DE69937090D1 - Halbleiterträger, seine Herstellung, Aufbau und dessen Herstellung - Google Patents

Halbleiterträger, seine Herstellung, Aufbau und dessen Herstellung

Info

Publication number
DE69937090D1
DE69937090D1 DE69937090T DE69937090T DE69937090D1 DE 69937090 D1 DE69937090 D1 DE 69937090D1 DE 69937090 T DE69937090 T DE 69937090T DE 69937090 T DE69937090 T DE 69937090T DE 69937090 D1 DE69937090 D1 DE 69937090D1
Authority
DE
Germany
Prior art keywords
manufacture
construction
semiconductor carrier
semiconductor
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69937090T
Other languages
English (en)
Other versions
DE69937090T2 (de
Inventor
Tsuneaki Ohashi
Tomoyuki Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE69937090D1 publication Critical patent/DE69937090D1/de
Application granted granted Critical
Publication of DE69937090T2 publication Critical patent/DE69937090T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • H01L21/4882Assembly of heatsink parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Micromachines (AREA)
DE69937090T 1998-07-28 1999-07-27 Halbleiterträger, seine Herstellung, Aufbau und dessen Herstellung Expired - Lifetime DE69937090T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP22661398 1998-07-28
JP22661398 1998-07-28
JP19766699 1999-07-12
JP11197666A JP2000106391A (ja) 1998-07-28 1999-07-12 半導体支持装置、その製造方法、接合体の製造方法および接合体

Publications (2)

Publication Number Publication Date
DE69937090D1 true DE69937090D1 (de) 2007-10-25
DE69937090T2 DE69937090T2 (de) 2008-06-05

Family

ID=26510495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69937090T Expired - Lifetime DE69937090T2 (de) 1998-07-28 1999-07-27 Halbleiterträger, seine Herstellung, Aufbau und dessen Herstellung

Country Status (6)

Country Link
US (1) US6486542B1 (de)
EP (1) EP0977260B1 (de)
JP (1) JP2000106391A (de)
KR (1) KR100368627B1 (de)
DE (1) DE69937090T2 (de)
TW (1) TW440893B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004055608A (ja) * 2002-07-16 2004-02-19 Sumitomo Osaka Cement Co Ltd 電極内蔵型サセプタ
JP4569077B2 (ja) * 2003-06-05 2010-10-27 住友電気工業株式会社 半導体あるいは液晶製造装置用保持体およびそれを搭載した半導体あるいは液晶製造装置
JP4266886B2 (ja) 2004-06-21 2009-05-20 株式会社ソディック セラミック素子とその製造方法
KR100559783B1 (ko) * 2004-07-07 2006-03-10 한미반도체 주식회사 반도체 처리장치
JP4421595B2 (ja) * 2006-11-16 2010-02-24 日本碍子株式会社 加熱装置
KR100932233B1 (ko) * 2007-11-06 2009-12-16 주식회사 메카로닉스 히터 제조방법
TWI450353B (zh) * 2008-01-08 2014-08-21 Ngk Insulators Ltd A bonding structure and a semiconductor manufacturing apparatus
JP4209456B1 (ja) * 2008-02-22 2009-01-14 三菱重工業株式会社 積層接合装置用治具
US8932690B2 (en) * 2011-11-30 2015-01-13 Component Re-Engineering Company, Inc. Plate and shaft device
US9556074B2 (en) * 2011-11-30 2017-01-31 Component Re-Engineering Company, Inc. Method for manufacture of a multi-layer plate device
US9418959B1 (en) 2015-07-08 2016-08-16 Toyota Motor Engineering & Manufacturing North America, Inc. Systems of bonded substrates
US20210358775A1 (en) * 2018-09-28 2021-11-18 Kyocera Corporation Ceramic structure and wafer system
CN112267039B (zh) * 2020-10-10 2022-02-01 中国科学院金属研究所 一种高体积分数碳化硅颗粒增强铝基复合材料的制备工艺

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609471A (en) * 1969-07-22 1971-09-28 Gen Electric Semiconductor device with thermally conductive dielectric barrier
JPS59137379A (ja) * 1983-01-24 1984-08-07 工業技術院長 複合焼結セラミクスと金属との接着方法
JPS6254045A (ja) * 1985-09-02 1987-03-09 Toyota Motor Corp 炭化ケイ素及び窒化ケイ素短繊維強化アルミニウム合金
CA2010611A1 (en) * 1989-02-24 1990-08-24 Charles N. Wilson Method for orienting anisotropic superconducting crystals in a metal matrix composite
EP0506391B1 (de) * 1991-03-26 2002-02-27 Ngk Insulators, Ltd. Verwendung eines Korrosion beständiger Substratshalter aus Aluminiumnitrid
JP3813654B2 (ja) * 1995-02-09 2006-08-23 日本碍子株式会社 セラミックスの接合構造およびその製造方法
US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
JPH09213773A (ja) 1996-01-30 1997-08-15 Kyocera Corp ウェハ保持部材及び耐プラズマ用部材

Also Published As

Publication number Publication date
JP2000106391A (ja) 2000-04-11
KR20000011983A (ko) 2000-02-25
TW440893B (en) 2001-06-16
DE69937090T2 (de) 2008-06-05
US6486542B1 (en) 2002-11-26
EP0977260B1 (de) 2007-09-12
KR100368627B1 (ko) 2003-01-24
EP0977260A3 (de) 2002-04-10
EP0977260A2 (de) 2000-02-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition