DK606986D0 - METHOD AND APPARATUS FOR GROWTH OF SINGLE CRYSTAL BODIES - Google Patents

METHOD AND APPARATUS FOR GROWTH OF SINGLE CRYSTAL BODIES

Info

Publication number
DK606986D0
DK606986D0 DK606986A DK606986A DK606986D0 DK 606986 D0 DK606986 D0 DK 606986D0 DK 606986 A DK606986 A DK 606986A DK 606986 A DK606986 A DK 606986A DK 606986 D0 DK606986 D0 DK 606986D0
Authority
DK
Denmark
Prior art keywords
growth
single crystal
crystal bodies
bodies
crystal
Prior art date
Application number
DK606986A
Other languages
Danish (da)
Other versions
DK606986A (en
Inventor
David N Jewett
Original Assignee
Energy Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Materials Corp filed Critical Energy Materials Corp
Publication of DK606986A publication Critical patent/DK606986A/en
Publication of DK606986D0 publication Critical patent/DK606986D0/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
DK606986A 1985-04-16 1986-12-16 METHOD AND APPARATUS FOR GROWTH OF SINGLE CRYSTAL BODIES DK606986D0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1985/000697 WO1986006109A1 (en) 1985-04-16 1985-04-16 Method and apparatus for growing single crystal bodies

Publications (2)

Publication Number Publication Date
DK606986A DK606986A (en) 1986-12-16
DK606986D0 true DK606986D0 (en) 1986-12-16

Family

ID=22188650

Family Applications (1)

Application Number Title Priority Date Filing Date
DK606986A DK606986D0 (en) 1985-04-16 1986-12-16 METHOD AND APPARATUS FOR GROWTH OF SINGLE CRYSTAL BODIES

Country Status (4)

Country Link
EP (1) EP0221051A1 (en)
DK (1) DK606986D0 (en)
FI (1) FI865130A0 (en)
WO (1) WO1986006109A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3737051A1 (en) * 1987-10-31 1989-05-11 Leybold Ag DEVICE FOR THE CONTINUOUS FEED OF MELT
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
US7955433B2 (en) * 2007-07-26 2011-06-07 Calisolar, Inc. Method and system for forming a silicon ingot using a low-grade silicon feedstock
DE102009021003A1 (en) * 2009-05-12 2010-11-18 Centrotherm Sitec Gmbh Process and apparatus for providing liquid silicon
CN110129879A (en) * 2019-06-26 2019-08-16 深圳市全普科技有限公司 A kind of two-pack chamber single-crystal si cylinder growth furnace and monocrystalline silicon growing method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2727839A (en) * 1950-06-15 1955-12-20 Bell Telephone Labor Inc Method of producing semiconductive bodies
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
FR1473984A (en) * 1966-01-10 1967-03-24 Radiotechnique Coprim Rtc Method and device for the production of monocrystalline binary compounds
US3505025A (en) * 1967-03-10 1970-04-07 Ibm Jacketed,cooled crucible for crystallizing material
US3582287A (en) * 1968-01-09 1971-06-01 Emil R Capita Seed pulling apparatus having diagonal feed and gas doping
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
DE2821481C2 (en) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Device for pulling high-purity semiconductor rods from the melt
US4225378A (en) * 1978-12-27 1980-09-30 Burroughs Corporation Extrusion mold and method for growing monocrystalline structures
US4330359A (en) * 1981-02-10 1982-05-18 Lovelace Alan M Administrator Electromigration process for the purification of molten silicon during crystal growth
US4410494A (en) * 1981-04-13 1983-10-18 Siltec Corporation Apparatus for controlling flow of molten material between crystal growth furnaces and a replenishment crucible
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge

Also Published As

Publication number Publication date
DK606986A (en) 1986-12-16
WO1986006109A1 (en) 1986-10-23
EP0221051A1 (en) 1987-05-13
FI865130A (en) 1986-12-16
FI865130A0 (en) 1986-12-16

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Legal Events

Date Code Title Description
AHB Application shelved due to non-payment