DK1258988T3 - Fremgangsmåde og system til afstemning på waferniveau af akustiske volumenbölgeresonatorer og -filtre - Google Patents

Fremgangsmåde og system til afstemning på waferniveau af akustiske volumenbölgeresonatorer og -filtre

Info

Publication number
DK1258988T3
DK1258988T3 DK02008094T DK02008094T DK1258988T3 DK 1258988 T3 DK1258988 T3 DK 1258988T3 DK 02008094 T DK02008094 T DK 02008094T DK 02008094 T DK02008094 T DK 02008094T DK 1258988 T3 DK1258988 T3 DK 1258988T3
Authority
DK
Denmark
Prior art keywords
wafer
filters
wave resonators
tuning method
acoustic volume
Prior art date
Application number
DK02008094T
Other languages
English (en)
Inventor
Pasi Tikka
Juha Ellae
Jyrki Kaitila
Original Assignee
Nokia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Corp filed Critical Nokia Corp
Application granted granted Critical
Publication of DK1258988T3 publication Critical patent/DK1258988T3/da

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/013—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DK02008094T 2001-04-27 2002-04-11 Fremgangsmåde og system til afstemning på waferniveau af akustiske volumenbölgeresonatorer og -filtre DK1258988T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/844,218 US6462460B1 (en) 2001-04-27 2001-04-27 Method and system for wafer-level tuning of bulk acoustic wave resonators and filters

Publications (1)

Publication Number Publication Date
DK1258988T3 true DK1258988T3 (da) 2008-03-17

Family

ID=25292149

Family Applications (1)

Application Number Title Priority Date Filing Date
DK02008094T DK1258988T3 (da) 2001-04-27 2002-04-11 Fremgangsmåde og system til afstemning på waferniveau af akustiske volumenbölgeresonatorer og -filtre

Country Status (4)

Country Link
US (1) US6462460B1 (da)
EP (1) EP1258988B1 (da)
JP (1) JP4267249B2 (da)
DK (1) DK1258988T3 (da)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020074897A1 (en) * 2000-12-15 2002-06-20 Qing Ma Micro-electromechanical structure resonator frequency adjustment using radient energy trimming and laser/focused ion beam assisted deposition
US6922118B2 (en) * 2002-11-01 2005-07-26 Hrl Laboratories, Llc Micro electrical mechanical system (MEMS) tuning using focused ion beams
US20040227578A1 (en) * 2003-05-14 2004-11-18 Miikka Hamalainen Acoustic resonance-based frequency synthesizer using at least one bulk acoustic wave (BAW) or thin film bulk acoustic wave (FBAR) device
US20070139140A1 (en) * 2005-12-20 2007-06-21 Rao Valluri R Frequency tuning of film bulk acoustic resonators (FBAR)
KR101106815B1 (ko) * 2006-07-28 2012-01-19 아바고 테크놀로지스 와이어리스 아이피 (싱가포르) 피티이 리미티드 웨이퍼 처리 표면 처리 장치, 웨이퍼 처리 표면 처리 방법 및 컴퓨터 판독가능한 저장 매체
KR20100068366A (ko) * 2007-07-11 2010-06-23 아바고 테크놀로지스 와이어리스 아이피 (싱가포르) 피티이 리미티드 금속 층 형성 방법, 어쿠스틱 미러 구조물 형성 방법 및 어쿠스틱 미러 구조물
JP4987684B2 (ja) * 2007-12-19 2012-07-25 シチズンホールディングス株式会社 ジャイロセンサ素子の製造方法
DE102008003820B4 (de) * 2008-01-10 2013-01-17 Epcos Ag Frontendschaltung
JP5339582B2 (ja) 2008-07-31 2013-11-13 太陽誘電株式会社 弾性波デバイス
US20100068831A1 (en) * 2008-09-12 2010-03-18 Skyworks Solutions, Inc. Method for wafer trimming for increased device yield
FR2947398B1 (fr) * 2009-06-30 2013-07-05 Commissariat Energie Atomique Dispositif resonant a ondes acoustiques guidees et procede de realisation du dispositif
US20110121916A1 (en) * 2009-11-24 2011-05-26 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Hybrid bulk acoustic wave resonator
US8479363B2 (en) * 2010-05-11 2013-07-09 Hao Zhang Methods for wafer level trimming of acoustically coupled resonator filter
CN102064369B (zh) * 2010-11-05 2013-07-17 张�浩 声耦合谐振滤波器晶圆级调整方法
FR2973608A1 (fr) * 2011-03-31 2012-10-05 St Microelectronics Sa Procede d'ajustement de la frequence de resonance d'un element vibrant micro-usine
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
US9054671B2 (en) 2011-11-09 2015-06-09 International Business Machines Corporation Tunable filter structures and design structures
US9824894B2 (en) 2014-04-09 2017-11-21 Tokyo Electron Limited Method for correcting wafer bow from overlay
DE102015215204A1 (de) * 2015-08-10 2017-02-16 Continental Automotive Gmbh Herstellungsverfahren zum Herstellen eines elektromechanischen Aktors und elektromechanischer Aktor.
JP2017046225A (ja) * 2015-08-27 2017-03-02 株式会社ディスコ Ｂａｗデバイス及びｂａｗデバイスの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4638536A (en) * 1986-01-17 1987-01-27 The United States Of America As Represented By The Secretary Of The Army Method of making a resonator having a desired frequency from a quartz crystal resonator plate
FR2699765B1 (fr) * 1992-12-22 1995-01-20 Cepe Procédé d'ajustage en fréquence d'un dispositif piézoélectrique et équipement pour la mise en Óoeuvre du procédé.
JPH08148968A (ja) * 1994-11-24 1996-06-07 Mitsubishi Electric Corp 薄膜圧電素子
US6051907A (en) * 1996-10-10 2000-04-18 Nokia Mobile Phones Limited Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS)
US6111341A (en) * 1997-02-26 2000-08-29 Toyo Communication Equipment Co., Ltd. Piezoelectric vibrator and method for manufacturing the same
KR20010073196A (ko) * 1997-04-24 2001-07-31 다니구찌 이찌로오, 기타오카 다카시 박막 압전 소자 및 박막 압전 소자의 제조 방법 및 회로소자
US6081171A (en) 1998-04-08 2000-06-27 Nokia Mobile Phones Limited Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response
US6307447B1 (en) * 1999-11-01 2001-10-23 Agere Systems Guardian Corp. Tuning mechanical resonators for electrical filter
US6456173B1 (en) * 2001-02-15 2002-09-24 Nokia Mobile Phones Ltd. Method and system for wafer-level tuning of bulk acoustic wave resonators and filters

Also Published As

Publication number Publication date
JP4267249B2 (ja) 2009-05-27
US20020158702A1 (en) 2002-10-31
EP1258988B1 (en) 2007-11-21
EP1258988A2 (en) 2002-11-20
US6462460B1 (en) 2002-10-08
JP2002344271A (ja) 2002-11-29
EP1258988A3 (en) 2004-02-04

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