DE69916930D1 - Ionendosis-Messgerät für einen Ionenstrahl-Implantierungsgerät und Verfahren - Google Patents

Ionendosis-Messgerät für einen Ionenstrahl-Implantierungsgerät und Verfahren

Info

Publication number
DE69916930D1
DE69916930D1 DE69916930T DE69916930T DE69916930D1 DE 69916930 D1 DE69916930 D1 DE 69916930D1 DE 69916930 T DE69916930 T DE 69916930T DE 69916930 T DE69916930 T DE 69916930T DE 69916930 D1 DE69916930 D1 DE 69916930D1
Authority
DE
Germany
Prior art keywords
ion
dose measuring
beam implantation
measuring device
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69916930T
Other languages
English (en)
Other versions
DE69916930T2 (de
Inventor
Alfred Mike Halling
Wade Allen Krull
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Application granted granted Critical
Publication of DE69916930D1 publication Critical patent/DE69916930D1/de
Publication of DE69916930T2 publication Critical patent/DE69916930T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69916930T 1998-06-11 1999-06-03 Ionendosis-Messgerät für einen Ionenstrahl-Implantierungsgerät und Verfahren Expired - Fee Related DE69916930T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9586398P 1998-06-11 1998-06-11

Publications (2)

Publication Number Publication Date
DE69916930D1 true DE69916930D1 (de) 2004-06-09
DE69916930T2 DE69916930T2 (de) 2005-04-21

Family

ID=22253931

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69916930T Expired - Fee Related DE69916930T2 (de) 1998-06-11 1999-06-03 Ionendosis-Messgerät für einen Ionenstrahl-Implantierungsgerät und Verfahren

Country Status (4)

Country Link
KR (1) KR100407482B1 (de)
CN (1) CN1139108C (de)
DE (1) DE69916930T2 (de)
TW (1) TW423018B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US6664547B2 (en) * 2002-05-01 2003-12-16 Axcelis Technologies, Inc. Ion source providing ribbon beam with controllable density profile
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
CN100456427C (zh) * 2006-01-13 2009-01-28 北京中科信电子装备有限公司 控制离子注入的方法和装置
US7670964B2 (en) * 2007-03-22 2010-03-02 Tokyo Electron Limited Apparatus and methods of forming a gas cluster ion beam using a low-pressure source
US8071964B2 (en) * 2008-05-01 2011-12-06 Axcelis Technologies, Inc. System and method of performing uniform dose implantation under adverse conditions
US8008176B2 (en) * 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
CN102315069B (zh) * 2010-07-08 2013-06-19 中芯国际集成电路制造(上海)有限公司 离子注入机台的检测方法
JP6675789B2 (ja) * 2017-02-27 2020-04-01 住友重機械イオンテクノロジー株式会社 イオン注入装置
CN107993931B (zh) * 2017-11-30 2019-11-19 上海华力微电子有限公司 提高注入机生产效率的方法
US11187827B1 (en) * 2019-07-26 2021-11-30 Board Of Regents, The University Of Texas System Spinning aperture neutral drift sensor (SANDS)
CN112578426B (zh) * 2020-11-26 2022-09-20 中国工程物理研究院应用电子学研究所 一种可调节型阵列式法拉第筒

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770296B2 (ja) * 1989-05-15 1995-07-31 日新電機株式会社 イオン注入装置
US5319212A (en) * 1992-10-07 1994-06-07 Genus, Inc. Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
JPH0721969A (ja) * 1993-07-05 1995-01-24 Nec Yamagata Ltd イオン注入装置の注入量カウント装置
US5760409A (en) * 1996-06-14 1998-06-02 Eaton Corporation Dose control for use in an ion implanter

Also Published As

Publication number Publication date
KR100407482B1 (ko) 2003-12-18
KR20000005803A (ko) 2000-01-25
TW423018B (en) 2001-02-21
DE69916930T2 (de) 2005-04-21
CN1248061A (zh) 2000-03-22
CN1139108C (zh) 2004-02-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee