DE879419C - Electrically asymmetrical conductive system, especially dry plate rectifier - Google Patents

Electrically asymmetrical conductive system, especially dry plate rectifier

Info

Publication number
DE879419C
DE879419C DEA7900D DEA0007900D DE879419C DE 879419 C DE879419 C DE 879419C DE A7900 D DEA7900 D DE A7900D DE A0007900 D DEA0007900 D DE A0007900D DE 879419 C DE879419 C DE 879419C
Authority
DE
Germany
Prior art keywords
conductive system
dry plate
electrically
germanium
plate rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEA7900D
Other languages
German (de)
Inventor
Margot Dr Phil Herbeck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AEG AG
Original Assignee
AEG AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AEG AG filed Critical AEG AG
Priority to DEA7900D priority Critical patent/DE879419C/en
Application granted granted Critical
Publication of DE879419C publication Critical patent/DE879419C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation

Description

Elektrisch unsymmetrisch leitendes System, insbesondere Trockenplattengleichrichter Die Erfindung betrifft ein elektrisch unsymmetrisch leitendes System, und zwar insbesondere einen Trockengleichrichter -mit im wesentlichen aus Selen bestehendem Halbleiter, der in bekannter Weise auf einer metallenen Trägereleiktrode fest aufgebracht ist und welcher an der Berührungsstelle mit der Gegenelektrode eine Sperrschicht aufweist. Die gebräuchlichsten Elemente dieser Art besitzen eine Gegenelektrode aus einem leicht schmelzenden. Metall oder einer entsprechenden Metallegierung. Bei Trockengleichrichtern wird die Gegenelektrode gewöhnlich durch Aufspritzen nach dem Schoopschen Verfahren erzeugt, während bei Sperrschicht.photozel'len im allgemeinen eine hauchdünne Kadmiumschicht durch Aufdampfen aufgebracht wird. Bei den bekannten Systemen. unsymmetrischer Leitfähigkeit sind gewöhnlich besondere Maßnahmen erforderlich, um eine Sperrschicht hinreichender Sperrfähigkeit zur Ausbildung zu bringen. Diese Maßnäh.men bestehen vor allem in thermischen Behandlungsgängen. Hierdurch läßt sich zwar eine nicht unerhebliche Steigerung der Sperrfähigkeit erzielen, doch geht dieser Gewinn an Sperrfähigkeit mit einem beträchtlichen Verlust an Leitfähigkeit in der Durchgangsrichtung Hand: in Hand.Electrically asymmetrical conductive system, especially dry plate rectifier The invention relates in particular to an electrically asymmetrically conductive system a dry rectifier - with semiconductors consisting essentially of selenium, which is firmly applied in a known manner on a metal support electrode and which has a barrier layer at the point of contact with the counter electrode. The most common elements of this type have a counter electrode made of one easily melting. Metal or a corresponding metal alloy. With dry rectifiers The counter electrode is usually sprayed on using the Schoop method Generates, while in the case of Barrage photocellular oils, generally a wafer-thin layer of cadmium is applied by vapor deposition. With the known systems. asymmetrical conductivity Special measures are usually required to make a barrier more adequate Bring blocking ability to training. These measures consist mainly of thermal treatment courses. This allows a not inconsiderable Achieve increase in lockability, but this gain goes to lockability with a significant loss of conductivity in the hand through direction: in hand.

Nach der Erfindung lassen sich. diese Nachteile dadurch beheben, daß man als wirksame Gegenelektrode eine insbesondere durch Aufdampfen hergestellte Schicht aus Germanium- verwendet. Es hat sich nämlich :gezeigt, daß durch Anwendung dieses Metalls nicht nur eine wesentliche Erhöhung der Sperrwirkung ohne merklichen Zurückgang der Leitfähigkeit in der Durchlaßrichtung eintritt, und zwar ohne .daß es. eines gesonderten: Arbeitsganiges bedarf, sondern daß sich auch Überraschend gute Eigenschaften in bezug auf die Alterung des Systems ergeben: Mit Germanium als Gegenelektrode :hergestellte Trockengleichrichter mit im wesentlichen aus Selen bestehendem Halbleiter erreichen bereits nach sehr kurzer Zeit einen statiönäTen Zustand, welcher also einer weiteren-Alterung -praktisch nicht mehr unterworfen, ist. Ein besonderer Vorzug des Germaniums als Gegenelektrode ist seine überaus. große Widerstandsfähigkeit gegen atmosphärische Einfüsse aller Art, eine Eigenschaft, welche möglicherweise zur schnellten Einstellung eines -stationären Zustandes im Alterungsprozeß entscheidend beiträgt.According to the invention can. eliminate these disadvantages in that as an effective counter electrode one in particular by vapor deposition layer made of germanium- used. It has been shown: that by using this metal not only a substantial increase in the barrier effect occurs without a noticeable decrease in conductivity in the forward direction, and without .that it. a separate: work-related needs, but also that Surprisingly good properties with regard to the aging of the system result in: With Germanium as counter electrode: manufactured dry rectifiers with essentially Semiconductors consisting of selenium reach a static point after a very short time State, which is practically no longer subject to further aging, is. A particular advantage of germanium as a counter-electrode is its extremely. great resistance to atmospheric influences of all kinds, a property which possibly for the quick setting of a stationary state in The aging process makes a decisive contribution.

Es ist nicht unbedingt erforderlich, das Germanium in reiner Form als Ausgangsstoff für die Herstellung einer Gegenelektrode zu verwenden, man kann vielmehr auch das Germanium einem niedrigschmelzenden Metall, wie Zinn, oder Blei, zulegieren oder aber auf die im wesentlichen aus Germanium bestehende dünne ,Gegenelektrode eine metallene Schutzschicht aufspritzen. Die vorteilhaften Eigenschaften des Germaniums gelangen zur Wirkung ,bereits 'bei geringen anteiligen Mengen, und zwar genügt es für viele Zwecke, wenn es also nicht auf extremes Sperrvermögen bei hohen Spannungen ankommt, z % oder weniger einem leichtschmelzenden Metall zuzuführen.It is not absolutely necessary to have the germanium in its pure form to use as a starting material for the production of a counter electrode, one can rather, germanium is a low-melting metal such as tin or lead, to alloy or to the thin counter electrode consisting essentially of germanium spray on a metallic protective layer. The beneficial properties of germanium have an effect 'already' with small proportions, and it is sufficient for many purposes when it does not require extreme blocking capacity at high voltages matters to feed z% or less to a low-melting metal.

Claims (2)

PATENTANSPRÜCHE: z. Elektrisch unsymmetrisch leitendes System., insbesondere Trockenplattengleichrichter, mit im wesentlichen aus Selen bestehendem Halbleiter, .gekennzeichnet durch eine auf die freie Oberfläche des Halbleiters, insbesondere durch Aufdampfen im Vakuum aufgebrachte .Schicht aus dem Metall Germanium oder einer Germanium als Legierungsbestandteil enthaltenden niedrigschmelzenden Metallegierung. PATENT CLAIMS: e.g. Electrically asymmetrical conductive system., In particular Dry plate rectifier, with semiconductors consisting essentially of selenium, . characterized by an on the free surface of the semiconductor, in particular A layer of the metal germanium or a layer applied by vapor deposition in a vacuum Low-melting metal alloy containing germanium as an alloy component. 2. Elektrisch unsymmetrisch leitendes System nach Anspruch _, dadurch gekennzeichnet; daß .über der die Gegenelektrode bildenden Metallschicht eine insbesondere durch Aufspritzen aufgetragene metallene Schutzschicht vorgesehen ist.2. Electrically asymmetrically conductive system according to claim _, characterized; that .above the metal layer forming the counterelectrode a particular through Spray applied metallic protective layer is provided.
DEA7900D 1943-05-18 1943-05-19 Electrically asymmetrical conductive system, especially dry plate rectifier Expired DE879419C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEA7900D DE879419C (en) 1943-05-18 1943-05-19 Electrically asymmetrical conductive system, especially dry plate rectifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEA0007900 1943-05-18
DEA7900D DE879419C (en) 1943-05-18 1943-05-19 Electrically asymmetrical conductive system, especially dry plate rectifier

Publications (1)

Publication Number Publication Date
DE879419C true DE879419C (en) 1953-06-11

Family

ID=25963081

Family Applications (1)

Application Number Title Priority Date Filing Date
DEA7900D Expired DE879419C (en) 1943-05-18 1943-05-19 Electrically asymmetrical conductive system, especially dry plate rectifier

Country Status (1)

Country Link
DE (1) DE879419C (en)

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