DK3341980T3 - Lag og fremgangsmåde til fremstilling heraf - Google Patents

Lag og fremgangsmåde til fremstilling heraf Download PDF

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Publication number
DK3341980T3
DK3341980T3 DK16765934.1T DK16765934T DK3341980T3 DK 3341980 T3 DK3341980 T3 DK 3341980T3 DK 16765934 T DK16765934 T DK 16765934T DK 3341980 T3 DK3341980 T3 DK 3341980T3
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DK
Denmark
Prior art keywords
layers
manufacture
Prior art date
Application number
DK16765934.1T
Other languages
English (en)
Inventor
Tobias Schmidt
HANS-JüRGEN SCHREINER
Tanja Einhellinger-Müller
Ralf Moos
Michael Schubert
Original Assignee
Ceram Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ceram Gmbh filed Critical Ceram Gmbh
Application granted granted Critical
Publication of DK3341980T3 publication Critical patent/DK3341980T3/da

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/02Coating starting from inorganic powder by application of pressure only
    • C23C24/04Impact or kinetic deposition of particles
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00Compounds of zirconium
    • C01G25/006Compounds containing, besides zirconium, two or more other elements, with the exception of oxygen or hydrogen
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/704Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • H10N30/8548Lead-based oxides
    • H10N30/8554Lead-zirconium titanate [PZT] based
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/40Electric properties
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/04Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/42Piezoelectric device making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
DK16765934.1T 2015-08-26 2016-08-26 Lag og fremgangsmåde til fremstilling heraf DK3341980T3 (da)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102015216312 2015-08-26
DE102015221576 2015-11-04
DE102016200038 2016-01-05
PCT/EP2016/070162 WO2017036945A1 (de) 2015-08-26 2016-08-26 Schicht und verfahren zu seiner herstellung

Publications (1)

Publication Number Publication Date
DK3341980T3 true DK3341980T3 (da) 2022-08-22

Family

ID=58011506

Family Applications (1)

Application Number Title Priority Date Filing Date
DK16765934.1T DK3341980T3 (da) 2015-08-26 2016-08-26 Lag og fremgangsmåde til fremstilling heraf

Country Status (7)

Country Link
US (1) US20180248108A1 (da)
EP (1) EP3341980B1 (da)
JP (1) JP2018525842A (da)
CN (1) CN107924991A (da)
DE (1) DE102016216064A1 (da)
DK (1) DK3341980T3 (da)
WO (1) WO2017036945A1 (da)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024248A (ja) * 1999-07-07 2001-01-26 Samsung Electro Mech Co Ltd 低温焼成法による多層圧電/電歪セラミックアクチュエータの製造方法及びその方法によって製造された多層圧電/電歪セラミックアクチュエータ
JP2005279953A (ja) * 2004-03-26 2005-10-13 Fuji Photo Film Co Ltd セラミックス構造物及びセラミックス構造物の製造方法
EP1583163B1 (en) * 2004-03-30 2012-02-15 Brother Kogyo Kabushiki Kaisha Method for manufacturing film or piezoelectric film
JP2006326523A (ja) * 2005-05-27 2006-12-07 Canon Inc 成膜方法、該成膜方法により形成された圧電膜、および該圧電膜を備えた圧電素子、ならびに該圧電素子を用いたインクジェット装置
EP1757714A3 (en) * 2005-08-24 2008-07-23 Brother Kogyo Kabushiki Kaisha Method of producing film and method of producing ink-jet head
JP5063892B2 (ja) * 2005-12-20 2012-10-31 富士フイルム株式会社 液体吐出ヘッドの製造方法
JP5188076B2 (ja) * 2006-04-03 2013-04-24 キヤノン株式会社 圧電素子及びその製造方法、電子デバイス、インクジェット装置
JP5006354B2 (ja) * 2009-01-29 2012-08-22 日本碍子株式会社 圧電/電歪共振子
JP2010189741A (ja) * 2009-02-20 2010-09-02 Fdk Corp エアロゾル・デポジション法を用いた圧電セラミック膜の製膜方法、および圧電セラミック材料
JP2010232580A (ja) * 2009-03-30 2010-10-14 Brother Ind Ltd 圧電素子
JP2011195934A (ja) * 2010-03-23 2011-10-06 Tdk Corp エアロゾルデポジション用圧電セラミックス粉末及び圧電素子、並びに成膜方法
JP5196087B2 (ja) * 2011-02-03 2013-05-15 パナソニック株式会社 圧電体薄膜とその製造方法、インクジェットヘッド、インクジェットヘッドを用いて画像を形成する方法、角速度センサ、角速度センサを用いて角速度を測定する方法、圧電発電素子ならびに圧電発電素子を用いた発電方法

Also Published As

Publication number Publication date
JP2018525842A (ja) 2018-09-06
US20180248108A1 (en) 2018-08-30
EP3341980B1 (de) 2022-07-20
EP3341980A1 (de) 2018-07-04
DE102016216064A1 (de) 2017-03-02
CN107924991A (zh) 2018-04-17
WO2017036945A1 (de) 2017-03-09

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