DK0538878T3 - Lysdetektor - Google Patents

Lysdetektor

Info

Publication number
DK0538878T3
DK0538878T3 DK92118177.2T DK92118177T DK0538878T3 DK 0538878 T3 DK0538878 T3 DK 0538878T3 DK 92118177 T DK92118177 T DK 92118177T DK 0538878 T3 DK0538878 T3 DK 0538878T3
Authority
DK
Denmark
Prior art keywords
light detector
detector
light
Prior art date
Application number
DK92118177.2T
Other languages
Danish (da)
English (en)
Inventor
Yasusi Fujimura
Ichiro Tonai
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17617539&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DK0538878(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of DK0538878T3 publication Critical patent/DK0538878T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DK92118177.2T 1991-10-25 1992-10-23 Lysdetektor DK0538878T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3279904A JP3047385B2 (ja) 1991-10-25 1991-10-25 受光素子

Publications (1)

Publication Number Publication Date
DK0538878T3 true DK0538878T3 (da) 1996-11-11

Family

ID=17617539

Family Applications (1)

Application Number Title Priority Date Filing Date
DK92118177.2T DK0538878T3 (da) 1991-10-25 1992-10-23 Lysdetektor

Country Status (8)

Country Link
US (1) US5420418A (de)
EP (1) EP0538878B1 (de)
JP (1) JP3047385B2 (de)
KR (1) KR950014288B1 (de)
CA (1) CA2081250C (de)
DE (1) DE69212108T2 (de)
DK (1) DK0538878T3 (de)
ES (1) ES2091381T3 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235396A (ja) * 1992-02-24 1993-09-10 Sumitomo Electric Ind Ltd 半導体受光装置
JPH09289333A (ja) * 1996-04-23 1997-11-04 Mitsubishi Electric Corp 半導体受光素子
JP3828982B2 (ja) * 1997-04-14 2006-10-04 三菱電機株式会社 半導体受光素子
US6043550A (en) * 1997-09-03 2000-03-28 Sumitomo Electric Industries, Ltd. Photodiode and photodiode module
JP3221402B2 (ja) * 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置
US7288825B2 (en) * 2002-12-18 2007-10-30 Noble Peak Vision Corp. Low-noise semiconductor photodetectors
US20220416098A1 (en) * 2019-10-15 2022-12-29 Nippon Telegraph And Telephone Corporation Light Receiving Element

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
JPH0799782B2 (ja) * 1985-06-18 1995-10-25 株式会社ニコン 半導体光検出装置
EP0216572B1 (de) * 1985-09-24 1995-04-05 Kabushiki Kaisha Toshiba Halbleiter-Photodetektor mit einem zweistufigen Verunreinigungsprofil
JPH04111479A (ja) * 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子
JPH05235396A (ja) * 1992-02-24 1993-09-10 Sumitomo Electric Ind Ltd 半導体受光装置

Also Published As

Publication number Publication date
CA2081250A1 (en) 1993-04-26
DE69212108D1 (de) 1996-08-14
DE69212108T2 (de) 1997-02-20
US5420418A (en) 1995-05-30
EP0538878A2 (de) 1993-04-28
EP0538878B1 (de) 1996-07-10
ES2091381T3 (es) 1996-11-01
JP3047385B2 (ja) 2000-05-29
CA2081250C (en) 2000-02-15
JPH05121777A (ja) 1993-05-18
EP0538878A3 (en) 1993-08-04
KR950014288B1 (ko) 1995-11-24

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