DK2435600T3 - Fremgangsmåde til afsætning af et til trådsammenføjning egnet palladiumlag på lederbaner på en printplade samt palladiumbad til anvendelse ved fremgangsmåden - Google Patents
Fremgangsmåde til afsætning af et til trådsammenføjning egnet palladiumlag på lederbaner på en printplade samt palladiumbad til anvendelse ved fremgangsmådenInfo
- Publication number
- DK2435600T3 DK2435600T3 DK10785333.5T DK10785333T DK2435600T3 DK 2435600 T3 DK2435600 T3 DK 2435600T3 DK 10785333 T DK10785333 T DK 10785333T DK 2435600 T3 DK2435600 T3 DK 2435600T3
- Authority
- DK
- Denmark
- Prior art keywords
- palladium
- depositing
- circuit board
- printed circuit
- layer suitable
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/48664—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/48764—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/85464—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009053302 | 2009-11-10 | ||
DE102010011269.0A DE102010011269B4 (de) | 2009-11-10 | 2010-03-13 | Verfahren zum Abscheiden einer für das Drahtbonden geeigneten Palladiumschicht auf Leiterbahnen einer Schaltungsträgerplatte und Verwendung eines Palladiumbades in dem Verfahren |
PCT/EP2010/006769 WO2011057745A2 (de) | 2009-11-10 | 2010-11-06 | Verfahren zum abscheiden einer für das drahtbonden geeigneten palladiumschicht auf leiterbahnen einer schaltungsträgerplatte und palladiumbad zur verwendung in dem verfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
DK2435600T3 true DK2435600T3 (da) | 2013-10-28 |
Family
ID=43902193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK10785333.5T DK2435600T3 (da) | 2009-11-10 | 2010-11-06 | Fremgangsmåde til afsætning af et til trådsammenføjning egnet palladiumlag på lederbaner på en printplade samt palladiumbad til anvendelse ved fremgangsmåden |
Country Status (7)
Country | Link |
---|---|
US (1) | US20120244276A1 (da) |
EP (1) | EP2435600B1 (da) |
CN (1) | CN102482780B (da) |
DE (1) | DE102010011269B4 (da) |
DK (1) | DK2435600T3 (da) |
ES (1) | ES2433237T3 (da) |
WO (1) | WO2011057745A2 (da) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101365457B1 (ko) * | 2012-03-15 | 2014-02-21 | 한국기계연구원 | 니켈 코팅 나노카본의 제조 방법 |
JP6100924B2 (ja) * | 2014-01-06 | 2017-03-22 | 富士フイルム株式会社 | 導電膜形成用組成物、導電膜、有機薄膜トランジスタ、電子ペーパー、ディスプレイデバイス、配線板 |
CN106574368A (zh) * | 2014-08-15 | 2017-04-19 | 德国艾托特克公司 | 用于减少铜和铜合金电路的光学反射率的方法和触摸屏装置 |
JP6620103B2 (ja) * | 2014-09-04 | 2019-12-11 | 日本高純度化学株式会社 | パラジウムめっき液及びそれを用いて得られたパラジウム皮膜 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB544534A (en) * | 1940-05-20 | 1942-04-16 | Mond Nickel Co Ltd | Improvements relating to the electro-deposition of palladium |
US3972787A (en) * | 1974-06-14 | 1976-08-03 | Lea-Ronal, Inc. | Palladium electrolyte baths utilizing quaternized pyridine compounds as brighteners |
US4098656A (en) * | 1976-03-11 | 1978-07-04 | Oxy Metal Industries Corporation | Bright palladium electroplating baths |
US4487665A (en) * | 1980-12-17 | 1984-12-11 | Omi International Corporation | Electroplating bath and process for white palladium |
US4911799A (en) * | 1989-08-29 | 1990-03-27 | At&T Bell Laboratories | Electrodeposition of palladium films |
US5178745A (en) * | 1991-05-03 | 1993-01-12 | At&T Bell Laboratories | Acidic palladium strike bath |
DE4415211A1 (de) | 1993-05-13 | 1994-12-08 | Atotech Deutschland Gmbh | Verfahren zur Abscheidung von Palladiumschichten |
JP3350026B2 (ja) * | 2000-08-01 | 2002-11-25 | エフシーエム株式会社 | 電子部品用材料、電子部品用材料の接続方法、ボールグリッドアレイ型電子部品およびボールグリッドアレイ型電子部品の接続方法 |
DE10313517B4 (de) * | 2003-03-25 | 2006-03-30 | Atotech Deutschland Gmbh | Lösung zum Ätzen von Kupfer, Verfahren zum Vorbehandeln einer Schicht aus Kupfer sowie Anwendung des Verfahrens |
JP4603812B2 (ja) * | 2003-05-12 | 2010-12-22 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 改良されたスズめっき方法 |
US20080138528A1 (en) * | 2005-01-12 | 2008-06-12 | Umicore Galvanotechnik Gmbh | Method for Depositing Palladium Layers and Palladium Bath Therefor |
JP5503111B2 (ja) * | 2007-04-03 | 2014-05-28 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 金属メッキ組成物および方法 |
CN101348928B (zh) * | 2007-07-20 | 2012-07-04 | 罗门哈斯电子材料有限公司 | 镀钯及镀钯合金之高速方法 |
EP2177646B1 (en) * | 2008-10-17 | 2011-03-23 | ATOTECH Deutschland GmbH | Stress-reduced Ni-P/Pd stacks for bondable wafer surfaces |
CN101481263B (zh) * | 2009-02-26 | 2012-02-15 | 南京工业大学 | 一种制备负载型钯或钯合金膜的方法 |
-
2010
- 2010-03-13 DE DE102010011269.0A patent/DE102010011269B4/de not_active Expired - Fee Related
- 2010-11-06 DK DK10785333.5T patent/DK2435600T3/da active
- 2010-11-06 US US13/505,800 patent/US20120244276A1/en not_active Abandoned
- 2010-11-06 WO PCT/EP2010/006769 patent/WO2011057745A2/de active Application Filing
- 2010-11-06 EP EP10785333.5A patent/EP2435600B1/de not_active Not-in-force
- 2010-11-06 ES ES10785333T patent/ES2433237T3/es active Active
- 2010-11-06 CN CN201080027555.5A patent/CN102482780B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102482780B (zh) | 2014-12-03 |
DE102010011269A1 (de) | 2011-05-26 |
WO2011057745A2 (de) | 2011-05-19 |
EP2435600A2 (de) | 2012-04-04 |
EP2435600B1 (de) | 2013-07-31 |
US20120244276A1 (en) | 2012-09-27 |
WO2011057745A3 (de) | 2011-07-21 |
CN102482780A (zh) | 2012-05-30 |
DE102010011269B4 (de) | 2014-02-13 |
ES2433237T3 (es) | 2013-12-10 |
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