DE69903200T2 - Vorrichtung mit einem spannungskompensierter QC Laser - Google Patents

Vorrichtung mit einem spannungskompensierter QC Laser

Info

Publication number
DE69903200T2
DE69903200T2 DE69903200T DE69903200T DE69903200T2 DE 69903200 T2 DE69903200 T2 DE 69903200T2 DE 69903200 T DE69903200 T DE 69903200T DE 69903200 T DE69903200 T DE 69903200T DE 69903200 T2 DE69903200 T2 DE 69903200T2
Authority
DE
Germany
Prior art keywords
compensated
laser
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69903200T
Other languages
English (en)
Other versions
DE69903200D1 (de
Inventor
Federico Capasso
Alfred Yi Cho
Sung-Nee George Chu
Jerome Faist
Albert Lee Hutchinson
Deborah Lee Sivco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE69903200D1 publication Critical patent/DE69903200D1/de
Publication of DE69903200T2 publication Critical patent/DE69903200T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69903200T 1998-01-23 1999-01-12 Vorrichtung mit einem spannungskompensierter QC Laser Expired - Lifetime DE69903200T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/012,300 US6023482A (en) 1998-01-23 1998-01-23 Article comprising a strain-compensated QC laser

Publications (2)

Publication Number Publication Date
DE69903200D1 DE69903200D1 (de) 2002-11-07
DE69903200T2 true DE69903200T2 (de) 2003-06-12

Family

ID=21754320

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69903200T Expired - Lifetime DE69903200T2 (de) 1998-01-23 1999-01-12 Vorrichtung mit einem spannungskompensierter QC Laser

Country Status (4)

Country Link
US (1) US6023482A (de)
EP (1) EP0932230B1 (de)
JP (1) JP3923205B2 (de)
DE (1) DE69903200T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6560259B1 (en) 2000-05-31 2003-05-06 Applied Optoelectronics, Inc. Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity
EP1195865A1 (de) * 2000-08-31 2002-04-10 Alpes Lasers SA Quantenkaskadierter Laser
EP1189317A1 (de) * 2000-09-13 2002-03-20 Alpes Lasers SA Quantenkaskadenlaser mit Anregung durch optische Phononen
US6765663B2 (en) 2002-03-14 2004-07-20 Raytheon Company Efficient multiple emitter boresight reference source
US20040109692A1 (en) * 2002-12-09 2004-06-10 James Plante FSO communication systems having high performance detectors
DE102004009531B4 (de) * 2004-02-20 2007-03-01 Forschungszentrum Rossendorf E.V. Quanten-Kaskaden-Laser-Struktur
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
WO2010059180A2 (en) * 2008-11-07 2010-05-27 President And Fellows Of Harvard College Methods and apparatus for single-mode selection in quantum cascade lasers
JP7407546B2 (ja) * 2019-09-24 2024-01-04 株式会社東芝 量子カスケードレーザ
JP2022035660A (ja) * 2020-08-21 2022-03-04 住友電気工業株式会社 量子カスケードレーザ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63182550A (ja) * 1987-01-23 1988-07-27 Fujitsu Ltd ガスセンサ
US5509025A (en) * 1994-04-04 1996-04-16 At&T Corp. Unipolar semiconductor laser
US5570386A (en) * 1994-04-04 1996-10-29 Lucent Technologies Inc. Semiconductor laser
US5457709A (en) * 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5541949A (en) * 1995-01-30 1996-07-30 Bell Communications Research, Inc. Strained algainas quantum-well diode lasers
US5588015A (en) * 1995-08-22 1996-12-24 University Of Houston Light emitting devices based on interband transitions in type-II quantum well heterostructures
US5799026A (en) * 1996-11-01 1998-08-25 The United States Of America As Represented By The Secretary Of The Navy Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency
US5745516A (en) * 1996-11-06 1998-04-28 Lucent Technologies Inc. Article comprising a unipolar superlattice laser

Also Published As

Publication number Publication date
EP0932230A2 (de) 1999-07-28
JPH11266062A (ja) 1999-09-28
EP0932230A3 (de) 1999-08-04
DE69903200D1 (de) 2002-11-07
JP3923205B2 (ja) 2007-05-30
EP0932230B1 (de) 2002-10-02
US6023482A (en) 2000-02-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition