DK2948757T3 - Kemisk detektionsindretning - Google Patents
Kemisk detektionsindretning Download PDFInfo
- Publication number
- DK2948757T3 DK2948757T3 DK13872987.6T DK13872987T DK2948757T3 DK 2948757 T3 DK2948757 T3 DK 2948757T3 DK 13872987 T DK13872987 T DK 13872987T DK 2948757 T3 DK2948757 T3 DK 2948757T3
- Authority
- DK
- Denmark
- Prior art keywords
- metal
- nanostructures
- functional group
- detection device
- coating
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N21/552—Attenuated total reflection
- G01N21/553—Attenuated total reflection and using surface plasmons
- G01N21/554—Attenuated total reflection and using surface plasmons detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N2021/651—Cuvettes therefore
Claims (10)
1. Kemisk detektionsindretning (100; 200; 300), som omfatter: et substrat (102); en flerhed af aflange nanostrukturer (104), hvor hver af de aflange nanostrukturer (104) har en fastgørelsesende og en fri ende modsat fastgørelsesenden, idet fastgørelsesenden er fastgjort til substratet (102), og den frie ende omfatter et metal; hvor hver af de aflange nanostrukturer (104) er en struktur, som har et dimensionsforhold med en længde, der er mindst dobbelt så lang som den korteste bredde; hvor de aflange nanostrukturer (104) er bøjelige og arrangeret således, at de er i stand til at bøje sig og indfange molekyler; hvor metallet er en metalbelægning eller metalhætte (108) på den frie ende; og hvor de aflange nanostrukturer (104) omfatter nanokegler, nanopyramider, nanostave, nanostænger, nanofingre, nanopæle eller nanogræs; og hvor udtrykket nanostruktur henviser til en hvilken som helst struktur, hvis bredde eller diameter har en størrelse på mindre end 1 mikrometer, kendetegnet ved, at hver af de aflange nanostrukturer (104) er belagt med en forsætligt påført metaloxidbelægning (110), hvilken metaloxidbelægning (110) har en tykkelse i intervallet fra 1 nm til 200 nm.
2. Kemisk detektionsindretning (200; 300) ifølge krav 1, som yderligere omfatter en funktionel gruppe (112), der er bundet til belægningen ved kovalent binding; og hvor den funktionelle gruppe (112) omfatter en fastgørelsesfunktionel gruppe A, en afstandsgruppe B og en målfunktionel gruppe FG ifølge formlen I:
hvor A er en organisk funktionel gruppe, som er bundet til nanostrukturen (104), B er substitueret eller usubstitueret, lineær eller forgrenet alkyl eller aryl, og FG er en organisk funktionel gruppe, der er i stand til at adsorbere et målmolekyle.
3. Kemisk detektionsindretning (200; 300) ifølge krav 2, hvor den funktionelle gruppe (112) er formuleret til at binde sig selektivt til en metalion, en organisk forbindelse eller en hydrogenion.
4. Kemisk detektionsindretning (100; 200; 300) ifølge krav 1, hvor metaloxidet er valgt fra gruppen bestående af siliciumoxid, titanoxid, zinkoxid, aluminiumoxid, galliumoxid, indiumoxid, zirconiumoxid, hafniumoxid, tantaloxid og blandinger deraf.
5. Kemisk detektionsindretning (100; 200; 300) ifølge krav 1, hvor metallet er valgt fra gruppen bestående af guld, sølv, kobber, aluminium, platin og blandinger deraf.
6. Kemisk detektionsindretning (300) ifølge krav 1, som yderligere omfatter en detektor (118), der er operativt koblet til flerheden af aflange nanostrukturer (104), hvor detektoren (118) er valgt fra gruppen bestående af et kolorimeter, et reflektometer, et spektrometer, et spektrofotometer, et Raman-spektrometer, et lysmikroskop og et instrument til at måle luminescens.
7. Kemisk detektionsindretning (300) ifølge krav 1, hvor flerheden af aflange nanostrukturer (104) udgør et array (114).
8. Kemisk detektionsindretning (300) ifølge krav 7, hvorarrayet indbefatter underarrays (116), hvilke underarrays (116) har individuel selektivitet for et målmolekyle, hvilket målmolekyle er individuelt valgt fra gruppen bestående af en metalion, en organisk forbindelse og en hydrogenion.
9. Fremgangsmåde til fremstilling af en kemisk detektionsindretning (100; 200; 300) ifølge det foreliggende krav 1, hvilken fremgangsmåde omfatter: at anbringe en flerhed af aflange nanostrukturer (104) på et substrat (102) således, at hver af de aflange nanostrukturer (104) har en fastgørelsesende fastgjort til substratet (102) og en fri ende modsat fastgørelsesenden; at afsætte et metal på den frie ende af hver af de aflange nanostrukturer (104); og belægge hver af de aflange nanostrukturer (104) med en forsætligt påført metaloxidbelægning (110); hvor hver af de aflange nanostrukturer (104) er en struktur, som har et dimensionsforhold med en længde, der er mindst dobbelt så lang som den korteste bredde; hvor de aflange nanostrukturer (104) er bøjelige, og hvor de bøjelige nanostrukturer er arrangeret således, at de er i stand til at bøje sig og indfange molekyler; hvor metallet er en metalbelægning eller metalhætte (108) på den frie ende; og hvor metaloxidbelægningen (110) har en tykkelse i intervallet fra 1 nm til 200 nm, hvor de aflange nanostrukturer (104) er valgt blandt nanokegler, nanopyramider, nanostave, nanostænger, nanofingre, nanopæle og nanogræs; og hvor udtrykket nanostruktur henviser til en hvilken som helst struktur, hvis bredde eller diameter har en størrelse på mindre end 1 mikrometer.
10. Fremgangsmåde ifølge krav 9, som yderligere omfatter trinet til at fastgøre en funktionel gruppe (112) til metaloxidbelægningen (110) på den frie ende af nanostrukturen (104).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2013/023266 WO2014116238A1 (en) | 2013-01-25 | 2013-01-25 | Chemical sensing device |
Publications (1)
Publication Number | Publication Date |
---|---|
DK2948757T3 true DK2948757T3 (da) | 2017-06-06 |
Family
ID=51227910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK13872987.6T DK2948757T3 (da) | 2013-01-25 | 2013-01-25 | Kemisk detektionsindretning |
Country Status (6)
Country | Link |
---|---|
US (1) | US9567214B2 (da) |
EP (2) | EP2948757B1 (da) |
JP (1) | JP5969711B2 (da) |
CN (2) | CN104937391A (da) |
DK (1) | DK2948757T3 (da) |
WO (1) | WO2014116238A1 (da) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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TW201725385A (zh) * | 2016-01-05 | 2017-07-16 | 財團法人工業技術研究院 | 具有薄層層析之拉曼檢測晶片及分離檢測分析物之方法 |
CN108496071A (zh) * | 2016-04-19 | 2018-09-04 | 惠普发展公司,有限责任合伙企业 | 包括牺牲钝化涂层的等离子体纳米结构体 |
EP3374757B1 (en) * | 2016-04-21 | 2021-09-01 | Hewlett-Packard Development Company, L.P. | Sels nano finger sidewall coating layer |
US10871449B2 (en) | 2016-04-22 | 2020-12-22 | Hewlett-Packard Development Company, L.P. | SERS sensor apparatus with passivation film |
WO2017200295A1 (ko) * | 2016-05-17 | 2017-11-23 | 충남대학교산학협력단 | 표면증강 라만산란 기판, 이를 포함하는 분자 검출용 소자 및 이의 제조방법 |
US10444155B2 (en) * | 2016-10-10 | 2019-10-15 | Hewlett-Packard Development Company, L.P. | Nanostructure with electrowetting |
WO2018164198A1 (ja) * | 2017-03-09 | 2018-09-13 | Scivax株式会社 | 電磁波増強素子およびその製造方法並びにアミノ酸配列決定方法 |
US11293920B2 (en) * | 2017-04-18 | 2022-04-05 | Okinawa Institute Of Science And Technology School Corporation | Nanoplasmonic instrumentation, materials, methods and system integration |
EP4022007B1 (en) | 2019-08-28 | 2024-04-03 | Merck Patent GmbH | Aromatic isothiocyanates |
CN114502691A (zh) * | 2019-10-10 | 2022-05-13 | 默克专利股份有限公司 | 氟化芳族化合物 |
WO2021116080A1 (en) | 2019-12-10 | 2021-06-17 | Merck Patent Gmbh | Aromatic isothiocyanates |
WO2021262163A1 (en) * | 2020-06-24 | 2021-12-30 | Hewlett-Packard Development Company, L.P. | Plasmonic sensors and detection |
US11808747B1 (en) * | 2022-07-06 | 2023-11-07 | King Fahd University Of Petroleum And Minerals | Hydrogen gas sensor, and method of making and using thereof |
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GB0216197D0 (en) * | 2002-07-12 | 2002-08-21 | Univ Strathclyde | Serrs active particles |
US7163659B2 (en) * | 2002-12-03 | 2007-01-16 | Hewlett-Packard Development Company, L.P. | Free-standing nanowire sensor and method for detecting an analyte in a fluid |
US7579077B2 (en) | 2003-05-05 | 2009-08-25 | Nanosys, Inc. | Nanofiber surfaces for use in enhanced surface area applications |
KR100554155B1 (ko) | 2003-06-09 | 2006-02-22 | 학교법인 포항공과대학교 | 금속/반도체 나노막대 이종구조를 이용한 전극 구조물 및그 제조 방법 |
US8048377B1 (en) | 2004-03-08 | 2011-11-01 | Hewlett-Packard Development Company, L.P. | Immobilizing chemical or biological sensing molecules on semi-conducting nanowires |
CN100357738C (zh) * | 2004-03-26 | 2007-12-26 | 博奥生物有限公司 | 一种检测小分子化合物的方法 |
US7245370B2 (en) | 2005-01-06 | 2007-07-17 | Hewlett-Packard Development Company, L.P. | Nanowires for surface-enhanced Raman scattering molecular sensors |
JP4783907B2 (ja) * | 2005-01-07 | 2011-09-28 | 国立大学法人京都大学 | 光学的センサ及びその製造方法 |
US7247594B2 (en) * | 2005-04-13 | 2007-07-24 | Chevron Phillips Chemical Co. Lp | Catalysts for olefin polymerization |
DE102006013484A1 (de) | 2006-03-23 | 2007-09-27 | Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh | Metallische Nanodrähte mit einer Hülle aus Oxid und Herstellungsverfahren derselben |
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WO2010132727A1 (en) | 2009-05-13 | 2010-11-18 | University Of Southern California | Electrical wiring of polynucleotides for nanoelectronic applications |
JP5412207B2 (ja) * | 2009-08-04 | 2014-02-12 | 株式会社日立ハイテクノロジーズ | 生体分子固定基板及びその製造方法 |
US20110166045A1 (en) | 2009-12-01 | 2011-07-07 | Anuj Dhawan | Wafer scale plasmonics-active metallic nanostructures and methods of fabricating same |
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CN102822249B (zh) * | 2010-03-19 | 2016-04-06 | 新日铁住金化学株式会社 | 金属微粒复合体 |
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US8358407B2 (en) * | 2010-04-30 | 2013-01-22 | Hewlett-Packard Development Company, L.P. | Enhancing signals in Surface Enhanced Raman Spectroscopy (SERS) |
US8462333B2 (en) * | 2010-10-15 | 2013-06-11 | Hewlett-Packard Development Company, L.P. | Apparatus for performing SERS |
WO2012079018A2 (en) * | 2010-12-09 | 2012-06-14 | University Of Florida Research Foundation, Inc. | Surface plasmon sensors and methods for producing the same |
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2013
- 2013-01-25 DK DK13872987.6T patent/DK2948757T3/da active
- 2013-01-25 JP JP2015555135A patent/JP5969711B2/ja not_active Expired - Fee Related
- 2013-01-25 US US14/763,491 patent/US9567214B2/en active Active
- 2013-01-25 EP EP13872987.6A patent/EP2948757B1/en active Active
- 2013-01-25 EP EP17167733.9A patent/EP3214431B1/en active Active
- 2013-01-25 CN CN201380071302.1A patent/CN104937391A/zh active Pending
- 2013-01-25 WO PCT/US2013/023266 patent/WO2014116238A1/en active Application Filing
- 2013-01-25 CN CN201710888394.2A patent/CN107655860A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP3214431A1 (en) | 2017-09-06 |
US20150355097A1 (en) | 2015-12-10 |
EP2948757A4 (en) | 2015-12-23 |
JP5969711B2 (ja) | 2016-08-17 |
CN107655860A (zh) | 2018-02-02 |
JP2016510405A (ja) | 2016-04-07 |
EP2948757A1 (en) | 2015-12-02 |
WO2014116238A1 (en) | 2014-07-31 |
CN104937391A (zh) | 2015-09-23 |
US9567214B2 (en) | 2017-02-14 |
EP2948757B1 (en) | 2017-04-26 |
EP3214431B1 (en) | 2021-03-03 |
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