DK538283D0 - Styrekredsloeb for et foelsomt halvlederorgan af tyristor- eller triactypen med selvindkoblingshjaelpeimpedans - Google Patents
Styrekredsloeb for et foelsomt halvlederorgan af tyristor- eller triactypen med selvindkoblingshjaelpeimpedansInfo
- Publication number
- DK538283D0 DK538283D0 DK5382/83A DK538283A DK538283D0 DK 538283 D0 DK538283 D0 DK 538283D0 DK 5382/83 A DK5382/83 A DK 5382/83A DK 538283 A DK538283 A DK 538283A DK 538283 D0 DK538283 D0 DK 538283D0
- Authority
- DK
- Denmark
- Prior art keywords
- tyristor
- organization
- control circuit
- sensitive semiconductor
- triac type
- Prior art date
Links
- 230000008520 organization Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8219729A FR2536920A1 (fr) | 1982-11-25 | 1982-11-25 | Circuit de commande d'un dispositif a semi-conducteur auto-allumable et blocable, ou commandable en puissance, par l'etablissement d'un court-circuit entre deux regions du semi-conducteur |
FR8303306A FR2542148B1 (fr) | 1983-03-01 | 1983-03-01 | Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible |
Publications (2)
Publication Number | Publication Date |
---|---|
DK538283D0 true DK538283D0 (da) | 1983-11-24 |
DK538283A DK538283A (da) | 1984-05-26 |
Family
ID=26223158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK538283A DK538283A (da) | 1982-11-25 | 1983-11-24 | Styrekredsloeb for et foelsomt halvlederorgan af tyristor- eller triactypen med selvindkoblingshjaelpeimpedans |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0110776A1 (da) |
KR (1) | KR840006894A (da) |
BR (1) | BR8306491A (da) |
DK (1) | DK538283A (da) |
ES (1) | ES527572A0 (da) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2579007B1 (fr) * | 1985-03-12 | 1988-09-09 | Telemecanique Electrique | Interrupteur hybride |
JPH02272612A (ja) * | 1989-04-14 | 1990-11-07 | Toshiba Corp | 静止形無効電力補償装置のゲートパルス発生方法 |
US5027020A (en) * | 1989-10-10 | 1991-06-25 | Teledyne Industries, Inc. | Zero voltage switching AC relay circuit |
EP1811639A1 (en) | 2006-01-23 | 2007-07-25 | Thomson Licensing S.A. | Overpower-protection circuit and power supply apparatus having the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663838A (en) * | 1970-10-16 | 1972-05-16 | Eberhart Reimers | Optically triggered thyristor |
JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
-
1983
- 1983-11-23 EP EP83402258A patent/EP0110776A1/fr not_active Withdrawn
- 1983-11-24 DK DK538283A patent/DK538283A/da not_active Application Discontinuation
- 1983-11-24 KR KR1019830005560A patent/KR840006894A/ko not_active Application Discontinuation
- 1983-11-25 BR BR8306491A patent/BR8306491A/pt unknown
- 1983-11-25 ES ES527572A patent/ES527572A0/es active Granted
Also Published As
Publication number | Publication date |
---|---|
DK538283A (da) | 1984-05-26 |
ES8406816A1 (es) | 1984-08-01 |
BR8306491A (pt) | 1984-06-26 |
ES527572A0 (es) | 1984-08-01 |
EP0110776A1 (fr) | 1984-06-13 |
KR840006894A (ko) | 1984-12-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AHB | Application shelved due to non-payment |