DK0997936T3 - Fremgangsmåde til at fremstille en gate-elektrode til IGBT - Google Patents

Fremgangsmåde til at fremstille en gate-elektrode til IGBT

Info

Publication number
DK0997936T3
DK0997936T3 DK99402651T DK99402651T DK0997936T3 DK 0997936 T3 DK0997936 T3 DK 0997936T3 DK 99402651 T DK99402651 T DK 99402651T DK 99402651 T DK99402651 T DK 99402651T DK 0997936 T3 DK0997936 T3 DK 0997936T3
Authority
DK
Denmark
Prior art keywords
layer
track
conducting
anodized
insulating layer
Prior art date
Application number
DK99402651T
Other languages
English (en)
Inventor
Nicolas Changey
Alain Petitbon
Sophie Crouzy
Eric Ranchy
Original Assignee
Alstom Holdings
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alstom Holdings filed Critical Alstom Holdings
Application granted granted Critical
Publication of DK0997936T3 publication Critical patent/DK0997936T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Die Bonding (AREA)
  • Weting (AREA)
DK99402651T 1998-10-30 1999-10-25 Fremgangsmåde til at fremstille en gate-elektrode til IGBT DK0997936T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9813691A FR2785448B1 (fr) 1998-10-30 1998-10-30 Procede de fabrication d'une electrode de commande de grille pour transistor igbt

Publications (1)

Publication Number Publication Date
DK0997936T3 true DK0997936T3 (da) 2004-08-02

Family

ID=9532221

Family Applications (1)

Application Number Title Priority Date Filing Date
DK99402651T DK0997936T3 (da) 1998-10-30 1999-10-25 Fremgangsmåde til at fremstille en gate-elektrode til IGBT

Country Status (9)

Country Link
US (1) US6274451B1 (da)
EP (1) EP0997936B1 (da)
JP (1) JP3704264B2 (da)
AT (1) ATE263432T1 (da)
CA (1) CA2287814C (da)
DE (1) DE69915971T2 (da)
DK (1) DK0997936T3 (da)
ES (1) ES2217708T3 (da)
FR (1) FR2785448B1 (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4491244B2 (ja) * 2004-01-07 2010-06-30 三菱電機株式会社 電力半導体装置
DE102004031878B3 (de) * 2004-07-01 2005-10-06 Epcos Ag Elektrisches Mehrschichtbauelement mit zuverlässigem Lötkontakt

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2335953A1 (fr) * 1975-12-19 1977-07-15 Thomson Csf Nouvelles diodes " mesa " et leur procede de fabrication
JPH0716009B2 (ja) * 1988-12-02 1995-02-22 株式会社日立製作所 横型絶縁ゲートバイポーラトランジスタ
US5319237A (en) * 1990-03-09 1994-06-07 Thomson Composants Microondes Power semiconductor component
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
GB9106108D0 (en) * 1991-03-22 1991-05-08 Philips Electronic Associated A lateral insulated gate field effect semiconductor device
US5451798A (en) * 1993-03-18 1995-09-19 Canon Kabushiki Kaisha Semiconductor device and its fabrication method
US5521406A (en) * 1994-08-31 1996-05-28 Texas Instruments Incorporated Integrated circuit with improved thermal impedance
JPH09232332A (ja) * 1996-02-27 1997-09-05 Fuji Electric Co Ltd 半導体装置
EP0925610A1 (de) * 1996-07-16 1999-06-30 Siemens Aktiengesellschaft Halbleiterbauelement mit einer steuerelektrode zur modulation der leitfähigkeit eines kanalbereichs unter verwendung einer feldplattenstruktur
JP3879150B2 (ja) 1996-08-12 2007-02-07 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
CA2287814A1 (fr) 2000-04-30
US6274451B1 (en) 2001-08-14
FR2785448A1 (fr) 2000-05-05
DE69915971T2 (de) 2005-03-31
EP0997936A1 (fr) 2000-05-03
FR2785448B1 (fr) 2001-01-26
JP2000138242A (ja) 2000-05-16
DE69915971D1 (de) 2004-05-06
ATE263432T1 (de) 2004-04-15
JP3704264B2 (ja) 2005-10-12
CA2287814C (fr) 2008-01-08
EP0997936B1 (fr) 2004-03-31
ES2217708T3 (es) 2004-11-01

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