seed pulling apparatus having diagonal feed and gas doping
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
US4225378A (en) * 1978-12-27 1980-09-30 Burroughs Corporation Extrusion mold and method for growing monocrystalline structures
US4330359A (en) * 1981-02-10 1982-05-18 Lovelace Alan M Administrator Electromigration process for the purification of molten silicon during crystal growth
US4410494A (en) * 1981-04-13 1983-10-18 Siltec Corporation Apparatus for controlling flow of molten material between crystal growth furnaces and a replenishment crucible
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge

Also Published As

Publication number Publication date
FI865130A (fi) 1986-12-16
WO1986006109A1 (en) 1986-10-23
EP0221051A1 (en) 1987-05-13
FI865130A0 (fi) 1986-12-16
DK606986A (da) 1986-12-16

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Legal Events

Date Code Title Description
AHB Application shelved due to non-payment