DE69939093D1 - Einschaltrücksetzschaltung - Google Patents

Einschaltrücksetzschaltung

Info

Publication number
DE69939093D1
DE69939093D1 DE69939093T DE69939093T DE69939093D1 DE 69939093 D1 DE69939093 D1 DE 69939093D1 DE 69939093 T DE69939093 T DE 69939093T DE 69939093 T DE69939093 T DE 69939093T DE 69939093 D1 DE69939093 D1 DE 69939093D1
Authority
DE
Germany
Prior art keywords
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69939093T
Other languages
English (en)
Inventor
David P Morrill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE69939093D1 publication Critical patent/DE69939093D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
DE69939093T 1998-11-12 1999-10-21 Einschaltrücksetzschaltung Expired - Lifetime DE69939093D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/190,308 US6160429A (en) 1998-11-12 1998-11-12 Power-on reset circuit

Publications (1)

Publication Number Publication Date
DE69939093D1 true DE69939093D1 (de) 2008-08-28

Family

ID=22700806

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69939093T Expired - Lifetime DE69939093D1 (de) 1998-11-12 1999-10-21 Einschaltrücksetzschaltung

Country Status (4)

Country Link
US (1) US6160429A (de)
EP (1) EP1001536B1 (de)
KR (1) KR100639759B1 (de)
DE (1) DE69939093D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6943596B2 (en) * 2002-03-12 2005-09-13 Broadcom Corporation Power-on reset circuit for use in low power supply voltage applications
KR100487536B1 (ko) * 2002-08-20 2005-05-03 삼성전자주식회사 파워-온 리셋 회로
EP1501192B1 (de) 2003-07-21 2014-02-26 Broadcom Corporation Einschalt- Rücksetzschaltung für niedrige Versorgungsspannungen
US6998884B2 (en) * 2003-12-31 2006-02-14 Atmel Corporation Circuit for auto-clamping input pins to a definite voltage during power-up or reset
KR100583611B1 (ko) * 2005-01-25 2006-05-26 삼성전자주식회사 파워-온 리셋 회로 및 파워-온 리셋 방법
US8872554B2 (en) 2012-01-06 2014-10-28 Silicon Laboratories Inc. Externally configurable power-on-reset systems and methods for integrated circuits
KR102084547B1 (ko) 2013-01-18 2020-03-05 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템, 및 그것의 외부 전원 제어 방법
TWI632773B (zh) * 2017-09-25 2018-08-11 立錡科技股份有限公司 低耗電電源啟動重設電路與參考訊號電路
JP7251929B2 (ja) * 2018-06-21 2023-04-04 ラピスセミコンダクタ株式会社 半導体装置及びパワーオンリセット信号の生成方法
CN110971218B (zh) * 2019-12-18 2021-04-27 成都海光微电子技术有限公司 上电复位电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2020437B (en) * 1978-04-14 1982-08-04 Seiko Instr & Electronics Voltage detecting circuit
US4874965A (en) * 1987-11-30 1989-10-17 Sgs Microelettronica S.P.A. Circuital device for the power-on reset of digital integrated circuits in MOS technology
US5144159A (en) * 1990-11-26 1992-09-01 Delco Electronics Corporation Power-on-reset (POR) circuit having power supply rise time independence
JP2761687B2 (ja) * 1991-12-19 1998-06-04 三菱電機株式会社 電圧レベル検出回路
JP2748950B2 (ja) * 1991-12-25 1998-05-13 日本電気株式会社 パワーオンリセット回路
JP2806783B2 (ja) * 1994-02-28 1998-09-30 日本電気株式会社 パワーオンリセット回路
KR100263924B1 (ko) * 1997-09-02 2000-08-16 박태진 리셋 신호 발생 장치

Also Published As

Publication number Publication date
EP1001536A3 (de) 2003-07-16
KR100639759B1 (ko) 2006-10-27
US6160429A (en) 2000-12-12
EP1001536B1 (de) 2008-07-16
EP1001536A2 (de) 2000-05-17
KR20000035101A (ko) 2000-06-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition