DE69911927D1 - Verfahren und vorrichtung zum messen der substrattemperatur - Google Patents

Verfahren und vorrichtung zum messen der substrattemperatur

Info

Publication number
DE69911927D1
DE69911927D1 DE69911927T DE69911927T DE69911927D1 DE 69911927 D1 DE69911927 D1 DE 69911927D1 DE 69911927 T DE69911927 T DE 69911927T DE 69911927 T DE69911927 T DE 69911927T DE 69911927 D1 DE69911927 D1 DE 69911927D1
Authority
DE
Germany
Prior art keywords
measuring
substrate temperature
substrate
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69911927T
Other languages
English (en)
Other versions
DE69911927T2 (de
Inventor
Mark Yam
M Hunter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69911927D1 publication Critical patent/DE69911927D1/de
Application granted granted Critical
Publication of DE69911927T2 publication Critical patent/DE69911927T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
DE69911927T 1998-02-20 1999-02-11 Verfahren und vorrichtung zum messen der substrattemperatur Expired - Fee Related DE69911927T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/026,855 US6007241A (en) 1998-02-20 1998-02-20 Apparatus and method for measuring substrate temperature
PCT/US1999/003026 WO1999042797A1 (en) 1998-02-20 1999-02-11 Method and apparatus for measuring substrate temperature
US26855 2001-12-20

Publications (2)

Publication Number Publication Date
DE69911927D1 true DE69911927D1 (de) 2003-11-13
DE69911927T2 DE69911927T2 (de) 2004-08-12

Family

ID=21834175

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69911927T Expired - Fee Related DE69911927T2 (de) 1998-02-20 1999-02-11 Verfahren und vorrichtung zum messen der substrattemperatur

Country Status (4)

Country Link
US (1) US6007241A (de)
EP (1) EP1060370B1 (de)
DE (1) DE69911927T2 (de)
WO (1) WO1999042797A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1073492A (ja) * 1996-08-30 1998-03-17 Sumitomo Sitix Corp 半導体基板の温度測定方法並びにその処理装置
JP2000266603A (ja) * 1999-03-19 2000-09-29 Tokyo Electron Ltd 放射温度測定方法及び放射温度測定装置
AU3455300A (en) * 1999-03-30 2000-10-16 Tokyo Electron Limited Temperature measuring system
US6313443B1 (en) * 1999-04-20 2001-11-06 Steag Cvd Systems, Ltd. Apparatus for processing material at controlled temperatures
DE10119047B4 (de) * 2000-04-21 2010-12-09 Tokyo Electron Ltd. Thermische Bearbeitungsvorrichtung und thermisches Bearbeitungsverfahren
US6816803B1 (en) 2000-06-02 2004-11-09 Exactus, Inc. Method of optical pyrometry that is independent of emissivity and radiation transmission losses
US6799137B2 (en) 2000-06-02 2004-09-28 Engelhard Corporation Wafer temperature measurement method for plasma environments
US6647350B1 (en) 2000-06-02 2003-11-11 Exactus, Inc. Radiometric temperature measurement system
JP4698807B2 (ja) * 2000-09-26 2011-06-08 東京エレクトロン株式会社 半導体基板熱処理装置
US20030036877A1 (en) * 2001-07-23 2003-02-20 Schietinger Charles W. In-situ wafer parameter measurement method employing a hot susceptor as a reflected light source
US20060190211A1 (en) * 2001-07-23 2006-08-24 Schietinger Charles W In-situ wafer parameter measurement method employing a hot susceptor as radiation source for reflectance measurement
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2004020337A (ja) * 2002-06-14 2004-01-22 Komatsu Ltd 温度測定装置
US6897131B2 (en) * 2002-09-20 2005-05-24 Applied Materials, Inc. Advances in spike anneal processes for ultra shallow junctions
US6839507B2 (en) * 2002-10-07 2005-01-04 Applied Materials, Inc. Black reflector plate
US7041931B2 (en) * 2002-10-24 2006-05-09 Applied Materials, Inc. Stepped reflector plate
US6835914B2 (en) 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
US7241345B2 (en) * 2003-06-16 2007-07-10 Applied Materials, Inc. Cylinder for thermal processing chamber
US7112763B2 (en) * 2004-10-26 2006-09-26 Applied Materials, Inc. Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers
KR100681693B1 (ko) * 2005-10-21 2007-02-09 재단법인 포항산업과학연구원 방사온도 계측기용 광학적 외란차단 시스템 및 방법
US20090012750A1 (en) * 2006-01-23 2009-01-08 Yutaka Kumano Chassis surface temperature estimate apparatus, method, program, and storage medium
US8222574B2 (en) * 2007-01-15 2012-07-17 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
US8254767B2 (en) 2008-08-29 2012-08-28 Applied Materials, Inc. Method and apparatus for extended temperature pyrometry
WO2018119573A1 (zh) * 2016-12-26 2018-07-05 沈阳泰合冶金测控技术有限公司 表面温度和发射率的测量装置和测量方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234230B2 (de) * 1971-12-27 1977-09-02
BE880666A (fr) * 1979-12-17 1980-04-16 Centre Rech Metallurgique Dispositif et procede pour mesurer l'emissivite d'un produit
US4611930A (en) * 1983-12-16 1986-09-16 Exxon Research And Engineering Co. Pyrometer measurements in the presence of intense ambient radiation
US4659234A (en) * 1984-06-18 1987-04-21 Aluminum Company Of America Emissivity error correcting method for radiation thermometer
US4708474A (en) * 1985-11-14 1987-11-24 United Technologies Corporation Reflection corrected radiosity optical pyrometer
US4881823A (en) * 1988-03-29 1989-11-21 Purdue Research Foundation Radiation thermometry
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
US5188458A (en) * 1988-04-27 1993-02-23 A G Processing Technologies, Inc. Pyrometer apparatus and method
KR960013995B1 (ko) * 1988-07-15 1996-10-11 도오교오 에레구토론 가부시끼가이샤 반도체 웨이퍼 기판의 표면온도 측정 방법 및 열처리 장치
US4956538A (en) * 1988-09-09 1990-09-11 Texas Instruments, Incorporated Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors
US5029117A (en) * 1989-04-24 1991-07-02 Tektronix, Inc. Method and apparatus for active pyrometry
US5011295A (en) * 1989-10-17 1991-04-30 Houston Advanced Research Center Method and apparatus to simultaneously measure emissivities and thermodynamic temperatures of remote objects
US5156461A (en) * 1991-05-17 1992-10-20 Texas Instruments Incorporated Multi-point pyrometry with real-time surface emissivity compensation
US5226732A (en) * 1992-04-17 1993-07-13 International Business Machines Corporation Emissivity independent temperature measurement systems
EP0612862A1 (de) * 1993-02-24 1994-08-31 Applied Materials, Inc. Messung der Temperatur von Wafern
US5660472A (en) * 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures

Also Published As

Publication number Publication date
EP1060370A1 (de) 2000-12-20
US6007241A (en) 1999-12-28
EP1060370B1 (de) 2003-10-08
DE69911927T2 (de) 2004-08-12
WO1999042797A1 (en) 1999-08-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee