DK142062C - METHOD AND APPARATUS FOR DIGEL-FREE ZONE MELTING OF SEMICONDUCTOR WAS USED BY A HEAT COIL - Google Patents

METHOD AND APPARATUS FOR DIGEL-FREE ZONE MELTING OF SEMICONDUCTOR WAS USED BY A HEAT COIL

Info

Publication number
DK142062C
DK142062C DK212573A DK212573A DK142062C DK 142062 C DK142062 C DK 142062C DK 212573 A DK212573 A DK 212573A DK 212573 A DK212573 A DK 212573A DK 142062 C DK142062 C DK 142062C
Authority
DK
Denmark
Prior art keywords
digel
semiconductor
free zone
zone melting
heat coil
Prior art date
Application number
DK212573A
Other languages
Danish (da)
Other versions
DK142062B (en
Inventor
W Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK142062B publication Critical patent/DK142062B/en
Application granted granted Critical
Publication of DK142062C publication Critical patent/DK142062C/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK212573A 1972-04-26 1973-04-17 METHOD AND APPARATUS FOR DIGEL-FREE ZONE MELTING OF SEMICONDUCTOR WAS USED BY A HEAT COIL DK142062C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2220519A DE2220519C3 (en) 1972-04-26 1972-04-26 Process for crucible-free zone melting of semiconductor rods
DE2220519 1972-04-26

Publications (2)

Publication Number Publication Date
DK142062B DK142062B (en) 1980-08-18
DK142062C true DK142062C (en) 1981-01-12

Family

ID=5843357

Family Applications (1)

Application Number Title Priority Date Filing Date
DK212573A DK142062C (en) 1972-04-26 1973-04-17 METHOD AND APPARATUS FOR DIGEL-FREE ZONE MELTING OF SEMICONDUCTOR WAS USED BY A HEAT COIL

Country Status (6)

Country Link
US (1) US3880599A (en)
JP (1) JPS5910959B2 (en)
BE (1) BE798760A (en)
DE (1) DE2220519C3 (en)
DK (1) DK142062C (en)
NL (1) NL7216255A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176002A (en) * 1974-08-21 1979-11-27 Agence Nationale De Valorisation De La Recherche (Anvar) Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation
DK142586B (en) * 1977-07-07 1980-11-24 Topsil As Apparatus for zone melting of a semiconductor rod.
JPS58831B2 (en) * 1978-09-27 1983-01-08 東洋製罐株式会社 High frequency induction heating circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252591A (en) * 1959-08-17
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
DE1209551B (en) * 1961-12-07 1966-01-27 Siemens Ag Process for crucible-free zone melting of a rod-shaped semiconductor body with a control of its diameter or cross-sectional profile and device for carrying out this process
US3284172A (en) * 1964-10-13 1966-11-08 Monsanto Co Apparatus and process for preparing semiconductor rods
US3321299A (en) * 1964-10-13 1967-05-23 Monsanto Co Apparatus and process for preparing semiconductor rods
US3617392A (en) * 1968-10-29 1971-11-02 Semimetals Inc Power control for crystal growing
DE1913881B2 (en) * 1969-03-19 1970-10-22 Siemens Ag Device for crucible-free zone melting

Also Published As

Publication number Publication date
NL7216255A (en) 1973-10-30
JPS4922384A (en) 1974-02-27
BE798760A (en) 1973-10-26
DE2220519A1 (en) 1973-11-15
US3880599A (en) 1975-04-29
JPS5910959B2 (en) 1984-03-12
DK142062B (en) 1980-08-18
DE2220519B2 (en) 1981-02-26
DE2220519C3 (en) 1982-03-11

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Legal Events

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PBP Patent lapsed