DE883477C - Process for the production of the selenium layer on the base plates of selenium rectifiers - Google Patents
Process for the production of the selenium layer on the base plates of selenium rectifiersInfo
- Publication number
- DE883477C DE883477C DES13993D DES0013993D DE883477C DE 883477 C DE883477 C DE 883477C DE S13993 D DES13993 D DE S13993D DE S0013993 D DES0013993 D DE S0013993D DE 883477 C DE883477 C DE 883477C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- rectifiers
- production
- light metal
- base plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 13
- 229910052711 selenium Inorganic materials 0.000 title claims description 13
- 239000011669 selenium Substances 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 5
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910052580 B4C Inorganic materials 0.000 claims 1
- 239000010953 base metal Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 150000001247 metal acetylides Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910005347 FeSi Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
Verfahren zur Herstellung der Selenschicht auf den Grundplatten von Selengleichrichtern Für Selengleichrichter hat man außer Eisen für die die Selenschicht tragenden Grundplatten auch Aluminium verwendet, das namentlich den Vorzug hat, den ganzen Gleichrichter wesentlich leichter zu gestalten. Das unmittelbare Aufbringen des Selens auf die Aluminiumoberfläche erforderte eine Aufrauhung der Grundplatte, um eine möglichst gute Verbindung der Seelenschicht zu erzielen. Trotzdem bestand der Nachteil, daß derartige Gleichrichter sehr starke Alterungserscheinungen aufwiesen. Es sind dann weiter Gleichrichter hergestellt worden, bei denen die Aluminiumgrund-Platte zunächst mit einer Graphitschicht bedeckt und darauf dann die Selenschicht aufgebracht wurde. Auch hierbei mußte von einer besonderen Aufrauhung der Aluminiumoberfläche Gebrauch gemacht werden.Process for the production of the selenium layer on the base plates of Selenium rectifiers For selenium rectifiers, apart from iron, the selenium layer is used load-bearing base plates also use aluminum, which has the particular advantage of make the whole rectifier much easier. The immediate application the selenium on the aluminum surface required a roughening of the base plate, in order to achieve the best possible connection between the soul layer. Still existed the disadvantage that such rectifiers showed very severe signs of aging. Rectifiers were then manufactured in which the aluminum base plate first covered with a graphite layer and then applied the selenium layer became. Here too, the aluminum surface had to be roughened Be made use of.
Gemäß der Erfindung ist es auf einem anderen Wege gelungen, gute Leichtmetallselengleichrichter zu erzielen, indem auf das Leichtmetallein Karbid oder ein Silicid aufgebracht wird. Insbesondere haben sich für diesen Zwecle Borkarbid (B4 C) und Eisensilicid (FeSi) mit etwa 30% Sil@i.ciumgehalt als geeignet erwiesen. Auch lassen sich Silic:iumkarbid und Gemische dieses Karbids vorteilhaft ver,N@enden. .Bedingung . für die geeigneten Karbide oder Silicide ist, daß sie einen guten elektrischen Leiter darstellen, gegen Feuchtigkeit unempfindlich sind, mit dem Selen keine Verbindung eingehen, von dem im Selen enthaltenen Halogen, z. B. Chlor, Jod oder Brom, nicht angegriffen und durch Sauerstoff nicht oxydiert werden. Diese Bedingungen müssen bis zu einer Temperatur von 30o° C erfüllt werden. Alle diesen. Forderungen entsprechenden Karbide oder Silicide sind für die Vorbehandlung der Aluminiumgrundplatte verwendbar.According to the invention, good light metal selenium rectifiers have been achieved in another way by applying a carbide or a silicide to the light metal. In particular, boron carbide (B4 C) and iron silicide (FeSi) with about 30% silicon content proved to be suitable. Silica carbide can also be used and mixtures of this carbide advantageously ver, N @ ends. .Condition . for the appropriate carbides or silicides is that they have good electrical properties They represent conductors, are insensitive to moisture, and have no connection with selenium enter, of the halogen contained in selenium, z. B. chlorine, iodine or bromine, not attacked and not oxidized by oxygen. These conditions must up to a temperature of 30o ° C. All of these. Requirements corresponding Carbides or silicides can be used for the pretreatment of the aluminum base plate.
Zur Herstellung der Gleich.richterplatten werden die Aluminiumscheiben zwecks Entfernung stärkerer Oxydschichten mit einer Drahtbürste kräftig abgebürstet; eine besondere Aufrauhung der Fläche ist nicht erforderlich. Darauf werden die Karbide oder Silici,äe in möglichst feiner Pulverform mit Alkohol auf die Scheiben aufgeschlämmt, Darauf werden die Scheiben auf etwa 500'° C bis zu ihrer vollkommenen Erweichung erhitzt und darauf das aufgebrachte Pulver in einer Planierpresse in die. Al'uminiumplatte eingedrückt. Hierauf können die Scheiben in üblicher Weise verarbeitet werden, um die Selenschicht darauf herzustellen. Der Überzug mit Karbiden oder Sili@ci@den der :angegebenen Art kann auch allgemein für Zwecke verwendet werden, bei denen Gegenstände aus Leichtmetall einen Schutzüberzug gegen Oxydation erhalten sollen.The aluminum disks are used to manufacture the rectifier plates vigorously brushed off with a wire brush to remove thicker oxide layers; a special roughening of the surface is not necessary. The carbides are on top of it or silicon in the finest possible powder form with alcohol slurried on the slices, The slices are then brought to about 500 ° C. until they have completely softened heated and then the applied powder in a leveling press into the. Aluminum plate depressed. The slices can then be processed in the usual way to produce the selenium layer on it. The coating with carbides or silicon of the: specified kind can also be used generally for purposes where Objects made of light metal should be given a protective coating against oxidation.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES13993D DE883477C (en) | 1943-06-17 | 1943-06-18 | Process for the production of the selenium layer on the base plates of selenium rectifiers |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0013993 | 1943-06-17 | ||
| DES13993D DE883477C (en) | 1943-06-17 | 1943-06-18 | Process for the production of the selenium layer on the base plates of selenium rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE883477C true DE883477C (en) | 1953-07-16 |
Family
ID=25994859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES13993D Expired DE883477C (en) | 1943-06-17 | 1943-06-18 | Process for the production of the selenium layer on the base plates of selenium rectifiers |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE883477C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1016843B (en) * | 1955-11-11 | 1957-10-03 | Licentia Gmbh | Process for the manufacture of dry rectifiers |
-
1943
- 1943-06-18 DE DES13993D patent/DE883477C/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1016843B (en) * | 1955-11-11 | 1957-10-03 | Licentia Gmbh | Process for the manufacture of dry rectifiers |
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