DK0727726T3 - Integrerbart kredsløb til stabilisering af en transistors arbejdstrøm ved modkobling, specielt egnet til batteridrevne appa - Google Patents

Integrerbart kredsløb til stabilisering af en transistors arbejdstrøm ved modkobling, specielt egnet til batteridrevne appa

Info

Publication number
DK0727726T3
DK0727726T3 DK96101353T DK96101353T DK0727726T3 DK 0727726 T3 DK0727726 T3 DK 0727726T3 DK 96101353 T DK96101353 T DK 96101353T DK 96101353 T DK96101353 T DK 96101353T DK 0727726 T3 DK0727726 T3 DK 0727726T3
Authority
DK
Denmark
Prior art keywords
counterconnection
workflow
stabilizing
transistor
battery
Prior art date
Application number
DK96101353T
Other languages
English (en)
Inventor
Margarete Dipl-Phys Deckers
Lothar Dipl-Ing Musiol
Klaus-Juergen Dipl-Ing Schoepf
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7754174&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DK0727726(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of DK0727726T3 publication Critical patent/DK0727726T3/da

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
DK96101353T 1995-02-16 1996-01-31 Integrerbart kredsløb til stabilisering af en transistors arbejdstrøm ved modkobling, specielt egnet til batteridrevne appa DK0727726T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19505269A DE19505269C1 (de) 1995-02-16 1995-02-16 Integrierbare Schaltungsanordnung zur Arbeitsstromstabilisierung eines Transistors durch Gegenkopplung, insbesondere geeignet für batteriebetriebene Geräte

Publications (1)

Publication Number Publication Date
DK0727726T3 true DK0727726T3 (da) 2000-10-23

Family

ID=7754174

Family Applications (1)

Application Number Title Priority Date Filing Date
DK96101353T DK0727726T3 (da) 1995-02-16 1996-01-31 Integrerbart kredsløb til stabilisering af en transistors arbejdstrøm ved modkobling, specielt egnet til batteridrevne appa

Country Status (7)

Country Link
US (1) US5952864A (da)
EP (1) EP0727726B1 (da)
JP (1) JP2741590B2 (da)
KR (1) KR100393660B1 (da)
DE (2) DE19505269C1 (da)
DK (1) DK0727726T3 (da)
FI (1) FI960661A (da)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19844741C1 (de) * 1998-09-29 2000-06-08 Siemens Ag Schaltungsanordnung zur Arbeitspunktstabilisierung eines Transistors
US20080061374A1 (en) * 2006-09-07 2008-03-13 System General Corporation Semiconductor resistor and semiconductor process of making the same
JP2011239044A (ja) * 2010-05-07 2011-11-24 Mitsumi Electric Co Ltd 高周波信号増幅回路
EP4096095A1 (en) * 2016-04-14 2022-11-30 Nexperia B.V. Solid state relay

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702947A (en) * 1970-10-21 1972-11-14 Itt Monolithic darlington transistors with common collector and seperate subcollectors
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source
US3956661A (en) * 1973-11-20 1976-05-11 Tokyo Sanyo Electric Co., Ltd. D.C. power source with temperature compensation
US3978350A (en) * 1975-03-11 1976-08-31 Nasa Dual mode solid state power switch
JPS52113339U (da) * 1976-02-26 1977-08-29
US4030023A (en) * 1976-05-25 1977-06-14 Rockwell International Corporation Temperature compensated constant voltage apparatus
US4323792A (en) * 1978-06-28 1982-04-06 Bergmann Guenther Two terminal circuitry for voltage limitation
US4481430A (en) * 1982-08-02 1984-11-06 Fairchild Camera & Instrument Corp. Power supply threshold activation circuit
US4613768A (en) * 1984-11-13 1986-09-23 Gte Communication Systems Corp. Temperature dependent, voltage reference comparator/diode
JPS63265461A (ja) * 1986-12-15 1988-11-01 Fuji Electric Co Ltd 半導体装置
DE4112697C1 (da) * 1991-04-18 1992-10-15 Grundig E.M.V. Elektro-Mechanische Versuchsanstalt Max Grundig Hollaend. Stiftung & Co Kg, 8510 Fuerth, De
US5184036A (en) * 1991-08-09 1993-02-02 Delco Electronics Corporation Method of limiting output current from an interface drive circuit

Also Published As

Publication number Publication date
FI960661A0 (fi) 1996-02-14
EP0727726B1 (de) 2000-04-26
DE59605014D1 (de) 2000-05-31
JPH08256019A (ja) 1996-10-01
US5952864A (en) 1999-09-14
FI960661A (fi) 1996-08-17
JP2741590B2 (ja) 1998-04-22
KR960032715A (ko) 1996-09-17
DE19505269C1 (de) 1996-05-23
EP0727726A2 (de) 1996-08-21
EP0727726A3 (da) 1996-09-18
KR100393660B1 (ko) 2003-10-22

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