Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
  • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
  • G01N23/203—Measuring back scattering
  • G01N23/204—Measuring back scattering using neutrons
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
  • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
  • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66007—Multistep manufacturing processes
  • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
  • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
  • H01L29/66409—Unipolar field-effect transistors
  • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
  • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
  • H01L29/7881—Programmable transistors with only two possible levels of programmation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
  • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
  • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
  • B63B—SHIPS OR OTHER WATERBORNE VESSELS; EQUIPMENT FOR SHIPPING 
  • B63B43/00—Improving safety of vessels, e.g. damage control, not otherwise provided for
  • B63B2043/006—Methods or installations specially adapted for detecting ingress of ambient water, e.g. leak detectors

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Chemical & Material Sciences (AREA)
• General Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Immunology (AREA)
• General Health & Medical Sciences (AREA)
• Biochemistry (AREA)
• Health & Medical Sciences (AREA)
• Pathology (AREA)
• Analytical Chemistry (AREA)
• Computer Hardware Design (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Crystallography & Structural Chemistry (AREA)
• Life Sciences & Earth Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Analysing Materials By The Use Of Radiation (AREA)
• Measurement Of Radiation (AREA)
• Examining Or Testing Airtightness (AREA)
• Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
• Geophysics And Detection Of Objects (AREA)
• Measuring Arrangements Characterized By The Use Of Fluids (AREA)

Applications Claiming Priority (3)

Publications (2)

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ID=32981682

Family Applications (1)

Country Status (14)

Families Citing this family (2)

Family Cites Families (9)

• 2004
  • 2004-03-12 ES ES04719925T patent/ES2291861T3/es not_active Expired - Lifetime
  • 2004-03-12 WO PCT/DK2004/000161 patent/WO2004081551A1/en active IP Right Grant
  • 2004-03-12 JP JP2006504322A patent/JP4676425B2/ja not_active Expired - Fee Related
  • 2004-03-12 DE DE602004008237T patent/DE602004008237T2/de not_active Expired - Lifetime
  • 2004-03-12 CA CA2519077A patent/CA2519077C/en not_active Expired - Fee Related
  • 2004-03-12 KR KR1020057017191A patent/KR101122908B1/ko active IP Right Grant
  • 2004-03-12 US US10/548,512 patent/US7247857B2/en not_active Expired - Lifetime
  • 2004-03-12 PT PT04719925T patent/PT1604195E/pt unknown
  • 2004-03-12 CN CN200480006950XA patent/CN1761872B/zh not_active Expired - Fee Related
  • 2004-03-12 AT AT04719925T patent/ATE370402T1/de not_active IP Right Cessation
  • 2004-03-12 EP EP04719925A patent/EP1604195B1/de not_active Expired - Lifetime
  • 2004-03-12 DK DK04719925T patent/DK1604195T3/da active
• 2005
  • 2005-10-11 NO NO20054659A patent/NO342188B1/no not_active IP Right Cessation
• 2006
  • 2006-09-05 HK HK06109838.1A patent/HK1089508A1/xx not_active IP Right Cessation

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