DK1604195T3 - Fremgangsmåde og apparat til detektering af vand på et skibsdæk - Google Patents

Fremgangsmåde og apparat til detektering af vand på et skibsdæk

Info

Publication number
DK1604195T3
DK1604195T3 DK04719925T DK04719925T DK1604195T3 DK 1604195 T3 DK1604195 T3 DK 1604195T3 DK 04719925 T DK04719925 T DK 04719925T DK 04719925 T DK04719925 T DK 04719925T DK 1604195 T3 DK1604195 T3 DK 1604195T3
Authority
DK
Denmark
Prior art keywords
ship
deck
detecting
located below
detecting water
Prior art date
Application number
DK04719925T
Other languages
English (en)
Inventor
Niels Hald Pedersen
Kjeld Dittmann
Original Assignee
Force Technology
Lyngsoe Marine As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Force Technology, Lyngsoe Marine As filed Critical Force Technology
Application granted granted Critical
Publication of DK1604195T3 publication Critical patent/DK1604195T3/da

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203Measuring back scattering
    • G01N23/204Measuring back scattering using neutrons
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B63SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
    • B63BSHIPS OR OTHER WATERBORNE VESSELS; EQUIPMENT FOR SHIPPING 
    • B63B43/00Improving safety of vessels, e.g. damage control, not otherwise provided for
    • B63B2043/006Methods or installations specially adapted for detecting ingress of ambient water, e.g. leak detectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • General Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Radiation (AREA)
  • Examining Or Testing Airtightness (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Measuring Arrangements Characterized By The Use Of Fluids (AREA)
DK04719925T 2003-03-14 2004-03-12 Fremgangsmåde og apparat til detektering af vand på et skibsdæk DK1604195T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DKPA200300387 2003-03-14
PCT/DK2004/000161 WO2004081551A1 (en) 2003-03-14 2004-03-12 A method and an apparatus for detecting water on a ship’s deck

Publications (1)

Publication Number Publication Date
DK1604195T3 true DK1604195T3 (da) 2007-11-26

Family

ID=32981682

Family Applications (1)

Application Number Title Priority Date Filing Date
DK04719925T DK1604195T3 (da) 2003-03-14 2004-03-12 Fremgangsmåde og apparat til detektering af vand på et skibsdæk

Country Status (14)

Country Link
US (1) US7247857B2 (da)
EP (1) EP1604195B1 (da)
JP (1) JP4676425B2 (da)
KR (1) KR101122908B1 (da)
CN (1) CN1761872B (da)
AT (1) ATE370402T1 (da)
CA (1) CA2519077C (da)
DE (1) DE602004008237T2 (da)
DK (1) DK1604195T3 (da)
ES (1) ES2291861T3 (da)
HK (1) HK1089508A1 (da)
NO (1) NO342188B1 (da)
PT (1) PT1604195E (da)
WO (1) WO2004081551A1 (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2883074B1 (fr) 2005-03-10 2007-06-08 Centre Nat Rech Scient Systeme de detection bidimensionnelle pour rayonnement neutrons
JPWO2022085591A1 (da) * 2020-10-19 2022-04-28

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073443A (en) * 1964-09-16 1967-06-28 Vakutronik Wissenschaftlicher Arrangement for the measurement of moisture by means of neutrons
US3716711A (en) * 1971-06-18 1973-02-13 Us Navy Water level gauge using neutron source
US4646068A (en) * 1982-01-19 1987-02-24 Skala Stephen F Ice monitoring system using neutron moderation
CN87206967U (zh) * 1987-05-04 1988-03-30 首都钢铁公司 中子测水仪探头
US4870287A (en) * 1988-03-03 1989-09-26 Loma Linda University Medical Center Multi-station proton beam therapy system
US5446288A (en) * 1993-10-25 1995-08-29 Tumer; Tumay O. Integrated substance detection instrument
US5821862A (en) * 1994-08-30 1998-10-13 University Of Guelph Method and apparatus for measuring ice thickness on substrates using backscattering of gamma rays
CN2293829Y (zh) * 1996-09-06 1998-10-07 湖南省交通科学研究所 深层核子密度含水量测定仪
JP2002082073A (ja) * 2000-09-10 2002-03-22 Haruo Chisaka コンクリート欠陥非破壊検査装置

Also Published As

Publication number Publication date
NO342188B1 (no) 2018-04-16
EP1604195B1 (en) 2007-08-15
KR20060016745A (ko) 2006-02-22
US20060226369A1 (en) 2006-10-12
ES2291861T3 (es) 2008-03-01
CA2519077A1 (en) 2004-09-23
DE602004008237T2 (de) 2008-05-08
JP4676425B2 (ja) 2011-04-27
CN1761872A (zh) 2006-04-19
HK1089508A1 (en) 2006-12-01
CA2519077C (en) 2016-05-03
KR101122908B1 (ko) 2012-03-20
CN1761872B (zh) 2010-12-15
WO2004081551A1 (en) 2004-09-23
JP2006520889A (ja) 2006-09-14
NO20054659D0 (no) 2005-10-11
EP1604195A1 (en) 2005-12-14
NO20054659L (no) 2005-11-04
DE602004008237D1 (de) 2007-09-27
PT1604195E (pt) 2007-11-20
US7247857B2 (en) 2007-07-24
ATE370402T1 (de) 2007-09-15

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