DE69925434D1 - Gasdichte Reaktionsgaseinlassvorrichtung eines Ofens zur Gasphaseninfiltration bzw. -Beschichtung - Google Patents

Gasdichte Reaktionsgaseinlassvorrichtung eines Ofens zur Gasphaseninfiltration bzw. -Beschichtung

Info

Publication number
DE69925434D1
DE69925434D1 DE69925434T DE69925434T DE69925434D1 DE 69925434 D1 DE69925434 D1 DE 69925434D1 DE 69925434 T DE69925434 T DE 69925434T DE 69925434 T DE69925434 T DE 69925434T DE 69925434 D1 DE69925434 D1 DE 69925434D1
Authority
DE
Germany
Prior art keywords
gas
furnace
coating
inlet device
phase infiltration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69925434T
Other languages
English (en)
Other versions
DE69925434T2 (de
Inventor
James W Rudolph
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Goodrich Corp
Original Assignee
Goodrich Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goodrich Corp filed Critical Goodrich Corp
Publication of DE69925434D1 publication Critical patent/DE69925434D1/de
Application granted granted Critical
Publication of DE69925434T2 publication Critical patent/DE69925434T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
DE69925434T 1998-10-28 1999-10-19 Gasdichte Reaktionsgaseinlassvorrichtung eines Ofens zur Gasphaseninfiltration bzw. -Beschichtung Expired - Lifetime DE69925434T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US178432 1998-10-28
US09/178,432 US6162298A (en) 1998-10-28 1998-10-28 Sealed reactant gas inlet for a CVI/CVD furnace

Publications (2)

Publication Number Publication Date
DE69925434D1 true DE69925434D1 (de) 2005-06-30
DE69925434T2 DE69925434T2 (de) 2006-02-02

Family

ID=22652535

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69925434T Expired - Lifetime DE69925434T2 (de) 1998-10-28 1999-10-19 Gasdichte Reaktionsgaseinlassvorrichtung eines Ofens zur Gasphaseninfiltration bzw. -Beschichtung

Country Status (3)

Country Link
US (1) US6162298A (de)
EP (1) EP0997553B1 (de)
DE (1) DE69925434T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352430B1 (en) 1998-10-23 2002-03-05 Goodrich Corporation Method and apparatus for cooling a CVI/CVD furnace
EP1063319B1 (de) * 1999-06-04 2005-12-07 Goodrich Corporation Verfahren und Vorrichtung zum Kühlen von einem CVI/CVD-Ofen
FR2818442B1 (fr) * 2000-12-20 2003-10-17 Energy Systems Internat Bv Dispositif photovoltaique formant vitrage
US6758909B2 (en) * 2001-06-05 2004-07-06 Honeywell International Inc. Gas port sealing for CVD/CVI furnace hearth plates
US7067214B2 (en) * 2003-10-27 2006-06-27 Utc Fuel Cells, Llc PEM fuel cell stack assembly with isolated internal coolant manifold
EP1700335A1 (de) * 2003-12-22 2006-09-13 Adaptive Plasma Technology Corporation Verfahren zum einrichten einer plasmakammer mit einer adaptiven plasmaquelle, plasmaätzverfahren damit und herstellungsverfahren für eine adaptive plasmaquelle
US7745764B2 (en) * 2005-12-07 2010-06-29 Ajax Tocco Magnethermic Corporation Method and apparatus for controlling furnace position in response to thermal expansion
US7811085B2 (en) * 2006-05-04 2010-10-12 Honeywell International Inc. Gas preheater for chemical vapor processing furnace
US7771194B2 (en) * 2006-05-26 2010-08-10 Honeywell International Inc. Gas preheater for chemical vapor processing furnace having circuitous passages
US20080232424A1 (en) * 2007-03-23 2008-09-25 Honeywell International Inc. Hearth plate including side walls defining a processing volume
JP5029382B2 (ja) * 2008-01-22 2012-09-19 東京エレクトロン株式会社 処理装置及び処理方法
US10655219B1 (en) * 2009-04-14 2020-05-19 Goodrich Corporation Containment structure for creating composite structures
US10689753B1 (en) * 2009-04-21 2020-06-23 Goodrich Corporation System having a cooling element for densifying a substrate
FI124673B (en) * 2012-12-19 2014-11-28 Outotec Oyj Method of sealing the grooves in a contact groove and sealing arrangement
FR3018526B1 (fr) * 2014-03-14 2021-06-11 Herakles Installation de densification cvi comprenant une zone de prechauffage a forte capacite

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DE2117933A1 (de) * 1971-04-14 1972-10-19 Siemens Ag Verfahren zum Herstellen von Hohlkörpern aus Halbleitermaterial von beliebiger Länge
US3995187A (en) * 1971-09-07 1976-11-30 Telic Corporation Electrode type glow discharge apparatus
US4031424A (en) * 1971-09-07 1977-06-21 Telic Corporation Electrode type glow discharge apparatus
US3884793A (en) * 1971-09-07 1975-05-20 Telic Corp Electrode type glow discharge apparatus
US4030996A (en) * 1971-09-07 1977-06-21 Telic Corporation Electrode type glow discharge method and apparatus
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
FR2490246A1 (fr) * 1980-09-17 1982-03-19 Cit Alcatel Dispositif de deposition chimique activee sous plasma
US5244500A (en) * 1983-10-05 1993-09-14 Toshiba Kikai Kabushiki Kaisha Process control system of semiconductor vapor phase growth apparatus
US4573431A (en) * 1983-11-16 1986-03-04 Btu Engineering Corporation Modular V-CVD diffusion furnace
US4606650A (en) * 1984-11-26 1986-08-19 Domtar Inc. Microwave, a closed vessel and methods of determining volatile material content
US5073241A (en) * 1986-01-31 1991-12-17 Kabushiki Kaisha Meidenshae Method for carbon film production
JPS6312128A (ja) * 1986-03-20 1988-01-19 Toshiba Mach Co Ltd バレル型気相成長装置
US4900525A (en) * 1986-08-25 1990-02-13 Gte Laboratories Incorporated Chemical vapor deposition reactor for producing metal carbide or nitride whiskers
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
JP2626925B2 (ja) * 1990-05-23 1997-07-02 三菱電機株式会社 基板処理装置および基板処理方法
CA2089149C (en) * 1990-08-10 2002-11-26 Eric R. Dickey Shielding for arc suppression in rotating magnetron sputtering systems
US5625170A (en) * 1994-01-18 1997-04-29 Nanometrics Incorporated Precision weighing to monitor the thickness and uniformity of deposited or etched thin film
US5480678A (en) * 1994-11-16 1996-01-02 The B. F. Goodrich Company Apparatus for use with CVI/CVD processes
CN1171137A (zh) * 1994-11-16 1998-01-21 B·F·谷德里奇公司 压力梯度化学蒸汽渗透和沉积的设备及工艺和制品
US6039812A (en) * 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
US5954881A (en) * 1997-01-28 1999-09-21 Northrop Grumman Corporation Ceiling arrangement for an epitaxial growth reactor
US6062851A (en) * 1998-10-23 2000-05-16 The B. F. Goodrich Company Combination CVI/CVD and heat treat susceptor lid

Also Published As

Publication number Publication date
EP0997553A1 (de) 2000-05-03
EP0997553B1 (de) 2005-05-25
US6162298A (en) 2000-12-19
DE69925434T2 (de) 2006-02-02

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