DK124800B - Fremgangsmåde til fremstilling af dislokationsfrie, tykke enkrystalstave af silicium. - Google Patents

Fremgangsmåde til fremstilling af dislokationsfrie, tykke enkrystalstave af silicium.

Info

Publication number
DK124800B
DK124800B DK118971A DK118971A DK124800B DK 124800 B DK124800 B DK 124800B DK 118971 A DK118971 A DK 118971A DK 118971 A DK118971 A DK 118971A DK 124800 B DK124800 B DK 124800B
Authority
DK
Denmark
Prior art keywords
dislocation
silicon
free
production
thick single
Prior art date
Application number
DK118971A
Other languages
Danish (da)
English (en)
Inventor
W Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK124800B publication Critical patent/DK124800B/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DK118971A 1970-03-13 1971-03-12 Fremgangsmåde til fremstilling af dislokationsfrie, tykke enkrystalstave af silicium. DK124800B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702012086 DE2012086C3 (de) 1970-03-13 1970-03-13 Verfahren zum Herstellen von versetzungsfreien, dicken Siliciumeinkristall stäben

Publications (1)

Publication Number Publication Date
DK124800B true DK124800B (da) 1972-11-27

Family

ID=5765043

Family Applications (1)

Application Number Title Priority Date Filing Date
DK118971A DK124800B (da) 1970-03-13 1971-03-12 Fremgangsmåde til fremstilling af dislokationsfrie, tykke enkrystalstave af silicium.

Country Status (5)

Country Link
DE (1) DE2012086C3 (de)
DK (1) DK124800B (de)
FR (1) FR2084557A5 (de)
GB (1) GB1295409A (de)
NL (1) NL7103203A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11278980A (ja) * 1998-03-25 1999-10-12 Murata Mfg Co Ltd 単結晶育成方法

Also Published As

Publication number Publication date
DE2012086C3 (de) 1974-05-16
GB1295409A (de) 1972-11-08
DE2012086B2 (de) 1973-10-11
FR2084557A5 (de) 1971-12-17
NL7103203A (de) 1971-09-15
DE2012086A1 (de) 1971-09-30

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Legal Events

Date Code Title Description
PBP Patent lapsed