DK143457C - Fremgangsmaade til fremstilling af (111)-orienterede halvlederenkrystalstave med i retning mod stavmidten faldende specifikmodstand - Google Patents

Fremgangsmaade til fremstilling af (111)-orienterede halvlederenkrystalstave med i retning mod stavmidten faldende specifikmodstand

Info

Publication number
DK143457C
DK143457C DK387773A DK387773A DK143457C DK 143457 C DK143457 C DK 143457C DK 387773 A DK387773 A DK 387773A DK 387773 A DK387773 A DK 387773A DK 143457 C DK143457 C DK 143457C
Authority
DK
Denmark
Prior art keywords
manufacturing
specific resistance
semiconductor crystals
oriented semiconductor
crystals specific
Prior art date
Application number
DK387773A
Other languages
Danish (da)
English (en)
Other versions
DK143457B (da
Inventor
W Keller
A Muehlbauer
K Reuschel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK143457B publication Critical patent/DK143457B/da
Application granted granted Critical
Publication of DK143457C publication Critical patent/DK143457C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/004—Sight-glasses therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
DK387773A 1972-07-13 1973-07-12 Fremgangsmaade til fremstilling af (111)-orienterede halvlederenkrystalstave med i retning mod stavmidten faldende specifikmodstand DK143457C (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2234512A DE2234512C3 (de) 1972-07-13 1972-07-13 Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand
DE2234512 1972-07-13

Publications (2)

Publication Number Publication Date
DK143457B DK143457B (da) 1981-08-24
DK143457C true DK143457C (da) 1981-12-28

Family

ID=5850582

Family Applications (1)

Application Number Title Priority Date Filing Date
DK387773A DK143457C (da) 1972-07-13 1973-07-12 Fremgangsmaade til fremstilling af (111)-orienterede halvlederenkrystalstave med i retning mod stavmidten faldende specifikmodstand

Country Status (10)

Country Link
US (1) US3915660A (ja)
JP (1) JPS4953372A (ja)
BE (1) BE802326A (ja)
CA (1) CA1016847A (ja)
DE (1) DE2234512C3 (ja)
DK (1) DK143457C (ja)
FR (1) FR2192870B1 (ja)
GB (1) GB1375132A (ja)
IT (1) IT992613B (ja)
NL (1) NL7305060A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50159967A (ja) * 1974-06-17 1975-12-24
GB1542868A (en) * 1975-11-14 1979-03-28 Siemens Ag Production of phosphorus-doped monocrystalline silicon rods
JPS61117200A (ja) * 1984-11-13 1986-06-04 Alps Electric Co Ltd 酸化テルルウイスカ−およびその製造方法
US6452211B1 (en) 1997-06-10 2002-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL243511A (ja) * 1959-09-18
NL244489A (ja) * 1959-10-19
NL301226A (ja) * 1962-12-03
DE1218404B (de) * 1964-02-01 1966-06-08 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
BE684801A (ja) * 1965-08-05 1967-01-03

Also Published As

Publication number Publication date
FR2192870B1 (ja) 1977-12-23
CA1016847A (en) 1977-09-06
GB1375132A (ja) 1974-11-27
FR2192870A1 (ja) 1974-02-15
DE2234512B2 (de) 1978-08-24
US3915660A (en) 1975-10-28
BE802326A (fr) 1973-11-05
JPS4953372A (ja) 1974-05-23
DK143457B (da) 1981-08-24
DE2234512A1 (de) 1974-01-24
DE2234512C3 (de) 1979-04-19
IT992613B (it) 1975-09-30
NL7305060A (ja) 1974-01-15

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Legal Events

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PBP Patent lapsed