DK538283D0 - Styrekredsloeb for et foelsomt halvlederorgan af tyristor- eller triactypen med selvindkoblingshjaelpeimpedans - Google Patents

Styrekredsloeb for et foelsomt halvlederorgan af tyristor- eller triactypen med selvindkoblingshjaelpeimpedans

Info

Publication number
DK538283D0
DK538283D0 DK5382/83A DK538283A DK538283D0 DK 538283 D0 DK538283 D0 DK 538283D0 DK 5382/83 A DK5382/83 A DK 5382/83A DK 538283 A DK538283 A DK 538283A DK 538283 D0 DK538283 D0 DK 538283D0
Authority
DK
Denmark
Prior art keywords
tyristor
organization
control circuit
sensitive semiconductor
triac type
Prior art date
Application number
DK5382/83A
Other languages
English (en)
Other versions
DK538283A (da
Inventor
Jacques Emile Thire
Georges Souques
Original Assignee
Telemecanique Electrique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR8219729A external-priority patent/FR2536920A1/fr
Priority claimed from FR8303306A external-priority patent/FR2542148B1/fr
Application filed by Telemecanique Electrique filed Critical Telemecanique Electrique
Publication of DK538283D0 publication Critical patent/DK538283D0/da
Publication of DK538283A publication Critical patent/DK538283A/da

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
DK538283A 1982-11-25 1983-11-24 Styrekredsloeb for et foelsomt halvlederorgan af tyristor- eller triactypen med selvindkoblingshjaelpeimpedans DK538283A (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8219729A FR2536920A1 (fr) 1982-11-25 1982-11-25 Circuit de commande d'un dispositif a semi-conducteur auto-allumable et blocable, ou commandable en puissance, par l'etablissement d'un court-circuit entre deux regions du semi-conducteur
FR8303306A FR2542148B1 (fr) 1983-03-01 1983-03-01 Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible

Publications (2)

Publication Number Publication Date
DK538283D0 true DK538283D0 (da) 1983-11-24
DK538283A DK538283A (da) 1984-05-26

Family

ID=26223158

Family Applications (1)

Application Number Title Priority Date Filing Date
DK538283A DK538283A (da) 1982-11-25 1983-11-24 Styrekredsloeb for et foelsomt halvlederorgan af tyristor- eller triactypen med selvindkoblingshjaelpeimpedans

Country Status (5)

Country Link
EP (1) EP0110776A1 (da)
KR (1) KR840006894A (da)
BR (1) BR8306491A (da)
DK (1) DK538283A (da)
ES (1) ES527572A0 (da)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2579007B1 (fr) * 1985-03-12 1988-09-09 Telemecanique Electrique Interrupteur hybride
JPH02272612A (ja) * 1989-04-14 1990-11-07 Toshiba Corp 静止形無効電力補償装置のゲートパルス発生方法
US5027020A (en) * 1989-10-10 1991-06-25 Teledyne Industries, Inc. Zero voltage switching AC relay circuit
EP1811639A1 (en) 2006-01-23 2007-07-25 Thomson Licensing S.A. Overpower-protection circuit and power supply apparatus having the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663838A (en) * 1970-10-16 1972-05-16 Eberhart Reimers Optically triggered thyristor
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch

Also Published As

Publication number Publication date
DK538283A (da) 1984-05-26
ES8406816A1 (es) 1984-08-01
BR8306491A (pt) 1984-06-26
ES527572A0 (es) 1984-08-01
EP0110776A1 (fr) 1984-06-13
KR840006894A (ko) 1984-12-03

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Legal Events

Date Code Title Description
AHB Application shelved due to non-payment