DE69930286D1 - Bildgerät mit Time Delay Integration und Strahlungstrefferzahlen - Google Patents

Bildgerät mit Time Delay Integration und Strahlungstrefferzahlen

Info

Publication number
DE69930286D1
DE69930286D1 DE69930286T DE69930286T DE69930286D1 DE 69930286 D1 DE69930286 D1 DE 69930286D1 DE 69930286 T DE69930286 T DE 69930286T DE 69930286 T DE69930286 T DE 69930286T DE 69930286 D1 DE69930286 D1 DE 69930286D1
Authority
DE
Germany
Prior art keywords
charge
pixel circuit
pixel
collection means
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69930286T
Other languages
English (en)
Other versions
DE69930286T2 (de
Inventor
Evangelos Spartiotis
Stefan Jurthe
Tapio Eraluoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPL Intellectual Property Licensing Ltd
Original Assignee
Goldpower Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldpower Ltd filed Critical Goldpower Ltd
Publication of DE69930286D1 publication Critical patent/DE69930286D1/de
Application granted granted Critical
Publication of DE69930286T2 publication Critical patent/DE69930286T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/711—Time delay and integration [TDI] registers; TDI shift registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/768—Addressed sensors, e.g. MOS or CMOS sensors for time delay and integration [TDI]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Vehicle Body Suspensions (AREA)
  • Eye Examination Apparatus (AREA)
  • Fluid-Damping Devices (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69930286T 1998-11-05 1999-10-12 Bildgerät mit Time Delay Integration und Strahlungstrefferzahlen Expired - Lifetime DE69930286T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9824276 1998-11-05
GB9824276A GB2343577B (en) 1998-11-05 1998-11-05 Imaging device
PCT/EP1999/007783 WO2000028729A1 (en) 1998-11-05 1999-10-12 Imaging device

Publications (2)

Publication Number Publication Date
DE69930286D1 true DE69930286D1 (de) 2006-05-04
DE69930286T2 DE69930286T2 (de) 2006-11-30

Family

ID=10841910

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69930286T Expired - Lifetime DE69930286T2 (de) 1998-11-05 1999-10-12 Bildgerät mit Time Delay Integration und Strahlungstrefferzahlen

Country Status (8)

Country Link
EP (2) EP1127454B1 (de)
JP (1) JP4532743B2 (de)
AT (1) ATE320141T1 (de)
AU (1) AU1038900A (de)
DE (1) DE69930286T2 (de)
GB (1) GB2343577B (de)
IL (2) IL142766A0 (de)
WO (1) WO2000028729A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2289983B (en) 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
US9029793B2 (en) 1998-11-05 2015-05-12 Siemens Aktiengesellschaft Imaging device
GB0029430D0 (en) * 2000-12-04 2001-01-17 Univ Leicester Devices for imaging radionuclide emissions
WO2002063633A1 (en) * 2001-02-08 2002-08-15 Raytheon Company Bi-directional capable bucket brigade circuit
US6891146B2 (en) * 2002-07-30 2005-05-10 Hewlett-Packard Development Company, L.P. Photosensor assembly with shared charge transfer registers
GB0224689D0 (en) 2002-10-23 2002-12-04 Simage Oy Formation of contacts on semiconductor substrates
JP5001649B2 (ja) * 2003-07-12 2012-08-15 ラジエーション・ウォッチ・リミテッド 電離放射線監視用アセンブリ、電離放射線監視用アセンブリの操作方法及び電離放射線監視ネットワーク
RO121293B1 (ro) 2004-09-30 2007-02-28 Mb Telecom Ltd. - S.R.L. Metodă şi sistem de control neintruziv
FR2906081B1 (fr) * 2006-09-19 2008-11-28 E2V Semiconductors Soc Par Act Capteur d'image lineaire cmos a fonctionnement de type transfert de charges
WO2008108734A1 (en) * 2007-03-06 2008-09-12 Richard Brenner Detector for radiation therapy
GB0802478D0 (en) 2008-02-11 2008-03-19 Cmosis Nv Tiem delay integration in imaging device
FR2937159B1 (fr) * 2008-10-13 2011-02-25 Centre Nat Rech Scient Circuit integre comprenant une matrice de cellules electroniques et detecteur a pixels comportant un tel circuit
US8240611B2 (en) 2009-08-26 2012-08-14 Raytheon Company Retro-geo spinning satellite utilizing time delay integration (TDI) for geosynchronous surveillance
GB2475532A (en) * 2009-11-23 2011-05-25 St Microelectronics Array of daisy chained image sensors
PL2651119T3 (pl) * 2010-12-09 2017-06-30 Rigaku Corporation Detektor promieniowania
US8975570B2 (en) 2012-08-23 2015-03-10 Teledyne Dalsa Inc. CMOS time delay and integration image sensor
US9148601B2 (en) 2012-09-26 2015-09-29 Teledyne Dalsa, Inc. CMOS TDI image sensor with rolling shutter pixels
US9813601B2 (en) 2014-05-06 2017-11-07 Urugus S.A. Imaging device for scenes in apparent motion
US10347681B2 (en) * 2016-02-19 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US10313622B2 (en) * 2016-04-06 2019-06-04 Kla-Tencor Corporation Dual-column-parallel CCD sensor and inspection systems using a sensor
WO2024018860A1 (ja) * 2022-07-20 2024-01-25 浜松ホトニクス株式会社 放射線検出器、集積回路、及び放射線検出方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683193A (en) * 1970-10-26 1972-08-08 Rca Corp Bucket brigade scanning of sensor array
US3746883A (en) * 1971-10-04 1973-07-17 Rca Corp Charge transfer circuits
US5315114A (en) * 1981-12-18 1994-05-24 Texas Instruments Incorporated Integrated circuit detector array incorporating bucket brigade devices for time delay and integration
US4779005A (en) * 1987-05-11 1988-10-18 Irvine Sensors Corporation Multiple detector viewing of pixels using parallel time delay and integration circuitry
FR2656756B1 (fr) * 1989-12-29 1994-01-07 Commissariat A Energie Atomique Dispositif pour prises de vues a circuits de balayage integres.
FR2692423B1 (fr) * 1992-06-16 1995-12-01 Thomson Csf Camera d'observation multistandard et systeme de surveillance utilisant une telle camera.
GB2318411B (en) * 1996-10-15 1999-03-10 Simage Oy Imaging device for imaging radiation
US5898332A (en) * 1997-03-28 1999-04-27 Northern Telecom Limited Time delay charge integration circuit

Also Published As

Publication number Publication date
EP1667428A2 (de) 2006-06-07
WO2000028729A1 (en) 2000-05-18
GB9824276D0 (en) 1998-12-30
DE69930286T2 (de) 2006-11-30
EP1127454B1 (de) 2006-03-08
JP2002530016A (ja) 2002-09-10
EP1667428A3 (de) 2009-04-01
GB2343577B (en) 2001-01-24
IL142766A0 (en) 2002-03-10
EP1127454A1 (de) 2001-08-29
GB2343577A (en) 2000-05-10
ATE320141T1 (de) 2006-03-15
IL142766A (en) 2008-11-26
JP4532743B2 (ja) 2010-08-25
AU1038900A (en) 2000-05-29
EP1667428B1 (de) 2013-08-07

Similar Documents

Publication Publication Date Title
DE69930286D1 (de) Bildgerät mit Time Delay Integration und Strahlungstrefferzahlen
US8742310B2 (en) Imaging device with high dynamic range
EP0954167B1 (de) Verbesserungen in oder bezüglich Bildverarbeitungssystemen
JP2000504901A (ja) 電流リセットを有する電流媒介アクティブ画素画像感知装置
IL113921A (en) Imaging devices, systems and methods
US8355067B2 (en) Solid state imaging device and imaging apparatus
GB2339990A (en) CMOS image sensor having common outputting transistors
JP2000023044A (ja) 撮像装置
US20060290797A1 (en) Solid state imaging device
US20080017892A1 (en) CCD with improved substrate voltage setting circuit
US20120147235A1 (en) Image sensor with charge multiplication
US20050157194A1 (en) Imager device with dual storage nodes
US8493492B2 (en) Method of producing an image with pixel signals produced by an image sensor that includes multiple output channels
US20120147236A1 (en) Image sensor with charge multiplication
JP3251104B2 (ja) 固体撮像装置
US20120144656A1 (en) Method of producing an image sensor having multiple output channels
US8493491B2 (en) Methods for processing an image captured by an image sensor having multiple output channels
WO2001004968A3 (en) Cmos/ccd line transfer imager with low dark current
US8643758B2 (en) Method for processing an image captured by an image sensor having a charge multiplication output channel and a charge sensing output channel
JPH10500823A (ja) アクティブ画素を有するｃｍｏｓ撮像アレイ
CN210327777U (zh) 图像传感器和成像系统
ATE231313T1 (de) Synchron geschaltetes ccd-hochgeschwindigkeits- bildaufnahmesystem
JPS58127476A (ja) 固体撮像装置
EP2652941B1 (de) Bildsensor mit zur ladungsvervielfachung
CN100586158C (zh) Cmos图像传感器的光电信号处理电路及方法

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: IPL INTELLECTUAL PROPERTY LICENSING LTD., LIMA, CY