DK142062B - PROCEDURE AND APPARATUS FOR DIGEL-FREE ZONE MELTING OF SEMICONDUCTOR WAS USED BY A HEAT COIL - Google Patents
PROCEDURE AND APPARATUS FOR DIGEL-FREE ZONE MELTING OF SEMICONDUCTOR WAS USED BY A HEAT COIL Download PDFInfo
- Publication number
- DK142062B DK142062B DK212573AA DK212573A DK142062B DK 142062 B DK142062 B DK 142062B DK 212573A A DK212573A A DK 212573AA DK 212573 A DK212573 A DK 212573A DK 142062 B DK142062 B DK 142062B
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- Denmark
- Prior art keywords
- control
- semiconductor rod
- sizes
- semiconductor
- circuit
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Induction Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
142062 i142062 i
Opfindelsen angår en fremgangsmåde til digelfri zonesmeltning af en halvlederstav ved hjælp af en varme-spole, som aksialt omslutter halvlederstaven og kan forskydes parallelt med dennes akseretning, hvilken spole 5 fødes med elektrisk højfrekvensenergi og ved induktiv opvarmning tilvejebringer en gennem halvlederstaven vandrende smeltezone, ved hvilken fremgangsmåde den aksiale afstand mellem de to faste dele af halvlederstaven, der bærer smeltezonen, styres med en første 10 regulering samtidigt med, at energitilførslen til smeltezonen styres med en anden regulering, idet reguleringerne hver sker ved hjælp af afvigelsen af en smeltezonens tilstand bestemmende reguleringsstørrelse fra den tilsvarende bør-værdi, hvorved der som regule-15 ringsstørrelser anvendes frekvensen af den fra en HF-generator over en som elektrisk svingningskreds udformet varmestrømkreds til varmespolen afgivne varmstrøm, samt styrken af den til HF-generatoren førte anodestrøm.The invention relates to a method for crucible zone melting of a semiconductor rod by means of a heat coil which axially encloses the semiconductor rod and can be displaced parallel to its axis direction, which coil 5 is fed with electric high frequency energy and provides an inductive heating zone through a semiconductor rod which the axial distance between the two fixed portions of the semiconductor rod carrying the melting zone is controlled by a first regulation simultaneously with the energy supply to the melting zone being controlled by a second regulation, the adjustments each being effected by the deviation of a state of the melting zone determining the the corresponding setpoint, which uses as the control variable the frequency of the heat flow supplied from the HF generator to the heating coil designed as an electric oscillating circuit, and the strength of the anode current supplied to the HF generator.
Sådanne fremgangsmåder kendes og en beskrevet 20 udførligt i litteraturen, f.eks. i tysk patentskrift nr. 1.277.813. Principielt består fremgangsmåden i, at en varmespole, som omgiver halvlederstaven ringformet, føres i stavens længderetning, og at halvlederstaven ved induktiv opvarmning smeltes i det område, hvor varme-25 spolen befinder sig. Ved at føre smeltezonen gennem halvlederstaven opnås en omdannelse af halvlederstaven fra polykrystallinsk til enkrystallinsk materiale samt en rensning af materialet og en påvirkning af stavdiameteren.Such methods are known and described in detail in the literature, e.g. in German Patent No. 1,277,813. In principle, the method consists in passing a heat coil surrounding the semiconductor rod in the longitudinal direction of the rod and the semiconductor rod being melted by inductive heating in the region where the heating coil is located. Passing the melt zone through the semiconductor rod achieves a conversion of the semiconductor rod from polycrystalline to single crystalline material as well as a purification of the material and an influence on the rod diameter.
30 Stavdiameteren kan i første linie påvirkes af størrelsen og formen af det emeltede volumen af smeltezonen, som kan bestemmes ved hjælp af stræknings-opstem-ningsmekanismen og ved tilføringen af højfrekvensener-gien. Med denne fremgangsmåde med anodestrømmen eller 35 varmekredsspændingen og generatorfrekvensen som reguleringsstørrelser trækkes der i overensstemmelse med et forelagt program for generatorfrekvens og anodestrøm (= varmestrøm) overgange fra den tynde kimkrystal til 2 1A 2 O 6 2 den foreskrevne diameter af halvlederstaven, og ligeledes reguleres diameteren til konstant værdi.The rod diameter may, in the first line, be influenced by the size and shape of the emulsified volume of the melt zone, which can be determined by the stretch tuning mechanism and by the application of the high frequency energy. With this method of the anode current or the heating circuit voltage and the generator frequency as control sizes, in accordance with a submitted program of generator frequency and anode current (= heat flow) transitions from the thin seed crystal to the 2 1A 2 O 6 2 the required diameter of the semiconductor diameter to constant value.
Det har imidlertid vist sig, at der med den tidligere anvendte elektriske diameterregulering med de to 5 reguleringsstørrelser - anodestrøm (= varmestrøm) eller varmekredsspænding og generatorfrekvens - ikke kan udreguleres for afvigelser fra den ønskede diameter af størrelsesordenen ca. 5 %, hvilket ikke kan tilfredsstille kravene ved den tendens, der findes til fremstil-10 ling af halvlederstave med større diameter på op til 100 mm og mere.However, it has been found that with the previously used electrical diameter control with the two control sizes - anode current (= heat current) or heating circuit voltage and generator frequency - it is not possible to adjust for deviations from the desired diameter of the order of approx. 5%, which cannot satisfy the requirements of the tendency for the production of larger diameter semiconductor rods up to 100 mm or more.
Disse afvigelser hidrører f.eks. fra, at det smeltede volumen af den induktivt med varmestrømkredsen koblede smeltezone af halvlederstaven inden for visse 15 grænser kan antage forskellige former og størrelser i afhængighed af trækningsprocessens forløb.These discrepancies arise, for example. from the fact that the molten volume of the inductively coupled melting zone of the semiconductor rod within certain limits may take different shapes and sizes depending on the course of the drawing process.
Ved varierende form af smeltezonen fås forskellige koblingsmodstande, og forløbet af den komplekse modstand af varmestrømkredsen ændrer sig med frekvensen.With varying form of the melting zone, different coupling resistors are obtained and the course of the complex resistance of the heating current circuit changes with frequency.
20 Herved fås der imidlertid også forskelige resonanskurver, dvs. at resonansfrekvens, resonansmaksimum og hermed godhed og halwærdibredde af varmekredsen varierer med smeltezonens form. Alligevel kan kurverne skæres i trækningsprocessens arbejdspunkt.20 However, this also provides different resonance curves, viz. that resonant frequency, resonant maximum, and thus goodness and half-width width of the heating circuit vary with the shape of the melting zone. Still, the curves can be cut at the working point of the drawing process.
25 Dette resulterer i, at stavdiameteren ved regule ring med to reguleringsstørrelser kan varierer i et vist område, f.eks. på grund af forskellige trækningsprocesforløb, uden at variationerne kan udreguleres ved denne fremgangsmåde.This results in the rod diameter being controlled by two regulation sizes in a given range, e.g. due to different drawing processes, without the variations being regulated by this method.
30 Opfindelsen går ud på at udelukke diameterafvi geiserne ved den tidligere kendte elektriske diameterregulering med to reguleringsstørrelser.The invention is to exclude the diameter deviations from the prior art electrical diameter control with two control sizes.
Dette opnås ifølge opfindelsen ved, at der som tredje reguleringsstørrelse anvendes den ved hjælp af 35 spændingen på varmestrømkredsen vurderede godhed af denne kreds, og ved, at i det mindste en af de to reguleringer styres skiftevis af i det mindste to reguleringsstørrelser .This is achieved according to the invention in that, as the third control size, the goodness of this circuit is assessed by the voltage on the heating current circuit, and in that at least one of the two controls is alternately controlled by at least two control sizes.
3 1420623 142062
Ved en grundregulering af diameteren ved hjælp af generatorfrekvensen og stræknings-opstemningsmekanismen tjener herved den ene af de tre reguleringsstørrelser, nemlig generatorfrekvens, anodestrøm eller varmestrøm-5 kredsspænding - efter sammenligning med de ønskede værdier - til regulering af stræknings-opstemnings-mekanismen eller generatorfrekvensen, medens de to andre reguleringsstørrelser skiftevis indkobles til regulering af henholdsvis generatorfrekvensen eller 10 stræknings-opstemningsmekanismen.By basic control of the diameter by means of the generator frequency and the stretch tuning mechanism, one of the three control sizes, namely generator frequency, anode current or heat flow circuit voltage - after comparison with the desired values - serves to control the stretch tuning mechanism or generator, while the other two control sizes are switched on alternately to control the generator frequency or the stretch tuning mechanism, respectively.
Stræknings-opstemningsmekanismen udgør det ene reguleringsobjekt og HF-generatorens frekvensindstillingsorgan det andet. Ved begrebet "stræknings-opstemningsmekanisme" skal forstås de i forhold til 15 hinanden aksialt forskydelige, holdere for halvlederstavens to ender, samt de drivmidler, der bevirker en forskydning på veldefineret måde, fi.eke. indstillings-motor og et mekanisk drev, der overfører bevægelsen.The stretch tuning mechanism constitutes one control object and the frequency generator of the HF generator the other. By the term "stretch-tuning mechanism" is meant the axially displaceable relative to each other, the holders for the two ends of the semiconductor rod, and the propellants which effect a displacement in a well-defined manner. adjusting motor and a mechanical drive that transmits the movement.
Ved hjælp af den information, der tilføres en til 20 stræknings-opstemningsmekanismen knyttet reguleringskreds, bliver smeltezonen enten trykket noget sammen, dvs. opstemmet, eller trukket ud, dvs. strakt, hvorved der sker en ændring af det udkrystalliserede halvledermateriales diameter.By means of the information supplied to a control circuit associated with the stretching tuning mechanism, the melting zone is either compressed somewhat, ie. elated, or pulled out, viz. stretched, thereby changing the diameter of the crystallized semiconductor material.
25 Med opfindelsen opnås den fordel, at halvleder staven kan trækkes med mere konstant diameter end ved trækningen med to reguleringsstørrelser.With the invention, the advantage is obtained that the semiconductor rod can be drawn with a more constant diameter than with the draw with two control sizes.
Til bedre indbyrdes udligning, dvs. til opnåelse af en særlig ensartethed for alle zonesmeltningsproces-30 ser kan de tre reguleringsstørrelser ifølge opfindelsen tilføres begge reguleringerne i cyklisk ombytning.For better equalization, ie to achieve a particular uniformity for all zone melting processes, the three control sizes of the invention can be applied to both controls in cyclic exchange.
Ifølge opfindelsen kan en ændring af tilførlngen af reguleringsstørrelserne til reguleringerne hensigtsmæssigt først ske, når er-værdien for en regulerings-35 størrelse er blevet lig med dennes bør-værdi. Det kan imidlertid være enklere, hvis ifølge opfindelsen reguleringen for den aksiale afstand mellem de to fast® dele af halvlederstaven, der bærer smeltezone, får fast 142062 4 tilført kun den ene af de tre reguleringsstørrelser.According to the invention, a change in the addition of the control sizes to the adjustments can conveniently only take place when the value of a control size has become equal to its set value. However, it may be simpler if, according to the invention, the control for the axial distance between the two solid® portions of the semiconductor rod carrying the melting zone is fixed to only one of the three control sizes.
Opfindelsen angår også et apparat til udøvelse af fremgangsmåden ifølge opfindelsen, indeholdende et første reguleringsobjekt, der bestemmer afstanden mellem 5 de to faste stavdele, som bærer smeltezonen, et andet reguleringsobjekt, som bestemmer energitilførslen til smeltezonen via frekvensen af den fra en HF-generator afgivne strøm, en delreguleringskreds med en er-værdi-måler for generatorfrekvensen, en bør-værdigiver og en 10 komparator og en anden delreguleringskreds med en anden er-værdimåler for generatorens anodestrøm, en anden bør-værdigiver og en anden komparator, hvilket apparat er ejendommeligt ved en tredje delreguleringskreds med en tredje er-værdimåler for spændingen på varmestrøm -15 kredsen, en tredje bør-værdigiver og en tredje komparator, samt en omskifter til at knytte hver af de to reguleringsobjekter til en af delreguleringskredsene, hvilkén omskifter er således udformet, at der ved hver betjening af omskifteren sker en omkobling af i det 20 mindste det ene af de to reguleringsobjekter til en af de andre delreguleringskredse.The invention also relates to an apparatus for carrying out the method according to the invention, comprising a first regulating object which determines the distance between the two solid rod parts carrying the melting zone, a second regulating object which determines the energy supply to the melting zone via the frequency of an HF generator delivered current, a sub-control circuit with an generator value is meter, a setpoint and a comparator, and a second sub-circuit with a different generator anode current meter, a second setpoint and a different comparator, which apparatus is peculiar by a third part control circuit having a third value meter for the voltage of the heat stream -15 circuit, a third setpoint sensor and a third comparator, and a switch for connecting each of the two control objects to one of the part control circuits, which switch is thus designed, that at each operation of the switch there is a switching of at least one of them two control objects for one of the other sub-regulation circuits.
Opfindelsen forklares i det følgende nærmere under henvisning til den skematiske tegning, der viser et apparat til udøvelse af fremgangsmåden ifølge opfin-25 delsen.The invention will be explained in more detail below with reference to the schematic drawing showing an apparatus for carrying out the method according to the invention.
X det viste apparat findes en varmespole 2, som tilvejebringer smeltezonen i en halvlederstav 1, og som f.eks. over en spole 5 er forbundet med en højfrekvensgenerator 4 til en varmestrømkreds.In the apparatus shown, a heating coil 2 is provided which provides the melting zone in a semiconductor rod 1 and which e.g. over a coil 5 is connected to a high frequency generator 4 for a heat current circuit.
30 Varmestrømkredsens spænding, generatorens fre kvens og anodestrømmen måles ved hjælp af instrumenter 6, 7 og 8 og tilføres sammenligningstrin 9, 10 og 11 til sammenligning af er-værdien og bør-værdien. Reguleringsafvigelserne tilføres indstillingsmotorerne 35 for en stræknings-opstemningsmekanisme 13 og en frekvensreguleringsindretning for højfrekvensgeneratoren 4, efter at de i en kobling 12 er udvalgt i overensstemmelse med et forelagt program. Ifølge opfin30 The voltage of the heating circuit, the frequency of the generator and the anode current are measured by instruments 6, 7 and 8 and supplied to comparative steps 9, 10 and 11 for comparison of the is-value and the set-value. The control deviations are applied to the setting motors 35 for a stretch tuning mechanism 13 and a frequency control device for the high frequency generator 4 after they have been selected in a coupling 12 according to a presented program. According to the invention
Claims (2)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2220519 | 1972-04-26 | ||
| DE2220519A DE2220519C3 (en) | 1972-04-26 | 1972-04-26 | Process for crucible-free zone melting of semiconductor rods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK142062B true DK142062B (en) | 1980-08-18 |
| DK142062C DK142062C (en) | 1981-01-12 |
Family
ID=5843357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK212573A DK142062C (en) | 1972-04-26 | 1973-04-17 | METHOD AND APPARATUS FOR DIGEL-FREE ZONE MELTING OF SEMICONDUCTOR WAS USED BY A HEAT COIL |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3880599A (en) |
| JP (1) | JPS5910959B2 (en) |
| BE (1) | BE798760A (en) |
| DE (1) | DE2220519C3 (en) |
| DK (1) | DK142062C (en) |
| NL (1) | NL7216255A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4176002A (en) * | 1974-08-21 | 1979-11-27 | Agence Nationale De Valorisation De La Recherche (Anvar) | Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation |
| DK142586B (en) * | 1977-07-07 | 1980-11-24 | Topsil As | Apparatus for zone melting of a semiconductor rod. |
| JPS58831B2 (en) * | 1978-09-27 | 1983-01-08 | 東洋製罐株式会社 | High frequency induction heating circuit |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL252591A (en) * | 1959-08-17 | |||
| GB904100A (en) * | 1959-09-11 | 1962-08-22 | Siemens Ag | A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil |
| DE1209551B (en) * | 1961-12-07 | 1966-01-27 | Siemens Ag | Process for crucible-free zone melting of a rod-shaped semiconductor body with a control of its diameter or cross-sectional profile and device for carrying out this process |
| US3284172A (en) * | 1964-10-13 | 1966-11-08 | Monsanto Co | Apparatus and process for preparing semiconductor rods |
| US3321299A (en) * | 1964-10-13 | 1967-05-23 | Monsanto Co | Apparatus and process for preparing semiconductor rods |
| US3617392A (en) * | 1968-10-29 | 1971-11-02 | Semimetals Inc | Power control for crystal growing |
| DE1913881B2 (en) * | 1969-03-19 | 1970-10-22 | Siemens Ag | Device for crucible-free zone melting |
-
1972
- 1972-04-26 DE DE2220519A patent/DE2220519C3/en not_active Expired
- 1972-11-30 NL NL7216255A patent/NL7216255A/xx unknown
-
1973
- 1973-03-19 US US342457A patent/US3880599A/en not_active Expired - Lifetime
- 1973-03-26 JP JP48034435A patent/JPS5910959B2/en not_active Expired
- 1973-04-17 DK DK212573A patent/DK142062C/en not_active IP Right Cessation
- 1973-04-26 BE BE130450A patent/BE798760A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL7216255A (en) | 1973-10-30 |
| JPS5910959B2 (en) | 1984-03-12 |
| JPS4922384A (en) | 1974-02-27 |
| DK142062C (en) | 1981-01-12 |
| DE2220519A1 (en) | 1973-11-15 |
| DE2220519C3 (en) | 1982-03-11 |
| DE2220519B2 (en) | 1981-02-26 |
| US3880599A (en) | 1975-04-29 |
| BE798760A (en) | 1973-10-26 |
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| PBP | Patent lapsed |