DK2446536T3 - Fremgangsmåde til kommutering af en omformerfase med omvendt ledende IGBT'er - Google Patents
Fremgangsmåde til kommutering af en omformerfase med omvendt ledende IGBT'er Download PDFInfo
- Publication number
- DK2446536T3 DK2446536T3 DK10721471.0T DK10721471T DK2446536T3 DK 2446536 T3 DK2446536 T3 DK 2446536T3 DK 10721471 T DK10721471 T DK 10721471T DK 2446536 T3 DK2446536 T3 DK 2446536T3
- Authority
- DK
- Denmark
- Prior art keywords
- igbt
- operated
- mode
- current
- reverse conducting
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/16—Means for providing current step on switching, e.g. with saturable reactor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
- H03K17/665—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Claims (9)
1. Fremgangsmåde til kommutering fra en omvendt ledende IGBT (T1), der drives i diodemodus, til en omvendt ledende IGBT (T2), der drives i IGBT-mo-dus, der danner en omformerfase og er forbundet elektrisk parallelt med en jævnspændingskilde (4), med følgende fremgangsmådetrin: a) tilkobling af IGBT'en (T1), der drives i diodemodus, ved udløbet af en forudbestemt tidsperiode (ΔΤι), efter at et styresignal (4) af denne IGBT (T1) har skiftet til en off-status, b) tilkobling af IGBT'en (T2), der drives i IGBT-modus, ved udløbet af en forudbestemt tidsperiode (ΔΤ3), efter at et styresignal (4) af denne IGBT (T2) har skiftet til en on-status, hvor denne tidsperiode (ΔΤ3) er større end tidsperioden (AT-i)for IGBT'en (T1), der drives i diodemodus, c) frakobling af IGBT'en (T1), der drives i diodemodus, inden IGBT'en (T2), der drives i IGBT-modus, tilkobles, kendetegnet ved, at IGBT'en (T1), der drives i diodemodus, først bliver frakoblet, så snart en strøm i den omvendt ledende IGBT (T2), der drives i IGBT-modus, begynder at løbe.
2. Fremgangsmåde ifølge krav 1, kendetegnet ved, at påbegyndelsen af strømgennemløbet i den omvendt ledende IGBT (T2), der drives i IGBT-modus, konstateres i kraft afen strømændring afen kol lektorstrøm (ic), der løber i en omvendt ledende IGBT (T1), der drives i diodemodus.
3. Fremgangsmåde ifølge krav 2, kendetegnet ved, at strømændringen afen omvendt ledende IGBT (T1), der drives i diodemodus, bestemmes ved hjælp af en spænding (um), der falder ved en induktans (18), der befinder sig i kom-muteringskredsløbet.
4. Fremgangsmåde ifølge krav 1, kendetegnet ved, at en kollektorstrøm (ic), der løber gennem den omvendt ledende IGBT (T1), der drives i diodemodus, måles og evalueres.
5. Fremgangsmåde ifølge krav 4, kendetegnet ved, at den målte kollektor-strøm (ic) gennem den omvendt ledende IGBT (T1), der drives i diodemodus, evalueres for strøm-nulgennemgang.
6. Indretning til udførelse af fremgangsmåden ifølge et af kravene 1 til 5, med omvendt ledende IGBT'er (T1,T2) afen omformerfase, som er forbundet elektrisk parallelt med en jævnspændingskilde (4), og hvor hver omvendt ledende IGBT (T1,T2) er forsynet med et driverkredsløb (16), som er forbundet henholdsvis på udgangssiden med et gate og en emittertilslutning (G,E) af en IGBT (T1,T2), kendetegnet ved, at der er tilvejebragt en styreindretning (14) og en indretning til registrering af en kollektorstrøm (ic), hvor denne evalueringsindretning (14) på udgangssiden er forbundet med en indgang på driverkredsløbet (16) og på indgangssiden er forbundet med udgangstilslutninger (20,E) af denne indretning, og hvor hver evalueringsindretning (14) er forsynet med et styresignal, der svarer til den tilhørende omvendt ledende IGBT (T1 ,T2)
7. Indretning ifølge krav 6, kendetegnet ved, at indretningen til registrering af en kollektorstrøm (ic) er en induktans (18).
8. Indretning ifølge krav 6, kendetegnet ved, at indretningen til registrering af en kollektorstrøm (ic) er en strømtransformator (22), der er opbygget i henhold til Rogowsky-spole-princippet.
9. Indretning ifølge krav 6, kendetegnet ved, at indretningen til registrering af en kollektorstrøm (ic) er en transformator (24), der kan mættes.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009030740A DE102009030740A1 (de) | 2009-06-26 | 2009-06-26 | Kommutierungsverfahren einer Stromrichterphase mit rückwärts leitfähigen IGBTs |
PCT/EP2010/056682 WO2010149430A2 (de) | 2009-06-26 | 2010-05-17 | Kommutierungsverfahren einer stromrichterphase mit rückwärts leitfähigen igbts |
Publications (1)
Publication Number | Publication Date |
---|---|
DK2446536T3 true DK2446536T3 (da) | 2018-12-10 |
Family
ID=43217920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK10721471.0T DK2446536T3 (da) | 2009-06-26 | 2010-05-17 | Fremgangsmåde til kommutering af en omformerfase med omvendt ledende IGBT'er |
Country Status (8)
Country | Link |
---|---|
US (1) | US9263933B2 (da) |
EP (1) | EP2446536B1 (da) |
CN (1) | CN102804605B (da) |
DE (1) | DE102009030740A1 (da) |
DK (1) | DK2446536T3 (da) |
ES (1) | ES2699714T3 (da) |
RU (1) | RU2559760C2 (da) |
WO (1) | WO2010149430A2 (da) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2586126B1 (en) * | 2010-06-23 | 2016-01-27 | ABB Technology AG | Voltage converting apparatus and method for converting a voltage |
DE102011003938A1 (de) * | 2011-02-10 | 2012-08-16 | Siemens Aktiengesellschaft | Verfahren zur Steuerung zweier elektrisch in Reihe geschalteter rückwärts leitfähiger IGBTs einer Halbbrücke |
US8471600B2 (en) * | 2011-09-30 | 2013-06-25 | Infineon Technologies Ag | Detection of the zero crossing of the load current in a semiconductor device |
WO2013144742A1 (en) | 2012-03-26 | 2013-10-03 | Koninklijke Philips N.V. | Medical imaging device |
CN105324939B (zh) | 2013-04-05 | 2018-04-24 | Abb技术有限公司 | Rc-igbt开关脉冲控制 |
DE102013213986B4 (de) | 2013-07-17 | 2016-02-04 | Siemens Aktiengesellschaft | Dreipunkt-Stromrichter |
US9362859B2 (en) * | 2013-09-25 | 2016-06-07 | General Electric Company | System and method for controlling switching elements within a single-phase bridge circuit |
GB2520617B (en) * | 2013-10-22 | 2020-12-30 | Abb Schweiz Ag | RC-IGBT with freewheeling SiC diode |
PL3072143T3 (pl) * | 2014-01-21 | 2018-03-30 | Siemens Aktiengesellschaft | Urządzenie do przełączania prądu stałego |
EP3002866B1 (de) | 2014-09-30 | 2021-09-08 | Siemens Aktiengesellschaft | Spannungszwischenkreis-Stromrichter in Fünfpunkttopologie |
US20170248645A1 (en) * | 2016-02-29 | 2017-08-31 | Infineon Technologies Ag | Method and Device for Short Circuit Detection in Power Semiconductor Switches |
US10254327B2 (en) | 2016-02-29 | 2019-04-09 | Infineon Technologies Ag | Method and device for short circuit detection in power semiconductor switches |
EP3261253A1 (de) * | 2016-06-24 | 2017-12-27 | Siemens Aktiengesellschaft | Ansteuerverfahren und vorrichtung zur kommutierung eines phasenstroms im brückenzweig einer brückenschaltung |
US9941256B1 (en) * | 2016-12-21 | 2018-04-10 | Ixys Corporation | Inverse diode stack |
RU2652427C1 (ru) * | 2017-06-06 | 2018-04-26 | Общество с ограниченной ответственностью Научно-производственное предприятие "Резонанс" (ООО НПП "Резонанс") | Силовой транзисторный коммутатор |
US20220399879A1 (en) * | 2021-06-11 | 2022-12-15 | Texas Instruments Incorporated | Synchronous switch control method |
CN114039587B (zh) * | 2022-01-11 | 2022-04-22 | 深圳市微源半导体股份有限公司 | 关机控制电路、电池保护芯片和电子设备 |
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US5321348A (en) * | 1991-03-08 | 1994-06-14 | Vlt Corporation | Boost switching power conversion |
JP2806283B2 (ja) * | 1994-12-12 | 1998-09-30 | ヤマハ株式会社 | スイッチング電源回路 |
US5815391A (en) * | 1996-03-19 | 1998-09-29 | International Rectifier Corporation | Current sensing circuit for pulse width modulated motor drive |
EP0993105B1 (en) * | 1998-10-07 | 2003-01-08 | STMicroelectronics S.r.l. | Control of power transfer in a flyback converter by modulating the off-phase in function of the load |
DE10044446A1 (de) * | 2000-09-08 | 2002-03-21 | Transmit Technologietransfer | Verfahren und Vorrichtung zur Verkürzung der Verriegelungszeiten bei Wechselrichtern |
WO2002041085A2 (en) * | 2000-11-14 | 2002-05-23 | Yaskawa Eshed Technology Ltd. | System and method to eliminate the dead time influence in a pwm-driven system |
JP2002204581A (ja) * | 2001-01-09 | 2002-07-19 | Fuji Electric Co Ltd | 電力用半導体モジュール |
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CN100405738C (zh) * | 2004-07-09 | 2008-07-23 | 清华大学 | 逆阻式绝缘栅双极型晶体管的驱动保护电路 |
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DE102008045410B4 (de) * | 2007-09-05 | 2019-07-11 | Denso Corporation | Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode |
EP2073271A1 (en) | 2007-12-19 | 2009-06-24 | ABB Technology AG | Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor |
US20100079192A1 (en) * | 2008-09-29 | 2010-04-01 | Bernhard Strzalkowski | Drive for a half-bridge circuit |
US8471600B2 (en) * | 2011-09-30 | 2013-06-25 | Infineon Technologies Ag | Detection of the zero crossing of the load current in a semiconductor device |
-
2009
- 2009-06-26 DE DE102009030740A patent/DE102009030740A1/de not_active Ceased
-
2010
- 2010-05-17 RU RU2012102636/08A patent/RU2559760C2/ru active
- 2010-05-17 US US13/380,172 patent/US9263933B2/en active Active
- 2010-05-17 ES ES10721471T patent/ES2699714T3/es active Active
- 2010-05-17 WO PCT/EP2010/056682 patent/WO2010149430A2/de active Application Filing
- 2010-05-17 EP EP10721471.0A patent/EP2446536B1/de active Active
- 2010-05-17 CN CN201080028199.9A patent/CN102804605B/zh active Active
- 2010-05-17 DK DK10721471.0T patent/DK2446536T3/da active
Also Published As
Publication number | Publication date |
---|---|
EP2446536A2 (de) | 2012-05-02 |
RU2012102636A (ru) | 2013-08-10 |
WO2010149430A2 (de) | 2010-12-29 |
CN102804605A (zh) | 2012-11-28 |
WO2010149430A3 (de) | 2011-06-03 |
ES2699714T3 (es) | 2019-02-12 |
US20120092912A1 (en) | 2012-04-19 |
DE102009030740A1 (de) | 2010-12-30 |
EP2446536B1 (de) | 2018-08-29 |
RU2559760C2 (ru) | 2015-08-10 |
US9263933B2 (en) | 2016-02-16 |
CN102804605B (zh) | 2016-06-08 |
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