DK106688D0 - Kvantebroendlaser med ladningsbaerertaethedsforoegelse - Google Patents

Kvantebroendlaser med ladningsbaerertaethedsforoegelse

Info

Publication number
DK106688D0
DK106688D0 DK106688A DK106688A DK106688D0 DK 106688 D0 DK106688 D0 DK 106688D0 DK 106688 A DK106688 A DK 106688A DK 106688 A DK106688 A DK 106688A DK 106688 D0 DK106688 D0 DK 106688D0
Authority
DK
Denmark
Prior art keywords
charger
quantum fuel
fuel laser
laser
quantum
Prior art date
Application number
DK106688A
Other languages
English (en)
Other versions
DK106688A (da
Inventor
Joel N Schulman
Kavasseri V Vaidyanathan
Arthur L Smirl
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of DK106688D0 publication Critical patent/DK106688D0/da
Publication of DK106688A publication Critical patent/DK106688A/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
    • H01S5/3416—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers tunneling through barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DK106688A 1986-07-01 1988-02-29 Kvantebroendlaser med ladningsbaerertaethedsforoegelse DK106688A (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/880,853 US4760579A (en) 1986-07-01 1986-07-01 Quantum well laser with charge carrier density enhancement
PCT/US1987/001183 WO1988000404A1 (en) 1986-07-01 1987-05-21 Quantum well laser with charge carrier density enhancement

Publications (2)

Publication Number Publication Date
DK106688D0 true DK106688D0 (da) 1988-02-29
DK106688A DK106688A (da) 1988-02-29

Family

ID=25377266

Family Applications (1)

Application Number Title Priority Date Filing Date
DK106688A DK106688A (da) 1986-07-01 1988-02-29 Kvantebroendlaser med ladningsbaerertaethedsforoegelse

Country Status (6)

Country Link
US (1) US4760579A (da)
EP (1) EP0279815B1 (da)
JP (1) JPH01500787A (da)
DE (1) DE3780444T2 (da)
DK (1) DK106688A (da)
WO (1) WO1988000404A1 (da)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2572082B2 (ja) * 1987-10-28 1997-01-16 富士写真フイルム株式会社 光半導体デバイス
DE3840717A1 (de) * 1988-12-02 1990-06-07 Max Planck Gesellschaft Lichtemittierendes bauelement aus verbindungs-halbleiter
US4989213A (en) * 1989-10-30 1991-01-29 Polaroid Corporation Narrow divergence, single quantum well, separate confinement, algaas laser
US5079601A (en) * 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
US5061970A (en) * 1990-06-04 1991-10-29 Motorola, Inc. Energy band leveling modulation doped quantum well
GB2261112B (en) * 1991-10-30 1995-06-28 Hitachi Europ Ltd Charge carrier source
EP0575684A1 (en) * 1992-06-22 1993-12-29 International Business Machines Corporation Decoupled optic and electronic confinement laser diode
JPH0964452A (ja) * 1995-08-18 1997-03-07 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
US6466597B1 (en) * 1998-06-17 2002-10-15 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163238A (en) * 1978-06-09 1979-07-31 The United States Of America As Represented By The Secretary Of The Army Infrared semiconductor device with superlattice region
US4365260A (en) * 1978-10-13 1982-12-21 University Of Illinois Foundation Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material
US4439782A (en) * 1980-11-21 1984-03-27 University Of Illinois Foundation Semiconductor device with heterojunction of Alx Ga1-x As--AlAs--Ga
US4438446A (en) * 1981-05-29 1984-03-20 Bell Telephone Laboratories, Incorporated Double barrier double heterostructure laser
JPS59119783A (ja) * 1982-12-25 1984-07-11 Nippon Telegr & Teleph Corp <Ntt> 半導体発光装置
JPS60219766A (ja) * 1984-04-17 1985-11-02 Fujitsu Ltd 半導体装置
JPS6110293A (ja) * 1984-06-25 1986-01-17 Sharp Corp 光半導体装置
JPS6115385A (ja) * 1984-07-02 1986-01-23 Nec Corp 半導体レ−ザ
JPH0712102B2 (ja) * 1985-06-14 1995-02-08 株式会社日立製作所 半導体レ−ザ装置

Also Published As

Publication number Publication date
WO1988000404A1 (en) 1988-01-14
EP0279815B1 (en) 1992-07-15
DE3780444T2 (de) 1993-02-25
EP0279815A1 (en) 1988-08-31
JPH01500787A (ja) 1989-03-16
DK106688A (da) 1988-02-29
US4760579A (en) 1988-07-26
DE3780444D1 (de) 1992-08-20

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Legal Events

Date Code Title Description
AHB Application shelved due to non-payment